Takardar Bayani na Diyodi na SiC Schottky TO-252-3L - 650V, 16A, 1.5V - Kunshin 6.6x9.84x1.52mm - Takardun Fasaha na Hausa

1. Bayyani Game da Samfur

Wannan takarda ta bayyana cikakkun bayanai game da diyodi mai inganci na Silicon Carbide (SiC) Schottky Barrier Diode (SBD) a cikin kunshin TO-252-3L (DPAK) mai hawa a saman. An ƙera wannan na'urar don aikace-aikacen jujjuyawar wutar lantarki mai ƙarfi da yawan mitoci, inda inganci, yawan ƙarfi, da sarrafa zafi suke da muhimmanci. Ta amfani da fasahar SiC, wannan diyodi yana ba da fa'idodi masu mahimmanci idan aka kwatanta da diyodai na gargajiya na silicon PN, musamman wajen rage asarar sauyawa da ba da damar yin aiki da mitoci mafi girma.

Matsayin ainihin wannan ɓangaren yana cikin tsarin wutar lantarki da jujjuyawar makamashi mai ci gaba. Fa'idodinsa na farko sun samo asali ne daga kaddarorin kayan Silicon Carbide, waɗanda ke ba da damar ƙarancin cajin dawowa baya da saurin sauyawa idan aka kwatanta da na silicon. Wannan kai tsaye yana haifar da raguwar asarar sauyawa a cikin da'irori, wanda ke haifar da ingantaccen tsarin tsarin gabaɗaya.

Kasuwanni da aikace-aikacen da aka yi niyya sun bambanta, suna mai da hankali kan lantarki mai inganci na zamani. Manyan sassan sun haɗa da injunan motsa jiki na masana'antu, tsarin makamashi mai sabuntawa kamar masu jujjuyawar hasken rana, wadatar wutar lantarki na uwar garken bayanai da cibiyoyin bayanai, da kuma wadatar wutar lantarki marasa katsewa (UPS). Waɗannan aikace-aikacen suna amfana sosai daga ikon diyodi na yin aiki da mitoci mafi girma, wanda ke ba da damar amfani da ƙananan kayan aiki masu zaman kansu kamar inductors da capacitors, ta haka yana ƙara yawan ƙarfi kuma yana iya rage girman tsarin da farashi.

2. Bincike Mai zurfi na Ma'auni na Fasaha

2.1 Matsakaicin Matsakaicin Matsakaici

Matsakaicin matsakaicin matsakaici yana bayyana iyakokin damuwa waɗanda za su iya haifar da lalacewa na dindindin ga na'urar. Ba a yi niyya don aikin al'ada ba.

• Matsakaicin Ƙarfin Juyawa Maimaitawa (VRRM):650V. Wannan shine matsakaicin ƙarfin juyawa da za a iya amfani da shi akai-akai.
• Halitta Ci Gaba na Gaba (IF):16A. Wannan shine matsakaicin ci gaba na gaba wanda diyodi zai iya ɗauka, wanda aka iyakance ta matsakaicin zafin haɗin gwiwa da juriyar zafi.
• Ƙarfin Gaba Maimaitawa Ba Maimaitawa (IFSM):27A. Wannan ƙimar tana ƙayyadad da matsakaicin ƙarfin igiyar ruwa da za a iya yarda da shi na ɗan gajeren lokaci (10ms, rabin igiyar sine), mai mahimmanci don sarrafa yanayin shiga ko kuskure.
• Zafin Haɗin gwiwa (TJ):175°C. Matsakaicin zafin jiki da za a iya yarda da shi na haɗin gwiwar semiconductor.
• Yawan Ragewar Wutar lantarki (PD):70W. Matsakaicin wutar lantarki da kunshin zai iya watsawa a zafin akwati na 25°C.

2.2 Halayen Lantarki

Waɗannan ma'auni suna bayyana aikin na'urar a ƙarƙashin ƙayyadaddun yanayin gwaji.

• Ƙarfin Gaba (VF):Yawanci 1.5V a 16A da zafin haɗin gwiwa 25°C, tare da matsakaicin 1.85V. Wannan ƙaramin VF fa'ida ce mahimmanci ta fasahar SiC Schottky, wanda ke haifar da ƙarancin asarar gudanarwa. Lura cewa VF yana ƙaruwa da zafin jiki, yana kaiwa kusan 1.9V a 175°C.
• Halitta Juyawa (IR):Yawanci 2µA a 520V da 25°C, tare da matsakaicin 60µA. Wannan ƙaramin halin yanzu na ɓarna yana ba da gudummawa ga inganci a cikin yanayin toshewa.
• Jimlar Cajin Capacitive (QC):22 nC (na al'ada) a 400V. Wannan ma'auni ne mai mahimmanci don lissafin asarar sauyawa. Ƙimar QC ƙaramar tana nuna ƙaramin cajin da aka adana wanda ake buƙatar cirewa yayin kashewa, wanda ke haifar da kusan babu halin yanzu na dawowa baya kuma ƙananan asarar sauyawa.
• Jimlar Capacitance (Ct):Wannan ya dogara da ƙarfin lantarki. Yana auna 402 pF a 1V, 43 pF a 200V, da 32 pF a 400V (na al'ada, a 1MHz). Ragewa tare da ƙara ƙarfin juyawa halayyar capacitance ne na haɗin gwiwa.

2.3 Halayen Thermal

Gudanar da zafi yana da mahimmanci ga aminci da aiki.

• Juriyar Thermal, Haɗin gwiwa-zuwa-Akwati (RθJC):2.9 °C/W (na al'ada). Wannan ƙaramin ƙimar yana nuna ingantaccen canja wurin zafi daga haɗin gwiwar semiconductor zuwa akwatin kunshin, wanda ke da mahimmanci don watsar da zafin da aka samar zuwa heatsink ko PCB.

3. Bincike na Lanƙwasa Aiki

Takardar bayani tana ba da lanƙwasa halaye da yawa masu mahimmanci don ƙira.

3.1 Halayen VF-IF

Wannan jadawali yana nuna alaƙar tsakanin ƙarfin gaba da halin yanzu na gaba a daban-daban zafin haɗin gwiwa. Yana nuna a zahiri ƙarancin faɗuwar ƙarfin gaba da ƙimar zafinsa mai kyau. Masu ƙira suna amfani da wannan don ƙididdige asarar gudanarwa (Pcond = VF * IF) da fahimtar yadda asara ke canzawa da zafin jiki.

3.2 Halayen VR-IR

Wannan lanƙwasa yana zana halin yanzu na ɓarna na baya akan ƙarfin juyawa a yanayin zafi daban-daban. Yana tabbatar da ƙarancin halin yanzu na ɓarna ko da a manyan ƙarfin lantarki da ɗumbin yanayin zafi, wanda ke da mahimmanci ga inganci a yanayin toshewa.

3.3 Matsakaicin Halin yanzu na Gaba vs. Zafin Akwati

Wannan lanƙwasa rage ƙimar yana nuna yadda matsakaicin halin yanzu na gaba da za a iya ci gaba da raguwa yayin da zafin akwati (TC) ya ƙaru. Kayan aiki ne mai mahimmanci don ƙirar thermal, yana tabbatar da cewa ba a aiki diyodi fiye da yankinsa na aiki mai aminci (SOA).

3.4 Ragewar Wutar lantarki vs. Zafin Akwati

Kamar da rage ƙimar halin yanzu, wannan lanƙwasa yana nuna matsakaicin wutar lantarki da za a iya watsawa a matsayin aikin zafin akwati.

3.5 Tsangwama Thermal Impedance

Wannan jadawali yana da mahimmanci don kimanta aikin thermal yayin ɗan gajeren bugun jini na wutar lantarki. Yana nuna ingantaccen juriyar zafi daga haɗin gwiwa zuwa akwati don bugun jini guda ɗaya na faɗi daban-daban. Ana amfani da wannan bayanin don ƙididdige hawan zafin haɗin gwiwa yayin abubuwan sauyawa, wanda sau da yawa yana da damuwa fiye da yanayin kwanciyar hankali.

4. Bayanin Injiniya da Kunshi

4.1 Girman Kunshi (TO-252-3L)

An saka diyodi a cikin kunshin TO-252-3L, wanda kuma aka sani da DPAK. Manyan girmansun sun haɗa da:

• Tsawon Kunshi (E): 6.60 mm (typ)
• Faɗin Kunshi (D): 6.10 mm (typ)
• Tsayin Kunshi (H): 9.84 mm (typ)
• Pitch Jagora (e1): 2.28 mm (asali)
• Tsawon Jagora (L): 1.52 mm (typ)

Cikakken zane yana ba da duk mahimmanan juriya don ƙirar sawun PCB da haɗawa.

4.2 Saitin Fil da Polarity

Kunshin yana da haɗin gwiwa uku: jagorori biyu da akwati (tab).

• Fil 1: Cathode (K)
• Fil 2: Anode (A)
• Akwati (Tab): Wannan an haɗa shi a ciki zuwa Cathode (K). Wannan cikakken bayani ne mai mahimmanci don shimfidar PCB da heatsinking, saboda dole ne a keɓe tab daga wasu da'irori idan ba su kasance a ƙarfin cathode ba.

4.3 Shimfidar PCB Pad da aka ba da shawarar

An ba da shawarar sawun ƙafa don haɗin hawa a saman. An ƙera wannan shimfidar don tabbatar da samar da haɗin gwiwar solder mai aminci, taimakon zafi mai dacewa, da ingantaccen watsar zafi zuwa tagulla na PCB. Yin bin wannan shawarar yana da mahimmanci don yawan samarwa da amincin dogon lokaci.

5. Jagororin Aikace-aikace da Abubuwan Ƙira

5.1 Da'irori na Aikace-aikacen Al'ada

Wannan diyodi na SiC Schottky ya dace da kyau don wasu manyan nau'ikan jujjuyawar wutar lantarki:

• Gyaran Factor na Wutar lantarki (PFC):Ana amfani dashi a matakin na'urar jujjuyawar wutar lantarki (SMPS). Saurin sauyawarsa yana rage asara a manyan mitoci, yana inganta ingancin matakin PFC.
• Matakin DC-AC na Inverter na Rana:Sau da yawa ana amfani da shi a cikin da'irori masu 'yanci ko matse na inverter. Babban ƙimar ƙarfin lantarki da ƙananan asarar sauyawa suna da amfani ga manyan ƙarfin lantarki na DC da mitocin sauyawa da aka saba a aikace-aikacen hasken rana.
• Masu Jujjuyawar Mota:Yana aiki azaman diyodi mai 'yanci a kan Insulated-Gate Bipolar Transistors (IGBTs) ko MOSFETs. Dawowa cikin sauri yana rage buƙatun lokacin mutuwa da rage ƙarfin ƙarfin lantarki.
• Wadatar Wutar lantarki marasa Katsewa (UPS) da Wadatar Wutar lantarki na Cibiyar Bayanai:Ana amfani da su a cikin matakan PFC da DC-DC don cimma inganci, wanda ke da mahimmanci don rage amfani da makamashi da buƙatun sanyaya.

5.2 Manyan Abubuwan Ƙira

• Gudanar da Thermal:Duk da ƙananan asararsa, ingantaccen heatsinking yana da mahimmanci. Ƙaramin RθJC yana ba da damar canja wurin zafi yadda ya kamata zuwa PCB ko heatsink na waje. Dole ne a siyar da tab ɗin hawa (cathode) zuwa wani yanki na tagulla mai isasshen girma akan PCB don yin aiki azaman heatsink. Don aikace-aikacen wutar lantarki mai ƙarfi, heatsink na waje da aka haɗa zuwa tab na iya zama dole.
• Na'urori Masu Kama:Diyodai na SiC Schottky suna da ingantaccen ƙimar zafi don ƙarfin gaba. Wannan halayen yana haɓaka raba halin yanzu tsakanin na'urori masu kama, yana taimakawa wajen hana guduwar thermal—fa'ida mai mahimmanci idan aka kwatanta da wasu fasahohin diyodi.
• Saurin Sauyawa da Tsari:Ƙarfin sauyawa na diyodi yana nufin tsarin da'ira yana da mahimmanci. Rage inductance parasitic a cikin madauki na wutar lantarki yana da mahimmanci don guje wa wuce gona da iri na ƙarfin lantarki yayin kashewa. Wannan ya haɗa da amfani da gajerun alamomi masu faɗi da sanya capacitors ɓarna yadda ya kamata.
• Abubuwan Gudanar da Ƙofar (don maɓallan sauyawa masu alaƙa):Rashin halin yanzu na dawowa baya yana sauƙaƙa ƙirar da'irori na tuƙi na ƙofar don transistors masu sauyawa (misali, MOSFETs, IGBTs), saboda babu damuwa game da halin yanzu da aka haifar da dawowar diyodi.

6. Kwatancen Fasaha da Fa'idodi

Idan aka kwatanta da daidaitattun diyodai na dawowa cikin sauri na silicon (FRDs) ko ma diyodai na Silicon Carbide junction barrier Schottky (JBS), wannan ɓangaren yana ba da fa'idodi daban-daban:

• vs. Diyodai na Silicon PN:Babban bambanci shine kusan sifili cajin dawowa baya (Qrr), wanda a zahiri an maye gurbinsa da cajin capacitive (Qc). Wannan yana kawar da asarar dawowa baya da EMI mai alaƙa, yana ba da damar yin aiki da mitocin sauyawa mafi girma (kwatankwacin kHz).
• vs. Diyodai na Silicon Schottky:Diyodai na Silicon Schottky suna iyakance ga ƙananan ƙimar ƙarfin lantarki (yawanci ƙasa da 200V). Wannan diyodi na SiC yana faɗaɗa fa'idodin ƙa'idar gyara Schottky (ƙaramin VF, saurin sauyawa) zuwa ajin 650V, wanda ke da ma'auni don yawancin aikace-aikacen wutar lantarki na kashe wuta.
• Aiki mai Zafi:Kayan SiC na iya aiki a manyan yanayin zafi na haɗin gwiwa fiye da silicon, yana haɓaka aminci a cikin mawuyacin yanayi.
• Fa'idodin Matakin Tsarin:Ba da damar yin aiki da manyan mitocin sauyawa yana ba da damar rage girman abubuwan maganadisu (inductors, transformers) da capacitors, wanda ke haifar da ƙarin wadatar wutar lantarki mai ƙarfi da sauƙi. Ingantaccen inganci yana rage samar da zafi, wanda zai iya sauƙaƙa ko kawar da tsarin sanyaya, yana ƙara rage farashi da girman.

7. Tambayoyin da ake yawan yi (FAQs)

7.1 Me ake nufi da "kusan babu asarar sauyawa"?

Ba kamar diyodai na silicon PN waɗanda ke adana ƙananan masu ɗaukar kaya waɗanda dole ne a cire su yayin kashewa (sun haifar da babban halin yanzu na dawowa baya da babban asara), diyodai na SiC Schottky na'urori ne masu ɗaukar mafi yawa. Halayensu na kashewa yana mamaye fitar da ƙarfin haɗin gwiwa (Qc). Makamashin da aka rasa yana da alaƙa da caji da fitar da wannan ƙarfin (E = 1/2 * C * V^2), wanda yawanci ya fi ƙasa da asarar dawowa baya na diyodi na silicon daidai.

7.2 Me yasa ƙimar zafin ƙarfin gaba ta kasance mai kyau?

A cikin diyodai na Schottky, ƙarfin gaba yana raguwa kaɗan da zafin jiki don wani halin yanzu saboda raguwar tsayin shingen Schottky. Duk da haka, babban tasiri a cikin manyan diyodai na SiC Schottky shine haɓakar juriya na yankin drift tare da zafin jiki. Wannan haɓakar juriya yana haifar da ƙarfin gaba gabaɗaya yana tashi yayin da zafin jiki ya ƙaru, yana ba da ingantaccen ƙimar zafi mai kyau don raba halin yanzu.

7.3 Ta yaya zan iya ƙididdige zafin haɗin gwiwa a aikace-aikacena?

Ana iya kimanta zafin haɗin gwiwa na kwanciyar hankali ta amfani da: TJ = TC + (PD * RθJC). Inda TC shine aunannen zafin akwati, PD shine wutar lantarki da aka watsar a cikin diyodi (asarar gudanarwa + asarar sauyawa), kuma RθJC shine juriyar zafi. Don yanayin motsi, dole ne a yi amfani da lanƙwasa juriyar zafi na wucin gadi tare da siffar watsar wutar lantarki.

7.4 Shin zan iya amfani da wannan diyodi don gyara AC 400V?

Don gyara ƙarfin lantarki na layin AC 400V, matsakaicin ƙarfin juyawa na iya kaiwa kusan ~565V (400V * √2). Diyodi mai ƙimar 650V yana ba da gefen aminci don ƙarfin ƙarfin lantarki da wuce gona da iri akan layin, yana mai da shi zaɓi mai dacewa kuma na kowa don irin waɗannan aikace-aikace, gami da tsarin 400VAC mai matakai uku.

8. Misalin Ƙira na Aiki

Yanayi:Ƙirar matakin Gyaran Factor na Wutar lantarki (PFC) na 1.5kW don wadatar wutar lantarki na uwar garken, da nufin kewayon shigar da ƙarfin lantarki na 85-265VAC da fitarwa na 400VDC. An saita mitar sauyawa zuwa 100 kHz don rage girman maganadisu.

Dalilin Zaɓin Diyodi:Daidaitaccen diyodi na silicon ultrafast zai sami babban asarar dawowa baya a 100 kHz, yana yin tasiri mai ƙarfi akan inganci. An zaɓi wannan diyodi na SiC Schottky 650V saboda asarar sauyawarsa ba su da mahimmanci (dangane da Qc), kuma asarar gudanarwarsa (dangane da VF) ƙanƙanta ne. Ƙimar halin yanzu na ci gaba na 16A ya isa ga matsakaicin halin yanzu da halin yanzu na RMS a cikin wannan aikace-aikace tare da rage ƙimar da ya dace.

Ƙirar Thermal:Lissafin sun nuna asarar gudanar da diyodi kusan 4W. Ta amfani da RθJC na al'ada na 2.9°C/W, idan an kiyaye zafin akwati a 80°C, hawan zafin haɗin gwiwa zai kasance ~11.6°C, yana haifar da TJ na ~91.6°C, wanda yake cikin matsakaicin 175°C. Wannan yana ba da damar amfani da pad ɗin tagulla na PCB a matsayin heatsink na farko ba tare da buƙatar heatsink na waje mai girma ba, yana adana sarari da farashi.

9. Gabatarwar Fasaha da Trends

9.1 Ka'idar Fasahar Silicon Carbide (SiC)

Silicon Carbide wani abu ne na semiconductor mai faɗin bandeji. Faɗin bandejinsa mafi faɗi (kusan 3.26 eV don 4H-SiC vs. 1.12 eV don Si) yana ba shi wasu mafi girman kaddarorin jiki: mafi girman filin lantarki mai mahimmanci (yana ba da damar yin sirara, ƙananan juriya drift yadudduka don wani ƙimar ƙarfin lantarki), mafi girma thermal conductivity (inganta watsar zafi), da ikon yin aiki a manyan yanayin zafi. A cikin diyodai na Schottky, SiC yana ba da damar haɗuwa da babban ƙarfin lantarki, ƙarancin faɗuwar ƙarfin gaba, da saurin sauyawa sosai—haɗin da ke da wahala a cimma tare da silicon.

9.2 Trends na Masana'antu

Ɗaukar na'urorin wutar lantarki na SiC, gami da diyodai na Schottky da MOSFETs, yana ƙaruwa da sauri. Manyan masu tuƙi su ne ƙoƙarin duniya don ingantaccen amfani da makamashi a ko'ina cikin sassa (masana'antu, mota, mabukaci) da buƙatar mafi girman yawan ƙarfi. Yayin da yawan samarwa ya ƙaru kuma farashin ya ci gaba da raguwa, SiC yana motsawa daga aikace-aikacen ƙwarewa, manyan ayyuka zuwa manyan wadatar wutar lantarki, masu cajin motoci na lantarki, da tsarin makamashin hasken rana. Trend yana zuwa ga manyan ƙimar ƙarfin lantarki (misali, 1200V, 1700V) don tuƙin motoci da masana'antu, da haɗa diyodai na SiC tare da MOSFETs na SiC a cikin kayan aikin wutar lantarki don cikakkun sel masu sauyawa masu inganci.