LTE-3223L-062A Infrared Emitter Datasheet - 5.0mm Package - Peak Wavelength 940nm - 2A High Current Pulse - Clear Package - Simplified Chinese Technical Documentation

1. Product Overview

LTE-3223L-062A is a high-performance infrared light-emitting diode, specifically designed for applications requiring robust optical output and reliable operation under demanding electrical conditions. This device is engineered to deliver high radiant intensity while maintaining a low forward voltage, enabling efficient performance in both continuous and pulsed drive schemes. Its primary function is to emit infrared radiation with a peak wavelength of 940 nanometers, a wavelength widely used in remote control systems, proximity sensors, photoelectric switches, and various industrial sensing applications. The emitter features a transparent package that maximizes light output and provides a broad radiation pattern.

1.1 Core Advantages and Target Market

The key advantages of this infrared emitter stem from its optimized design for high-current operation. It is particularly suitable for application scenarios requiring high instantaneous optical power, such as long-distance infrared data transmission or high-sensitivity detection systems. Its ability to withstand large pulse currents enables the generation of very bright, short-duration light pulses, thereby improving the signal-to-noise ratio in sensing applications. The wide viewing angle ensures a broad and uniform radiation field, beneficial for area illumination or sensors with less stringent alignment requirements. The transparent package eliminates the filtering effect of colored resin, resulting in higher overall radiant efficiency. Target markets include consumer electronics, industrial automation, security systems, and communication equipment.

2. In-depth Technical Parameter Analysis

This section provides a detailed and objective interpretation of the electrical and optical parameters listed in the datasheet, explaining their significance for circuit design and application performance.

2.1 Absolute Maximum Ratings

Absolute maximum ratings define the stress limits that may cause permanent damage to the device. These are not normal operating conditions but are crucial for understanding the device's robustness during assembly or under fault conditions.

• Power Dissipation (150 mW):This is the maximum thermal power the package can dissipate at an ambient temperature of 25°C. Exceeding this limit risks overheating, which may lead to accelerated aging of the semiconductor junction or catastrophic failure. Designers must ensure the product of operating forward current and voltage does not exceed this value and consider derating at higher ambient temperatures.
• Peak Forward Current (2 A @ 300pps, 10µs pulse):This rating highlights the device's capability in high-pulse operating modes. It can withstand extremely high current pulses of very short duration at moderate pulse repetition frequencies. This is crucial for applications like infrared remote controls, which use brief, high-power pulses to transmit codes.
• Continuous Forward Current (100 mA):This is the maximum DC current that can pass through the LED indefinitely without exceeding power dissipation or junction temperature limits. To ensure long-term reliable operation, it is recommended to operate below this maximum, typically using the recommended operating currents of 20mA or 50mA from the characteristic tables.
• Reverse Voltage (5 V):Like most diodes, the reverse breakdown voltage of an infrared LED is relatively low. Applying a reverse bias exceeding 5V may cause a sharp increase in reverse current, potentially damaging the device. If the LED may be exposed to voltage transients or bidirectional signals, circuit protection measures may be necessary.
• Operating and Storage Temperature Range:The device's operating temperature rating ranges from -40°C to +85°C, suitable for industrial and extended commercial environments. The wider storage temperature range indicates the device's tolerance in a non-powered state.
• Lead Soldering Temperature (260°C for 5 seconds):This parameter specifies the maximum thermal profile the leads can withstand during wave soldering or reflow soldering, measured 1.6mm from the package body. Adhering to this specification is crucial to prevent damage to internal bond wires or package cracking.

2.2 Optoelectronic Characteristics

These parameters are measured under standard test conditions and define the device's performance during normal operation.

• Radiant Intensity (I_E):At I_F=20mA, the typical value is 15.0 mW/sr, and the minimum value is 8.0 mW/sr. Radiant intensity measures the emitted optical power per unit solid angle. The typical value indicates this is a high-efficacy emitter. The minimum value guarantees a basic performance level for production units.
• Peak Emission Wavelength (λ_peak):The typical value is 940 nm. This is the wavelength at which the LED emits its strongest optical power. 940nm falls within the near-infrared spectrum, invisible to the human eye but well-detected by silicon photodiodes and many CMOS/CCD sensors. It is a common standard for infrared systems.
• Spectral Line Half-Width (Δλ):The typical value is 50 nm. This parameter, also known as Full Width at Half Maximum (FWHM), describes the bandwidth of the emitted light. This value means the optical power is distributed across a wavelength range of approximately 915nm to 965nm. This is important when matching with optical filters on the detector side.
• Forward Voltage (V_F):Two values are given: 1.25V / 1.6V at 50mA, and 1.65V / 2.1V at 250mA. V_Fincreases with current due to the internal resistance of the diode. A low V_Fis a key characteristic that reduces power loss and heat generation, particularly beneficial for battery-powered or high-current applications.
• Reverse Current (I_R):At V_R=5V, the maximum value is 100 µA. This is the small leakage current that flows when the diode is reverse-biased at its maximum rated voltage. Ideally, this value should be low.
• Viewing Angle (2θ_1/2):The typical value is 30°. Defined as the full angle at which the radiation intensity drops to half of its peak value. A 30° viewing angle provides a reasonably focused beam, achieving a good balance between intensity and coverage area.

3. Performance Curve Analysis

The datasheet contains multiple graphs illustrating the device's behavior under various conditions. These curves are crucial for predictive modeling and robust design.

3.1 Spectral Distribution (Figure 1)

This curve plots relative radiant intensity versus wavelength. It visually confirms the peak wavelength of 940nm and the spectral half-width. Its shape is typical for AlGaAs-based infrared LEDs, showing a relatively symmetrical distribution around the peak. Designers use this graph to ensure compatibility with the spectral sensitivity of the target photodetector.

3.2 Relationship Between Forward Current and Ambient Temperature (Figure 2)

This derating curve shows how the maximum allowable continuous forward current decreases as ambient temperature rises. At 25°C, the full rated current of 100mA is permitted. As temperature increases, the power dissipation limit is reached at a lower current to prevent junction overheating. This graph is essential for designing systems that operate in high-temperature environments to ensure thermal reliability.

3.3 Relationship Between Forward Current and Forward Voltage (Figure 3)

This is the I-V characteristic curve of a diode. It is nonlinear, showing the typical exponential relationship of a PN junction. This curve allows designers to determine the precise V_F, which is necessary for calculating series resistance values or drive circuit requirements. The figure clearly shows the low V_Fcharacteristic._Fcharacteristic clearly.

3.4 Relationship of Relative Radiant Intensity with Ambient Temperature (Figure 4) and Forward Current (Figure 5)

Figure 4 shows the dependence of light output on temperature. Radiant intensity decreases as temperature increases, which is a common thermal roll-off phenomenon in LEDs. This must be compensated for in applications requiring stable light output over a wide temperature range, for example by using temperature feedback in the drive circuit.

3.5 Radiation Pattern (Figure 6)

This polar plot provides a detailed visualization of the spatial emission pattern. The concentric circles represent relative intensity. The plot confirms a 30° viewing angle and shows the beam profile is fairly smooth and symmetrical, which is ideal for uniform illumination.

4. Mechanical and Packaging Information

4.1 Package Dimensions and Polarity Identification

Na'urar tana amfani da daidaitaccen kayan aiki na radial mai digiri 5. Ana gano anode da cathode ta hanyar tsawon igiyoyin da ke cikin zane. Yawancin lokaci, igiya mafi tsayi tana nufin anode. Kayan aikin suna da ƙugiya don tabbatar da kwanciyar hankali lokacin shigarwa, filin da ke kan ruwan tabarau ana amfani da shi don gano katanga. Ruwan tabarau mai siffar dome mai tsafta an tsara shi don inganta fitar da haske da kusurwar kallo.

4.2 Tape and Reel Specifications

Don sauƙaƙe haɗawa ta atomatik, ana samar da kayan aiki a cikin nau'in kayan aiki masu ƙima. Tebur mai cikakken bayani a shafi na 4 ya ƙayyade duk mahimman girmansu. Waɗannan girmansu an daidaita su don tabbatar da dacewa da na'urorin saka kayan aiki da na'urorin ciyarwa.

5. Soldering and Assembly Guidelines

Ko da yake ba a ba da takamaiman lanƙwasa sake walda ba, amma madaidaicin madaidaicin ƙimar walda na fil ɗin shine ƙayyadaddun ƙuntatawa. Don walda mai igiyar ruwa, bai kamata a wuce wannan ƙimar ba. Don sake walda, ana ba da shawarar yin amfani da daidaitattun lanƙwasa na kayan aikin rami mai zurfi. Ya kamata a guji zama cikin yanayin zafi mai tsayi na dogon lokaci kafin walda, kuma ana ba da shawarar bin daidaitattun ƙa'idodin sarrafa matakin damuwa na zafi.

6. Packaging and Ordering Information

Hoton marufi yana nuna akwatin jigilar kaya na yau da kullun. Yankin lakabin a shafi na ƙarshe na takaddar ƙayyadaddun bayanai yana nuna filayen kamar lambar kayan aiki, adadin marufi, sunan abokin ciniki, nau'in kayan aiki, adadin oda da hatimin sarrafa inganci. Kayan aiki suna bin tsarin lambar sashi na ma'ana. Don yin oda daidai, dole ne a yi amfani da cikakken lambar sashi.

7. Application Suggestions and Design Considerations

7.1 Da'irar Aikace-aikace ta Al'ada

Gudun DC mai sauƙi:A current-limiting resistor must be connected in series. The calculation formula is R = (V_CC- V_F) / I_F. Use the V_Fvalue from the datasheet at the selected I_F. For example, to drive 20mA with a 5V supply: R = (5V - 1.6V) / 0.02A = 170Ω. Ensure the resistor's power rating is sufficient._F²* R).

High-Intensity Pulse Drive:To utilize the 2A peak current capability, transistor switches are required. A small series resistor may still be needed to control the current rise time or provide slight current limiting. The pulse width must be maintained ≤10µs, and the duty cycle must be sufficiently low to keep the average power dissipation within limits.

7.2 Tsare-tsaren Zane na Gani

• Lens:Secondary optical elements can be used to collimate the beam to increase range or shape the spot.
• Alignment:The wide viewing angle facilitates alignment with the detector in proximity sensing. For focused beam applications, mechanical fixtures are crucial.
• Interference:Sunlight and other infrared light sources contain 940nm radiation. Use modulated signals and synchronous detection in the receiver to suppress ambient light noise.

7.3 Gudanar da Zafi

Despite its compact package, power dissipation becomes significant at higher continuous currents. Providing adequate airflow or, in extreme cases, using the PCB as a heat sink via the leads can enhance long-term reliability and maintain output stability.

8. Kwatancen Fasaha da Bambance-bambance

The LTE-3223L-062A differentiates itself in the 5mm infrared emitter market by combiningHigh Pulse Current Capability与Low Forward Voltageto achieve differentiation. Many comparable emitters may have similar continuous current ratings but lower peak pulse ratings. This makes it particularly suitable for applications requiring extremely high instantaneous brightness. The clear package is slightly more efficient than diffused or tinted packages. Its 30° viewing angle is narrower than some "wide-angle" variants but offers higher axial intensity, providing a trade-off between beam concentration and coverage area.

9. Tambayoyin da ake yawan yi

Tambaya: Shin zan iya amfani da fil ɗin GPIO na microcontroller kai tsaye don kunna wannan LED?
Amsa: A'a. Fil ɗin GPIO na yau da kullun yana iya ba da ƙarfin 20-50mA, wanda yake cikin iyaka, amma ba zai iya samar da kusan 1.6V na ƙarfin gaba ba. Dole ne a yi amfani da transistor a matsayin mai kashewa. Don bugun jini na 2A, daidaitaccen da'irar tuƙi ya zama dole.

Tambaya: Menene bambanci tsakanin ƙarfin haske da ƙarfin haske?
Amsa: Ƙarfin haske yana auna jimlar ƙarfin haske, yayin da ƙarfin haske yana auna ƙarfin da idon mutum ya gane. Tunda wannan LED infrared ne wanda idon mutum ba zai iya gani ba, ƙarfinsa na haske a zahiri sifili ne ko kuma ba a ƙayyade shi ba. Ƙarfin haske shine ma'auni daidai.

Tambaya: Yaya za a zaɓi mai gano haske da ya dace?
Amsa: Zaɓi photodiode ko phototransistor tare da madaidaicin madaidaicin a kusa da 940nm. Na'urorin silicon yawanci suna da madaidaicin madaidaicin tsakanin 800-900nm, suna da kyakkyawar dacewa. Tabbatar cewa yankin aiki na mai gano da filin duba sun dace da ƙirar ku ta gani.

10. Misalan Aikace-aikace na Ainihi

Design Case: Long-Range Infrared Beam Break Sensor.
Objective: Detect object interruption of the light beam within a 5-meter distance.
Design: Uses LTE-3223L-062A in pulsed mode. Driven by a 1A pulse via a MOSFET switch. On the receiver side, a focusing lens collects light onto a matched photodiode. The receiver circuit is tuned to the modulation frequency to suppress constant ambient light and low-frequency noise. The high pulse current ensures a strong signal reaches the distant detector, while the low duty cycle keeps the average power low.

11. Hanyoyin Aiki

The device operates based on the principle of electroluminescence in a semiconductor PN junction. When forward biased, electrons from the N-region and holes from the P-region are injected into the junction area. These carriers recombine in the active region, releasing energy in the form of photons. Specific semiconductor materials are chosen so that their bandgap corresponds to photon emission at a 940nm wavelength. The transparent epoxy package protects the semiconductor chip, provides mechanical protection, and also acts as a lens to shape the output beam.

12. Trends na Fasaha

Infrared emitter technology continues to evolve alongside visible LED technology. Trends include:
Power Density Enhancement:Develop chip-scale packaging and advanced thermal management technologies to deliver higher optical power in smaller form factors.
Wavelength Specificity:Develop emitters with narrower spectral bandwidth to improve the signal-to-noise ratio in spectral sensing and optical communications.
Integrated Solutions:Integrate emitters, drivers, and sometimes detectors or sensors into a single module.
High-Speed Modulation:Optimize devices for extremely fast switching speeds to support high-speed data transmission based on infrared.
LTE-3223L-062A yana wakiltar mafita mai cikakken ci gaba da amintacce a cikin wannan tsarin, musamman don aikace-aikacen da ke buƙatar ƙarfin bugun jini mai ƙarfi.