Babban Ƙarfin LED na Infrared HIR-C19D-1N150/L649-P03/TR Takardar Bayani - 5.0x5.0x1.9mm - 850nm - 3.1V - 3W - Takardar Fasaha ta Hausa

1. Bayanin Samfur HIR-C19D-1N150/L649-P03/TR babban ƙarfin diode mai fitar da infrared ne wanda aka ƙera don aikace-aikacen haske masu ƙarfi. Yana da ƙaramin fakitin na'urar da ake hawa a saman (SMD) tare da rufin silikoni mai tsabta da ruwa da babban ruwan tabarau mai siffar duniya, yana inganta fitar da haske da tsarin radiyo. Fitowar hasken na'urar tana tsakiya a 850nm, wanda ya sa ya dace da photodiodes na silicon da phototransistors don tsarin ganowa da hoto. Babban fa'idodinsa sun haɗa da babban fitarwa na radiant daga ƙaramin siffa, kyakkyawan halayen gudanar da zafi, da bin ƙa'idodin muhalli da aminci na zamani kamar RoHS, REACH, da buƙatun marasa halogen.

1.1 Aikace-aikacen Manufa Wannan LED na infrared an yi niyya ne da farko ga aikace-aikacen da ke buƙatar ƙarfi, haske mara ganuwa. Manyan wuraren aikace-aikacen sa sun haɗa da tsarin sa ido da tsaro, inda ake amfani da shi don samar da hasken dare ga kyamarorin CCD. Hakanan ya dace da tsarin infrared daban-daban kamar na'urori masu auna kusanci, na'urori na gane ishara, da hangen nesa na injiniya. Babban ƙarfin radiant yana ba da damar haske mai nisa ko rufe faffadan wurare idan aka kwatanta da LED na infrared na yau da kullun.

2. Ƙayyadaddun Fasaha da Fassarar Manufa Aikin na'urar an ayyana shi a ƙarƙashin daidaitattun yanayin gwaji (T

=25°C). Ana ba da cikakken bincike na ma'auni mahimman nasa a ƙasa.

2.1 Matsakaicin Ƙimar Ƙarshe Waɗannan ƙimar sun ayyana iyakokin damuwa waɗanda sama da su lalacewa na dindindin na iya faruwa ga na'urar. Ba a yi niyya don aiki na yau da kullun ba.

Halin Gaba na Ci gaba (I_A: 1500 mA. Wannan shine matsakaicin halin DC da za'a iya amfani da shi har abada ba tare da wuce iyakar zafin haɗin gwiwa ba.

Halin Gaba na Kololuwa (I

: 5000 mA. Ana iya yarda da wannan babban halin kawai a ƙarƙashin yanayin bugun jini (faɗin bugun ≤100μs, zagayowar aiki ≤1%), yana da amfani don haske mai ƙarfi na ɗan gajeren lokaci.

• Ƙarfin Lantarki na Baya (V_F): 5 V. Wuce wannan ƙarfin lantarki a cikin bias na baya zai iya haifar da rushewar haɗin gwiwa.
• Zafin Haɗin gwiwa (T_FP): 115 °C. Matsakaicin zafin da aka yarda a haɗin gwiwar semiconductor.
• Rushewar Ƙarfi (P_R): 3 W a I
• =700mA. Wannan yana nuna ikon na'urar don sarrafa samar da zafi a takamaiman wurin aiki._j)2.2 Halayen Lantarki da Haske Waɗannan ma'auni suna ayyana fitar da haske da halayen lantarki a ƙarƙashin yanayin aiki na yau da kullun.
• Jimlar Ƙarfin Radiant (P_d): Ƙarfin haske da ake fitarwa a kowane bangare. A halin tuki na 1A, ƙimar yau da kullun tana tsakanin 900mW zuwa 1100mW, yana nuna inganci._FƘarfin Radiant (I

: Ƙarfin haske kowace kusurwa mai ƙarfi, ana auna shi a cikin mW/sr. A 1A, yawanci yana tsakanin 230 zuwa 270 mW/sr. Wannan ma'auni yana da alaƙa da aikace-aikacen katako da aka jagoranta.

Tsawon Zango na Kololuwa (λ

• : 850 nm. Wannan shine tsayin zango inda fitowar haske ta fi ƙarfi, daidai da kololuwar hankali na na'urori masu gano silicon._o)Faɗin Bandwidth na Spectral (Δλ)
• : 25 nm. Wannan yana ayyana kewayon tsayin zango da ake fitarwa, yawanci cikakken faɗi a rabin matsakaici (FWHM)._E)Ƙarfin Lantarki na Gaba (V
• : Yawanci 3.10V a 1A. Wannan shine faɗuwar ƙarfin lantarki a kan LED lokacin aiki, yana da mahimmanci don ƙirar direba da lissafin ɓarnar ƙarfi._P)Kusurwar Dubawa (2θ
• 1/2: digiri 150. Wannan faɗin kusurwar dubawa yana ba da haske mai faɗi, mai watsewa maimakon hasken haske mai kunkuntar, wanda ya dace da rufe yanki.
• 2.3 Halayen Zafi Gudanar da zafi mai tasiri yana da mahimmanci ga manyan LED masu ƙarfi don kiyaye aiki da tsawon rai._F)Juriya na Thermal (R
• th(j-L)_{: 18 K/W (haɗin gwiwa zuwa firam ɗin jagora). Wannan ƙananan ƙima yana nuna kyakkyawan canja wurin zafi na ciki daga guntu zuwa jagororin fakitin, amma ana ƙarfafa gaba ɗaya gudanar da zafi na waje don aiki a manyan halaye.})3. Bayanin Tsarin Rarraba (Binning) Ana rarraba na'urar bisa ga fitar da ƙarfin radiant a daidaitaccen halin gwaji na 1000mA. Wannan yana tabbatar da daidaito a cikin aikin aikace-aikace.

Bin F

: Ƙarfin Radiant daga 640 mW zuwa 1000 mW.

• Bin G_{: Ƙarfin Radiant daga 800 mW zuwa 1260 mW.})Bin H

: Ƙarfin Radiant daga 1000 mW zuwa 1600 mW.

Lambar bin tana ba masu ƙira damar zaɓar LED tare da tabbataccen mafi ƙarancin fitarwa don bukatun aikace-aikacen su na musamman. Duk ma'aunai sun haɗa da jurewar gwaji na ±10%.

• 4. Bincike na Lanƙwasa Aiki Takardar bayani tana ba da lanƙwasa halaye da yawa waɗanda ke da mahimmanci don fahimtar halayen na'urar a ƙarƙashin yanayi daban-daban.4.1 Halin Gaba vs. Ƙarfin Lantarki na Gaba (Lanƙwasa IV) Wannan lanƙwasa yana nuna alaƙar da ba ta layi tsakanin halin yanzu da ƙarfin lantarki. Yana da mahimmanci don ƙirar da'irar iyakance halin yanzu. Lanƙwasa zai nuna ƙarfin lantarki na bakin kofa (kusan 1.2V don GaAlAs) bayan haka halin yanzu yana ƙaruwa da sauri tare da ƙaramin ƙaruwa a cikin ƙarfin lantarki.
• 4.2 Halin Gaba vs. Ƙarfin Radiant/Ƙarfin Haske Waɗannan lanƙwasa suna nuna dogaron fitar da haske akan halin tuki. Yawanci, fitarwa yana ƙaruwa da ƙarfi a ƙananan halaye sannan yakan cika a manyan halaye saboda tasirin zafi da raguwar inganci. Lanƙwasa da aka bayar don wannan na'urar a 350mA, 700mA, da 1A suna nuna wannan yanayin.4.3 Matsakaicin Ƙarfin Radiant vs. Matsakaicin Karkacewa Wannan makircin polar yana nuna kusurwar dubawa na digiri 150. Yana nuna tsarin radiyo, wanda kusan Lambertian ne (rarrabawar cosine) saboda ruwan tabarau mai siffar duniya, yana samar da haske iri ɗaya akan faffadan yanki.
• 4.4 Halin Gaba vs. Yanayin Yanayi Wannan jadawali yana da mahimmanci don rage ƙima. Yana nuna yadda dole ne a rage matsakaicin halin gaba da aka yarda yayin da yanayin yanayi ke ƙaruwa don hana zafin haɗin gwiwa ya wuce iyakarsa na 115°C. Wannan lanƙwasa yana ba da bayanan kai tsaye ga ƙirar zafi da buƙatun mai zafi.5. Bayanin Injiniya da Fakitin 5.1 Girman Fakitin Na'urar tana cikin ƙaramin fakitin SMD na 5.0mm x 5.0mm mai tsayi 1.9mm. Ruwan tabarau babban dome ne mai siffar duniya. Matsakaicin jurewar girma shine ±0.1mm sai dai idan an faɗi akasin haka. An ba da takamaiman gargaɗi kada a kula da na'urar ta ruwan tabarau, saboda damuwar injiniya na iya haifar da gazawa.

5.2 Tsarin Pad da Gano Polarity Fakitin yana da pad guda uku: Pad 1 (Anode), Pad 2 (Cathode), da babban pad na tsakiya na thermal (P). Pad ɗin thermal yana da mahimmanci don canja wurin zafi daga mutuwar LED zuwa allon da'ira da aka buga (PCB). Zanen shimfidar pad yana nuna matsayin anode da cathode a sarari don daidaitaccen haɗin lantarki.

6. Jagororin Solder da Haɗawa 6.1 Bayanin Yanayin Solder na Reflow Na'urar ta dace da daidaitattun hanyoyin reflow na SMT marasa gubar. Shawarar bayanin ita ce kamar haka:

Ƙimar Hawa

: 2–3 °C/sec

Preheat

: 150–200 °C na dakika 60–120

Lokaci Sama da Liquidus (T

=217°C)

: dakika 60–90

Zafin Kololuwa (T

: 240 ±5 °C

Lokaci cikin 5°C na Kololuwa

: Matsakaicin dakika 20

Ƙimar Saukarwa

: 3–5 °C/sec

6.2 Muhimman Bayanan Haɗawa Bai kamata a yi solder reflow fiye da sau biyu ba don guje wa matsanancin damuwa na thermal akan fakitin da haɗin waya.

Dole ne a guje wa damuwar injiniya akan LED yayin dumama (misali, daga lanƙwasa allon).

Bai kamata a lanƙwasa PCB bayan solder ba, saboda hakan na iya fashe haɗin solder ko fakitin LED kanta.

Isasshen gudanar da zafi, kamar yadda aka nuna a cikin bayanan, wajibi ne don aiki mai dogaro a manyan halaye.

• 7. Bayanin Fakitin da Oda 7.1 Ƙayyadaddun Kaset da Reel Ana samar da na'urori akan kaset ɗin mai ɗaukar kaya da reel don haɗawa ta atomatik. Kowace reel tana ƙunshe da guda 400. An ba da cikakkun bayanai game da girmen kaset ɗin mai ɗaukar kaya da reel don tabbatar da dacewa da kayan aikin zaɓi da sanyawa.7.2 Fakitin Mai Hatsarin Danshi Ana tattara samfurin a cikin jakar aluminum mai jure danshi tare da desiccant don kare shi daga danshin yanayi yayin ajiya da sufuri, wanda shine daidaitaccen aiki don abubuwan SMD.
• 8. Shawarwari na Aikace-aikace da Abubuwan Ɗauka a Zaman Ɗaki 8.1 Ƙirar Da'irar Mai Tuki Saboda babban halin gaba (har zuwa 1.5A ci gaba), direba mai tsayayyen halin yanzu yana da mahimmanci. Dole ne direba ya iya samar da halin da ake buƙata yayin da yake jure faɗuwar ƙarfin lantarki na gaba (kusan 3.1V a 1A). Ana fifita masu sarrafa sauyawa akan masu sarrafa layi don inganci a waɗannan matakan ƙarfi. Dole ne ƙirar direba ta haɗa da kariya ta thermal ko rage ƙimar halin yanzu dangane da lanƙwasa yanayin yanayi.8.2 Ƙirar Gudanar da Zafi Wannan shine mafi mahimmancin al'amarin amfani da wannan babban ƙarfin LED. Ƙananan juriya na thermal na haɗin gwiwa zuwa jagora (18K/W) kawai wani ɓangare ne na tsarin. Dole ne a rage matsakaicin hanyar thermal gaba ɗaya daga haɗin gwiwa zuwa yanayi (R
• th(j-A)_L) dole ne a rage shi. Wannan ya haɗa da:Yin amfani da PCB tare da jerin hanyoyin thermal a ƙarƙashin pad ɗin thermal da aka haɗa zuwa manyan jiragen tagulla ko Layer na ƙasa na ciki.
• Yiwuwar haɗa mai zafi na waje zuwa PCB._P)Tabbatar da kyakkyawar iska a cikin aikace-aikacen ƙarshe.
• Yin amfani da kayan aikin thermal idan ya cancanta.Bai kamata a taɓa wuce matsakaicin zafin haɗin gwiwa na 115°C ba. Lanƙwasa rage ƙima (Halin Gaba vs. Yanayin Yanayi) yana ba da bayanan da ake buƙata don ƙididdige aikin mai zafi da ake buƙata.
• 8.3 Ƙirar Haske Kusurwar dubawa na digiri 150 tana ba da ɗimbin ɗaukar hoto. Don aikace-aikacen da ke buƙatar katako mai mai da hankali, ana iya amfani da na'urorin gani na biyu (ruwan tabarau ko masu nunawa). Tsawon zango na 850nm ba a iya gani da idon ɗan adam amma sauƙi ne ga na'urori masu gano silicon da yawancin kyamarorin CCD/CMOS, waɗanda galibi suna da tace infrared wanda dole ne a cire ko maye gurbinsu da wanda ke wucewa 850nm don amfani mai tasiri.9. Kwatancen Fasaha da Bambance-bambance Idan aka kwatanta da daidaitattun LED na infrared na 5mm ko 3mm ta hanyar rami, wannan na'urar tana ba da fitarwa mai ƙarfi sosai (ta tsari ɗaya ko fiye) a cikin fakitin da ake hawa a saman, yana ba da damar ƙira masu ƙarfi da ƙarfi. Mahimman bambance-bambancen sa shine haɗinsa na babban ƙarfi (har zuwa ɓarnar 3W), faɗin kusurwar dubawa, da haɗin gwiwar pad na thermal don ingantaccen ɓarkewar zafi—wani fasali da yawanci ba ya ɓace a cikin ƙananan ƙarfin LED na SMD. Amfani da kayan guntu GaAlAs daidaitacce ne don masu fitar da infrared masu inganci a wannan kewayon tsayin zango.

10. Tambayoyin da ake yawan yi (Dangane da Ma'aunin Fasaha) 10.1 Menene bambanci tsakanin Ƙarfin Radiant da Ƙarfin Haske? Ƙarfin Radiant (P

• , a cikin mW) shine jimlar ƙarfin haske da ake fitarwa a kowane bangare. Ƙarfin Radiant (I
• , a cikin mW/sr) shine ƙarfin da ake fitarwa kowace kusurwa mai ƙarfi a takamaiman shugabanci. Don babban LED mai faɗin kusurwa kamar wannan, jimlar ƙarfin yana da girma, amma ƙarfin a kowane shugabanci ya fi ƙasa da LED mai ƙunƙuntaccen katako tare da irin wannan jimlar ƙarfi.
• 10.2 Shin zan iya tuka wannan LED kai tsaye daga tushen ƙarfin lantarki? A'a. LED na'urori ne masu tuki halin yanzu. Ƙarfin lantarki na gaba yana da jurewa kuma yana bambanta da zafin jiki. Haɗawa kai tsaye zuwa tushen ƙarfin lantarki zai haifar da halin da ba a sarrafa shi ba, mai yiwuwa ya wuce matsakaicin ƙima kuma ya lalata LED. Direba mai tsayayyen halin yanzu ko da'irar iyakance halin yanzu wajibi ne.
• 10.3 Me ya sa ake ƙarfafa gudanar da zafi sosai? Manyan LED suna canza wani ɓangare mai mahimmanci na shigarwar lantarki zuwa zafi. Idan ba a cire wannan zafi yadda ya kamata ba, zafin haɗin gwiwa yana tashi. Manyan zafin haɗin gwiwa yana haifar da raguwar fitar da haske (raguwar inganci), haɓakar lalata kayan semiconductor da sauri, da kuma gazawar bala'i a ƙarshe. Ƙirar thermal da ta dace tana tabbatar da aiki, dogaro, da tsawon rai.

10.4 Menene ma'anar Lambar Bin don ƙirar na? Zaɓin babban bin (misali, Bin H akan Bin F) yana tabbatar da mafi girman mafi ƙarancin fitarwa na radiant. Wannan yana ba ku damar ƙirar tsarin ku tare da sanannen, tabbataccen matakin haske. Idan ƙirar ku tana da isasshen gefe, ƙananan bin na iya zama mai fa'ida mai tsada. Idan kuna tura iyakokin kewayon haske ko hankalin kyamara, babban bin yana da mahimmanci.

11. Nazarin Aiki na Ƙira da Amfani Yanayi: Ƙirar Mai haskakawa IR don Kyamarar Tsaro Mai ƙira yana buƙatar ƙirar ƙaramin mai haskakawa IR da aka hawa bango don tsawaita kewayon hangen nesa na dare na kyamarar tsaro daga mita 10 zuwa mita 25. Hankalin kyamarar yana da hankali ga 850nm. Mai ƙira ya zaɓi LED na HIR-C19D-1N150/L649-P03/TR a cikin Bin H don matsakaicin fitarwa.

Matakan Ƙira:

Ƙirar Lantarki

: An ƙera direba mai sauyawa mai tsayayyen halin yanzu don samar da 1000mA ga LED daga wadata DC na 12V. Direba ya haɗa da kariya ta wuce gona da iri da rufe thermal.

Ƙirar Thermal

: Ana amfani da PCB mai Layer 2 tare da nauyin tagulla na 2oz. Jerin hanyoyin thermal suna haɗa pad ɗin thermal na LED zuwa babban zubar da tagulla na ƙasa, wanda ke aiki azaman mai zafi. An yi rufin da aluminum tare da hawan PCB kai tsaye zuwa gare shi ta amfani da man thermal don ƙara ɓarkewar zafi.

Ƙirar Haske/Injiniya

: An shirya LED guda huɗu a cikin tsarin murabba'i akan PCB. Wani taga mai tsabta na polycarbonate yana kare LED. Faɗin katako na digiri 150 na kowane LED yana mamaye don ƙirƙirar ambaliya iri ɗaya na hasken infrared wanda ke rufe filin duban kyamara a kewayon da ake so.

Tabbatarwa_{: An gwada samfurin a cikin ɗaki mai duhu. Kyamarar thermal ta tabbatar da cewa zafin haɗin gwiwa na LED ya kasance ƙasa da 100°C. Kyamarar tsaro ta yi nasarar gano abubuwa a nisan mita 25 tare da bambanci mai tsabta.}Wannan lamarin yana nuna dogaro na ƙirar direba, gudanar da zafi, da shimfidar gani lokacin amfani da wannan babban ɓangaren ƙarfi.

• 12. Ƙa'idar Aiki HIR-C19D-1N150/L649-P03/TR tushen haske ne na semiconductor wanda ya dogara da tsarin Gallium Aluminum Arsenide (GaAlAs). Lokacin da aka yi amfani da ƙarfin lantarki na gaba wanda ya wuce ƙarfin bandgap na diode, ana shigar da electrons da ramuka cikin yanki mai aiki inda suke sake haɗuwa. Wannan tsarin sake haɗuwa yana sakin makamashi a cikin nau'in photons. Takamaiman abun da ke ciki na Layer na GaAlAs yana ƙayyade ƙarfin bandgap, wanda kuma yana ayyana kololuwar tsayin zango na photons da aka fitar—a wannan yanayin, nanometers 850, wanda ke cikin kusancin infrared spectrum. Rufin silikoni mai tsabta da ruwa yana kare guntu na semiconductor kuma yana aiki azaman farkon kayan aikin gani, tare da siffarsa mai siffar duniya tana taimakawa fitar da haske yadda ya kamata da kuma siffanta tsarin radiyo.
• 13. Trends na Fasaha Filin manyan LED na infrared yana ci gaba da haɓaka tare da yanayi da yawa bayyananne. Akwai ci gaba na yau da kullun don mafi girman inganci na bangon toshe (ƙarfin haske fitarwa / ƙarfin lantarki a ciki) don rage samar da zafi da amfani da makamashi don irin wannan fitar da haske. Wannan ya haɓaka ci gaban fasahohin girma na epitaxial da ƙirar guntu. Fasahar fakitin kuma tana inganta don ba da ƙananan juriya na thermal, yana ba da damar fitar da ƙarin zafi daga guntu. Bugu da ƙari, akwai haɓakar haɗin kai, tare da direbobi kuma wani lokacin ma sauƙaƙan dabaru na sarrafawa ana haɗa su tare da mutuwar LED don ƙirƙirar ingantattun kayan aikin haske masu wayo, masu sauƙin amfani. Bukatar amintacce, manyan tushen infrared yana ci gaba da faɗaɗa aikace-aikace a cikin motar LiDAR, gane fuska, da ingantaccen sarrafa kansa na masana'antu.
• Ensuring good airflow in the end application.
• Using thermal interface material if necessary.

The maximum junction temperature of 115°C must never be exceeded. The derating curve (Forward Current vs. Ambient Temperature) provides the necessary data to calculate the required heatsink performance.

.3 Optical Design

The 150-degree viewing angle provides wide coverage. For applications requiring a more focused beam, secondary optics (lenses or reflectors) can be used. The 850nm wavelength is invisible to the human eye but easily detectable by silicon sensors and most CCD/CMOS cameras, which often have an infrared cut filter that must be removed or replaced with one that passes 850nm for effective use.

. Technical Comparison and Differentiation

Compared to standard 5mm or 3mm through-hole infrared LEDs, this device offers significantly higher radiant output (by an order of magnitude or more) in a surface-mount package, enabling more compact and robust designs. Its key differentiators are its combination of high power (up to 3W dissipation), wide viewing angle, and the integrated thermal pad for effective heat dissipation—a feature often missing in lower-power SMD LEDs. The use of GaAlAs chip material is standard for high-efficiency infrared emitters in this wavelength range.

. Frequently Asked Questions (Based on Technical Parameters)

.1 What is the difference between Radiant Power and Radiant Intensity?

Radiant Power (P_o, in mW) is the total optical power emitted in all directions. Radiant Intensity (I_E, in mW/sr) is the power emitted per unit solid angle in a specific direction. For a wide-angle LED like this one, the total power is high, but the intensity in any single direction is lower than a narrow-beam LED with the same total power.

.2 Can I drive this LED directly from a voltage source?

No. LEDs are current-driven devices. Their forward voltage has a tolerance and varies with temperature. Connecting directly to a voltage source will cause an uncontrolled current to flow, likely exceeding the maximum rating and destroying the LED. A constant-current driver or a current-limiting circuit is mandatory.

.3 Why is heatsinking so strongly emphasized?

High-power LEDs convert a significant portion of electrical input into heat. If this heat is not effectively removed, the junction temperature rises. High junction temperatures lead to reduced light output (efficiency droop), accelerated degradation of the semiconductor materials, and ultimately catastrophic failure. Proper thermal design ensures performance, reliability, and longevity.

.4 What does the Bin Code mean for my design?

Selecting a higher bin (e.g., Bin H over Bin F) guarantees a higher minimum radiant output. This allows you to design your system with a known, guaranteed level of illumination. If your design has ample margin, a lower bin may be more cost-effective. If you are pushing the limits of illumination range or camera sensitivity, a higher bin is necessary.

. Practical Design and Usage Case Study

Scenario: Designing an IR Illuminator for a Security Camera

A designer needs to create a compact, wall-mounted IR illuminator to extend the night-vision range of a security camera from 10 meters to 25 meters. The camera's sensor is sensitive to 850nm. The designer selects the HIR-C19D-1N150/L649-P03/TR LED in Bin H for maximum output.

Design Steps:

1. Electrical Design: A switching constant-current driver is designed to provide 1000mA to the LED from a 12V DC supply. The driver includes over-current and thermal shutdown protection.
2. Thermal Design: A 2-layer PCB is used with a 2oz copper weight. An array of thermal vias connects the LED's thermal pad to a large bottom copper pour, which acts as a heatsink. The enclosure is made of aluminum with the PCB mounted directly to it using thermal paste to further dissipate heat.
3. Optical/Mechanical Design: Four LEDs are arranged in a square pattern on the PCB. A flat, clear polycarbonate window protects the LEDs. The wide 150-degree beam of each LED overlaps to create a uniform flood of infrared light covering the camera's field of view at the desired range.
4. Validation: The prototype is tested in a dark room. A thermal camera confirms the LED junction temperatures remain below 100°C. The security camera successfully identifies objects at 25 meters with clear contrast.

This case highlights the interdependence of driver design, thermal management, and optical layout when utilizing this high-power component.

. Operational Principle

The HIR-C19D-1N150/L649-P03/TR is a semiconductor light source based on a Gallium Aluminum Arsenide (GaAlAs) heterostructure. When a forward voltage exceeding the diode's bandgap energy is applied, electrons and holes are injected into the active region where they recombine. This recombination process releases energy in the form of photons. The specific composition of the GaAlAs layers determines the bandgap energy, which in turn defines the peak wavelength of the emitted photons—in this case, 850 nanometers, which is in the near-infrared spectrum. The water-clear silicone encapsulation protects the semiconductor chip and acts as a primary optical element, with its spherical shape helping to extract light efficiently and shape the radiation pattern.

. Technology Trends

The field of high-power infrared LEDs continues to evolve with several clear trends. There is a constant drive for higher wall-plug efficiency (optical power out / electrical power in) to reduce heat generation and energy consumption for the same light output. This involves advancements in epitaxial growth techniques and chip design. Package technology is also improving to offer lower thermal resistance, allowing more heat to be extracted from the chip. Furthermore, there is growing integration, with drivers and sometimes even simple control logic being co-packaged with the LED die to create smarter, easier-to-use illumination modules. The demand for reliable, high-power infrared sources is sustained by expanding applications in automotive LiDAR, facial recognition, and advanced industrial automation.