Bayanin Fasaha na Infrared Emitter LTE-3276 - Tsawon Ra'ayi 850nm - Halin Yanzu na Gaba 50mA - Ƙarfin Wutar Lantarki na Gaba 1.8V - Babban Ƙarfi & Sauri - Takardun Fasaha na Hausa

1. Bayanin Samfur LTE-3276 babban infrared (IR) emitter ne wanda aka ƙera don aikace-aikacen da ke buƙatar saurin amsawa da fitarwa mai ƙarfi. Babban fa'idodinsa suna cikin haɗin saurin sa da ƙarfin ƙarfi, wanda ya sa ya dace da aikin bugun jini a cikin yanayi mai wahala. Na'urar tana cikin fakitin bayyananne, wanda ya zama al'ada ga masu fitar da IR don ba da damar mafi girman watsa hasken infrared. Kasuwar da aka yi niyya ta haɗa da sarrafa masana'antu, tsarin sadarwa (kamar IrDA), sarrafa nesa, maɓallan gani, da tsarin firikwensin inda ake buƙatar ingantaccen sigina mai ƙarfi na infrared.

2. Bincike Mai zurfi na Sigogi na Fasaha

2.1 Madaidaicin Ƙididdiga Waɗannan ƙididdiga suna bayyana iyakokin da za su iya haifar da lalacewa na dindindin ga na'urar. Ba a ba da shawarar aiki a ko kusa da waɗannan iyakokin na tsawon lokaci.

Rashin Ƙarfin Wutar Lantarki (P

):

• 200 mW. Wannan shine mafi girman ƙarfin wutar lantarki da na'urar za ta iya watsawa a matsayin zafi a kowane yanayin aiki._DKololuwar Halin Yanzu na Gaba (I):
• 1 A. Wannan babban halin yanzu yana halatta ne kawai a ƙarƙashin yanayin bugun jini (bugun jini 300 a kowace dakika, faɗin bugun jini 10 μs). Yana nuna ikon na'urar don ɗan gajeren lokaci mai ƙarfi na haske._FPCi gaba da Halin Yanzu na Gaba (I):
• 100 mA. Wannan shine mafi girman halin yanzu na DC da za a iya amfani da shi akai-akai._FƘarfin Wutar Lantarki na Baya (V):
• 5 V. Wuce wannan ƙarfin wutar lantarki a cikin baya zai iya rushe haɗin semiconductor._RYanayin Aiki & Ma'ajiyar Zafin Jiki:-40°C zuwa +85°C. Wannan faɗin kewayon yana tabbatar da amincin a cikin yanayi mai wahala.
• Zafin Solder na Jagora:260°C na dakika 6 a nisan 1.6mm daga jiki. Wannan yana da mahimmanci ga tsarin solder ko sake kunnawa don hana lalacewar zafi.
• 2.2 Halaye na Lantarki & Na Gani Waɗannan sigogi an ƙayyade su a yanayin yanayi (T) na 25°C kuma suna bayyana madaidaicin aikin na'urar.

Ƙarfin Radiant (I

):_AMa'auni mai mahimmanci na ƙarfin fitarwa na gani a kowane kusurwa mai ƙarfi. A I

• = 20mA, yana da 12.75 mW/sr (na al'ada). A I_E= 50mA, yana ƙaruwa sosai zuwa 32 mW/sr (na al'ada), yana nuna haɓaka mara kyau, mai inganci tare da halin yanzu.Kololuwar Tsawon Ra'ayi (λ_F):_F850 nm (na al'ada). Wannan yana cikin kusancin infrared spectrum, wanda ba a iya gani da idon ɗan adam amma ana iya gano shi cikin sauƙi ta hanyar photodiodes na silicon da kyamarori masu hankali na IR.
• Rabin Faɗin Layin Siffa (Δλ):_P40 nm (na al'ada). Wannan yana nuna faɗin bandwidth na siffa; ƙunƙuntaccen faɗi zai nuna tushen mafi yawan launi ɗaya.Ƙarfin Wutar Lantarki na Gaba (V
• ):A I
• = 50mA, V_Fyana da 1.49V (na al'ada), tare da matsakaicin 1.80V. A I= 200mA, V_Fyana tashi zuwa 1.83V (na al'ada), matsakaicin 2.3V. Wannan ingantaccen coefficient na zafin jiki dole ne a yi la'akari da shi a cikin ƙirar direba._FKusurwar Dubawa (2θ_F1/2_F):
• Digiri 50 (na al'ada). Wannan shine cikakken kusurwar da ƙarfin radiant ya faɗi zuwa rabin ƙimar kololuwar sa. Kusurwar 50° tana ba da daidaito mai kyau tsakanin tattara katako da ɗaukar hoto._{3. Bincike na Ma'aunin Aiki Takardun bayanin yana ba da madaidaicin ma'auni da yawa waɗanda ke da mahimmanci don ƙirar kewayawa da fahimtar halayen na'urar a ƙarƙashin yanayi daban-daban.}3.1 Rarraba Siffar Ra'ayi (Hoto na 1) Wannan ma'auni yana zana madaidaicin ƙarfin radiant akan tsawon ra'ayi. Yana tabbatar da kololuwar tsawon ra'ayi a kusa da 850 nm kuma yana nuna siffa da faɗi (rabin faɗi 40 nm) na siffar fitarwa. Wannan yana da mahimmanci don daidaita mai fitarwa tare da hankalin siffar mai ganowa.3.2 Halin Yanzu na Gaba vs. Ƙarfin Wutar Lantarki na Gaba (Hoto na 3) Wannan ma'aunin IV yana nuna alaƙar exponential na al'ada na diode. Ma'aunin yana ba masu ƙira damar tantance ƙarfin wutar lantarki da ake buƙata don halin yanzu na aiki da ake so, wanda ke da mahimmanci don ƙirar direbobi masu ci gaba da halin yanzu.

3.3 Madaidaicin Ƙarfin Radiant vs. Halin Yanzu na Gaba (Hoto na 5) Wannan jadawalin yana nuna yadda fitowar haske ke ƙaruwa tare da halin yanzu na tuƙi. Gabaɗaya yana da layi a ƙananan halin yanzu amma yana iya nuna tasirin jikewa a babban halin yanzu saboda iyakokin zafi da inganci. Wannan bayanin yana da mahimmanci don saita wurin aiki don cimma ƙarfin gani da ake buƙata.

3.4 Madaidaicin Ƙarfin Radiant vs. Yanayin Yanayi (Hoto na 4) Wannan ma'auni yana nuna mummunan coefficient na zafin jiki na fitarwa na LED. Yayin da yanayin yanayi ya tashi, ƙarfin radiant yana raguwa. Wannan raguwar zafin jiki dole ne a haɗa shi cikin ƙira da aka yi niyya don yanayin zafi don tabbatar da isasshen gefen sigina.

3.5 Zanen Radiation (Hoto na 6) Wannan zanen polar yana wakiltar rarraba sararin samaniya na hasken da aka fitar, yana bayyana kusurwar dubawa na digiri 50 a fili. Yana taimakawa wajen ƙirar tsarin gani don mayar da hankali ko daidaita katakon IR.

4. Bayanin Injiniya & Fakitin

4.1 Girmen Fakitin Na'urar tana amfani da fakitin ta hanyar rami na al'ada, mai yiwuwa salon T-1 3/4 (5mm) na gama gari ga masu fitar da IR. Muhimman bayanan girma daga takardun bayanin sun haɗa da: Duk girmen suna cikin millimeters (inci). Tolerance shine ±0.25mm(.010") sai dai idan an lura daban. Resin da aka fitar a ƙarƙashin flange shine 1.5mm(.059") matsakaicin. Ana auna tazarar jagora a inda jagororin suka fito daga fakitin. Kayan fakitin bayyananne yawanci epoxy ne, wanda aka inganta don babban watsawa a 850 nm.

4.2 Gano Polarity Ga fakitin LED na al'ada, dogon jagora yawanci shine anode (tabbatacce), kuma ɗan gajeren jagora shine cathode (maras kyau). Fakitin na iya samun gefe mai lebur kusa da cathode. Yin lura da daidaitaccen polarity yana da mahimmanci don hana lalacewar baya.

5. Jagororin Solder & Taro An bayyana madaidaicin ƙididdiga don solder na jagora a fili: 260°C na dakika 6, an auna 1.6mm (.063") daga jiki . Wannan sigogi ne mai mahimmanci don taro. Solder Wave/Hannu: Ku bi madaidaicin iyakar 260°C/6s. Ana ba da shawarar dumama kafin don rage girgizar zafi. Reflow Solder: Duk da yake ba a bayyana shi a fili ba don SMD, bayanin zafin jiki ya kamata ya tabbatar da cewa zafin jikin fakitin bai wuce matsakaicin ma'ajiyar 85°C ba na tsawon lokaci, kuma zafin jagora a ƙayyadadden wuri bai kamata ya wuce 260°C ba. Yanayin Ajiya: Ajiye a cikin yanayi mai bushewa, anti-static a cikin ƙayyadadden kewayon zafin jiki (-40°C zuwa +85°C) don hana ɗaukar danshi da lalacewa.

6. Shawarwari na Aikace-aikace

6.1 Yanayin Aikace-aikace na Al'ada Watsa Bayanan Infrared (IrDA): Saurinsa ya sa ya dace da hanyoyin haɗin bayanai na jeri. Sarrafa Nesa: Babban ƙarfi yana tabbatar da dogon zango da aiki mai aminci. Maɓallan Gani & Gano Abu: Ana amfani da shi tare da mai ganowa don fahimtar kasancewa, matsayi, ko ƙidaya. Labulen Tsaro na Masana'antu: Ƙirƙirar shingen katako mara ganuwa don kare na'ura. Hasken Duban Dare: Don kyamarorin CCTV masu hankali na IR.

6.2 Abubuwan Tunani na ƙira Kewayon Direba: Koyaushe yi amfani da resistor mai iyakance halin yanzu ko direba mai ci gaba da halin yanzu. Yi lissafi dangane da ƙarfin wutar lantarki na gaba (V

) a halin yanzu na aiki da ake so (I

). Gudanar da Zafi: Don ci gaba da aiki kusa da matsakaicin halin yanzu, yi la'akari da ɓacin ƙarfin wutar lantarki (P

= V

* I

) kuma tabbatar da isasshen heatsinking idan ya cancanta don kiyaye zafin haɗin a cikin iyakoki. Aikin Bugun Jini: Don kololuwar halin yanzu na bugun jini na 1A, tabbatar da direba zai iya isar da buƙatun bugun jini mai girma tare da saurin tashi/faɗuwa don amfani da ikon sauri. Ƙirar Gani: Yi amfani da ruwan tabarau ko masu nunawa don siffata katakon 50° bisa ga buƙatun aikace-aikacen (misali, kunkuntar don dogon zango, faɗi don ɗaukar hoto yanki). Daidaitawar Mai Ganowa: Haɗa tare da mai ganowa (misali, phototransistor, photodiode) wanda mafi girman hankalin siffar sa yana kusa da 850 nm don mafi kyawun aiki.

• 7. Kwatancen Fasaha & Bambanci LTE-3276 ya bambanta kansa a cikin kasuwa ta hanyar haɗin sigogi na musamman: Babban ƙarfi a Matsakaicin Halin Yanzu: 32 mW/sr a 50mA fitarwa mai ƙarfi ne, mai amfani ga aikace-aikacen da ke buƙatar ingantaccen sigina zuwa amo. Babban ƙarfin Sauri: Ƙayyadaddun aikin bugun jini yana nuna saurin amsawa na asali, wanda ya dace da siginoni masu daidaitawa. Ƙirar Ƙarfi: Faɗin kewayon zafin jiki na aiki da fakitin bayyananne suna nuna ƙira don aminci. Idan aka kwatanta da daidaitattun ƙananan ƙarfin IR LEDs, wannan na'urar tana ba da ƙarfin radiant mafi girma. Idan aka kwatanta da diodes na laser, yana da aminci (idan ido ya aminta a cikin wannan aji na ƙarfi), yana da katako mai faɗi, kuma gabaɗaya yana da ƙarfi kuma yana da sauƙin tuƙi.
• 8. Tambayoyin da ake yawan yi (Dangane da Sigogi na Fasaha) Q: Zan iya tuƙa wannan LED kai tsaye daga fil ɗin microcontroller na 5V? A: A'a. Dole ne ku yi amfani da resistor mai iyakance halin yanzu. Misali, don tuƙa a I
• =50mA tare da V
• na ~1.5V daga wadata 5V: R = (5V - 1.5V) / 0.05A = 70 Ohms. Yi amfani da resistor 68 ko 75 Ohm kuma duba ƙimar ƙarfin (P = I

R = 0.175W, don haka resistor 1/4W ya isa). Q: Menene bambanci tsakanin Ƙarfin Radiant (mW/sr) da Abubuwan da suka faru na Radiant na Budewa (mW/cm²)? A: Ƙarfin Radiant shine ƙarfin wutar lantarki da ake fitarwa a kowane raka'a mai ƙarfi (steradian), yana bayyana ƙarfin jagora na tushen. Abubuwan da suka faru na Radiant na Budewa shine yawan ƙarfin wutar lantarki (mW a kowace cm²) da ke isa saman mai ganowa a wani nisa da daidaitawa. Na ƙarshe ya dogara da na farko da nisa/dokar murabba'i. Q: Ta yaya zan yi amfani da shi a yanayin bugun jini? A: Yi amfani da maɓalli na transistor (BJT ko MOSFET) wanda ke sarrafa siginar dabaru don buga LED. Tabbatar da direba zai iya samar da babban kololuwar halin yanzu (har zuwa 1A) tare da saurin canzawa. Matsakaicin halin yanzu dole ne har yanzu ya mutunta ƙimar halin yanzu na ci gaba (100mA) lokacin da ake la'akari da aikin aiki. Q: Me ya sa fitarwa ke raguwa tare da zafin jiki? A> Wannan halayen asali ne na LEDs na semiconductor. Ƙaruwar zafin jiki yana ƙaruwa da hanyoyin sake haɗawa marasa radiation a cikin kayan semiconductor, yana rage ingancin quantum na ciki don haka fitowar haske.

9. Lamarin Ƙira na Aiki Lamari: Ƙirƙirar Firikwensin Gano Abu mai Nisa na Infrared. Manufa: Gano wani abu a nisan mita 5. Matakan Ƙira: Tukin Mai Fitarwa: Aiki da LTE-3276 a I

=50mA (bugun jini a 1kHz, aikin aiki 50%) don cimma kololuwar ƙarfi mai girma (32 mW/sr) yayin kiyaye matsakaicin ƙarfin wutar lantarki. Kayan Gani: Ƙara ruwan tabarau mai sauƙi na collimating a gaban mai fitarwa don rage katakon 50° zuwa katako mai mai da hankali ~10°, yana ƙara ƙarfi sosai a nesa. Mai Ganowa: Yi amfani da phototransistor na silicon da aka daidaita tare da kololuwar amsa a 850nm. Sanya tacewa mai kunkuntar bandpass (mai tsakiya a 850nm) a gabansa don ƙin hasken yanayi. Kewayawa: Kewayon mai karɓa yana haɓaka ƙananan photocurrent. Yi amfani da ganowa na aiki tare (daidaita mai fitarwa da daidaita mai karɓa zuwa mitar iri ɗaya) don ƙin hasken yanayi na DC da ƙararrawar ƙananan mitar, yana inganta kewayo da aminci sosai. Wannan saitin yana amfani da babban ƙarfi da saurin LTE-3276 don tsarin ganowa mai ƙarfi, mara tsangwama.

10. Gabatar da Ka'idar Aiki Mai fitarwa na infrared kamar LTE-3276 diode ne mai fitar da haske (LED) wanda ya dogara da ilimin kimiyyar lantarki na semiconductor. Lokacin da aka yi amfani da ƙarfin wutar lantarki na gaba a kan haɗin p-n, ana shigar da electrons da ramuka cikin yankin aiki. Lokacin da waɗannan masu ɗaukar caji suka sake haɗuwa, suna sakin makamashi. A cikin wannan na'urar ta musamman, kayan semiconductor (yawanci bisa Aluminum Gallium Arsenide - AlGaAs) an ƙera shi ta yadda wannan makamashi yana fitarwa azaman photons a cikin siffar infrared, tare da kololuwar tsawon ra'ayi na 850 nanometers. Fakitin epoxy "bayyananne bayyananne" an ƙara shi don zama bayyananne ga wannan tsawon ra'ayi, yana ba da damar photons su tsere cikin inganci. Halin "sauri mai girma" yana nufin saurin kunna da kashe lokutan wannan aikin sake haɗawa, yana ba da damar LED don daidaitawa a manyan mitoci don watsa bayanai.

11. Trends na Fasaha Fasahar mai fitarwa na infrared tana ci gaba da haɓaka tare da manyan trends na gani. Muhimman ci gaba sun haɗa da: Ƙaruwar Ƙarfin Wutar Lantarki: Bincike ya mayar da hankali kan inganta ingancin quantum na ciki (ƙarin photons a kowane electron) da ingancin fitar da haske daga fakitin, wanda ke haifar da mafi girman ƙarfin radiant don ƙarfin wutar lantarki iri ɗaya. Ƙananan Siffofi: Turawa zuwa ƙananan ƙira yana tura fakitin na'urar da aka haɗa da saman (SMD) tare da irin wannan ko mafi kyawun aiki fiye da nau'ikan rami na al'ada. Ƙarfafa Sauri: Don aikace-aikacen sadarwa, ana haɓaka na'urori tare da mafi girman bandwidth na daidaitawa don tallafawa mafi girman ƙimar bayanai. Bambance-bambancen Tsawon Ra'ayi: Duk da yake 850nm da 940nm sun zama gama gari, ana inganta wasu tsawon ra'ayi don takamaiman aikace-aikace, kamar tsayin ra'ayi mai aminci ga ido ko takamaiman layukan sha don firikwensin iskar gas. Haɗin kai: Akwai al'adar haɗa mai fitarwa tare da direba IC ko ma tare da mai ganowa a cikin na'ura ɗaya, yana sauƙaƙe ƙirar tsarin don masu amfani na ƙarshe.°C for 6 seconds, measured 1.6mm (.063") from the body. This is a critical parameter for assembly.

• Wave/Hand Soldering:Adhere strictly to the 260°C/6s limit. Preheating is recommended to minimize thermal shock.
• Reflow Soldering:While not explicitly mentioned for SMD, the temperature profile should ensure the package body temperature does not exceed the storage maximum of 85°C for extended periods, and the lead temperature at the specified point must not exceed 260°C.
• Storage Conditions:Store in a dry, anti-static environment within the specified temperature range (-40°C to +85°C) to prevent moisture absorption and degradation.

. Application Suggestions

.1 Typical Application Scenarios

• Infrared Data Transmission (IrDA):Its high speed makes it suitable for serial data links.
• Remote Controls:High power ensures long range and reliable operation.
• Optical Switches & Object Detection:Used in conjunction with a photodetector to sense presence, position, or counting.
• Industrial Safety Curtains:Creating an invisible beam barrier for machine guarding.
• Night Vision Illumination:For CCTV cameras with IR sensitivity.

.2 Design Considerations

• Driver Circuit:Always use a series current-limiting resistor or a constant-current driver. Calculate based on the forward voltage (V_F) at the desired operating current (I_F).
• Heat Management:For continuous operation near the maximum current, consider the power dissipation (P_D= V_F* I_F) and ensure adequate heatsinking if necessary to keep the junction temperature within limits.
• Pulsed Operation:For the 1A peak pulse current, ensure the driver can deliver the required high current pulse with a fast rise/fall time to leverage the high-speed capability.
• Optical Design:Use lenses or reflectors to shape the 50° beam according to the application need (e.g., narrow for long range, wide for area coverage).
• Detector Matching:Pair with a photodetector (e.g., phototransistor, photodiode) whose peak spectral sensitivity is around 850 nm for optimal performance.

. Technical Comparison & Differentiation

The LTE-3276 differentiates itself in the market through its specific combination of parameters:

• High Power at Moderate Current: mW/sr at 50mA is a strong output, beneficial for applications requiring good signal-to-noise ratio.
• High-Speed Capability:The specification for pulse operation implies a fast intrinsic response time, suitable for modulated signals.
• Robust Construction:The wide operating temperature range and clear package indicate design for reliability.
• Compared to standard low-power IR LEDs, this device offers significantly higher radiant intensity. Compared to laser diodes, it is safer (eye-safe in this power class), has a wider beam, and is generally more robust and easier to drive.

. Frequently Asked Questions (Based on Technical Parameters)

Q: Can I drive this LED directly from a 5V microcontroller pin?

A: No. You must use a current-limiting resistor. For example, to drive at I_F=50mA with a V_Fof ~1.5V from a 5V supply: R = (5V - 1.5V) / 0.05A = 70 Ohms. Use a 68 or 75 Ohm resistor and check the power rating (P = I²R = 0.175W, so a 1/4W resistor is sufficient).

Q: What is the difference between Radiant Intensity (mW/sr) and Aperture Radiant Incidence (mW/cm²)?

A: Radiant Intensity is the power emitted per unit solid angle (steradian), describing the source's directional strength. Aperture Radiant Incidence is the power density (mW per cm²) arriving at a detector's surface at a specified distance and alignment. The latter depends on the former and the distance/inverse-square law.

Q: How do I use it in pulsed mode?

A: Use a transistor (BJT or MOSFET) switch controlled by your logic signal to pulse the LED. Ensure the driver can source the high peak current (up to 1A) with fast switching. The average current must still respect the continuous current rating (100mA) when considering duty cycle.

Q: Why does the output decrease with temperature?

A> This is a fundamental characteristic of semiconductor LEDs. Increased temperature increases non-radiative recombination processes within the semiconductor material, reducing the internal quantum efficiency and thus the light output.

. Practical Design Case

Case: Designing a Long-Range Infrared Object Detection Sensor.

Goal: Detect an object at 5 meters.

Design Steps:

1. Emitter Drive:Operate the LTE-3276 at I_F=50mA (pulsed at 1kHz, 50% duty cycle) to achieve high peak intensity (32 mW/sr) while keeping average power manageable.

2. Optics:Add a simple collimating lens in front of the emitter to narrow the 50° beam to a more focused ~10° beam, significantly increasing intensity at a distance.

3. Detector:Use a matched silicon phototransistor with a peak response at 850nm. Place a narrow-bandpass optical filter (centered at 850nm) in front of it to reject ambient light.

4. Circuit:The receiver circuit amplifies the small photocurrent. Use synchronous detection (modulating the emitter and tuning the receiver to the same frequency) to reject DC ambient light and low-frequency noise, greatly improving range and reliability.

This setup leverages the LTE-3276's high power and speed for a robust, interference-immune detection system.

. Operating Principle Introduction

An infrared emitter like the LTE-3276 is a light-emitting diode (LED) based on semiconductor physics. When a forward voltage is applied across the p-n junction, electrons and holes are injected into the active region. When these charge carriers recombine, they release energy. In this specific device, the semiconductor material (typically based on Aluminum Gallium Arsenide - AlGaAs) is engineered so that this energy is released as photons in the infrared spectrum, with a peak wavelength of 850 nanometers. The "clear transparent" epoxy package is doped to be transparent to this wavelength, allowing the photons to escape efficiently. The "high speed" characteristic refers to the fast turn-on and turn-off times of this recombination process, enabling the LED to be modulated at high frequencies for data transmission.

. Technology Trends

Infrared emitter technology continues to evolve alongside broader optoelectronic trends. Key developments include:

Increased Power Efficiency:Research focuses on improving the internal quantum efficiency (more photons per electron) and the light extraction efficiency from the package, leading to higher radiant intensity for the same electrical input power.

Smaller Form Factors:The drive towards miniaturization pushes for surface-mount device (SMD) packages with similar or better performance than traditional through-hole types.

Enhanced Speed:For communication applications, devices are being developed with even faster modulation bandwidths to support higher data rates.

Wavelength Diversification:While 850nm and 940nm are common, other wavelengths are being optimized for specific applications, such as eye-safe longer wavelengths or specific absorption lines for gas sensing.

Integration:There is a trend towards integrating the emitter with a driver IC or even with a detector in a single module, simplifying system design for end-users.