IR Emitter and Detector LTE-C216-P-W Datasheet - 1206 Package (3.2x1.6x1.1mm) - Peak Wavelength 850nm - Forward Voltage 1.4V - Power Dissipation 100mW - English Technical Document

1. Product Overview

This document details the specifications for a discrete infrared (IR) emitter and detector component. This device is designed for applications requiring reliable infrared signal transmission and reception. It combines an infrared emitting diode (IRED) and a sensing element within a single, compact surface-mount package. The core technology is based on Gallium Arsenide (GaAs) and Aluminum Gallium Arsenide (AlGaAs) materials, optimized for operation at a peak wavelength of 850 nanometers. This wavelength is commonly used in consumer electronics and data transmission due to its good balance between performance and component availability.

The primary design goals are to provide a solution featuring high radiant intensity, good speed characteristics, and a wide viewing angle to facilitate alignment and signal capture. The component is packaged in a standard 1206 footprint, making it compatible with automated pick-and-place assembly lines and standard infrared reflow soldering processes. It is classified as a RoHS-compliant and Green product.

1.1 Key Features and Applications

Na'urar ta ƙunshi siffofi da yawa waɗanda suka sa ta dace da masana'antar kera lantarki ta zamani:

• Bin ka'idojin RoHS da Green Product.
• An tattara shi a cikin kaset 8mm akan reels diamita 7-inch don haɗawa ta atomatik.
• Ya dace da kayan aikin sanyawa ta atomatik.
• An ƙera shi don jurewa daidaitattun bayanan sayar da infrared reflow.
• Ya yi daidai da daidaitattun girma na kunshin EIA.
• Yana fitar da haske a tsayin raƙuman (λp) na 850nm.
• Yana amfani da na'urar haɗawa ta saman (SMD) 1206 na gama-gari.

Aikace-aikacen yau da kullun na wannan kayan haɗin sun haɗa da, amma ba'a iyakance su ga:

• Mai fitar da infrared don na'urori masu sarrafa nesa (misali, don TV, tsarin sauti).
• Na'urar gano infrared da aka haɗa a kan PCB don gano kusanci, gano abu, ko karɓar bayanai.
• Hanyoyin watsa bayanai ta infrared mara waya don sadarwa ta ɗan gajeren zango.
• Tsarin ƙararrawar tsaro ta amfani da katakon IR.

2. Technical Specifications Deep Dive

Wannan sashe yana ba da cikakken bincike na haƙiƙa game da halayen lantarki, na gani, da na zafi na na'urar. Duk ma'auni an ƙayyade su a yanayin zafin muhalli (TA) na 25°C sai dai idan an faɗi akasin haka.

2.1 Absolute Maximum Ratings

Waɗannan ma'auni suna ayyana iyakokin da wucewarsu zai iya haifar da lalacewa ta dindindin ga na'urar. Ba a ba da garantin aiki a ƙarƙashin ko a waɗannan yanayi kuma ya kamata a guje su a cikin ƙirar da aka dogara da ita.

• Rarrabawar Wutar Lantarki (Pd): 100 mW. Wannan shine matsakaicin jimlar wutar lantarki da fakiti zai iya watsawa azaman zafi.
• Peak Forward Current (IFP): 800 mA. Wannan shine matsakaicin ƙarfin igiyar ruwa mai ƙarfi da aka ba da izini, wanda aka ƙayyade a ƙarƙashin yanayin bugun jini 300 a kowace daƙiƙa tare da faɗin bugun jini na microsecond 10.
• DC Forward Current (IF): 60 mA. Wannan shine matsakaicin ci gaba mai ci gaba na yanzu don aiki mai tsayi.
• Reverse Voltage (VR): 5 V. Matsakaicin ƙarfin wutar lantarki da za a iya amfani da shi a cikin juzu'in baya a cikin IRED.
• Operating Temperature Range: -40°C to +85°C. The ambient temperature range over which the device is designed to function.
• Storage Temperature Range: -55°C to +100°C. The temperature range for non-operational storage.
• Infrared Soldering Condition: Maximum of 260°C for 10 seconds. This defines the peak reflow temperature limit for lead-free soldering processes.

2.2 Electrical and Optical Characteristics

These are the typical performance parameters under normal operating conditions. Designers should use the typical (Typ.) or maximum (Max.) values as appropriate for their circuit calculations.

• Radiant Intensity (IE): 3.0 mW/sr (Typ.) a lokacin da ake gudanar da wutar lantarki (IF) na 20mA. Wannan yana auna ƙarfin hasken da ake fitarwa a kowace raka'a mai ƙarfi a kan axis.
• Peak Emission Wavelength (λPeak): 850 nm (Typ.). Tsawon zango inda ƙarfin fitarwa na gani ya fi girma.
• Spectral Line Half-Width (Δλ): 50 nm (Typ.). Tsawon zango wanda ƙarfin da ake fitarwa ya kai aƙalla rabin ƙarfin kololuwa, yana nuna tsaftar bakan.
• Forward Voltage (VF): 1.4 V (Typ.), 1.8 V (Max.) a IF=20mA. Faɗuwar wutar lantarki a kan IRED lokacin da ake gudanar da ita.
• Reverse Current (IR): 10 μA (Max.) a lokacin ƙarfin baya (VR) na 5V. Ƙaramin ruwan ɗigon da ke fitowa lokacin da na'urar ke da ƙarfin baya.
• Rise/Fall Time (Tr/Tf): 20 nS (Typ.). Lokacin da fitowar haske ta tashi daga 10% zuwa 90% (ko faɗuwa daga 90% zuwa 10%) na ƙimar ƙarshe, yana nuna saurin canzawa.
• Viewing Angle (2θ1/2): Digiri 100 (Typ.). Cikakken kusurwar da ƙarfin haske ya rabi rabin ƙarfin da ke kan axis. Kusurwa mafi faɗi yana sa daidaitawa tsakanin mai fitarwa da mai gano ya zama mafi sauƙi.

3. Performance Curve Analysis

Takardar bayanai tana ba da lanƙwasai na halaye da yawa waɗanda ke da mahimmanci don fahimtar halayen na'urar a ƙarƙashin yanayi daban-daban. Waɗannan jadawalin suna ba masu ƙira damar ƙididdige aikin fiye da ƙayyadaddun ma'auni guda ɗaya.

3.1 Spectral Distribution

Juyin rarraba spectral yana nuna ƙarfin haske mai dangi a matsayin aikin tsawon zango. Ga wannan na'urar, juyin yana tsakiya a kusa da 850nm tare da ƙayyadadden rabin faɗin 50nm. Wannan bayanin yana da mahimmanci don zaɓar masu tacewa na gani masu dacewa don gefen mai ganowa don ƙin hayaniyar hasken muhalli.

3.2 Forward Current vs. Forward Voltage (I-V Curve)

Wannan juyi yana kwatanta alaƙar da ba ta layi tsakanin halin yanzu ta hanyar IRED da ƙarfin lantarki a cikinta. Yana nuna ƙarfin lantarki na kunna na yau da kullun da yadda VF ke ƙaruwa tare da IF. Masu ƙira suna amfani da wannan don ƙididdige ƙimar resistor na jerin da ake buƙata don iyakance halin yanzu lokacin da aka motsa daga tushen wutar lantarki.

3.3 Forward Current vs. Ambient Temperature

Wannan jadawalin yana nuna yadda matsakaicin halin yanzu na DC na gaba ke raguwa yayin da yanayin yanayi ya ƙaru. Don tabbatar da amincin, dole ne a rage halin yanzu na aiki a yanayin zafi mafi girma don kiyaye yanayin haɗin gwiwa da raguwar wutar lantarki cikin iyakoki masu aminci.

3.4 Relative Radiant Intensity vs. Ambient Temperature

This curve shows the dependence of optical output power on temperature. Typically, the radiant intensity decreases as the junction temperature rises. This characteristic must be accounted for in applications requiring stable optical output over a wide temperature range.

3.5 Relative Radiant Intensity vs. Forward Current

This is a key curve showing the optical output power as a function of drive current. It is generally linear over a significant range but may saturate at very high currents. Designers use this to determine the required drive current to achieve a specific signal strength.

3.6 Radiation Pattern Diagram

A polar plot depicting the spatial distribution of emitted light. The diagram confirms the wide 100-degree viewing angle, showing how intensity diminishes at angles off the central axis. This pattern is crucial for designing the optical path and alignment in a system.

4. Mechanical and Packaging Information

4.1 Outline and Package Dimensions

The device uses a standard 1206 SMD package. Key dimensions include a body length of approximately 3.2mm, a width of 1.6mm, and a height of 1.1mm. The datasheet provides a detailed dimensional drawing with tolerances typically at ±0.1mm. The cathode is typically indicated by a marking or a specific pad geometry.

4.2 Suggested Soldering Pad Layout

A recommended land pattern (footprint) for PCB design is provided. This includes the pad dimensions, spacing, and shape to ensure a reliable solder joint during reflow while minimizing the risk of tombstoning or solder bridging. Adhering to these recommendations is important for manufacturing yield.

4.3 Tape and Reel Packaging Specifications

The components are supplied in embossed carrier tape wound on 7-inch (178mm) diameter reels. Key tape dimensions include pocket pitch, pocket size, and tape width. Each reel contains 3000 pieces. The packaging conforms to ANSI/EIA 481-1-A-1994 standards, ensuring compatibility with standard automated feeders.

5. Assembly, Handling, and Application Guidelines

5.1 Soldering and Reflow Process

The device is compatible with infrared reflow soldering processes. A detailed reflow temperature profile is suggested, compliant with JEDEC standards for lead-free assembly. Key parameters include:

• Pre-heat: 150-200°C for up to 120 seconds maximum.
• Peak Temperature: 260°C maximum.
• Time Above Liquidus: The component should not be exposed to temperatures above 260°C for more than 10 seconds, and reflow should not be performed more than twice.

For hand soldering with an iron, the recommendation is a maximum tip temperature of 300°C for no more than 3 seconds per joint. It is emphasized that the optimal profile depends on the specific PCB design, solder paste, and oven, so process characterization is necessary.

5.2 Storage and Moisture Sensitivity

The components are moisture-sensitive. In their original sealed moisture-proof bag with desiccant, they should be stored at ≤30°C and ≤90% Relative Humidity (RH) and used within one year. Once the bag is opened, the storage environment must not exceed 30°C / 60% RH. Components removed from the original packaging should be reflowed within one week. For longer storage outside the original bag, they must be stored in a sealed container with desiccant or in a nitrogen desiccator. Components stored unpackaged for over a week require baking (e.g., at 60°C for 20 hours) before soldering to remove absorbed moisture and prevent "popcorning" during reflow.

5.3 Cleaning

Idan ana buƙatar tsarkakewa bayan siyar da guduma, kawai masu kaushi na tushen barasa kamar isopropyl alcohol (IPA) ne ya kamata a yi amfani da su. Ya kamata a guji masu tsabtace sinadarai masu tsauri ko masu ƙarfi saboda suna iya lalata ruwan tabarau na epoxy na fakitin.

5.4 Drive Method and Circuit Design

Muhimmin bayanin ƙira shine cewa LED na'ura ce mai aiki da ƙarfin lantarki. Lokacin tuƙi mai fitar da IR, resistor mai iyakancewar halin yanzu a jere ya zama dole lokacin amfani da tushen ƙarfin lantarki. Wannan resistor yana saita aikin halin yanzu (IF) zuwa ƙimar da ake so, wanda aka lissafta ta amfani da Dokar Ohm: R = (Vcc - VF) / IF. Bugu da ƙari, lokacin da aka haɗa masu fitarwa da yawa a layi daya, ya kamata a yi amfani da resistor mai iyakancewar halin yanzu daban don kowane na'ura don tabbatar da daidaiton ƙarfi, saboda ƙarfin lantarki na gaba (VF) na iya bambanta kaɗan daga na'ura zuwa na'ura.

5.5 Gargadin Aikace-aikace da Amfanin Da Ake Nufi

An yi nufin kayan aikin don kayan aikin lantarki na gaba ɗaya. Don aikace-aikacen da ke buƙatar amintacciyar aminci inda gazawar za ta iya haifar da haɗari ga rayuwa ko lafiya (misali, jiragen sama, likitanci, tsarin amincin sufuri), ana buƙatar tuntuba da cancanta na musamman, saboda waɗannan sun wuce iyakar daidaitattun ƙayyadaddun kasuwanci da aka bayar a cikin wannan takardar bayanan.

6. Kwatancen Fasaha da Abubuwan Zane

Compared to simple discrete IREDs or photodetectors, this integrated emitter-detector pair in a single package offers design simplification by ensuring matched optical characteristics and close physical proximity, which can be beneficial for reflective sensing. The 850nm wavelength is less visible to the human eye than 940nm, making it suitable for applications where a faint red glow is acceptable or even used as a status indicator. The 100-degree viewing angle is notably wide, reducing alignment precision requirements compared to narrower-beam devices.

Designers must carefully consider the trade-off between drive current, radiant intensity, and device lifetime/heat generation. Operating at or near the absolute maximum ratings for current or temperature will accelerate aging and reduce long-term reliability. Adequate PCB layout for heat dissipation, especially if operating at high duty cycles or elevated ambient temperatures, is recommended.

7. Tambayoyin da Ake Yawan Yi (Dangane da Ma'auni na Fasaha)

Q: Can I drive this IRED directly from a microcontroller GPIO pin?
A: No. A microcontroller pin typically cannot source 20-60mA safely. You must use the GPIO to control a transistor (e.g., MOSFET or BJT) that switches the higher current from a power supply, with a series resistor to set the exact current.

Q: What is the difference between peak wavelength (λp) and dominant wavelength (λd)?
A> Peak wavelength is the point of maximum spectral power. Dominant wavelength is derived from color perception on a chromaticity diagram and represents a single wavelength that matches the perceived color. For monochromatic IR devices, they are often very close.

Q: Ta yaya zan haɗu da ɓangaren gano wannan ɓangaren?
A> The datasheet primarily details the emitter characteristics. The detector (photodiode or phototransistor) will have its own set of parameters (dark current, responsivity, etc.) not fully listed here. Typically, the detector output is a small current proportional to received IR light, which is usually converted to a voltage using a transimpedance amplifier or a simple load resistor for digital threshold detection.

Q: Me yasa yanayin ɗanɗano na ajiya yake da mahimmanci sosai?
A> SMD packages can absorb moisture through the plastic molding compound. During the high heat of reflow soldering, this trapped moisture can vaporize rapidly, creating internal pressure that can crack the package or delaminate internal bonds—a failure known as "popcorning." The storage and baking guidelines prevent this.

8. Misalin Aikace-aikace na Aiki

Harka na Zane: Mai Sauƙin Ganowa na Kusa/ToShewa
A common use is a beam-break sensor. The emitter is driven with a pulsed current (e.g., 20mA pulses at 38kHz) to distinguish its signal from ambient IR. The detector, placed a short distance away, receives this signal. When an object interrupts the beam, the received signal drops. The detector's output is fed into a demodulating receiver IC or a microcontroller with filtering logic to detect the absence of the carrier frequency, triggering an output. The wide viewing angle simplifies aligning the emitter and detector on opposite sides of the path being monitored.

9. Ka'idar Aiki

The device operates on fundamental optoelectronic principles. The emitter is an Infrared Emitting Diode (IRED). When forward-biased, electrons and holes recombine in the semiconductor's active region (GaAs/AlGaAs), releasing energy in the form of photons. The material's bandgap determines the photon energy and thus the wavelength, which is 850nm in this case. The detector is typically a photodiode or phototransistor made of silicon. When photons with sufficient energy (wavelengths typically up to ~1100nm for silicon) strike the detector's depletion region, they generate electron-hole pairs. In a photodiode, this creates a photocurrent when reverse-biased. In a phototransistor, the photocurrent acts as a base current, causing a larger collector current to flow, providing internal gain.

10. Trends na Fasaha

A cikin fagen na'urorin infrared na keɓaɓɓu, abubuwan da ke faruwa sun haɗa da haɓaka na'urori tare da mafi girman ƙarfin fitarwa don tsawon kewayon, ingantacciyar saurin don saurin watsa bayanai, da ingantaccen tacewa na bakan watsa shiri da aka haɗa cikin kunshin na'urar ganowa don cimma mafi girman rabon sigina zuwa amo a cikin yanayi mai ƙarfin hasken muhalli. Hakanan akwai yunƙurin ƙanƙanta fiye da kunshin 1206 (misali, 0805, 0603) don adana sararin allo, ko da yake sau da yawa a kan farashin ƙarfin gani ko kusurwar kallo. Ƙoƙarin samun mafi girman aminci da aiki a aikace-aikacen mota da masana'antu yana ci gaba da turawa haɓaka abubuwan da ke da mafi faɗin kewayon zafin aiki da ƙarin ƙarfi.