5.0mm Infrared LED IR323/H0-A Datasheet - 5mm Package - 1.2V Forward Voltage - 940nm Wavelength - 150mW Power Dissipation - English Technical Document

1. Product Overview

The IR323/H0-A is a high-intensity infrared emitting diode housed in a 5.0mm blue plastic package. It is designed for applications requiring reliable infrared emission in the 940nm spectrum. The device is spectrally matched with common silicon phototransistors, photodiodes, and infrared receiver modules, making it a versatile component for various optoelectronic systems.

Key advantages include high reliability, excellent radiant intensity, and a low forward voltage, which contributes to energy-efficient operation. The product is compliant with major environmental regulations, including RoHS, EU REACH, and halogen-free standards, ensuring its suitability for modern electronic manufacturing.

2. Technical Specifications Deep Dive

2.1 Absolute Maximum Ratings

The device is designed to operate within strict limits to ensure longevity and reliability. The continuous forward current (IF) is rated at 100 mA. For pulsed operation, a peak forward current (IFP) of 1.0 A is permissible under specific conditions (pulse width ≤100μs, duty cycle ≤1%). The maximum reverse voltage (VR) is 5 V. The operating temperature range (Topr) spans from -40°C to +85°C, while storage can occur between -40°C and +100°C. The maximum power dissipation (Pd) at or below 25°C ambient temperature is 150 mW. The soldering temperature should not exceed 260°C for a duration of 5 seconds or less.

2.2 Electro-Optical Characteristics

All characteristics are specified at an ambient temperature (Ta) of 25°C. The radiant intensity (Ie) is a primary performance metric. At a forward current (IF) of 20mA, the typical radiant intensity is 3.5 mW/sr, with a minimum of 2.0 mW/sr. Under pulsed conditions (IF=100mA, pulse width ≤100μs, duty ≤1%), the typical intensity reaches 15 mW/sr. At the peak current of 1A under the same pulsed conditions, the typical intensity is 150 mW/sr.

The peak emission wavelength (λp) is typically 940nm, with a spectral bandwidth (Δλ) of 45nm. The forward voltage (VF) is low, typically 1.2V at 20mA, with a maximum of 1.5V. At 100mA (pulsed), VF is typically 1.3V (max 1.6V). At 1A (pulsed), VF rises to a typical 2.6V (max 4.0V). The reverse current (IR) is a maximum of 10 μA at VR=5V. The viewing angle (2θ1/2) is typically 60 degrees, defining the emission cone.

3. Binning System Explanation

The product is available in different performance grades, or bins, based on radiant intensity measured at IF=20mA. This allows designers to select a component that precisely matches their sensitivity requirements.

• Bin H: Radiant Intensity range from 2.0 mW/sr (Min) to 3.2 mW/sr (Max).
• Bin J: Radiant Intensity range from 2.8 mW/sr (Min) to 4.5 mW/sr (Max).
• Bin K: Radiant Intensity range from 4.0 mW/sr (Min) to 6.4 mW/sr (Max).

Measurement uncertainties are noted: ±0.1V for forward voltage, ±10% for luminous intensity, and ±1.0nm for dominant wavelength.

4. Performance Curve Analysis

4.1 Forward Current vs. Ambient Temperature

The derating curve shows how the maximum allowable forward current decreases as the ambient temperature increases above 25°C. This graph is critical for thermal management and ensuring the LED operates within its safe operating area (SOA) under all environmental conditions.

4.2 Spectral Distribution

The spectral output graph confirms the narrowband emission centered around 940nm. This wavelength is ideal for compatibility with silicon-based detectors, which have peak sensitivity in the near-infrared region, and is less visible to the human eye compared to shorter IR wavelengths.

3.3 Peak Emission Wavelength vs. Ambient Temperature

This curve illustrates the minor shift in the peak wavelength with changes in junction temperature. Understanding this shift is important for applications where precise spectral matching is required over a wide temperature range.

4.4 Forward Current vs. Forward Voltage

The IV characteristic curve is non-linear, typical for diodes. It shows the relationship between the applied forward voltage and the resulting current. The curve is essential for designing the driving circuitry, whether using constant current or resistor-limited voltage sources.

4.5 Radiant Intensity vs. Forward Current

This graph demonstrates the super-linear relationship between drive current and optical output. Radiant intensity increases significantly with current, especially in the pulsed high-current region, highlighting the device's capability for high-brightness pulsed applications.

4.6 Relative Radiant Intensity vs. Angular Displacement

The polar plot visualizes the viewing angle, showing how the emitted intensity decreases as the angle from the central axis (0°) increases. The typical 60-degree viewing angle (where intensity drops to half) is confirmed by this curve, which is vital for designing optical alignment and coverage.

5. Mechanical and Package Information

5.1 Package Dimension Drawing

The mechanical drawing specifies the physical dimensions of the LED. Key measurements include the overall diameter of 5.0mm, the lead spacing of 2.54mm (standard for through-hole components), and the distance from the base to various points on the lens. The drawing includes a top and side view with critical tolerances noted (typically ±0.25mm unless otherwise specified). The anode (positive) lead is typically identified as the longer lead.

6. Soldering and Assembly Guidelines

6.1 Lead Forming

Leads should be bent at a point at least 3mm from the base of the epoxy bulb. Forming must be done before soldering and at room temperature to avoid stressing the package or damaging the internal wire bonds. PCB holes must align precisely with the LED leads to prevent mounting stress.

6.2 Storage

LEDs should be stored at 30°C or less and 70% relative humidity or less. The recommended storage life after shipping is 3 months. For longer storage (up to one year), use a sealed container with a nitrogen atmosphere and desiccant. After opening the moisture-sensitive bag, components should be used within 24 hours.

6.3 Soldering Process

Soldering must be performed with the solder joint at least 3mm away from the epoxy bulb. Recommended conditions are:

• Hand Soldering: Iron tip temperature max 300°C (30W max), soldering time max 3 seconds.
• Wave/DIP Soldering: Preheat temperature max 100°C (60 sec max), solder bath temperature max 260°C for 5 seconds max.

A recommended soldering profile graph is provided, showing a gradual ramp-up, a defined time above liquidus, and a controlled cooldown. Avoid rapid thermal cycling. Dip or hand soldering should not be performed more than once. Protect the LED from mechanical shock while hot.

6.4 Cleaning

If cleaning is necessary, use isopropyl alcohol at room temperature for no more than one minute, followed by air drying. Ultrasonic cleaning is not recommended due to the risk of damaging the internal structure.

7. Packaging and Ordering Information

7.1 Label Specification

The label on the packaging contains key information: Customer's Product Number (CPN), Product Number (P/N), Packing Quantity (QTY), Luminous Intensity Rank (CAT), Dominant Wavelength Rank (HUE), Forward Voltage Rank (REF), Lot Number (LOT No), and a month code (X).

7.2 Packing Specification

The LEDs are packed in anti-static bags. The standard packing flow is: 200-500 pieces per bag, 5 bags per inner carton, and 10 inner cartons per master (outside) carton.

8. Application Suggestions

8.1 Typical Application Scenarios

• Free Air Transmission Systems: For short-range wireless data links, remote controls, or proximity sensors.
• Optoelectronic Switches & Object Detection: Used in conjunction with a photodetector to sense the presence, position, or movement of an object.
• Floppy Disk Drives: Historically used for sensing disk presence or track position.
• Smoke Detectors: Employed in obscuration-type detectors where smoke particles scatter or block an IR beam.
• General Infrared Systems: Any application requiring a dependable source of 940nm infrared light.

8.2 Design Considerations

• Drive Circuit: Use a constant current source or a series current-limiting resistor to set the desired forward current (IF). Consider the forward voltage (VF) drop when calculating power supply requirements.
• Thermal Management: Adhere to the derating curve. For continuous operation at high currents or elevated ambient temperatures, consider heat sinking or forced air cooling to keep the junction temperature within limits.
• Optical Design: The 60-degree viewing angle defines the beam spread. Use lenses or apertures if a different beam pattern is required. Ensure proper alignment with the receiving sensor.
• Electrical Protection: Incorporate protection against reverse voltage spikes and electrostatic discharge (ESD), as the maximum reverse voltage is only 5V.

9. Technical Comparison and Differentiation

The IR323/H0-A differentiates itself through its combination of a standard 5mm through-hole package, a precisely defined 940nm wavelength, and high radiant intensity. Compared to generic IR LEDs, it offers guaranteed performance bins, comprehensive environmental compliance (RoHS, REACH, Halogen-Free), and detailed, reliable datasheet specifications backed by typical performance curves. The low forward voltage is an advantage for battery-powered applications, reducing power consumption in the drive circuitry.

10. Frequently Asked Questions (FAQ)

Q: What is the difference between Bin H, J, and K?
A: The bins represent different guaranteed minimum and maximum radiant intensity levels at 20mA. Bin K offers the highest output, followed by J and then H. Select based on the required sensitivity of your receiver circuit.

Q: Can I drive this LED with a 5V supply directly?
A: No. The forward voltage is only about 1.2-1.5V at 20mA. Connecting it directly to 5V would cause excessive current, destroying the LED. You must use a series resistor to limit the current. For example, with a 5V supply and target IF=20mA, R = (5V - 1.2V) / 0.02A = 190 Ohms (use a standard 200 Ohm resistor).

Q: Why is the peak current (1A) so much higher than the continuous current (100mA)?
A: This is due to thermal limitations. At high continuous currents, heat builds up in the semiconductor junction. In pulsed mode (very short pulses with low duty cycle), the junction does not have time to overheat, allowing much higher instantaneous currents for brief periods.

Q: Is the blue package color significant?
A: The blue plastic is an epoxy resin that is transparent to the 940nm infrared light it emits. The color is for visual identification and has minimal filtering effect on the output wavelength.

11. Practical Use Case Example

Designing a Simple Object Detection Sensor: Pair the IR323/H0-A with a phototransistor. Place the LED and phototransistor facing each other across a path. When an object interrupts the infrared beam, the signal from the phototransistor drops. The 940nm wavelength is invisible, preventing interference from ambient visible light. The high radiant intensity ensures a strong signal for reliable detection over a distance of several centimeters to a meter, depending on alignment and optics. The low forward voltage allows the sensor to be powered from a 3.3V microcontroller board with a simple transistor switch and current-limiting resistor for the LED.

12. Principle of Operation

An Infrared Light Emitting Diode (IR LED) is a semiconductor p-n junction diode. When a forward voltage is applied, electrons from the n-region and holes from the p-region are injected into the junction region. When these charge carriers recombine, energy is released in the form of photons (light). The specific semiconductor material used (Gallium Aluminum Arsenide - GaAlAs) determines the energy bandgap, which in turn defines the wavelength of the emitted photons—in this case, approximately 940nm, which is in the near-infrared spectrum. The plastic package encapsulates and protects the semiconductor chip while acting as a primary lens to shape the emitted light beam.

13. Technology Trends

Infrared LED technology continues to evolve. General trends include increasing radiant intensity and power efficiency (more light output per watt of electrical input), enabling longer range or lower power consumption. There is also a drive towards miniaturization with surface-mount device (SMD) packages becoming more prevalent than through-hole types for automated assembly. Furthermore, integration is a key trend, with LEDs being combined with drivers, modulators, or even sensors into single modules for specific applications like gesture sensing or time-of-flight (ToF) distance measurement. The underlying materials science focuses on improving reliability, thermal performance, and wavelength stability.