Bayanin Fasaha na SiC Schottky Diode TO-252-3L - Girman Kunshin 6.6x9.84x2.3mm - Ƙarfin Wutar Lantarki 650V - Halin Yanzu 4A

1. Bayanin Samfur

Wannan takarda ta yi cikakken bayani game da ƙayyadaddun bayanai na babban aikin Silicon Carbide (SiC) Schottky Barrier Diode (SBD) a cikin kunshin TO-252-3L na saman-mount, wanda aka fi sani da DPAK. An ƙera na'urar don aikace-aikacen canza wutar lantarki mai ƙarfi, mita mai yawa, da ingantacciyar inganci. Babban fa'idarsa ta ta'allaka ne akan ainihin kaddarorin kayan SiC, waɗanda ke ba da damar mafi girman aikin sauyawa da kwanciyar hankali na thermal idan aka kwatanta da diodes na tushen silicon na gargajiya.

Manyan kasuwannin da aka yi niyya don wannan ɓangaren sun haɗa da ƙirar wadatar wutar lantarki na zamani, tsarin makamashi mai sabuntawa kamar masu jujjuyawar hasken rana, da'irori na tuƙi na mota, da kayan aikin wutar lantarki na cibiyar bayanai. An keɓance shi musamman don aikace-aikacen da ke buƙatar ƙarancin asarar sauyawa da yawan ƙarfin wutar lantarki.

2. Bincike Mai Zurfi na Ma'auni na Fasaha

2.1 Matsakaicin Matsakaicin Matsayi

An ƙididdige na'urar don madaidaicin ƙarfin lantarki na baya (VRRM) na 650V, tare da daidaitaccen ƙarfin lantarki na DC (VR). Matsakaicin ci gaba da halin yanzu na gaba (IF) shine 4A, an iyakance shi ta hanyar la'akari da zafi. Babban ma'auni na ƙarfi shine halin yanzu na guguwa mara maimaitawa (IFSM) na 12A na bugun jini na rabin sine na 10ms, yana nuna ikonsa na sarrafa yanayin gajeriyar kewayawa ko shigar da halin yanzu. Matsakaicin yanayin zafi na junction (TJ) shine 175°C, yana ayyana iyakar aiki ta sama.

2.2 Halayen Lantarki

Ƙarfin lantarki na gaba (VF) shine ma'auni mai mahimmanci ga asarar gudanarwa. A cikin ƙayyadaddun halin yanzu na 4A da yanayin zafi na junction na 25°C, VF na yau da kullun shine 1.4V, tare da matsakaicin 1.75V. Wannan ƙaramin ƙima yana ba da gudummawa kai tsaye ga ingantaccen tsarin tsarin. Halin yanzu na baya (IR) yana da ƙasa sosai, yawanci 1µA a 520V da 25°C, yana rage raguwar wutar lantarki a yanayin kashewa.

Siffar da ke bayyana diodes na SiC Schottky shine rashin cajin dawowa baya, kamar yadda aka nuna ta hanyar da'awar "Zero Reverse Recovery Current". Maimakon haka, halayen sauyawa ana siffanta shi da caji na capacitive. An ƙayyade jimlar cajin capacitive (QC) a matsayin 6.4nC a 400V. Wannan ma'auni, tare da jimlar capacitance (Ct) wanda ke raguwa tare da ƙara ƙarfin lantarki na baya (misali, 12pF a 200V, 10pF a 400V), yana da mahimmanci don ƙididdige asarar sauyawa na capacitive a cikin da'irori masu yawan mita.

2.3 Halayen Zafi

Juriya na thermal daga junction zuwa akwati (RθJC) shine 5.9°C/W (na al'ada). Wannan ƙaramin ƙima yana da mahimmanci don ingantaccen canja wurin zafi daga mutuwar semiconductor zuwa PCB ko heatsink. Matsakaicin jimlar raguwar wutar lantarki (PD) shine 25W, amma iyakoki na zahiri an ƙaddara su ta hanyar sarrafa zafi na aikace-aikacen da yanayin muhalli.

3. Bincike na Lankwasa Ayyuka

Bayanin bayanin ya haɗa da jadawalin ayyuka na yau da kullun waɗanda ke da mahimmanci ga injiniyoyin ƙira.

3.1 Halayen VF-IF

Wannan jadawalin yana nuna alaƙar tsakanin ƙarfin lantarki na gaba da halin yanzu na gaba a yanayin zafi daban-daban na junction. Yana nuna yadda VF yake da ƙimar zafi mara kyau, yana raguwa kaɗan yayin da yanayin zafi ya ƙaru, wanda shine halayen diodes na Schottky.

3.2 Halayen VR-IR

Wannan lankwasa tana nuna halin yanzu na baya akan ƙarfin lantarki na baya, yawanci tana nuna haɓakar IR tare da ƙara ƙarfin lantarki da zafi, yana nuna mahimmancin rage ƙarfin lantarki a yanayin zafi mai girma.

3.3 Matsakaicin Halin Yanzu na Gaba vs. Yanayin Zafi na Akwati

Wannan lankwasa mai raguwa yana da mahimmanci don ƙayyade matsakaicin halin yanzu da aka yarda da shi bisa ga yanayin aiki na akwati (TC). Yana tabbatar da cewa yanayin zafi na junction bai wuce matsakaicin ƙimar sa ba.

3.4 Ragewar Ƙarfi vs. Yanayin Zafi na Akwati

Kamar yadda ake rage halin yanzu, wannan jadawalin yana nuna yadda matsakaicin raguwar wutar lantarki ke raguwa yayin da yanayin zafi na akwati ya tashi.

3.5 Tsangwama na Thermal Impedance

Wannan jadawalin yana da mahimmanci don kimanta martanin zafi na diode ga gajerun bugun jini na wutar lantarki. Yana nuna ingantaccen juriya na thermal daga junction zuwa akwati a matsayin aikin faɗin bugun jini, yana ba da damar daidaitaccen lissafin matsakaicin yanayin zafi na junction yayin abubuwan sauyawa.

4. Bayanin Injiniya da Kunshi

4.1 Tsarin Kunshi da Girma

Na'urar tana amfani da kunshin TO-252-3L (DPAK). Manyan girma sun haɗa da tsayin duka na kunshi (H) na 9.84mm (typ), tsayi (E) na 6.60mm (typ), da faɗi (D) na 6.10mm (typ). Tsarin gubar (e) shine 2.28mm (asali). An ba da cikakkun zane-zane na injiniya tare da mafi ƙanƙanta, na al'ada, da matsakaicin ƙima don duk mahimman girma don tabbatar da ingantaccen ƙirar ƙafar PCB da kuma sharewar taro.

4.2 Tsarin Fil da Polarity

An ayyana pinout a sarari: Fil 1 shine Cathode, Fil 2 shine Anode, kuma tab ɗin karfe (Case) yana haɗe da Cathode. Daidaitaccen ganewar polarity yana da mahimmanci don hana gazawar na'urar yayin shigarwa.

4.3 Shawarar Tsarin PCB Pad

An haɗa da shawarar tsarin pad na saman-mount don inganta amincin haɗin gwiwar solder da aikin thermal. Bin wannan tsarin yana taimakawa wajen cimma ingantattun fillets na solder da ingantaccen zafi ta hanyar bayyanannen tab ɗin karfe.

5. Jagororin Solder da Taro

Duk da yake ba a yi cikakken bayani game da bayanan martani a cikin abin da aka cire ba, yakamata a bi ka'idojin IPC/JEDEC na taron saman-mount na abubuwan da ba su da gubar. An ƙayyade na'urar a matsayin mara gubar da Halogen Free, mai bin umarnin RoHS. Dole ne a yi taka tsantsan yayin sarrafawa don guje wa damuwa na injiniya akan jagororin. Ya kamata a adana shi a cikin yanayi mai bushewa, mai sarrafawa don hana ɗaukar danshi, wanda zai iya haifar da "popcorning" yayin solder na reflow.

6. Shawarwari na Aikace-aikace

6.1 Daidaitattun Da'irori na Aikace-aikace

Wannan diode ya dace da amfani da shi azaman diode mai haɓakawa a cikin matakan Gyara Factor Factor (PFC), diode mai kyauta a cikin da'irori na gada, da madadin fitarwa a cikin masu canza AC/DC ko DC/DC masu yawan mita. Ƙarfinsa na saurin sauyawa ya sa ya zama mai kyau ga da'irori masu aiki a cikin kewayon dubunnan zuwa ɗaruruwan kilohertz.

6.2 Abubuwan Ɗauka na Zane

• Asarar Sauyawa:Duk da yake asarar dawowa baya ba ta da mahimmanci, asarar sauyawa na capacitive (daidai da QC * V^2 * f) ta zama mahimmanci a cikin manyan mitoci da ƙarfin lantarki. Dole ne a ƙididdige wannan.
• Gudanar da Thermal:Ƙananan RθJC yana ba da damar ingantaccen canja wurin zafi. Babban yanki na tagulla akan PCB da ke haɗe da shafin cathode yana da mahimmanci don zama heatsink. Za a iya amfani da Thermal vias don canja wurin zafi zuwa ciki ko ƙananan yadudduka.
• Na'urori Masu Kama da Juna:Kyakkyawan ƙimar zafi na VF yana sauƙaƙe raba halin yanzu lokacin da aka haɗa diodes da yawa a layi daya, yana rage haɗarin guduwar thermal.
• Ƙarfin Lantarki:A cikin da'irori masu sauyawa na inductive, ana buƙatar ingantaccen ƙirar snubber ko tsari mai kyau don sarrafa ƙarfin lantarki da hana wuce gona da iri na ƙimar VRRM.

7. Kwatancen Fasaha da Fa'idodi

Idan aka kwatanta da silicon PN junction saurin dawowa diodes (FRDs) ko ma silicon Schottky diodes, wannan SiC Schottky diode yana ba da fa'idodi daban-daban:

• Zero Reverse Recovery:Yana kawar da babban tushen asarar sauyawa da EMI a cikin silicon FRDs, yana ba da damar mafi girman inganci da mita.
• Matsakaicin Yanayin Zafi na Aiki:TJ,max na 175°C idan aka kwatanta da yawanci 150°C don yawancin na'urorin silicon, yana ba da damar ƙirar ƙira ko mafi girman yanayin aiki na yanayi.
• Matsakaicin Ƙimar Ƙarfin Lantarki:Silicon Schottky diodes yawanci ana iyakance su zuwa ƙasa da 200V. Wannan ƙimar 650V tana buɗe amfani a cikin manyan wadatar wutar lantarki na kashe layi.
• Ƙarancin Ƙarfin Lantarki na Gaba a Yanayin Zafi Mai Girma:VF na diodes na SiC Schottky yana kasancewa daidai ko ma yana raguwa tare da yanayin zafi, ba kamar diodes na silicon inda yake ƙaruwa ba, yana haifar da mafi kyawun aiki a ƙarƙashin yanayi mai zafi.

8. Tambayoyin da ake yawan yi (FAQs)

Q: Menene ma'anar "Zero Reverse Recovery Current" a aikace?

A: Yana nufin lokacin da diode ya canza daga gudanarwa zuwa toshewa, babu cajin 'yan tsiraru da aka adana da ake buƙatar cirewa (dawowa). Halin yanzu yana tsayawa kusan nan take, yana kawar da ƙarfin halin yanzu na dawowa baya da kuma asarar wutar lantarki da ake gani a cikin diodes na PN na yau da kullun.

Q: Ta yaya zan iya ƙididdige asarar sauyawa don wannan diode?

A: Ga wannan na'urar mai sauyawa ta capacitive, babban asarar motsa jiki shine makamashin da ake buƙata don cajin capacitance ɗin haɗin gwiwa kowane zagayowar. Asarar kowane zagayowar za a iya kiyasta shi azaman 0.5 * C(VR) * VR^2, inda C(VR) shine capacitance mai dogaro da ƙarfin lantarki. Ninka ta hanyar sauyawa mita (f) don samun asarar wutar lantarki: P_sw ≈ 0.5 * C(VR) * VR^2 * f. Ma'aunin QC yana ba da wata hanyar don ƙididdige asara.

Q: Zan iya amfani da wannan diode don maye gurbin diode mai sauri na silicon kai tsaye?

A: A lantarki, a yawancin lokuta, i, kuma zai iya inganta inganci. Koyaya, dole ne ku tabbatar da tsari da ƙirar thermal sun isa, saboda halayen sauyawa (capacitive vs. dawowa) ya bambanta kuma yana iya shafar ƙararrawar ƙarfin lantarki. Hakanan, tabbatar da tuƙin ƙofar don kowane transistor mai sauyawa da ke da alaƙa yana da ƙarfi sosai don sarrafa yuwuwar daban-daban na sauyawa.

Q: Me ya sa ƙimar halin yanzu na guguwa ke da mahimmanci?

A: Yana nuna ikon diode na jure wa yanayin kuskure da ba a zata ba, kamar halin yanzu na farko lokacin cajin babban capacitor a lokacin kunna wutar lantarki, ko wani lamari na ɗan gajeren lokaci. Wannan yana ƙara wani yanki na ƙarfi ga ƙira.

9. Nazarin Zane da Amfani

Yanayi: Zane na 1kW Totem-Pole PFC Stage.

A cikin da'irar PFC na totem-pole mara gada na zamani da ke aiki a 100kHz, diode na haɓakawa na silicon na gargajiya shine babban tushen asara. Maye gurbinsa da wannan 650V SiC Schottky diode zai haifar da fa'idodi masu mahimmanci. Dawowar sifili yana kawar da asarar kunna a cikin MOSFET mai dacewa wanda ke faruwa lokacin da aka canza halin yanzu na dawowa na diode. Wannan yana ba da damar yin aiki mafi girma mita, yana rage girman abubuwan maganadisu (inductor). Ƙarancin ƙarfin lantarki na gaba yana rage asarar gudanarwa. Dole ne mai zane ya yi lissafi da kyau game da asarar kashewa na capacitive na diode na SiC a 400V DC bus voltage da 100kHz don tabbatar da cewa an yarda da shi, kuma ya ƙera PCB tare da babban, mai kauri na tagulla da ke haɗe da shafin diode don sarrafa kusan 3-4W na ƙiyasin asarar gudanarwa.

10. Ka'idar Aiki

An kafa diode na Schottky ta hanyar haɗin gwiwar karfe-semiconductor, maimakon haɗin gwiwar PN semiconductor. Wannan haɗin gwiwar karfe-SiC yana haifar da shingen Schottky wanda ke ba da damar gudanar da mafi yawan masu ɗaukar kaya kawai (electrons a cikin N-type SiC substrate). Lokacin da aka yi bambanci gaba, electrons suna da isasshen makamashi don ketare shinge, yana ba da damar gudanar da halin yanzu. Lokacin da aka yi bambanci baya, shinge yana faɗaɗa, yana toshe halin yanzu. Rashin allurar 'yan tsiraru da adanawa shine ainihin dalilin na saurin sauyawa da rashin dawowa baya. Faɗin bandgap na Silicon Carbide yana ba kayan tare da babban ƙarfin filin lantarki mai mahimmanci, yana ba da damar yadudduka masu laushi don haka ƙananan juriya da capacitance don ƙayyadaddun ƙarfin lantarki idan aka kwatanta da silicon.

11. Trends na Fasaha

Na'urorin wutar lantarki na Silicon Carbide sune babbar fasaha mai ba da dama don juyin halitta zuwa mafi inganci da ƙananan kayan aikin lantarki. Trends sun haɗa da ƙara ƙimar ƙarfin lantarki (zuwa 1.2kV da 1.7kV don tuƙi na mota da masana'antu), mafi girman yawan halin yanzu a cikin ƙananan fakitin, da haɗin diodes na SiC Schottky tare da SiC MOSFETs a cikin modules masu haɗin gwiwa. Yayin da yawan masana'antu ke ƙaruwa da farashin ya ragu, SiC yana motsawa daga aikace-aikacen musamman zuwa manyan wadatar wutar lantarki na mabukaci, masana'antu, da motoci, wanda aka motsa ta buƙatun duniya don ingantaccen amfani da makamashi da lantarki. Ci gaban ya mayar da hankali kan inganta ingancin wafer, rage yawan lahani, da inganta tsarin na'urar don ƙara rage takamaiman juriya da capacitance.