Takardar Bayani na Fasaha ta EL-SAF02065JA - Diyod na SiC Schottky 650V a cikin Kunshin TO-220-2L

1. Bayanin Samfur

EL-SAF02065JA babban Diyod na Silicon Carbide (SiC) Schottky Barrier Diode (SBD) ne wanda aka ƙera don aikace-aikacen lantarki masu ƙarfi. An haɗa shi a cikin daidaitaccen kunshin TO-220-2L, wannan na'urar tana amfani da mafi kyawun kaddarorin kayan SiC don samar da fa'idodi masu mahimmanci akan diyod na silicon na gargajiya, musamman a cikin tsarin canza wutar lantarki mai girma da inganci.

Babban aikinsa shine samar da kwararar wutar lantarki guda ɗaya tare da ƙarancin asarar sauyawa da cajin dawowa baya. Babban kasuwar wannan kayan ya haɗa da na'urorin wutar lantarki na zamani (SMPS), masu juyawa makamashin sabuntawa, tuƙin mota, da na'urorin wutar lantarki marasa katsewa (UPS) inda ingancin tsarin, yawan wutar lantarki, da sarrafa zafi suke cikin mahimman sigogi na ƙira.

2. Bincike mai zurfi na Sigogi na Fasaha

2.1 Halayen Lantarki

Sigogin lantarki suna ayyana iyakokin aiki da aikin diyod a ƙarƙashin takamaiman yanayi.

• Matsakaicin Ƙarfin Baya Maimaitawa (VRRM):650V. Wannan shine matsakaicin ƙarfin baya na lokaci-lokaci wanda diyod zai iya jurewa akai-akai. Yana ayyana ƙimar ƙarfin lantarki na na'urar a aikace-aikace kamar da'irori na gyara ƙarfin lantarki (PFC).
• Ƙarfin Gaba na Ci gaba (IF):20A. Wannan shine matsakaicin matsakaicin ƙarfin gaba wanda diyod zai iya gudanar da ci gaba, an iyakance shi da juriyar zafi daga junction zuwa akwati da matsakaicin zafin junction.
• Ƙarfin Gaba (VF):Yawanci 1.5V a IF=20A da Tj=25°C, tare da matsakaicin 1.85V. Wannan sigogi yana tasiri kai tsaye ga asarar gudanarwa. Takardar bayani kuma tana ƙayyadad da VF a matsakaicin zafin junction (Tj=175°C), wanda yake da mahimmanci ga ƙirar zafi, yana nuna ƙimar al'ada na 1.9V.
• Ƙarfin Baya (IR):Mahimmin nuni na yoyo. A VR=520V, IR yawanci 4µA ne a 25°C kuma yana ƙaruwa zuwa 40µA a 175°C. Wannan ƙaramin yoyo yana ba da gudummawa ga babban inganci, musamman a yanayin jiran aiki.
• Jimlar Cajin Capacitive (QC):Muhimmin sigogi don lissafin asarar sauyawa. A VR=400V da Tj=25°C, QC yawanci 30nC ne. Wannan ƙaramin ƙima alama ce ta diyod na SiC Schottky kuma shine ke da alhakin halayensu na "ba su da asarar sauyawa" idan aka kwatanta da diyod na silicon PN junction tare da babban cajin dawowa baya (Qrr).
• Ƙarfin Gaba na Guguwa mara Maimaitawa (IFSM):51A don bugun rabin sine na 10ms a Tc=25°C. Wannan ƙimar tana nuna ikon diyod na ɗaukar gajeriyar da'ira ko abubuwan shigar da ƙarfin lantarki.

2.2 Halayen Zafi

Ingantaccen sarrafa zafi yana da mahimmanci don aiki mai aminci da cimma ƙimar aiki.

• Matsakaicin Zafin Junction (TJ):175°C. Wannan shine matsakaicin zafin jiki wanda junction na semiconductor zai iya kaiwa.
• Juriyar Zafi, Junction-zuwa-Akwati (RθJC):2.0 °C/W (na al'ada). Wannan ƙaramin juriyar zafi yana da mahimmanci don ingantaccen canja wurin zafi daga guntun silicon carbide zuwa akwatin kunshi, sannan kuma, zuwa mai sanyaya zafi. An jera ɓarnawar wutar lantarki (PD) a matsayin 75W a Tc=25°C, amma wannan an iyakance shi da farko ta matsakaicin TJ da RθJC a aikace-aikace na gaske.
• Torque na Haɗawa (Md):An ƙayyade shi azaman 8.8 Nm don dunƙule M3 ko 6-32. Daidaitaccen torque yana tabbatar da mafi kyawun hulɗar zafi tsakanin tab na kunshi da mai sanyaya zafi.

3. Binciken Lanƙwasa Aiki

Takardar bayani tana ba da lanƙwasa halaye da yawa masu mahimmanci don ƙira da kwaikwayon da'ira.

3.1 Halayen VF-IF

Wannan jadawali yana nuna faɗuwar ƙarfin gaba akan ƙarfin gaba, yawanci a yawan zafin junction (misali, 25°C, 125°C, 175°C). Yana nuna ingantaccen coefficient na zafi na VF, wanda ke taimakawa wajen raba ƙarfin lantarki lokacin da aka haɗa diyod da yawa a layi daya, yana hana guduwar zafi—babbar fa'ida da aka haskaka a cikin fasali.

3.2 Halayen VR-IR

Wannan lanƙwasa tana kwatanta ƙarfin yoyo na baya a matsayin aiki na ƙarfin baya da aka yi amfani da shi, kuma a yanayin zafi daban-daban. Yana taimaka wa masu ƙira su fahimci asarar wutar lantarki ta yoyo a ƙarƙashin yanayin aiki daban-daban.

3.3 Halayen VR-Ct

Wannan jadawali yana nuna capacitance na junction (Ct) akan ƙarfin baya (VR). Capacitance yana raguwa tare da ƙaruwar bias na baya (misali, daga ~513 pF a 1V zuwa ~46 pF a 400V). Wannan canjin capacitance yana shafar halayen sauyawa mai girma da ƙirar da'irori masu juyawa.

3.4 Matsakaicin Ƙarfin Gaba vs. Yanayin Zafi na Akwati

Wannan lanƙwasa rage ƙima tana nuna yadda matsakaicin ƙarfin gaba na ci gaba da aka halatta (IF) ke raguwa yayin da zafin akwati (Tc) ke ƙaruwa. Yana da mahimmanci don zaɓar mai sanyaya zafi da ya dace don tabbatar da cewa diyod yana aiki a cikin yankinsa na aiki mai aminci (SOA).

3.5 Tsayayyen Tsayayyen Zafi

Lanƙwasa na juriyar zafi na wucin gadi (ZθJC) akan faɗin bugun jini yana da mahimmanci don kimanta aikin zafi a ƙarƙashin yanayin ƙarfin lantarki mai bugun jini, wanda ya zama ruwan dare a aikace-aikacen sauyawa. Yana ba da damar lissafin matsakaicin zafin junction yayin abubuwan sauyawa.

4. Bayanin Injiniya da Kunshi

4.1 Siffar Kunshi da Ma'auni

Na'urar tana amfani da daidaitaccen kunshin TO-220-2L (leads biyu) na masana'antu. Muhimman ma'auni daga takardar bayani sun haɗa da:

• Tsawon Gabaɗaya (D): 15.6 mm (na al'ada)
• Faɗin Gabaɗaya (E): 9.99 mm (na al'ada)
• Tsayin Gabaɗaya (A): 4.5 mm (na al'ada)
• Lead Pitch (e1): 5.08 mm (BSC, Tsakanin Tsakanin Cibiyoyi)
• Ma'aunin ramin haɗawa da shimfidar fakitin da aka ba da shawarar don haɗa saman na'urar kuma an bayar, yana tabbatar da ingantaccen ƙirar PCB don aikin zafi da na lantarki.

4.2 Tsarin Ƙirƙira da Polarity

An ayyana pinout a sarari:

• Pin 1:Cathode (K)
• Pin 2:Anode (A)
• Akwati (Tab):An haɗa shi da lantarki zuwa Cathode (K). Wannan yana da mahimmanci don haɗawa daidai, saboda dole ne a keɓe tab daga mai sanyaya zafi idan mai sanyaya zafi baya cikin ƙarfin cathode.

5. Jagororin Aikace-aikace

5.1 Yanayin Aikace-aikace na Al'ada

• Gyaran Ƙarfin Lantarki (PFC) a cikin SMPS:Saurin sauyawa da ƙaramin Qc na diyod sun sa ya zama mai kyau don matakan haɓaka PFC, yana ba da damar yin sauyawa mai girma, ƙananan abubuwan maganadisu, da ingantaccen inganci.
• Masu Juyawa na Rana:Ana amfani da su a matakin haɓakawa ko azaman diyod na freewheeling, suna ba da gudummawa ga mafi girman ingancin inverter gabaɗaya da aminci.
• Na'urorin Wutar Lantarki marasa Katsewa (UPS):Yana inganta inganci a cikin sassan inverter da mai canzawa, yana rage asarar makamashi da buƙatun sanyaya.
• Tuƙin Motoci:Yana aiki azaman diyod na freewheeling ko clamping a cikin gadar inverter, yana ba da damar saurin sauyawa na IGBTs ko MOSFETs da rage ƙarfin ƙarfin lantarki.
• Na'urorin Wutar Lantarki na Cibiyar Bayanai:Tuƙin don babban inganci (misali, 80 Plus Titanium) yana sa diyod na SiC su zama masu ban sha'awa ga duka matakan PFC da DC-DC canzawa.

5.2 Abubuwan da ake la'akari da su na Ƙira

• Sanyaya Zafi:Sakamakon tab da aka haɗa da cathode, keɓewar lantarki (ta amfani da fakitin mai ɗaukar zafi amma mai keɓe lantarki) wajibi ne idan mai sanyaya zafi baya cikin ƙarfin lantarki iri ɗaya da cathode.
• Rage inductance na parasitic a cikin madauki mai ƙarfin lantarki (musamman madauki da aka kafa ta hanyar sauyawa, diyod, da capacitor) don rage ƙarfin ƙarfin lantarki yayin sauye-sauyen sauyawa.Abubuwan da ake la'akari da tuƙin Gate:
• Duk da yake diyod da kansa ba shi da ƙofa, saurin sauyawarsa na iya haifar da babban dV/dt da dI/dt a cikin da'ira, wanda zai iya shafar tuƙin MOSFETs ko IGBTs masu alaƙa. Da'irori masu dacewa na snubber ko cibiyoyin RC na iya zama dole a wasu ƙira.Aiki a Layi:
• Ingantaccen coefficient na zafi na VF yana sauƙaƙe raba ƙarfin lantarki a cikin tsararrun layi. Duk da haka, ana ba da shawarar daidaiton shimfidawa da daidaitaccen sanyaya zafi don mafi kyawun aiki.6. Kwatancen Fasaha da Fa'idodi

Idan aka kwatanta da daidaitattun diyod na silicon ultra-fast recovery ko ma diyod na silicon Schottky (waɗanda aka iyakance ga ƙananan ƙarfin lantarki, yawanci <200V), EL-SAF02065JA yana ba da fa'idodi daban-daban:

Kusan-Sifili Dawowa Baya:

• Tsarin Schottky Barrier na asali a cikin SiC yana kawar da lokacin ajiyar 'yan tsiraru da ke cikin diyod na PN junction, wanda ke haifar da cajin dawowa baya maras amfani (Qc vs. Qrr). Wannan yana rage asarar sauyawa sosai.Aiki mai Zafi:
• Faɗin bandgap na SiC yana ba da damar matsakaicin zafin junction na 175°C, wanda ya fi yawancin na'urorin silicon, yana inganta aminci a ƙarƙashin yanayin zafi mai girma.Babban Ƙimar Ƙarfin Lantarki:
• Kayan SiC suna ba da damar babban ƙarfin lantarki (650V a nan) yayin da ake kiyaye kyawawan halaye na kan-jihar, haɗin da ke da wahala a cimma tare da diyod na silicon Schottky.Fa'idodin Matakin Tsarin:
• Kamar yadda aka jera a cikin fasali, waɗannan suna fassara zuwa aiki mai girma (ƙananan abubuwan wucewa), ƙaruwar yawan wutar lantarki, ingantaccen ingancin tsarin, da yuwuwar ajiyar girman tsarin sanyaya da farashi.7. Tambayoyin da ake yawan yi (FAQs)

Q: Menene babban bambanci tsakanin Qc da Qrr?

A: Qc (Cajin Capacitive) shine cajin da ke da alaƙa da caji da cire cajin capacitance na junction na diyod na Schottky. Qrr (Cajin Dawowa Baya) shine cajin da ke da alaƙa da cire 'yan tsiraru da aka adana a cikin diyod na PN junction yayin kashewa. Qc yawanci ya fi ƙanƙanta kuma yana haifar da ƙarancin asarar sauyawa.

Q: Me yasa akwati yake haɗe da cathode?

A: Wannan tsari ne na gama gari a yawancin diyod na wutar lantarki da transistors. Yana sauƙaƙa ginin kunshi na ciki kuma yana ba da hanyar ƙarancin inductance, babban hanyar ƙarfin lantarki don haɗin cathode ta hanyar tab na haɗawa.

Q: Shin ana iya amfani da wannan diyod a cikakken ƙimar 20A ba tare da mai sanyaya zafi ba?

A: Kusan ba haka ba ne. Tare da RθJC na 2.0°C/W da VF na ~1.5V, ɓarnawar wutar lantarki a 20A zai kasance kusan 30W (P=Vf*If). Wannan zai haifar da hauhawar zafi na 60°C daga akwati zuwa junction (ΔT = P * RθJC). Ba tare da mai sanyaya zafi ba, zafin akwati zai tashi da sauri zuwa matsakaicin, ya wuce Tj,max. Ingantaccen ƙirar zafi yana da mahimmanci.

Q: Shin ana buƙatar da'irar snubber don wannan diyod?

A: Sakamakon saurin sauyawarsa da ƙarancin capacitance, ringing da parasitic na da'ira (inductance da capacitance) ke haifarwa na iya zama mafi bayyanawa. Duk da yake diyod da kansa baya buƙatar snubber, da'irar gabaɗaya na iya amfana da snubber na RC a kan diyod ko babban sauyawa don rage oscillations da rage EMI.

8. Ka'idojin Aiki

Diyod na Schottky na'urar mai ɗaukar mafi yawa ce wacce aka kafa ta hanyar haɗin karfe-semiconductor. Lokacin da aka yi amfani da ingantaccen ƙarfin lantarki akan semiconductor (anode) dangane da karfe (cathode), electrons suna gudana cikin sauƙi daga semiconductor zuwa cikin karfe, suna ba da damar gudanar da gaba tare da faɗuwar ƙarfin lantarki kaɗan (yawanci 0.3-0.5V don silicon, 1.2-1.8V don SiC). Mafi girma VF a cikin SiC saboda faɗin bandgap dinsa. A ƙarƙashin bias na baya, ƙarfin da aka gina na junction yana hana kwararar wutar lantarki, tare da ƙaramin ƙarfin yoyo kawai saboda fitowar thermionic da tunneling na quantum. Rashin allurar 'yan tsiraru da ajiya shine abin da ke kawar da al'amarin dawowa baya da ake gani a cikin diyod na PN junction.

9. Trends na Masana'antu

Na'urorin wutar lantarki na Silicon Carbide (SiC) babbar fasaha ce mai ba da dama don ci gaba da lantarki da ingantaccen inganci a fadin masana'antu da yawa. Kasuwar diyod na SiC da transistors tana girma cikin sauri, ana motsa su ta buƙatu a cikin motocin lantarki (EVs), abubuwan cajin EV, makamashin sabuntawa, da na'urorin wutar lantarki na masana'antu masu inganci. Trends sun haɗa da ƙaruwar ƙimar ƙarfin lantarki da ƙarfin lantarki, ingantaccen aminci da yawan amfanin ƙasa wanda ke haifar da ƙananan farashi, da haɗa diyod na SiC tare da MOSFETs na SiC a cikin kayan aikin wutar lantarki. Na'urar da aka kwatanta a cikin wannan takardar bayani tana wakiltar cikakkiyar kayan aiki kuma an karɓa sosai a cikin wannan babban canjin fasaha zuwa semiconductors masu faɗin bandgap.

Silicon Carbide (SiC) power devices are a key enabling technology for the ongoing electrification and efficiency improvement across multiple industries. The market for SiC diodes and transistors is growing rapidly, driven by demands in electric vehicles (EVs), EV charging infrastructure, renewable energy, and high-efficiency industrial power supplies. Trends include increasing voltage and current ratings, improved reliability and yield leading to lower costs, and the integration of SiC diodes with SiC MOSFETs in power modules. The device described in this datasheet represents a mature and widely adopted component within this broader technological shift towards wide-bandgap semiconductors.