5mm Silicon PIN Photodiode PD333-3C/H0/L811 Datasheet - 5mm Diameter - 35V Reverse Voltage - Water Clear Lens - English Technical Document

1. Product Overview

The PD333-3C/H0/L811 is a high-speed, high-sensitivity silicon PIN photodiode encapsulated in a standard 5mm diameter plastic package. The device utilizes a water-clear epoxy lens, making it sensitive to a broad spectrum of radiation, including both visible light and infrared wavelengths. Its primary design focus is on achieving fast response times and high photo sensitivity while maintaining a small junction capacitance, making it suitable for applications requiring precise and rapid light detection.

Key advantages of this component include its compliance with modern environmental and safety standards. It is a Pb-Free (Lead-Free) product, compliant with the EU REACH regulation, and adheres to halogen-free requirements, with Bromine (Br) and Chlorine (Cl) content each below 900 ppm and their sum below 1500 ppm. The product itself is designed to remain within RoHS compliant specifications.

2. Technical Specifications Deep Dive

2.1 Absolute Maximum Ratings

The device is designed to operate reliably within specified limits. Exceeding these ratings may cause permanent damage.

• Reverse Voltage (V_R): 35 V - The maximum reverse bias voltage that can be applied across the photodiode.
• Power Dissipation (P_d): 150 mW - The maximum power the device can dissipate.
• Operating Temperature (T_opr): -25°C to +85°C - The ambient temperature range for normal operation.
• Storage Temperature (T_stg): -40°C to +100°C - The temperature range for non-operational storage.
• Lead Soldering Temperature (T_sol): 260°C for a maximum of 5 seconds.

2.2 Electro-Optical Characteristics (Ta=25°C)

These parameters define the core performance of the photodiode under typical conditions.

• Spectral Bandwidth (λ_0.1): 400 nm to 1100 nm. The device responds to light from the violet/blue region well into the near-infrared.
• Peak Sensitivity Wavelength (λ_P): 940 nm (Typical). The photodiode is most sensitive in the near-infrared spectrum.
• Open-Circuit Voltage (V_OC): 0.38 V (Typical) under an irradiance of 1 mW/cm² at 470 nm.
• Short-Circuit Current (I_SC): 45 μA (Typical) under an irradiance of 1 mW/cm² at 470 nm.
• Reverse Light Current (I_L): This is the photocurrent generated when the diode is reverse-biased.
  • 46 μA (Typical) at 470 nm, V_R=5V, E_e=1 mW/cm².
  • 60 μA (Typical) at 940 nm (peak sensitivity), V_R=5V, E_e=1 mW/cm².
• Reverse Dark Current (I_D): 10 nA (Maximum) at V_R=10V in complete darkness. This is the leakage current and is a key parameter for low-light sensitivity.
• Reverse Breakdown Voltage (V_BR): 130 V (Typical), with a minimum of 35 V, measured at a reverse current of 100 μA in darkness.
• View Angle (2θ_1/2): 80° (Typical). This defines the angular range over which the photodiode maintains half of its on-axis sensitivity.

3. Performance Curve Analysis

The datasheet includes several characteristic curves essential for design engineers.

3.1 Power Dissipation vs. Ambient Temperature

A graph shows the derating of the maximum allowable power dissipation as the ambient temperature increases. The rated 150 mW is valid at 25°C, and it decreases linearly to 0 mW at 100°C. This curve is critical for ensuring the device does not overheat in the application environment.

3.2 Spectral Sensitivity

This curve illustrates the relative responsivity of the photodiode across its operational wavelength range (400-1100 nm), confirming the peak sensitivity around 940 nm and significant response in the visible spectrum due to the water-clear lens.

3.3 Reverse Light Current vs. Irradiance

This graph demonstrates the linear relationship between the generated photocurrent (I_L) and the incident light power density (E_e). It confirms the device's suitability for light measurement applications where linearity is important.

3.4 Dark Current vs. Ambient Temperature

The dark current (I_D) increases exponentially with temperature. This curve is vital for applications operating at elevated temperatures, as it defines the noise floor of the detector.

3.5 Relative Light Current vs. Angular Displacement

This polar plot visually represents the 80° view angle, showing how the detected signal strength falls off as the angle of incident light moves away from the central axis (0°).

4. Mechanical and Packaging Information

4.1 Package Dimensions

The photodiode comes in a standard 5mm radial leaded package. Key dimensions include a body diameter of 5.0mm, a typical epoxy dome height, and lead spacing. All unspecified tolerances are ±0.25mm. A detailed dimensional drawing is provided in the datasheet for PCB footprint design.

4.2 Polarity Identification

The cathode (K) is typically identified by a longer lead, a flat spot on the package rim, or other marking as per the package drawing. Correct polarity must be observed during circuit assembly for proper reverse-bias operation.

5. Soldering and Assembly Guidelines

Careful handling during soldering is crucial to prevent damage to the epoxy bulb and internal structure.

• General Rule: Maintain a minimum distance of 3mm from the solder joint to the epoxy bulb. Solder beyond the base of the tie bar is recommended.
• Hand Soldering: Use an iron with a tip temperature not exceeding 350°C (30W max). Limit soldering time to 3 seconds per lead.
• Wave/DIP Soldering: Preheat to a maximum of 100°C for up to 60 seconds. The solder bath temperature should not exceed 260°C, with a dwell time of 5 seconds maximum.
• Critical Instructions:
  • Avoid applying mechanical stress to the leads while the device is at high temperature.
  • Do not perform dip or hand soldering more than once.
  • Protect the epoxy bulb from shock or vibration until the device cools to room temperature.
  • Avoid rapid cooling from peak soldering temperature.
  • Always use the lowest possible soldering temperature that achieves a reliable joint.

6. Packaging and Ordering Information

6.1 Packing Specification

The devices are packed in anti-static bags for protection. The standard packing flow is:

1. 500 pieces per anti-static bag.
2. 5 bags (2500 pieces) per inner carton.
3. 10 inner cartons (25,000 pieces) per master outside carton.

6.2 Label Specification

The product label contains key information for traceability and identification, including Customer Part Number (CPN), Product Number (P/N), Packing Quantity (QTY), Lot Number, and date codes (month identifier).

7. Application Suggestions

7.1 Typical Application Scenarios

• High-Speed Photo Detection: Suitable for data communication links (e.g., IR remote controls, optical encoders, proximity sensors) where fast pulse detection is needed.
• Security Systems: Can be used in intrusion detection beams, smoke detectors, or ambient light sensing for automatic lighting control.
• Camera Systems: Applicable for light metering, automatic exposure control, or as an IR cut filter control sensor.

7.2 Design Considerations

• Biasing: For fastest response and linearity, operate the photodiode in reverse-bias (photoconductive) mode. A transimpedance amplifier (TIA) is commonly used to convert the photocurrent into a voltage.
• Bandwidth vs. Sensitivity: The junction capacitance (implied by fast response) and load resistor value will determine the circuit's bandwidth. A trade-off exists between bandwidth (lower R) and sensitivity/output voltage (higher R).
• Optical Design: The 80° view angle is relatively wide. For directional sensing, an aperture or lens tube may be necessary to restrict the field of view.
• Dark Current Compensation: In precision low-light applications, the dark current and its variation with temperature may need to be compensated for in the signal conditioning circuitry.

8. Technical Comparison and Differentiation

Compared to standard PN photodiodes, this PIN photodiode offers distinct advantages:

• Faster Response Time: The intrinsic (I) region in a PIN structure reduces junction capacitance, enabling higher switching speeds and bandwidth.
• Improved Linearity: The wide intrinsic region allows for better linearity of photocurrent with respect to incident light power over a broad range.
• Lower Dark Current (at comparable voltages): While dependent on the specific design, the structure can sometimes allow for lower leakage currents.
• Broad Spectrum Sensitivity: The water-clear lens, unlike tinted lenses, does not filter out visible light, making it a versatile choice for applications needing response from visible to near-IR.

9. Frequently Asked Questions (Based on Technical Parameters)

Q1: What is the difference between operating at 470nm vs. 940nm?
A: The photodiode is significantly more sensitive at its peak wavelength of 940nm (60 μA typical vs. 46 μA at 470nm under the same conditions). For maximum signal output, IR sources around 940nm are ideal. The response at 470nm allows the device to be used with blue/green visible light sources as well.

Q2: Can I use this photodiode without a reverse bias voltage?
A: Yes, it can be used in photovoltaic mode (zero bias), generating the open-circuit voltage (V_OC). However, for high-speed or most linear applications, reverse-biasing (photoconductive mode) is recommended as it reduces junction capacitance and improves response time.

Q3: How critical is the 3mm soldering distance rule?
A: Very critical. Excessive heat conducted up the lead can crack the epoxy seal or damage the semiconductor chip, leading to immediate failure or reduced long-term reliability.

Q4: What does the "View Angle" specification mean for my design?
A: It means the photodiode will detect light effectively within an 80° cone (40° off-axis in any direction). Light incident at angles greater than this will produce a significantly weaker signal. This is important for aligning the sensor with a light source or defining a detection zone.

10. Practical Use Case Example

Designing a Simple Proximity Sensor:
The PD333-3C/H0/L811 can be paired with an infrared LED (e.g., emitting at 940nm) to create a proximity or object detection sensor. The IR LED is driven with a pulsed current. The photodiode, placed adjacent to the LED but optically isolated, detects the IR light reflected from an object. The photodiode's output is connected to a TIA and then a comparator. When no object is present, the detected signal is low (ambient IR only). When an object comes close, the reflected pulse increases the signal above a set threshold, triggering the comparator. The fast response time of the PIN diode allows for rapid detection and can support modulated signals to reject ambient light interference.

11. Operating Principle Introduction

A PIN photodiode is a semiconductor device with a three-layer structure: P-type, Intrinsic (undoped), and N-type (P-I-N). When reverse-biased, the intrinsic region becomes fully depleted of charge carriers, creating a wide electric field region. Photons incident on the device with energy greater than the semiconductor's bandgap create electron-hole pairs. The strong electric field in the intrinsic region rapidly sweeps these carriers to their respective terminals, generating a photocurrent that is proportional to the incident light intensity. The wide intrinsic region is key: it reduces the junction capacitance (enabling high speed) and increases the volume where photons can be absorbed (improving sensitivity, especially for longer wavelengths like IR).

12. Industry Trends and Context

Silicon PIN photodiodes like the PD333-3C/H0/L811 remain fundamental components in optoelectronics. Current trends in the industry include:

• Miniaturization: While 5mm is a standard through-hole package, there is a strong drive towards surface-mount device (SMD) packages (e.g., 0805, 0603) for automated assembly and space-constrained designs.
• Integration: Increasing integration of the photodiode with on-chip amplification, filtering, and digital logic to create "smart optical sensors" that provide a processed digital output.
• Enhanced Performance: Ongoing development focuses on further reducing dark current, improving sensitivity (responsivity) at specific wavelengths, and expanding the spectral range into deeper infrared using materials like InGaAs.
• Application-Specific Optimization: Photodiodes are being tailored for emerging applications in consumer electronics (smartphone sensors, wearables), automotive (LiDAR, in-cabin sensing), and industrial automation (machine vision, spectroscopy).

Despite these trends, the classic through-hole PIN photodiode continues to be widely used in prototyping, educational kits, industrial controls, and applications where robustness and ease of hand-soldering are valued.

13. Disclaimer and Usage Notes

Critical legal and technical disclaimers accompany this product data:

1. The manufacturer reserves the right to adjust product materials.
2. The product meets published specifications for 12 months from the shipment date.
3. Graphs and typical values are for reference; they are not guaranteed minimum or maximum limits.
4. The manufacturer assumes no responsibility for damage resulting from operation outside the Absolute Maximum Ratings or misuse.
5. The datasheet content is copyrighted; reproduction requires prior consent.
6. Important Safety Notice: This product is not intended for use in military, aircraft, automotive, medical, life-sustaining, life-saving, or any other safety-critical application where failure could lead to human injury or death. For such applications, explicit authorization must be obtained.