HIR-S06-P120/L649-P03/TR Infrared LED Datasheet - 850nm - 3.45V - 1A - 890mW - SMD Package

1. Product Overview

The HIR-S06-P120/L649-P03/TR is a high-power infrared (IR) light-emitting diode (LED) designed for applications requiring strong, efficient infrared illumination. It is a surface-mount device (SMD) housed in a compact, flat-top package with a water-clear epoxy lens. The primary function of this component is to emit infrared light at a peak wavelength of 850 nanometers (nm), which is optimally matched to the spectral sensitivity of silicon-based photodetectors like photodiodes and phototransistors. Its core advantages include a high radiant output from a small form factor, compliance with environmental regulations (RoHS, REACH, Halogen-Free), and suitability for automated assembly processes.

1.1 Key Features and Applications

The device is characterized by its high efficiency and small package size. Key features include a peak wavelength (λp) of 850 nm, suitability for surface-mount technology (SMT) soldering, and compliance with Pb-free, EU REACH, and halogen-free standards (Br < 900ppm, Cl < 900ppm, Br+Cl < 1500ppm). It also offers an electrostatic discharge (ESD) withstand voltage of 2kV. The primary target markets and applications are systems requiring invisible illumination for imaging or sensing. The most common application is as an infrared light source for CCD cameras, where it provides the necessary illumination for night-vision or low-light imaging. It is also suitable for various other infrared-applied systems, such as security systems, machine vision, proximity sensors, and optical switches.

2. Technical Parameter Deep-Dive

This section provides a detailed, objective analysis of the device's electrical, optical, and thermal characteristics as defined in the datasheet.

2.1 Absolute Maximum Ratings

The Absolute Maximum Ratings define the stress limits beyond which permanent damage to the device may occur. These ratings should never be exceeded during operation. For the HIR-S06-P120/L649-P03/TR, the key limits are:

• Continuous Forward Current (IF): 1000 mA. This is the maximum DC current that can be continuously passed through the LED.
• Reverse Voltage (VR): 5 V. Applying a reverse voltage exceeding this value can cause junction breakdown.
• Operating Temperature (Topr): -40°C to +100°C. The ambient temperature range within which the device is designed to function.
• Storage Temperature (Tstg): -40°C to +100°C. The temperature range for non-operational storage.
• Junction Temperature (Tj): 115°C. The maximum allowable temperature at the semiconductor junction itself.
• Power Dissipation (Pd): 3 W at IF=700mA. This indicates the maximum power the package can dissipate as heat under a specific test condition. The datasheet explicitly recommends adding a heat sink to this device to effectively manage thermal load and prevent exceeding the junction temperature limit.

2.2 Electro-Optical Characteristics

These parameters, measured at a standard ambient temperature of 25°C, define the device's performance under normal operating conditions. The values are typically presented as Minimum, Typical, and Maximum.

• Total Radiated Power (Po): This is the total optical power emitted by the LED in all directions, measured in milliwatts (mW). The typical value increases with drive current: 340 mW at 350 mA, 650 mW at 700 mA, and 890 mW at 1 A. This demonstrates the high-power capability of the device.
• Radiant Intensity (Ie): Measured in mW/sr (milliwatts per steradian), this is the optical power emitted per unit solid angle. It is a measure of the brightness of the LED in a specific direction. Typical values are 115 mW/sr (350 mA), 220 mW/sr (700 mA), and 290 mW/sr (1 A).
• Peak Wavelength (λp): 850 nm (typical). This is the wavelength at which the optical output power is at its maximum. 850nm is a common wavelength for IR illumination as it is invisible to the human eye but well-detected by silicon sensors and many camera sensors.
• Spectral Bandwidth (Δλ): 25 nm (typical). This defines the range of wavelengths emitted, typically measured at half the maximum power (Full Width at Half Maximum - FWHM). A 25nm bandwidth indicates a relatively narrow spectral output centered around 850nm.
• Forward Voltage (VF): The voltage drop across the LED when current is flowing. It increases with current: 3.10 V (350 mA), 3.25 V (700 mA), 3.45 V (1 A). This is critical for driver circuit design.
• Reverse Current (IR): Maximum 10 μA at VR=5V. This is the small leakage current that flows when the device is reverse-biased within its maximum rating.
• View Angle (2θ1/2): 120 degrees (typical). This is the full angle where the radiant intensity drops to half of its maximum value (on-axis). A 120-degree angle indicates a very wide beam pattern, suitable for broad-area illumination.

3. Performance Curve Analysis

The datasheet references typical performance curves which are essential for understanding device behavior under non-standard conditions.

3.1 Forward Current vs. Forward Voltage (IV Curve)

This graph (Fig.1) shows the relationship between the current flowing through the LED (IF) and the voltage across it (VF). It is non-linear. The curve allows designers to determine the operating voltage for a given drive current, which is crucial for selecting an appropriate current-limiting resistor or designing a constant-current driver. The voltage will have a negative temperature coefficient, meaning it decreases slightly as the junction temperature rises.

3.2 Forward Current vs. Radiant Intensity / Total Power

These graphs (Fig.2 & Fig.3) plot optical output (either intensity or total power) against forward current. They typically show a sub-linear relationship; optical output increases with current but the efficiency (output per input watt) may decrease at very high currents due to increased thermal effects and droop. Analyzing these curves helps in selecting an optimal operating point that balances output power with efficiency and device longevity.

4. Mechanical and Packaging Information

4.1 Package Dimensions and Drawing

The device is provided in an SMD package. The dimensional drawings specify the exact length, width, height, lead spacing, and lens geometry. Key notes from the datasheet: all dimensions are in millimeters, with standard tolerances of ±0.1mm unless otherwise specified. A critical handling warning is provided: Do not handle the device by the lens. Applying force to the lens can cause mechanical failure of the package.

4.2 Polarity Identification and Mounting Footprint

The package drawing clearly indicates the cathode and anode terminals. Correct polarity must be observed during PCB layout and assembly. The recommended solder pad layout (land pattern) is typically derived from the package dimensions to ensure reliable soldering and mechanical strength.

5. Soldering and Assembly Guidelines

As an SMT device, it is intended for reflow soldering processes. While specific reflow profile parameters (preheat, soak, reflow peak temperature, time above liquidus) are not detailed in this excerpt, they would generally follow standard profiles for similar plastic-packaged components, typically with a peak temperature not exceeding 260°C. The Pb-free and halogen-free compliance indicates suitability for modern, environmentally friendly manufacturing processes. The storage recommendation aligns with the operating temperature range (-40°C to +100°C), and devices should be kept in their moisture-resistant packaging until use.

6. Packaging and Ordering Information

6.1 Reel and Tape Specifications

The device is supplied on carrier tape within reels for automated pick-and-place assembly. The carrier tape dimensions are specified. Each reel contains 2000 pieces. The direction of unreeling is also indicated on the drawing to ensure proper machine setup.

6.2 Moisture-Resistant Packaging

The components are shipped in aluminum moisture-proof bags containing desiccant to control humidity. The bag includes a label with key information. While the specific label fields (like CPN, P/N, QTY, CAT, HUE, REF, LOT No.) are listed, the datasheet notes that the part number HIR-S06-P120/L649-P03/TR does not appear to use a detailed binning system for intensity, wavelength, or voltage in this document, as all typical values are listed without rank codes. The product is identified by its full part number.

7. Application Suggestions and Design Considerations

7.1 Typical Application Scenarios

The primary application is illumination for CCD/CMOS cameras in low-light or no-light conditions, enabling night-vision functionality in security cameras, automotive systems, and consumer devices. Other applications include active infrared illumination for proximity and presence detection, optical encoders, data transmission over short distances (IrDA-like applications), and object counting or sorting in industrial automation.

7.2 Critical Design Considerations

• Thermal Management: This is paramount for a high-power LED. The datasheet explicitly recommends using a heat sink. The PCB layout should include adequate thermal vias and copper area connected to the LED's thermal pad (if present) or leads to conduct heat away from the junction. Exceeding Tj=115°C will drastically reduce lifetime and can cause immediate failure.
• Drive Circuitry: LEDs are current-driven devices. A constant-current driver is highly recommended to ensure stable optical output and prevent thermal runaway. The driver must be capable of supplying up to 1A while respecting the forward voltage requirements. Reverse voltage protection should be considered.
• Optical Design: The wide 120-degree view angle provides broad coverage. For applications requiring a more focused beam, secondary optics (lenses) can be used. The water-clear lens is suitable for the 850nm wavelength.
• ESD Protection: While rated for 2kV ESD, standard ESD handling precautions should be followed during assembly and integration.

8. Technical Comparison and Differentiation

Compared to standard low-power IR LEDs, the HIR-S06-P120/L649-P03/TR's key differentiator is its high radiant output (up to 890mW) from an SMD package. This allows for brighter illumination or the ability to illuminate larger areas or achieve longer ranges. The 850nm wavelength is a common standard, offering a good balance between silicon sensor response and relative invisibility. Compared to 940nm LEDs, 850nm often produces a faint red glow at very high power but can offer higher performance with many silicon-based sensors. The wide viewing angle is an advantage for area lighting but a potential drawback if a narrow beam is required, where a device with a narrower view angle or secondary optics would be better.

9. Frequently Asked Questions (Based on Technical Parameters)

Q: Can I drive this LED directly from a 5V supply with just a resistor?

A: Possibly, but careful calculation is needed. At 1A and Vf=3.45V, a series resistor would be (5V - 3.45V)/1A = 1.55 ohms, dissipating 1.55W. This is inefficient and creates significant heat in the resistor. A constant-current driver is strongly preferred for performance and reliability.

Q: Why is a heat sink recommended even though the operating temperature is up to 100°C?

A: The 100°C rating is for ambient air temperature (Ta). The critical limit is the junction temperature (Tj) of 115°C. The power dissipated (up to ~3.45W at 1A) heats the junction above the ambient temperature. A heat sink lowers the thermal resistance between the junction and ambient air, keeping Tj within limits at high power and/or high Ta.

Q: Is this LED suitable for continuous 24/7 operation?

A: Yes, provided the Absolute Maximum Ratings are not exceeded and proper thermal management is implemented. Operating at or below the typical 700mA condition with a good heat sink would be a conservative and reliable design point for continuous operation.

Q: What is the typical lifetime of this device?

A: Lifetime (often defined as the point where light output degrades to 70% of initial) is highly dependent on operating conditions, primarily junction temperature. When operated within specifications with adequate cooling, lifetimes of tens of thousands of hours are typical for such LEDs.

10. Practical Use Case Example

Design Case: Night Vision Security Camera Module

A designer is creating a compact security camera module for outdoor use. The module includes a CCD sensor and requires IR illumination for night-time operation. The HIR-S06-P120/L649-P03/TR is selected for its high output and SMD package. Four LEDs are arranged symmetrically around the camera lens on the PCB. A dedicated constant-current driver IC provides 700mA to each LED. The PCB is designed with large copper pours connected to the LED pads via multiple thermal vias, and the entire camera housing acts as a heat sink. The wide 120-degree beam of each LED overlaps to create a uniform, wide-area illumination field suitable for the camera's field of view. The 850nm wavelength ensures good sensor response while remaining largely invisible.

11. Operational Principle

An infrared LED is a semiconductor p-n junction diode. When a forward voltage is applied, electrons from the n-type material and holes from the p-type material are injected into the junction region. When these charge carriers recombine, energy is released. In a standard LED, this energy is released as photons (light). The specific wavelength of the emitted light is determined by the bandgap energy of the semiconductor material. The HIR-S06-P120/L649-P03/TR uses a Gallium Aluminum Arsenide (GaAlAs) chip, which has a bandgap corresponding to infrared light at approximately 850nm. The water-clear epoxy lens encapsulates the chip, provides mechanical protection, and shapes the emitted light into the specified viewing angle.

12. Technology Trends and Context

High-power infrared LEDs are a mature but evolving technology. Trends include increasing wall-plug efficiency (more light output per electrical watt), which reduces thermal load. There is also a drive towards higher power densities in smaller packages, placing even greater emphasis on advanced thermal management solutions like integrated heat slugs or flip-chip designs. The demand is driven by growth in markets like automotive (LiDAR, driver monitoring), security, and machine vision. While 850nm remains a dominant wavelength due to sensor compatibility, there is also significant use of 940nm for applications requiring complete invisibility (no red glow). The integration of IR LEDs with drivers and sensors into complete modules is another ongoing trend, simplifying design for end-users.