Orange SMD LED Datasheet - 0.55mm Height - 1.8V Typical Forward Voltage - 75mW Power Dissipation - English Technical Documentation

1. Product Overview

This document details the specifications for a high-performance, surface-mount Orange LED. The device is characterized by its exceptionally low profile, making it suitable for applications where vertical space is a critical constraint. The LED utilizes an AlInGaP (Aluminum Indium Gallium Phosphide) semiconductor material, which is known for delivering high luminous efficiency and excellent color purity in the orange-red spectrum. As a RoHS-compliant and green product, it adheres to contemporary environmental standards. The component is supplied in industry-standard 8mm tape on 7-inch diameter reels, facilitating compatibility with high-speed automated pick-and-place assembly equipment and infrared reflow soldering processes.

2. In-Depth Technical Parameter Analysis

All parameters are specified at an ambient temperature (Ta) of 25°C unless otherwise stated. Understanding these parameters is crucial for reliable circuit design and performance prediction.

2.1 Absolute Maximum Ratings

These ratings define the stress limits beyond which permanent damage to the device may occur. Operation under or at these limits is not guaranteed and should be avoided for long-term reliability.

• Power Dissipation (Pd): 75 mW. This is the maximum amount of power the LED package can dissipate as heat. Exceeding this limit risks thermal damage to the semiconductor junction and epoxy lens.
• DC Forward Current (IF): 30 mA. The maximum continuous forward current that can be applied.
• Peak Forward Current: 80 mA. This is permissible only under pulsed conditions with a 1/10 duty cycle and a pulse width of 0.1ms. It is useful for brief, high-intensity flashes.
• Reverse Voltage (VR): 5 V. Applying a reverse voltage beyond this rating can cause immediate and catastrophic failure of the LED junction.
• Operating Temperature Range: -30°C to +85°C. The ambient temperature range over which the device is designed to function.
• Storage Temperature Range: -40°C to +85°C.
• Infrared Soldering Condition: Withstands 260°C for 10 seconds, which is typical for lead-free (Pb-free) reflow soldering profiles.

2.2 Electro-Optical Characteristics

These parameters define the light output and electrical behavior under normal operating conditions (typically at IF = 2 mA).

• Luminous Intensity (Iv): Ranges from a minimum of 2.80 mcd to a maximum of 18.00 mcd. The actual value depends on the specific bin code (see Section 3). Intensity is measured using a sensor filtered to match the photopic (CIE) human eye response curve.
• Viewing Angle (2θ_1/2): 130 degrees. This is the full angle at which the luminous intensity drops to half of its value measured on-axis (0 degrees). A wide viewing angle like this provides a broad, diffuse illumination pattern suitable for status indicators and backlighting.
• Peak Emission Wavelength (λ_P): 611.0 nm. This is the wavelength at which the spectral power output is at its maximum.
• Dominant Wavelength (λ_d): 605.0 nm. This is a colorimetric parameter derived from the CIE chromaticity diagram. It represents the single wavelength that best describes the perceived color of the light. It is the more relevant parameter for color specification.
• Spectral Line Half-Width (Δλ): 17 nm. This indicates the spectral purity. A smaller value means a more monochromatic (pure color) light. 17 nm is typical for AlInGaP LEDs in the orange range.
• Forward Voltage (V_F): Typically 1.80V, with a range from 1.60V to 2.20V at 2 mA. This low forward voltage is a key advantage of AlInGaP technology and contributes to higher efficiency.
• Reverse Current (I_R): 10 μA maximum when a 5V reverse bias is applied.

3. Binning System Explanation

Due to inherent variations in semiconductor manufacturing, LEDs are sorted into performance bins. This system allows designers to select components that meet specific tolerance requirements for their application.

3.1 Forward Voltage Binning

Units are in Volts (V) measured at IF = 2 mA. Tolerance within each bin is ±0.1V.

• D1: 1.60V (Min) to 1.80V (Max)
• D2: 1.80V (Min) to 2.00V (Max)
• D3: 2.00V (Min) to 2.20V (Max)

Selecting a tighter voltage bin (e.g., D1 only) can be important for applications powered directly from a low-voltage battery to ensure consistent brightness as the battery discharges, or in parallel LED arrays to ensure current sharing.

3.2 Luminous Intensity Binning

Units are in millicandelas (mcd) measured at IF = 2 mA. Tolerance within each bin is ±15%.

• H: 2.80 mcd (Min) to 4.50 mcd (Max)
• J: 4.50 mcd (Min) to 7.10 mcd (Max)
• K: 7.10 mcd (Min) to 11.20 mcd (Max)
• L: 11.20 mcd (Min) to 18.00 mcd (Max)

This binning is critical for applications requiring uniform brightness across multiple LEDs, such as in multi-segment displays or backlight panels.

3.3 Dominant Wavelength Binning

Units are in nanometers (nm) measured at IF = 2 mA. Tolerance for each bin is ±1 nm.

• N: 597.0 nm (Min) to 600.0 nm (Max) – Amber-Orange
• P: 600.0 nm (Min) to 603.0 nm (Max) – Orange
• Q: 603.0 nm (Min) to 606.0 nm (Max) – Orange
• R: 606.0 nm (Min) to 609.0 nm (Max) – Orange-Red
• S: 609.0 nm (Min) to 612.0 nm (Max) – Red-Orange

This allows for precise color matching, which is essential in applications like traffic signals, automotive lighting, or decorative lighting where a specific hue is mandated.

4. Performance Curve Analysis

While specific graphs are referenced in the datasheet, their implications are standard. The forward current (I_F) vs. forward voltage (V_F) curve is exponential. The luminous intensity (I_V) is approximately linear with current in the normal operating range but will saturate at very high currents due to thermal effects and efficiency droop. The dominant wavelength has a slight negative temperature coefficient, meaning the color may shift slightly towards longer wavelengths (red shift) as the junction temperature increases. Proper heat sinking and current management are necessary to maintain consistent color and light output over the device's lifetime.

5. Mechanical and Packaging Information

5.1 Package Dimensions and Polarity

The device features an industry-standard EIA package footprint. The cathode is typically indicated by a green marking on the package or a notch in the lens. The ultra-thin profile of 0.55mm is a defining mechanical characteristic. Detailed dimensioned drawings are provided in the datasheet for PCB land pattern design.

5.2 Tape and Reel Specifications

The LEDs are supplied on 8mm wide embossed carrier tape sealed with a top cover tape, wound onto 7-inch (178mm) diameter reels. Standard reel quantity is 5,000 pieces. Packaging follows ANSI/EIA 481-1-A-1994 specifications. This format is optimized for automated assembly lines, ensuring efficient handling and placement.

6. Soldering and Assembly Guidelines

6.1 Reflow Soldering Profile

A suggested reflow profile for lead-free processes is provided. Key parameters include:

• Pre-heat: 150°C to 200°C.
• Pre-heat Time: Maximum 120 seconds to allow for proper flux activation and temperature stabilization.
• Peak Temperature: Maximum 260°C.
• Time Above Liquidus: 10 seconds maximum (recommended for a reliable solder joint).
• Number of Reflow Cycles: Maximum of two times.

The profile is based on JEDEC standards. It is critical to characterize the profile for the specific PCB design, solder paste, and oven used in production.

6.2 Hand Soldering

If hand soldering is necessary, use a temperature-controlled iron set to a maximum of 300°C. Limit the contact time to a maximum of 3 seconds per pad. Apply heat to the PCB pad, not directly to the LED body, to prevent thermal shock.

6.3 Cleaning

If post-solder cleaning is required, use only specified solvents. Immersing the LED in ethyl alcohol or isopropyl alcohol at room temperature for less than one minute is acceptable. Do not use ultrasonic cleaning or unspecified chemical cleaners, as they can damage the epoxy lens or internal bonds.

7. Storage and Handling

Proper storage is vital to prevent moisture absorption, which can cause "popcorning" (package cracking) during reflow.

• Sealed Package: Store at ≤30°C and ≤90% RH. Use within one year of the pack date.
• Opened Package: For components removed from their moisture-proof bag, the storage ambient should not exceed 30°C and 60% RH. It is strongly recommended to complete IR reflow soldering within 672 hours (28 days) of exposure.
• Extended Storage (Opened): Store in a sealed container with desiccant or in a nitrogen desiccator.
• Baking: If LEDs have been exposed for more than 672 hours, they must be baked at approximately 60°C for at least 20 hours prior to soldering to drive out absorbed moisture.

8. Application Notes and Design Considerations

8.1 Typical Application Scenarios

• Status Indicators: Its wide viewing angle and bright output make it ideal for power, connectivity, or activity indicators on consumer electronics, networking equipment, and industrial control panels.
• Backlighting: Can be used to edge-light small panels, icons, or symbols in automotive dashboards, appliances, and handheld devices.
• Decorative Lighting: Suitable for accent lighting in signage, architectural features, or toys where a specific orange hue is desired.
• Sensor Systems: Can serve as a light source in optical sensors, interrupters, or reflective object detectors.

8.2 Circuit Design Considerations

• Current Limiting: An LED is a current-driven device. Always use a series current-limiting resistor or a constant-current driver circuit. The resistor value can be calculated using Ohm's Law: R = (V_supply - V_F) / I_F. Use the maximum V_F from the datasheet for a conservative design.
• Thermal Management: While the power dissipation is low, ensuring adequate PCB copper area around the thermal pads (if any) and avoiding placement near other heat-generating components will help maintain lower junction temperature, leading to longer lifespan and stable performance.
• ESD Protection: Although not explicitly stated as sensitive, implementing basic ESD protection on signal lines connected to LEDs is a good design practice for robustness.

9. Technical Comparison and Advantages

Compared to older technologies like GaAsP (Gallium Arsenide Phosphide), this AlInGaP LED offers significant advantages:

• Higher Efficiency: AlInGaP provides more lumens per watt, resulting in brighter output for the same drive current or lower power consumption for the same brightness.
• Better Color Purity: The spectral half-width is narrower, yielding a more saturated and visually distinct orange color.
• Lower Thermal Degradation: AlInGaP maintains its light output and color stability better over temperature and time compared to older technologies.
• Ultra-Thin Profile: The 0.55mm height is a key differentiator, enabling design in increasingly slim consumer and mobile devices.

10. Frequently Asked Questions (FAQ)

10.1 What is the difference between Peak Wavelength and Dominant Wavelength?

Peak Wavelength (λ_P) is the physical wavelength where the LED emits the most optical power. Dominant Wavelength (λ_d) is a calculated value based on how the human eye perceives color. For monochromatic sources like LEDs, they are often close, but λ_d is the parameter used for color specification and binning.

10.2 Can I drive this LED at 20mA continuously?

Yes. The absolute maximum DC forward current is 30 mA. Operating at 20 mA is within the specified limit. However, you must ensure the power dissipation (V_F * I_F) does not exceed 75 mW. At a typical V_F of 1.8V and 20mA, the dissipation is 36 mW, which is safe.

10.3 Why is storage humidity so important?

The epoxy packaging material can absorb moisture from the air. During the rapid heating of reflow soldering, this trapped moisture vaporizes and expands, creating immense internal pressure. This can lead to delamination (separation of the epoxy from the lead frame) or cracking of the package, known as "popcorning," which destroys the device.

11. Design-in Case Study: A Low-Battery Indicator

Scenario: Designing a compact, handheld medical device with a 3.0V coin cell battery. A clear, visible orange LED must illuminate when battery voltage drops below 2.7V.

Design Choices:

1. Component Selection: This LED is ideal due to its low profile (fits in slim housing), low forward voltage (~1.8V), and high brightness.
2. Binning: Select a Dominant Wavelength bin "P" or "Q" for a standard orange. Select a Luminous Intensity bin "K" or "L" for high visibility. A tighter Forward Voltage bin "D1" ensures the LED turns on consistently as the battery voltage decays.
3. Circuit: A simple comparator circuit monitors battery voltage. When it trips, it enables a transistor that drives the LED via a current-limiting resistor. R = (2.7V - 1.8V) / 0.002A = 450Ω. A 470Ω standard resistor would be used, providing I_F ≈ 1.9mA, which is sufficient for indication.
4. Layout: The LED is placed on the front panel. The ultra-thin package allows it to sit behind a very slim bezel or diffuser.

12. Technology Principle Introduction

This LED is based on AlInGaP semiconductor technology. The active region is a multi-quantum well structure grown epitaxially on a substrate. When a forward voltage is applied, electrons and holes are injected into the active region where they recombine radiatively, emitting photons. The specific ratio of Aluminum, Indium, Gallium, and Phosphide in the crystal lattice determines the bandgap energy, and thus the wavelength (color) of the emitted light—in this case, orange. The light is extracted through a dome-shaped epoxy lens which also protects the semiconductor die and wire bonds.

13. Industry Trends and Developments

The trend in indicator and small-signal LEDs continues towards:

1. Miniaturization: Even thinner and smaller packages (e.g., 0.3mm height) to enable novel designs in wearables and ultra-compact electronics.
2. Higher Efficiency: Ongoing improvements in epitaxial growth and light extraction techniques push for more light output per milliampere, reducing system power consumption.
3. Improved Color Consistency: Tighter binning tolerances and advanced wafer-level testing ensure better color and brightness uniformity in mass production.
4. Integration: Growth of multi-chip packages (RGB, Bi-color) and LED modules with integrated drivers or control logic in a single package.

This component represents a mature and optimized point in the evolution of AlInGaP SMD LED technology, balancing performance, size, and manufacturability for a wide range of general lighting and indication applications.