Orange SMD LED Datasheet - EIA Package - 5V Reverse Voltage - 75mW Power - 605nm Dominant Wavelength - English Technical Document

1. Product Overview

This document details the specifications for a high-brightness, surface-mount Orange LED utilizing an AlInGaP (Aluminum Indium Gallium Phosphide) chip technology. The device is designed for compatibility with automated assembly processes and infrared reflow soldering, making it suitable for high-volume manufacturing. It is a RoHS-compliant green product, packaged in 8mm tape on 7-inch diameter reels.

1.1 Core Advantages

• Ultra Bright Output: Delivers high luminous intensity from a compact package.
• Process Compatibility: Designed for use with automatic placement equipment and standard infrared reflow solder profiles.
• IC Compatible: Suitable for direct interfacing with integrated circuits.
• Standardized Package: Conforms to EIA (Electronic Industries Alliance) standard dimensions.

1.2 Target Applications

This LED is intended for use in general electronic equipment, including but not limited to status indicators, backlighting, panel illumination, and decorative lighting in consumer electronics, office equipment, and communication devices.

2. In-Depth Technical Parameter Analysis

2.1 Absolute Maximum Ratings

The following ratings define the limits beyond which permanent damage to the device may occur. Operation under these conditions is not guaranteed.

• Power Dissipation (Pd): 75 mW at Ta=25°C.
• Peak Forward Current (I_F(peak)): 80 mA (pulsed, 1/10 duty cycle, 0.1ms pulse width).
• Continuous Forward Current (I_F): 30 mA DC.
• Derating Factor: 0.4 mA/°C linearly from 50°C ambient temperature.
• Reverse Voltage (V_R): 5 V.
• Operating Temperature Range (T_opr): -30°C to +85°C.
• Storage Temperature Range (T_stg): -40°C to +85°C.
• Infrared Soldering Condition: Withstand 260°C peak temperature for 5 seconds.

2.2 Electrical & Optical Characteristics

Typical performance parameters are measured at an ambient temperature (Ta) of 25°C and a forward current (I_F) of 5mA, unless otherwise specified.

• Luminous Intensity (I_V): Ranges from a minimum of 11.2 mcd to a maximum of 71.0 mcd, with typical values defined by bin codes.
• Viewing Angle (2θ_1/2): 130 degrees. This is the full angle at which luminous intensity drops to half of its on-axis value.
• Peak Emission Wavelength (λ_P): Typically 611 nm.
• Dominant Wavelength (λ_d): Ranges from 597 nm to 612 nm, with a typical value of 605 nm. This defines the perceived color.
• Spectral Line Half-Width (Δλ): Approximately 17 nm, indicating the spectral purity of the emitted orange light.
• Forward Voltage (V_F): Typically 2.3 V, with a maximum of 2.3 V at I_F=5mA.
• Reverse Current (I_R): Maximum 10 μA at V_R=5V.
• Capacitance (C): Typically 40 pF measured at 0V bias and 1 MHz frequency.

3. Binning System Explanation

The luminous intensity of the LEDs is sorted into bins to ensure consistency within a production lot. The bin code defines the minimum and maximum luminous intensity measured at 5mA.

• Bin Code L: 11.2 mcd (Min) to 18.0 mcd (Max)
• Bin Code M: 18.0 mcd to 28.0 mcd
• Bin Code N: 28.0 mcd to 45.0 mcd
• Bin Code P: 45.0 mcd to 71.0 mcd

A tolerance of +/-15% applies to each intensity bin. This system allows designers to select LEDs with the required brightness level for their application.

4. Performance Curve Analysis

While specific graphs are referenced in the datasheet (e.g., Fig.1, Fig.6), typical performance trends can be inferred from the parameters:

• Forward Current vs. Forward Voltage (I-V Curve): The LED exhibits a characteristic exponential I-V relationship. The specified V_F of ~2.3V at 5mA is the typical operating point.
• Luminous Intensity vs. Forward Current: Intensity generally increases with forward current, but operation must remain within the absolute maximum ratings to prevent damage and efficiency loss.
• Temperature Dependence: Luminous output typically decreases with increasing junction temperature. The derating factor for forward current (0.4 mA/°C above 50°C) is crucial for thermal management in high-temperature environments.
• Spectral Distribution: The emission spectrum is centered around 605-611 nm (orange) with a relatively narrow half-width of 17 nm, providing a saturated color.

5. Mechanical & Package Information

5.1 Package Dimensions

The LED is housed in a standard EIA-compliant surface-mount package. All dimensions are in millimeters with a general tolerance of ±0.10 mm unless otherwise noted. The lens is water clear.

5.2 Polarity Identification & Pad Design

The datasheet includes suggested soldering pad layout dimensions to ensure proper solder joint formation and mechanical stability during reflow. Polarity is indicated by the package marking or cathode/anode pad design (refer to the package drawing). Correct polarity connection is essential for device operation.

6. Soldering & Assembly Guidelines

6.1 Reflow Soldering Profile

A recommended infrared (IR) reflow profile is provided for lead-free (SnAgCu) solder processes. Key parameters include:

• Pre-heat: Ramp-up to 120-150°C.
• Pre-heat Time: Maximum 120 seconds.
• Peak Temperature: Maximum 260°C.
• Time Above Liquidus: 5 seconds maximum at peak temperature.

Adherence to this profile is critical to prevent thermal damage to the LED package and internal die.

6.2 Storage & Handling

• Storage Conditions: Recommended not to exceed 30°C and 70% relative humidity.
• Moisture Sensitivity: LEDs removed from original packaging should be reflowed within one week. For longer storage, use a sealed container with desiccant or a nitrogen ambient. If stored unpackaged for more than 672 hours, baking at 60°C for 24 hours before assembly is recommended.
• Cleaning: If necessary, clean only with ethyl alcohol or isopropyl alcohol at room temperature for less than one minute. Avoid unspecified chemicals.

7. Packaging & Ordering Information

• Tape & Reel: Supplied in 8mm wide embossed carrier tape on 7-inch (178mm) diameter reels.
• Quantity per Reel: 3000 pieces.
• Minimum Order Quantity (MOQ): 500 pieces for remainder quantities.
• Packing Standard: Complies with ANSI/EIA 481-1-A-1994 specifications. Empty pockets are sealed with cover tape.

8. Application Design Recommendations

8.1 Drive Circuit Design

LEDs are current-operated devices. To ensure uniform brightness when driving multiple LEDs in parallel, it is strongly recommended to use a series current-limiting resistor for each LED (Circuit Model A). Driving LEDs directly in parallel without individual resistors (Circuit Model B) is not recommended, as slight variations in the forward voltage (V_F) characteristics between individual LEDs can cause significant differences in current sharing and, consequently, brightness.

8.2 Electrostatic Discharge (ESD) Protection

This device is sensitive to electrostatic discharge. ESD damage can manifest as high reverse leakage current, low forward voltage, or failure to illuminate at low currents. Prevention measures include:

• Using conductive wrist straps or anti-static gloves.
• Ensuring all equipment, workstations, and storage racks are properly grounded.
• Using ionizers to neutralize static charge on the LED lens.

To check for potential ESD damage, verify the LED lights up and measure its forward voltage (V_F) at a low current (e.g., 0.1mA). A \"good\" AlInGaP LED should typically have V_F > 1.4V at this condition.

8.3 Thermal Management

Although power dissipation is relatively low (75mW max), proper PCB layout and, if necessary, thermal vias can help dissipate heat, especially when operating at high ambient temperatures or near the maximum current rating. Respect the current derating curve above 50°C ambient.

9. Technical Comparison & Differentiation

Compared to older technologies like standard GaAsP (Gallium Arsenide Phosphide) LEDs, this AlInGaP-based LED offers significantly higher luminous efficiency and brightness for the orange color spectrum. The water-clear lens, as opposed to a diffused or tinted lens, maximizes light output. Its compatibility with standard SMT assembly and reflow processes provides a cost advantage over devices requiring manual soldering or special handling.

10. Frequently Asked Questions (FAQs)

10.1 Can I drive this LED directly from a 3.3V or 5V logic output?

Not without a current-limiting resistor. The typical forward voltage is ~2.3V. Connecting it directly to a voltage source higher than V_F will cause excessive current to flow, potentially destroying the LED. Always use a series resistor calculated as R = (V_supply - V_F) / I_F.

10.2 Why is there a binning system for luminous intensity?

Manufacturing variations cause slight differences in light output. Binning sorts LEDs into groups with similar performance, allowing designers to select a consistent brightness level for their product and avoid visible differences between adjacent LEDs.

10.3 What is the difference between peak wavelength and dominant wavelength?

Peak wavelength (λ_P) is the wavelength at which the spectral power distribution is maximum (611 nm typical). Dominant wavelength (λ_d) is derived from the CIE chromaticity diagram and represents the single wavelength of the pure spectral color that matches the perceived color of the LED (605 nm typical). Dominant wavelength is more relevant for color specification.

11. Practical Design Case Study

Scenario: Designing a status indicator panel with 10 uniformly bright orange LEDs powered from a 5V rail.
Design Steps:
1. Select Bin: Choose Bin \"M\" for a mid-range intensity of 18-28 mcd.
2. Set Operating Current: Select I_F = 5mA (test condition for binning, ensures specified brightness).
3. Calculate Series Resistor: R = (5V - 2.3V) / 0.005A = 540 Ohms. Use the nearest standard value (e.g., 560 Ohms).
4. Power per LED: P = V_F * I_F ≈ 2.3V * 0.005A = 11.5 mW, well within the 75mW limit.
5. PCB Layout: Follow suggested pad dimensions. Place all 10 LEDs with their individual 560-ohm resistors in parallel from the 5V rail to ground.
6. Assembly: Follow the recommended IR reflow profile. Store opened reels in a dry cabinet if not used immediately.

12. Technology Principle Introduction

This LED is based on AlInGaP semiconductor material grown on a substrate. When a forward voltage is applied, electrons and holes are injected into the active region where they recombine, releasing energy in the form of photons (light). The specific composition of the AlInGaP alloy determines the bandgap energy, which directly corresponds to the wavelength (color) of the emitted light—in this case, in the orange spectrum (~605 nm). The water-clear epoxy lens encapsulates the chip and aids in light extraction.

13. Industry Trends

The general trend in SMD LEDs is toward higher efficiency (more lumens per watt), improved color consistency through tighter binning, and increased reliability under higher temperature and current conditions. There is also a focus on enhancing compatibility with lead-free, high-temperature reflow processes. Miniaturization continues, but for standard indicator applications, packages like this EIA standard remain popular due to their robustness, ease of handling, and well-established assembly infrastructure.