TO-247-2L Package 650V Silicon Carbide Schottky Diode Datasheet - 10A Forward Current - 1.48V Forward Voltage - 175°C Junction Temperature - Technical Documentation

1. Product Overview

This document details the specifications of a high-performance silicon carbide Schottky barrier diode in a TO-247-2L package. The device is designed for power electronics applications demanding high efficiency, high-frequency operation, and superior thermal performance. Its core function is to provide unidirectional current conduction while exhibiting extremely low switching losses and reverse recovery charge, a significant advantage over traditional silicon PN junction diodes.

The primary positioning of this component is for application in advanced power conversion systems where efficiency and power density are critical. Its core advantages stem from the fundamental properties of silicon carbide material, enabling operation at higher temperatures, voltages, and switching frequencies than silicon-based devices. Target markets include industrial power supplies, renewable energy systems, and motor drive applications, where these characteristics translate directly into system-level benefits.

2. In-depth Technical Parameter Analysis

2.1 Absolute Maximum Ratings

Absolute maximum ratings define the stress limits that may cause permanent damage to the device. These values are not intended for normal operation.

• Repetitive peak reverse voltage:650V. This is the maximum instantaneous reverse voltage that can be applied repeatedly.
• Continuous Forward Current:10A. This is the maximum direct current that the diode can continuously conduct under the limitations of maximum junction temperature and thermal resistance.
• Non-repetitive Surge Current:30A. This rating indicates the diode's ability to withstand a single high-current overload event (10ms sine half-wave) without failure, which is crucial for handling inrush currents or fault conditions.
• Junction Temperature:175°C. The maximum allowable temperature of the semiconductor junction itself.
• Storage Temperature:-55°C to +175°C.

2.2 Electrical Characteristics

These parameters define the performance of the device under specified test conditions.

• Forward Voltage:Under the conditions of IF=10A, TJ=25°C, the typical value is 1.48V, and the maximum value is 1.85V. This low VF is a key characteristic of SiC Schottky diodes, contributing to reduced conduction losses. Please note that VF increases with temperature, reaching approximately 1.9V at TJ=175°C.
• Reverse Leakage Current:Under the conditions of VR=520V and TJ=25°C, the typical value is 2µA, and the maximum value is 60µA. The leakage current increases with rising temperature, a characteristic that must be considered in high-temperature design.
• Total capacitive charge:Under the condition of VR=400V, the typical value is 15nC. This is a key parameter for calculating switching losses. A low QC value means that the energy stored in the diode's junction capacitance is very small, and this energy must be dissipated in each switching cycle, thereby achieving the "virtually no switching loss" advantage as described.
• Energy stored in capacitor:Under the condition of VR=400V, the typical value is 2.2µJ. This is the energy stored in the diode capacitance at the specified voltage and is directly related to QC.

2.3 Thermal Characteristics

Thermal management is crucial for reliable operation and achieving rated performance.

• Junction-to-case thermal resistance:The typical value is 1.7°C/W. This low value indicates excellent heat transfer performance from the semiconductor chip to the device case, allowing heat to be efficiently removed via a heatsink attached to the case. At TC=25°C, the total power dissipation rating of 88W is derived from this parameter and the maximum junction temperature.

3. Performance Curve Analysis

The datasheet contains multiple characteristic curves that are crucial for design engineers.

3.1 VF-IF Characteristic Curve

This graph plots the relationship between forward voltage and forward current, typically at multiple junction temperatures (e.g., 25°C and 175°C). It visually demonstrates the low forward voltage drop and its positive temperature coefficient. The positive temperature coefficient is a beneficial characteristic for parallel operation, as it promotes current sharing and prevents thermal runaway.

3.2 VR-IR Characteristic Curve

This curve shows the relationship between reverse voltage and reverse leakage current, also at different temperatures. It emphasizes how the leakage current remains relatively low before approaching the breakdown region and how it increases exponentially with temperature.

3.3 VR-Ct Characteristic Curve

This figure illustrates how the total capacitance of a diode decreases with increasing reverse bias voltage. This nonlinear capacitance is a key factor in high-frequency switching behavior.

3.4 Maximum Forward Current vs. Case Temperature Relationship

This derating curve shows how the maximum allowable continuous forward current decreases with increasing case temperature. It is a key tool for determining the required heat sink performance for a specific application current.

3.5 Transient Thermal Impedance

The curve of transient thermal resistance versus pulse width is crucial for evaluating thermal performance under pulsed current conditions. It indicates that for very short pulses, the effective thermal resistance is lower than the steady-state junction-to-case thermal resistance, thereby allowing higher peak currents.

4. Mechanical and Package Information

4.1 Pin Configuration and Polarity

The device is housed in a TO-247-2L package with two pins. Pin 1 is the cathode, and pin 2 is the anode. Importantly, the metal mounting tab or case of the package is electrically connected to the cathode. This must be carefully considered during installation to prevent short circuits, as the case must be insulated from the heatsink unless the heatsink is at cathode potential.

4.2 Package Dimensions and Outline Drawing

Detailed mechanical drawings are provided, with all critical dimensions in millimeters. This includes overall length, width, height, lead pitch, lead diameter, and the dimensions of the mounting holes on the mounting pad. Adherence to these dimensions is necessary for proper PCB pad design and mechanical assembly.

4.3 Recommended PCB Land Pattern

Contains recommended pad layout for surface mounting of leads (after forming), specifying pad dimensions, shape, and spacing to ensure reliable soldering and mechanical strength.

5. Assembly and Operation Guide

5.1 Installation Torque

The specified installation torque for screws used to secure the device to a heatsink is 8.8 N·m (or equivalent lbf-in), applicable to M3 or 6-32 screws. Applying the correct torque ensures optimal thermal contact without damaging the package.

5.2 Storage Conditions

The device should be stored in a dry, non-corrosive environment within the specified storage temperature range of -55°C to +175°C. Standard ESD (Electrostatic Discharge) precautions should be observed during handling, as the Schottky barrier is sensitive to electrostatic damage.

6. Application Recommendations

6.1 Typical Application Circuit

• Power Factor Correction:Used as a boost diode in continuous conduction mode PFC circuits. Its fast switching and low QC minimize turn-off losses, allowing for higher switching frequencies, thereby reducing the size of magnetic components.
• Solar inverter:Applied in the boost stage or within the inverter bridge. High efficiency reduces power loss, and high-temperature capability improves reliability in outdoor environments.
• Motor drive:The position of the freewheeling or clamping diode in the inverter bridge used to drive the motor. The absence of reverse recovery current reduces voltage spikes and electromagnetic interference, and improves the efficiency of the drive.
• Uninterruptible Power Supply and Data Center Power:The aforementioned advantages are equally applicable in the high-density, high-efficiency power conversion stages of these systems.

6.2 Key Design Considerations

• Heat Dissipation:Due to its high power handling capability, an appropriate heat sink must be used when operating at high currents. The thermal resistance from the case to the ambient provided by the heat sink must be calculated based on the maximum ambient temperature, power dissipation, and the desired junction temperature margin.
• Device Parallel Connection:The positive temperature coefficient of VF is beneficial for current sharing when multiple diodes are connected in parallel. However, careful layout is still recommended to ensure symmetrical parasitic inductance and resistance, thereby achieving optimal current sharing.
• Snubber Circuit:Although this diode has essentially no reverse recovery, circuit parasitic inductance can still cause voltage overshoot during turn-off. In applications with extremely high di/dt, the use of a snubber circuit or careful layout may be necessary to minimize loop inductance.
• Gate Drive Considerations:The fast switching of this diode can lead to high di/dt and dv/dt, which may cause noise coupling into the gate drive circuit. Proper shielding and gate drive layout are crucial.

7. Technical Comparison and Advantages

Compared to standard silicon fast recovery diodes and even silicon carbide junction barrier Schottky diodes, this silicon carbide Schottky diode offers the following significant advantages:

• Zero reverse recovery:The Schottky barrier is a majority carrier device, eliminating the minority carrier storage time and the associated reverse recovery current and losses present in PN junction diodes. This is its most notable advantage.
• Higher Operating Temperature:Silicon Carbide material allows a maximum junction temperature of 175°C, higher than typical silicon diodes, enabling operation in harsher environments or with smaller heat sinks.
• Lower Forward Voltage Drop:A cikin yanayin aiki na yau da kullun, VF ɗinsa ya yi ƙasa da silicon fast recovery diode na matakin wutar lantarki iri ɗaya, don haka ya rage asarar kunnawa.
• Ƙarfin saurin saurin sauyawa mafi girma:Haɗin ƙaramin QC da rashin Qrr yana ba shi damar yin aiki cikin inganci a cikin mitoci mafi girma, wanda kai tsaye ke haifar da ƙaramin girman abubuwan da ba su da ƙarfi (inductors, capacitors), da ƙarfin ƙarfi mafi girma.

8. Frequently Asked Questions

8.1 What does "virtually no switching loss" specifically refer to?

It refers to negligible reverse recovery loss. Although capacitive switching loss still exists, the total switching loss is significantly reduced, typically by an order of magnitude, due to the complete absence of the much larger reverse recovery loss commonly found in silicon diodes.

8.2 Why is the case connected to the cathode?

This is a common design in power packages, aimed at simplifying internal connections and improving thermal performance. This means the heatsink must be electrically isolated from the rest of the system unless it is intentionally kept at cathode potential. Insulating spacers and thermal interface materials with high dielectric strength are required.

8.3 Yaya ake lissafin asarar wutar wannan diode?

Total power loss is the sum of conduction loss and switching loss. Conduction loss = IF(AVG) * VF. Switching loss ≈ (1/2) * C * V^2 * f (for capacitive loss), where C is the effective capacitance, V is the blocking voltage, and f is the switching frequency. The Qrr loss component is zero.

8.4 Shin za a iya maye gurbin silicon diode kai tsaye da wannan diode?

Regarding voltage and current ratings, it is generally acceptable. However, faster switching speeds may expose circuit parasitic parameters, potentially leading to higher voltage spikes. The gate drive of related switching devices (e.g., MOSFETs) may require re-evaluation for its noise immunity. Due to different loss characteristics, the thermal design should also be re-evaluated.

9. Design Application Case Study

Scenario:Upgrade the silicon ultrafast diode in a 2kW continuous conduction mode power factor correction boost stage to this silicon carbide Schottky diode. The original design operates at a frequency of 100kHz.

Analysis:The original silicon diode has a Qrr of 50nC and a VF of 1.8V. Switching losses are significant. By replacing it with this silicon carbide diode, the following improvements were achieved:

1. Switching loss reduction:Qrr loss is eliminated. Capacitive switching loss is also reduced due to lower QC.
2. Conduction loss reduction:For the same average current, the lower VF reduces conduction loss by approximately 18%.
3. Frequency scaling potential:The significant reduction in total switching loss enables designers toincrease the switching frequencyto 200-300kHz. This reduces the size and weight of the boost inductor and EMI filter components by nearly 50%, directly achieving "power density improvement".
4. Thermal Management:The total power loss of the diode is lower. Combined with its higher junction temperature rating, this can allow for a reduction in heat sink size, further saving cost and space.

Result:System full-load efficiency increases by 1-2%, power density increases, and system cost may be reduced due to smaller magnetic components and cooling systems.

10. Introduction to Working Principle

Schottky diode yana samuwa daga haɗin ƙarfe da semiconductor, wanda ya bambanta da haɗin P-N semiconductor na diode na yau da kullun. A cikin wannan Schottky diode na silicon carbide, lambar ƙarfe tana haɗuwa kai tsaye da silicon carbide na nau'in-n. Wannan yana haifar da shingen Schottky, wanda ke ba da damar kwarara na halin yanzu cikin sauƙi a cikin alkiblar gaba lokacin da ake amfani da ƙarfin lantarki mai kyau akan ƙarfe idan aka kwatanta da semiconductor.

Babban bambancin aiki yana cikin dawowar baya. A cikin diode na PN, kashe shi yana buƙatar cire ƴan ƙananan masu ɗaukar kaya da aka adana (wanda ake kira tsarin dawowar baya), wanda ke ɗaukar lokaci kuma yana haifar da ƙaramin bugun halin yanzu na baya. A cikin Schottky diode, halin yanzu yana ɗauke da mafi yawan masu ɗaukar kaya kawai (electrons a cikin silicon carbide na nau'in-n). Lokacin da ƙarfin lantarki ya koma baya, waɗannan masu ɗaukar kaya suna sharewa kusan nan take, wanda ke haifar da rashin lokacin adana ƴan ƙananan masu ɗaukar kaya, don haka ya haifar da "dawowar baya sifili". Wannan ainihin ka'idar ita ce ainihin dalilin da yasa ake samun saurin sauyawa da ƙananan asarar sauyawa.

11. Technology Development Trends

Silicon carbide power devices represent a major trend in the field of power electronics, driving the transition from traditional silicon-based devices. The market drivers are the global push for higher energy efficiency, higher power density, and the electrification of transportation and industry.

The development of silicon carbide Schottky diodes focuses on several key areas: further reducing specific on-resistance (thereby lowering VF), improving the reliability and stability of the Schottky metal-semiconductor interface at high temperatures, increasing voltage ratings to 1.2kV, 1.7kV and above to meet medium-voltage application demands, and reducing device capacitance to support switching frequencies in the MHz range. Integration is another trend, co-packaging silicon carbide Schottky diodes with silicon carbide MOSFETs into modules to create efficient, fast-switching power stages. With increasing manufacturing volumes and decreasing costs, silicon carbide technology is steadily moving from high-end applications to mainstream power conversion products.