Takardun Bayani na LED Infrared 5mm HIR333C/H0 - Kunshin 5.0mm - Tsawon Zango 850nm - Ƙarfin Wutar Gaba 1.65V - Takardun Fasaha na Hausa

1. Bayanin Samfur Wannan takarda ta yi cikakken bayani game da ƙayyadaddun bayanai na diode mai fitar da hasken infrared (IR) mai rami 5.0mm (T-1 3/4). An ƙera na'urar don fitar da haske a tsayin zango mai kololuwa na 850nm, wanda ya sa ta dace da aikace-aikace daban-daban na gano infrared da watsawa. An haɗa ta a cikin kunshin filastik mai tsabta (water-clear), wanda ke ba da damar fitar da haske mai ƙarfi.

1.1 Fa'idodi na Asali Babban fa'idodin wannan ɓangaren sun haɗa da amintaccen aiki da babban ƙarfin haske. Yana da ƙarancin ƙarfin wutar gaba (low forward voltage), wanda ke taimakawa wajen ingantaccen amfani da makamashi a cikin zane-zanen da'ira. An gina na'urar ta amfani da kayan da ba su da gubar kuma tana bin manyan ka'idojin muhalli da aminci, ciki har da RoHS, EU REACH, da ka'idojin marasa halogen (Br < 900ppm, Cl < 900ppm, Br+Cl < 1500ppm).

1.2 Kasuwa da Aikace-aikace Wannan LED infrared tana daidaitaccen tsayin zango tare da na'urori masu gano haske na silicon na gama-gari, kamar phototransistors, photodiodes, da na'urori masu karɓar infrared. Aikace-aikacenta na al'ada sun haɗa da: Tsarin watsa bayanai ta iska (Free-air transmission). Na'urorin sarrafa nesa na infrared waɗanda ke buƙatar ƙarin ƙarfin wutar fitarwa. Tsarin gano hayaƙi. Gabaɗaya tsarin aikace-aikacen infrared don gano abubuwa.

2. Bincike Mai zurfi na Ma'auni na Fasaha Sasannin masu zuwa suna ba da cikakken bayani game da halayen lantarki, haske, da zafi na na'urar.

2.1 Matsakaicin Matsakaicin Matsayi Waɗannan ma'auni suna ayyana iyakokin da za su iya haifar da lalacewa ta dindindin ga na'urar. Ba a nufin su don aiki na ci gaba ba. Ƙarfin Gaba na Ci gaba (IF): 100 mA Ƙarfin Gaba Mai Kololuwa (IFP): 1.0 A (Faɗin bugun jini ≤100μs, Tsarin Aiki ≤1%) Ƙarfin Wuta Baya (VR): 5 V Yanayin Zafi na Aiki (Topr): -40°C zuwa +85°C Yanayin Zafi na Ajiya (Tstg): -40°C zuwa +85°C Yanayin Zafi na Solder (Tsol): 260°C na ≤5 seconds Rushewar Wutar Lantarki (Pd) a 25°C: 150 mW

2.2 Halayen Lantarki da Haske Ana auna waɗannan ma'auni a yanayin zafi (Ta) na 25°C kuma suna ayyana aikin na'urar na al'ada a ƙarƙashin ƙayyadaddun yanayi. Ƙarfin Haske (Ie): Matsakaicin ƙimar ƙima ita ce 7.8 mW/sr a ƙarfin gaba (IF) na 20mA. A ƙarƙashin yanayin bugun jini (IF=100mA, Faɗin bugun jini ≤100μs, Tsarin Aiki ≤1%), matsakaicin ƙarfin haske shine 80 mW/sr. A kololuwar ƙarfin na 1A a ƙarƙashin irin wannan yanayin bugun jini, yana kaiwa 800 mW/sr. Tsayin Zango Mai Kololuwa (λp): 850 nm (na al'ada) a IF=20mA. Faɗin Tsayin Zango (Δλ): 45 nm (na al'ada) a IF=20mA, yana nuna faɗin tsayin zango a rabin matsakaicin ƙarfin. Ƙarfin Wutar Gaba (VF): Ya bambanta daga 1.45V (na al'ada) zuwa matsakaicin 1.65V a IF=20mA. Yana ƙaruwa tare da mafi girman ƙarfin lantarki, yana kaiwa matsakaicin 2.40V a 100mA da 5.25V a 1A a ƙarƙashin aikin bugun jini. Ƙarfin Baya (IR): Matsakaicin 10 μA a VR=5V. Kusurwar Dubawa (2θ1/2): 30 digiri (na al'ada) a IF=20mA, yana ayyana faɗin kusurwar inda ƙarfin haske ya kasance aƙalla rabin ƙimar kololuwa.

• 2.3 Halayen Zafi Aikin na'urar yana dogara da zafi. Matsakaicin rushewar wutar lantarki an ƙididdige shi da 150 mW a cikin iska kyauta a 25°C. Dole ne masu zane su yi la'akari da rage wannan ƙimar lokacin aiki a mafi girman yanayin zafi don tabbatar da amincin dogon lokaci da hana zafi ya yi yawa.
• 3. Bayanin Tsarin Rarrabawa (Binning) Samfurin yana samuwa a cikin nau'ikan ayyuka daban-daban, ko "kwandon shara," dangane da ƙarfin haske da aka auna a IF=20mA. Wannan yana ba masu zane damar zaɓar ɓangaren da ya dace daidai da buƙatun hankali na aikace-aikacensu. Tsarin rarrabawa don ƙarfin haske shine kamar haka: Kwandon M: 7.8 - 12.5 mW/sr Kwandon N: 11.0 - 17.6 mW/sr Kwandon P: 15.0 - 24.0 mW/sr Kwandon Q: 21.0 - 34.0 mW/sr Kwandon R: 30.0 - 48.0 mW/sr Takardun bayanin kuma yana nuna cewa na'urar tana samuwa tare da matsayi don Tsayin Zango Mai Rinjaye (HUE) da Ƙarfin Wutar Gaba (REF), ko da yake ba a yi cikakken bayani game da lambobin kwandon shara na waɗannan ma'auni ba a cikin abin da aka samo.
• 4. Binciken Lankwasa Ayyuka Bayanan hoto suna ba da haske mai zurfi game da halayen na'urar a ƙarƙashin yanayi daban-daban.
• 4.1 Ƙarfin Gaba daidai da Yanayin Zafi Wannan lankwasa tana nuna rage ƙimar matsakaicin ƙarfin gaba da aka yarda yayin da yanayin zafi ya ƙaru sama da 25°C. Don kiyaye aminci, dole ne a rage ƙarfin aiki a mafi girman yanayin zafi.

4.2 Rarraba Tsawon Zango Hotun yana kwatanta matsakaicin ƙarfin haske a faɗin tsayin zango, wanda ya ta'allaka ne a kusa da kololuwar 850nm. Faɗin tsayin zango na 45nm yana nuna kewayon tsayin zango da ake fitarwa.

4.3 Tsayin Zango Mai Kololuwa daidai da Yanayin Zafi Wannan alaƙa tana nuna yadda tsayin zango mai kololuwa (λp) ke canzawa tare da canje-canje a yanayin zafi na haɗuwa. Yawanci, tsayin zango yana ƙaruwa kaɗan tare da hawan zafi, wanda shine muhimmin abu a cikin aikace-aikacen da ke buƙatar daidaitaccen tsayin zango tare da na'urar gano abu.

4.4 Ƙarfin Gaba daidai da Ƙarfin Wutar Gaba (Lankwasa IV) Wannan lankwasa ta asali tana kwatanta alaƙar ƙarfin wutar lantarki da aka yi amfani da ita a kan diode da sakamakon kwararar lantarki. Yana da mahimmanci don zana da'irar iyakance ƙarfin lantarki (misali, zaɓar resistor na jerin).

4.5 Ƙarfin Haske daidai da Ƙarfin Gaba Wannan makircin yana nuna cewa ƙarfin haske yana ƙaruwa da ƙarfi tare da ƙarfin gaba. Duk da haka, yin aiki a cikin ƙarfin lantarki mai yawa (musamman DC) yana haifar da ƙarin zafi da yuwuwar asarar inganci, yana sa aikin bugun jini ya fi dacewa don buƙatun ƙarfin haske.

• 4.6 Matsakaicin Ƙarfin Haske daidai da Karkatar Kusu Wannan hoton polar yana wakiltar kusurwar dubawa (2θ1/2 = 30°) a zahiri. Yana nuna yadda ƙarfin yake raguwa yayin da kusurwar lura ta tashi daga tsakiyar axis (0°), wanda ke da mahimmanci don zana tsarin haske da daidaita masu fitar da haske tare da na'urori masu gano abu.5. Bayanin Injiniya da Kunshi 5.1 Girman Kunshi Na'urar ta yi daidai da daidaitaccen kunshin T-1 3/4 (5mm) mai ƙafar radial. Manyan girmansu sun haɗa da matsakaicin diamita na kusan 5.0mm da daidaitaccen tazarar ƙafa na 2.54mm (0.1 inches), wanda ya dace da daidaitattun allunan rami. Zanen girma yana ƙayyadaddun ƙimar ±0.25mm sai dai idan an faɗi akasin haka. An ayyana ainihin siffar kumfa na ruwan tabarau da tsayin ƙafar a cikin cikakken zanen kunshi. 5.2 Gano Polarity Ana gano cathode ta hanyar wuri mai lebur a gefen ruwan tabarau na filastik ko ta ƙafar gajere. Dole ne a kiyaye polarity daidai yayin haɗa da'ira don hana lalacewar baya.
• 6. Jagororin Solder da Haɗawa Daidaitaccen sarrafawa yana da mahimmanci don hana lalacewar injiniya da zafi. 6.1 Siffantar ƙafar LED Dole ne lanƙwasa ta faru aƙalla 3mm daga gindin kwalliyar epoxy. Siffata ƙafafu kafin solder. Kauce wa sanya matsin lamba akan kunshi yayin lanƙwasa. Yanke ƙafafu a yanayin daki. Tabbatar da ramukan PCB sun yi daidai da ƙafafun LED don guje wa matsin lamba na hawa. 6.2 Yanayin Ajiya Ajiye a ≤30°C da ≤70% Yanayin Danshi (RH). Matsakaicin rayuwar ajiya a cikin ainihin kunshi shine watanni 3. Don ajiyar dogon lokaci (har zuwa shekara 1), yi amfani da akwati mai rufewa tare da yanayin nitrogen da abin bushewa. Kauce wa saurin canjin yanayin zafi a cikin yanayi mai danshi don hana hazo. 6.3 Ma'auni na Solder Solder da Hannu: Zafin ƙarshen gwangwani ≤300°C (don matsakaicin gwangwani 30W), lokacin solder ≤3 seconds kowace ƙafa. Kiyaye mafi ƙarancin nisa na 3mm daga haɗin solder zuwa kwalliyar epoxy. Solder Wave/Dip: Zafin preheat ≤100°C na ≤60 seconds. Zafin wanka na solder ≤260°C na ≤5 seconds. Kiyaye ƙa'idar nisa na 3mm. Dokoki na Gabaɗaya: Kada ku sanya matsin lamba akan ƙafafu a babban zafi. Kada ku yi solder iri ɗaya na'urar fiye da sau ɗaya. Kare na'urar daga girgiza/girgiza yayin sanyaya zuwa yanayin daki. Kada ku yi amfani da hanyoyin sanyaya mai sauri. Bi shawarar shirin solder don solder wave. 6.4 Tsaftacewa Takardun bayanin ya ambaci cewa ya kamata a yi tsaftacewa ne kawai lokacin da ake buƙata, ko da yake ba a yi cikakken bayani game da shawarwarin wakili na tsaftacewa ko ma'auni na tsaftacewa ta ultrasonic ba a cikin abin da aka samo. Al'adar daidaitawa ita ce amfani da masu tsaftacewa masu laushi, waɗanda ba su da ƙarfi kuma sun dace da epoxy.7. Bayanin Kunshi da Oda 7.1 Ƙayyadaddun Kunshi An tattara na'urar a cikin jakunkunan hana tashin hankali (anti-static) don kariya daga ESD. Tsarin tattarawa na al'ada shine: 1. Guda 500 a kowace jakar hana tashin hankali. 2. Jakuna 5 (guda 2,500) a kowace akwatin ciki. 3. Akwatuna ciki 10 (guda 25,000) a kowace babban akwatin waje. 7.2 Ƙayyadaddun Tsarin Label Lambobin samfur sun haɗa da mahimman bayanai don gano asali da ganewa: - CPN (Lambar Bangaren Abokin Ciniki) - P/N (Lambar Bangaren Masana'anta: HIR333C/H0) - QTY (Adadin Tattarawa) - CAT (Matsayi na Ƙarfin Haske, misali, M, N, P, Q, R) - HUE (Matsayi na Tsayin Zango Mai Rinjaye) - REF (Matsayi na Ƙarfin Wutar Gaba) - LOT No. (Lambar Rukuni don gano asali) - Lambar Kwanan Wata
• 8. Abubuwan da ake Bincike a Zance na Aikace-aikace 8.1 Da'irori na Aikace-aikace na Al'ada Mafi yawan da'irar tuƙi ita ce resistor na jerin mai sauƙi don iyakance ƙarfin gaba. Ana ƙididdige ƙimar resistor (R) ta amfani da Dokar Ohm: R = (Vcc - Vf) / If, inda Vcc shine ƙarfin wutar lantarki, Vf shine ƙarfin wutar gaba na LED (yi amfani da matsakaicin ƙima don aminci), kuma If shine ƙarfin gaba da ake so. Don aikin bugun jini (misali, a cikin sarrafa nesa), yawanci ana amfani da maɓalli na transistor don isar da ƙarfin lantarki mai kololuwa (har zuwa 1A) yayin kiyaye ƙaramin tsarin aiki don kiyaye matsakaicin ƙarfin wutar lantarki a cikin iyakoki. 8.2 Bayanin Kula game da Zane na Haske Kusurwar dubawa na digiri 30 tana ba da daidaito mai kyau tsakanin tattara haske da ɗaukar hoto. Don tazara mai tsawo ko aikace-aikacen haske mai kunkuntar, ana iya buƙatar na'urorin haske na biyu (ruwan tabarau). Ruwan tabarau mai tsabta yana da kyau don watsa 850nm. Tabbatar cewa mai karɓa (phototransistor, photodiode, ko IC) yana da hankali a cikin yankin 850nm don matsakaicin ingancin tsarin. 8.3 Gudanar da Zafi Ko da yake kunshin zai iya watsar da 150mW a 25°C, ingantaccen zafin zafi ta hanyar ƙafafu ko a hankali shimfidar allon yana da mahimmanci don ci gaba da aiki a cikin ƙarfin lantarki mai yawa ko hawan yanayin zafi. Yin amfani da yanayin tuƙi na bugun jini yana rage matsakaicin rushewar wutar lantarki da matsin lamba na zafi sosai.9. Kwatance da Bambance-bambancen Fasaha Idan aka kwatanta da daidaitattun LEDs na gani ko wasu LEDs na infrared, bambance-bambancen na'urar shine haɗuwarta na babban ƙarfin haske (har zuwa 48 mW/sr a cikin Kwandon R), ƙarancin ƙarfin wutar gaba (na al'ada 1.45V), da cikakken bin ka'idojin muhalli (RoHS, REACH, Marasa Halogen). Amfani da kayan guntu na GaAlAs shine daidaitaccen don fitar da 850nm mai inganci. Kunshin 5mm yana ba da siffa mai ƙarfi mai rami wanda ya dace da aikace-aikace masu yawa na masana'antu da na mabukaci inda na'urorin hawa saman ƙasa ba su da kyau.
• 10. Tambayoyin da ake Yawan Yi (FAQ) Q: Zan iya tuƙa wannan LED a ci gaba a 100mA? A: Matsakaicin Matsayi na Ci gaba na Ƙarfin Gaba shine 100mA. Duk da haka, ci gaba da aiki a wannan matsakaicin ƙarfin lantarki zai haifar da zafi mai yawa (Pd ≈ Vf * If). Don aiki na dogon lokaci mai aminci, yana da kyau a rage ƙarfin lantarki, musamman idan yanayin zafi ya fi 25°C, ko kuma a yi amfani da mai sanyaya zafi. Q: Menene bambanci tsakanin kwandon shara (M, N, P, Q, R)? A: Kwandon shara yana rarraba mafi ƙarancin da matsakaicin ƙarfin haske na LED lokacin da aka tuƙa shi a 20mA. Kwandon M yana da mafi ƙarancin fitarwa (7.8-12.5 mW/sr), kuma Kwandon R yana da mafi girma (30.0-48.0 mW/sr). Zaɓi kwandon shara dangane da ƙarfin siginar da ake buƙata da hankalin da'irar mai karɓa. Q: Me ya sa ƙarfin wutar gaba ya fi girma a 1A fiye da a 20mA? A> Wannan ya faru ne saboda juriya na ciki na jerin guntu na semiconductor da wayoyin haɗin kai. Yayin da ƙarfin lantarki ke ƙaruwa, faɗuwar wutar lantarki a kan wannan juriya (V = I*R) yana ƙaruwa, yana haifar da mafi girman jimillar ƙarfin wutar gaba. Q: Ta yaya zan cimma ƙarfin haske na 800 mW/sr? A: An ƙayyade wannan ƙarfin a ƙarƙashin yanayin bugun jini: ƙarfin gaba na 1A, tare da faɗin bugun jini na microseconds 100 ko ƙasa da haka, da kuma tsarin aiki na 1% ko ƙasa da haka. Wannan yana rage zafi yayin ba da damar fitar da haske mai ƙarfi na nan take.11. Nazarin Shari'o'in Zane da Amfani Nazarin Shari'a 1: Sarrafa Nesa na Infrared Mai Nisa Mai zane yana buƙatar sarrafa nesa mai nisa fiye da mita 30. Sun zaɓi HIR333C/H0 a cikin Kwandon R don matsakaicin fitarwa. Da'irar tana amfani da microcontroller don samar da bugun jini na bayanai. Ana tuƙa LED tare da bugun jini na 1A (faɗi 100μs, tsarin aiki 1%) ta hanyar maɓalli na transistor NPN. Babban ƙarfin kololuwa yana tabbatar da cewa siginar mai ƙarfi ya isa mai karɓa mai nisa, yayin da ƙaramin tsarin aiki yana kiyaye amfani da baturi da zafin na'urar ƙasa. Nazarin Shari'a 2: Na'urar Gano Kusa a cikin Muhallin Masana'antu Injin mai sarrafa kansa yana buƙatar na'urar gano kusa mai ƙarfi. An sanya LED infrared da phototransistor a gaban juna a kan hanyar jigilar kaya. Ana tuƙa LED tare da ƙarfin lantarki na 50mA na ci gaba (an rage shi daga matsakaicin 100mA don aminci). Tsayin zango na 850nm ba shi da saukin kamuwa da tsangwama daga hasken gani na yanayi fiye da LEDs ja na gani. Hasken digiri 30 yana ba da isasshen ɗaukar hoto ba tare da yaduwa mai yawa ba. Na'urar gano abu tana gano lokacin da wani abu ya karya hasken.
• 12. Ka'idar Aiki LED Infrared (IR LED) diode ne na semiconductor p-n junction. Lokacin da aka yi amfani da ƙarfin wutar gaba, electrons daga yankin n suna haɗuwa tare da ramuka daga yankin p a cikin yankin aiki na guntu. Wannan tsarin haɗuwa yana sakin makamashi a cikin nau'in photons (haske). Takamaiman kayan da ake amfani da su a cikin yankin aiki na guntu (a wannan yanayin, Gallium Aluminum Arsenide - GaAlAs) yana ƙayyade tsayin zango na photons da aka fitar. Ga GaAlAs, wannan yana haifar da hasken infrared tare da tsayin zango mai kololuwa kusan 850nm, wanda ba a iya gani da idon ɗan adam amma ana iya gano shi cikin sauƙi ta na'urori masu gano haske na tushen silicon.13. Trends na Fasaha Trend a cikin LEDs na infrared yana ci gaba zuwa mafi girman inganci (ƙarin fitarwa na haske a kowace watt na lantarki), wanda ke ba da damar ko dai rage amfani da wutar lantarki ko mafi girman fitarwa daga kunshi ɗaya. Hakanan akwai yunƙuri zuwa ga mafi girman damar daidaitawa don aikace-aikacen sadarwar bayanai kamar IrDA da hanyoyin sadarwa na wayar tarho ta gani. Kunshi yana haɓaka don haɗa da na'urorin hawa saman ƙasa (SMDs) tare da ingantaccen aikin zafi don aikace-aikace masu ƙarfin wutar lantarki, ko da yake kunshin rami kamar 5mm suna ci gaba da shahara saboda ƙarfin injiniyarsu da sauƙin ƙirar samfuri. Haɗawa tare da da'irar tuƙi da na'urori masu gano haske zuwa guda ɗaya na'urar wani sabon abu ne na gama gari don sauƙaƙe ƙirar tsarin.
• Soldering Temperature (Tsol):°C for ≤5 seconds
• Power Dissipation (Pd) at 25°C: mW

.2 Electro-Optical Characteristics

These parameters are measured at an ambient temperature (Ta) of 25°C and define the device's typical performance under specified conditions.

• Radiant Intensity (Ie):The minimum typical value is 7.8 mW/sr at a forward current (IF) of 20mA. Under pulsed conditions (IF=100mA, Pulse Width ≤100μs, Duty ≤1%), the typical radiant intensity is 80 mW/sr. At the peak current of 1A under the same pulsed conditions, it reaches 800 mW/sr.
• Peak Wavelength (λp): nm (typical) at IF=20mA.
• Spectral Bandwidth (Δλ): nm (typical) at IF=20mA, indicating the spectral width at half the maximum intensity.
• Forward Voltage (VF):Ranges from 1.45V (typical) to a maximum of 1.65V at IF=20mA. It increases with higher current, reaching a maximum of 2.40V at 100mA and 5.25V at 1A under pulsed operation.
• Reverse Current (IR):Maximum of 10 μA at VR=5V.
• View Angle (2θ1/2): degrees (typical) at IF=20mA, defining the angular spread where the radiant intensity is at least half of its peak value.

.3 Thermal Characteristics

The device's performance is temperature-dependent. The maximum power dissipation is rated at 150 mW in free air at 25°C. Designers must consider derating this value when operating at higher ambient temperatures to ensure long-term reliability and prevent thermal runaway.

. Binning System Explanation

The product is available in different performance grades, or "bins," based on radiant intensity measured at IF=20mA. This allows designers to select a component that precisely matches their application's sensitivity requirements.

The binning structure for radiant intensity is as follows:

• Bin M:.8 - 12.5 mW/sr
• Bin N:.0 - 17.6 mW/sr
• Bin P:.0 - 24.0 mW/sr
• Bin Q:.0 - 34.0 mW/sr
• Bin R:.0 - 48.0 mW/sr

The datasheet also indicates that the device is available with ranks for Dominant Wavelength (HUE) and Forward Voltage (REF), though specific bin codes for these parameters are not detailed in the provided excerpt.

. Performance Curve Analysis

Graphical data provides deeper insight into the device's behavior under varying conditions.

.1 Forward Current vs. Ambient Temperature

This curve shows the derating of the maximum allowable forward current as the ambient temperature increases above 25°C. To maintain reliability, the operating current must be reduced at higher temperatures.

.2 Spectral Distribution

The graph illustrates the relative radiant power output across the wavelength spectrum, centered around the 850nm peak. The 45nm bandwidth indicates the range of wavelengths emitted.

.3 Peak Emission Wavelength vs. Ambient Temperature

This relationship shows how the peak wavelength (λp) shifts with changes in the junction temperature. Typically, the wavelength increases slightly with rising temperature, which is a critical factor in applications requiring precise spectral matching with a detector.

.4 Forward Current vs. Forward Voltage (IV Curve)

This fundamental curve depicts the exponential relationship between the voltage applied across the diode and the resulting current flow. It is essential for designing the current-limiting circuitry (e.g., selecting a series resistor).

.5 Radiant Intensity vs. Forward Current

This plot demonstrates that radiant intensity increases super-linearly with forward current. However, operating at very high currents (especially DC) leads to increased heat generation and potential efficiency loss, making pulsed operation preferable for high-intensity requirements.

.6 Relative Radiant Intensity vs. Angular Displacement

This polar plot visually represents the view angle (2θ1/2 = 30°). It shows how the intensity diminishes as the observation angle moves away from the central axis (0°), which is crucial for designing optical systems and aligning emitters with detectors.

. Mechanical and Package Information

.1 Package Dimensions

The device conforms to the standard T-1 3/4 (5mm) radial leaded package. Key dimensions include the overall diameter of approximately 5.0mm and a standard lead spacing of 2.54mm (0.1 inches), compatible with standard perforated boards. The dimensional drawing specifies tolerances of ±0.25mm unless otherwise noted. The exact shape of the lens dome and the lead length are defined in the detailed package drawing.

.2 Polarity Identification

The cathode is typically identified by a flat spot on the plastic lens rim or by the shorter lead. Correct polarity must be observed during circuit assembly to prevent reverse bias damage.

. Soldering and Assembly Guidelines

Proper handling is critical to prevent mechanical and thermal damage.

.1 Lead Forming

• Bending must occur at least 3mm from the base of the epoxy bulb.
• Form leads before soldering.
• Avoid applying stress to the package during bending.
• Cut leads at room temperature.
• Ensure PCB holes align perfectly with LED leads to avoid mounting stress.

.2 Storage Conditions

• Store at ≤30°C and ≤70% Relative Humidity (RH).
• Maximum storage life in original packaging is 3 months.
• For longer storage (up to 1 year), use a sealed container with a nitrogen atmosphere and desiccant.
• Avoid rapid temperature changes in humid environments to prevent condensation.

.3 Soldering Parameters

Hand Soldering:Iron tip temperature ≤300°C (for a 30W max iron), soldering time ≤3 seconds per lead. Maintain a minimum distance of 3mm from the solder joint to the epoxy bulb.

Wave/Dip Soldering:Preheat temperature ≤100°C for ≤60 seconds. Solder bath temperature ≤260°C for ≤5 seconds. Maintain the 3mm distance rule.

General Rules:Do not apply stress to leads at high temperature. Avoid soldering the same device more than once. Protect the device from shock/vibration while cooling to room temperature. Do not use rapid cooling processes. Follow the recommended soldering profile for wave soldering.

.4 Cleaning

The datasheet mentions that cleaning should be performed only when necessary, though specific cleaning agent recommendations or ultrasonic cleaning parameters are not detailed in the provided excerpt. Standard practice is to use mild, non-aggressive cleaners compatible with epoxy resin.

. Packaging and Ordering Information

.1 Packaging Specification

The device is packed in anti-static bags for ESD protection. The standard packing flow is:

. 500 pieces per anti-static bag.

. 5 bags (2,500 pieces) per inner carton.

. 10 inner cartons (25,000 pieces) per master outside carton.

.2 Label Form Specification

Product labels include key information for traceability and identification:

- CPN (Customer's Part Number)

- P/N (Manufacturer's Part Number: HIR333C/H0)

- QTY (Packing Quantity)

- CAT (Luminous/Radient Intensity Rank, e.g., M, N, P, Q, R)

- HUE (Dominant Wavelength Rank)

- REF (Forward Voltage Rank)

- LOT No. (Lot Number for traceability)

- Date Code

. Application Design Considerations

.1 Typical Application Circuits

The most common drive circuit is a simple series resistor to limit the forward current. The resistor value (R) is calculated using Ohm's Law: R = (Vcc - Vf) / If, where Vcc is the supply voltage, Vf is the LED's forward voltage (use max value for reliability), and If is the desired forward current. For pulsed operation (e.g., in remote controls), a transistor switch is typically used to deliver high peak currents (up to 1A) while maintaining a low duty cycle to keep average power within limits.

.2 Optical Design Notes

The 30-degree view angle provides a good balance between beam concentration and coverage. For longer range or narrower beam applications, secondary optics (lenses) may be required. The water-clear lens is optimal for 850nm transmission. Ensure the receiver (phototransistor, photodiode, or IC) is spectrally sensitive in the 850nm region for maximum system efficiency.

.3 Thermal Management

Although the package can dissipate 150mW at 25°C, effective heat sinking through the leads or careful board layout is necessary for continuous operation at high currents or elevated ambient temperatures. Using pulsed drive mode significantly reduces average power dissipation and thermal stress.

. Technical Comparison and Differentiation

Compared to standard visible LEDs or other IR LEDs, this device's key differentiators are its combination ofhigh radiant intensity(up to 48 mW/sr in Bin R),low forward voltage(typically 1.45V), andcomprehensive environmental compliance(RoHS, REACH, Halogen-Free). The use of GaAlAs chip material is standard for high-efficiency 850nm emission. The 5mm package offers a robust through-hole form factor suitable for a wide range of industrial and consumer applications where surface-mount devices may not be ideal.

. Frequently Asked Questions (FAQ)

Q: Can I drive this LED continuously at 100mA?

A: The Absolute Maximum Rating for continuous forward current is 100mA. However, continuous operation at this maximum current will generate significant heat (Pd ≈ Vf * If). For reliable long-term operation, it is advisable to derate the current, especially if the ambient temperature is above 25°C, or to use a heat sink.

Q: What is the difference between the bins (M, N, P, Q, R)?

A: The bins categorize the minimum and maximum radiant intensity of the LED when driven at 20mA. Bin M has the lowest output (7.8-12.5 mW/sr), and Bin R has the highest (30.0-48.0 mW/sr). Select a bin based on the required signal strength and sensitivity of your receiver circuit.

Q: Why is the forward voltage higher at 1A than at 20mA?

A> This is due to the internal series resistance of the semiconductor die and the bond wires. As current increases, the voltage drop across this resistance (V = I*R) increases, leading to a higher total forward voltage.

Q: How do I achieve the 800 mW/sr radiant intensity?

A: This intensity is specified under pulsed conditions: a forward current of 1A, with a pulse width of 100 microseconds or less, and a duty cycle of 1% or less. This minimizes heating while allowing very high instantaneous optical output.

. Design and Usage Case Studies

Case Study 1: Long-Range Infrared Remote Control

A designer needs a remote control with a range of over 30 meters. They select the HIR333C/H0 in Bin R for maximum output. The circuit uses a microcontroller to generate modulated data pulses. The LED is driven with 1A pulses (100μs width, 1% duty cycle) via an NPN transistor switch. The high peak intensity ensures a strong signal reaches the distant receiver, while the low duty cycle keeps battery consumption and device heating minimal.

Case Study 2: Proximity Sensor in an Industrial Environment

An automated machine requires a robust proximity sensor. An IR LED and a phototransistor are placed opposite each other across a conveyor path. The LED is driven with a constant 50mA current (derated from the 100mA max for reliability). The 850nm wavelength is less susceptible to interference from ambient visible light than visible red LEDs. The 30-degree beam provides sufficient coverage without excessive spreading. The sensor detects when an object breaks the beam.

. Operating Principle

An Infrared Light Emitting Diode (IR LED) is a semiconductor p-n junction diode. When a forward voltage is applied, electrons from the n-region recombine with holes from the p-region within the active region of the chip. This recombination process releases energy in the form of photons (light). The specific material used in the chip's active region (in this case, Gallium Aluminum Arsenide - GaAlAs) determines the wavelength of the emitted photons. For GaAlAs, this results in infrared light with a peak wavelength around 850nm, which is invisible to the human eye but easily detectable by silicon-based photodetectors.

. Technology Trends

The trend in infrared LEDs continues toward higher efficiency (more radiant output per electrical watt input), which allows for either lower power consumption or higher output from the same package. There is also a drive toward higher-speed modulation capabilities for data communication applications like IrDA and optical wireless networks. Packaging is evolving to include surface-mount devices (SMDs) with improved thermal performance for high-power applications, though through-hole packages like the 5mm remain popular for their mechanical robustness and ease of prototyping. Integration with driver circuitry and photodetectors into single modules is another common trend for simplified system design.