ITR20002 Photointerrupter Datasheet - Tsarin Fuska a gefe - Tsawon Tsawon 940nm - Takardar Fasaha ta Hausa

1. Bayanin Samfur ITR20002 ƙaramin na'ura ce mai katse hoto ta infrared a gefe. Tana haɗa diode mai fitar da infrared da NPN silicon phototransistor waɗanda aka ɗora a gefe da juna akan madaidaicin axis na gani a cikin ginin thermoplastic baƙar fata. An tsara wannan tsari don gano abu, gano matsayi, da aikace-aikacen sauyawa ba tare da taɓawa ba ta hanyar katse hanyar hasken infrared tsakanin mai fitarwa da mai gano.

1.1 Siffofi da Fa'idodi na Asali Saurin Lokacin Amsa: Yana ba da damar gano sauri da sauyawa, ya dace da aikace-aikace masu sauri. Babban Hankali: Phototransistor na silicon yana ba da ingantaccen gano siginar daga mai fitar da IR. Ƙayyadaddun Tsawon Tsawon Yanka: Matsakaicin tsawon tsawon fitarwa (λp) na 940nm, an inganta shi don gano infrared yayin rage tsangwama daga hasken da ake iya gani. Daidaitawar Muhalli: Samfurin ba shi da gubar, ya bi ka'idojin RoHS, EU REACH, da Halogen-Free (Br <900ppm, Cl <900ppm, Br+Cl <1500ppm). Madaidaicin Axis na Gani: Zanen gefe da juna, madaidaicin axis yana sauƙaƙa daidaitawa don gano abu a cikin tazarar tsakanin abubuwan.

1.2 Aikace-aikacen Manufa An tsara na'urar don ɗimbin ayyukan gano haske, ciki har da: Makanikai na linzamin kwamfuta da na kwafi don gano motsi ko kasancewar takarda. Na'urorin faifai masu laushi don gano shigar faifai ko matsayin waƙa. Sauyawa ba tare da taɓawa ba na gabaɗaya. Ɗora kai tsaye akan allunan da'ira (PCBs).

• 2. Zurfin Binciken Ma'auni na Fasaha Wannan sashe yana ba da cikakken fassara, mai ma'ana na mahimman ma'auni na lantarki da na gani da aka ƙayyade a cikin takardar bayanan.2.1 Matsakaicin Matsakaicin Ma'auni Waɗannan ma'auni suna ayyana iyakokin da za su iya haifar da lalacewa na dindindin ga na'urar. Ba a ba da garantin aiki a ƙarƙashin waɗannan sharuɗɗan ba. Shigarwa (IR LED): Rashin ƙarfi (Pd): 100 mW a 25°C. Ana buƙatar rage daraja a yanayin zafi mafi girma. Ƙarfafan Juyawa (VR): 5 V. Wuce wannan na iya rushe haɗin LED. Gaba Gaba (IF): 60 mA ci gaba. Matsakaicin Gaba Gaba (IFP): 1 A don bugun jini ≤100μs a cikin aikin aiki na 1%. Wannan yana ba da damar ɗan gajeren lokaci, bugun jini mai ƙarfi. Fitarwa (Phototransistor): Rashin ƙarfin Taro (Pc): 80 mW. Wannan yana iyakance haɗin igiyar taro da ƙarfin lantarki. Igiyar Taro (IC): 20 mA matsakaicin igiyar ci gaba. Ƙarfin Lantarki Taro-Emitter (BVCEO): 35 V. Matsakaicin ƙarfin lantarki da za a iya amfani da shi a kan transistor lokacin da tushe ya buɗe. Ƙarfin Lantarki Emitter-Taro (BVCBO): 6 V. Matsakaicin ƙarfin lantarki na juyawa a kan mai fitarwa da taro. Ma'auni na Thermal: Yanayin Aiki (Topr): -25°C zuwa +85°C. Yanayin Ajiya (Tstg): -40°C zuwa +85°C. Zafin Solder na Jagora (Tsol): 260°C na dakika 5 a inci 1/16 (1.6mm) daga jikin kunshin.
• 2.2 Halayen Lantarki da Hasken (Ta=25°C) Waɗannan su ne ma'auni na yau da kullun na aiki a ƙarƙashin ƙayyadaddun yanayin gwaji. Halayen Shigarwa (IR LED): Ƙarfin Lantarki na Gaba (VF): Yawanci 1.2V zuwa 1.5V a IF=20mA. Wannan yana da mahimmanci don ƙirar da'irar direba mai iyakance igiyar. Matsakaicin Tsawon Tsawon (λp): 940nm. Wannan shine tsawon tsawon da IR LED ke fitar da mafi ƙarfin haske. Halayen Fitarwa (Phototransistor): Igiyar Duhu (ID): Matsakaicin 100 nA a VCE=20V ba tare da haske ba (E=0). Wannan shine igiyar ɓarna wanda ke ayyana "kashe" matakin amo. Ƙarfin Lantarki Taro-Emitter Saturation (VCE(sat)): Matsakaicin 0.4V a IC=0.04mA da IF=40mA. Ƙaramin VCE(sat) yana da kyau lokacin da aka yi amfani da transistor azaman maɓalli. Igiyar Taro (IC(ON)): Ya bambanta daga 0.04mA zuwa 0.9mA a VCE=5V da IF=20mA. Wannan ma'auni, halayen canja wuri, yana ayyana hankalin mai haɗawa. Faɗin kewayon yana nuna cewa ma'auni ne mai mahimmanci wanda za'a iya sanya shi cikin kwandon shara. Lokacin Tashi/Faɗuwa (tr/tf): Yawanci 20μs da 25μs bi da bi, a ƙarƙashin ƙayyadaddun yanayin gwaji (VCC=2V, IC=100μA, RL=100Ω). Waɗannan ƙimomi suna ƙayyade matsakaicin mitar sauyawa na na'urar.3. Binciken Lanƙwan Aiki Takardar bayanan tana nuni zuwa lanƙwan halaye na yau da kullun na duka mai fitar da IR da phototransistor. Duk da yake ba a sake yin ainihin zane-zanen a nan ba, an bayyana mahimmancinsu. 3.1 Lanƙwan Mai Fitad da IR Waɗannan lanƙwan yawanci suna nuna alaƙar tsakanin igiyar gaba (IF) da ƙarfin lantarki na gaba (VF) a yanayin zafi daban-daban, suna nuna ƙimar zafi mara kyau na VF. Hakanan suna iya nuna ƙarfin haske na dangi da igiyar gaba da tsarin bazuwar kusurwa, wanda ke da mahimmanci don fahimtar bazuwar haske a cikin kunshin kallon gefe. 3.2 Lanƙwan Phototransistor Waɗannan lanƙwan suna da mahimmanci don ƙirar da'ira. Yawanci sun haɗa da: Igiyar Taro da Ƙarfin Lantarki Taro-Emitter (IC-VCE): Iyalin lanƙwan don matakan haske daban-daban (ko igiyoyin IR LED daban-daban). Wannan yana nuna halayen fitarwa na transistor kuma yana taimakawa wajen tantance layin kaya. Igiyar Taro da Irradiance (ko IF): Wannan lanƙwan canja wuri yana ƙididdige hankali, yana nuna nawa igiyar fitarwa aka samar don ƙayyadadden matakin haske na shigarwa. Igiyar Duhu da Zazzabi: Yana nuna yadda igiyar ɓarna ke ƙaruwa tare da zafin jiki, wanda zai iya shafar rabo na siginar zuwa amo a cikin yanayin zafi mai girma.
• 4. Bayanin Injiniya da Kunshin 4.1 Girman Kunshin ITR20002 ta zo a cikin daidaitaccen kunshin kallon gefe, ta hanyar rami. Zanen girma a cikin takardar bayanan yana ba da ma'auni masu mahimmanci don shimfidar PCB da haɗin injiniya. Siffofi masu mahimmanci sun haɗa da tazarar jagora, girman jikin kunshin, da wurin buɗe ido na gani. Bayanin ya ƙayyade cewa ƙimar ƙima ±0.25mm sai dai idan an faɗi akasin haka akan zanen da aka auna. 4.2 Gano Polarity Don kunshin ta hanyar rami, yawanci ana nuna polarity ta hanyar siffar jikin kunshin (lebur ko tsaga) ko ta tsayin jagororin. Zanen takardar bayanan ya kamata ya yi alama a sarari anode da cathode na IR LED da taro da mai fitarwa na phototransistor. Daidai polarity yana da mahimmanci don aikin na'urar da kuma hana lalacewa.5. Jagororin Aikace-aikace da Zane 5.1 Da'irar Aikace-aikace na Al'ada Aikace-aikace na asali ya haɗa da tuka IR LED tare da resistor mai iyakance igiyar da aka haɗa zuwa tushen ƙarfin lantarki. Phototransistor yawanci ana haɗa shi a cikin tsarin mai fitarwa na gama-gari: ana ja taro zuwa ƙarfin lantarki ta hanyar resistor kaya (RL), kuma mai fitarwa yana ƙasa. Ana ɗaukar siginar fitarwa daga taro. Ƙimar RL tana shafar motsin ƙarfin lantarki na fitarwa, sauri, da amfani da igiyar. Ƙaramin RL yana ba da saurin sauyawa amma ƙaramin motsi na ƙarfin lantarki; babban RL yana ba da babban motsi amma saurin amsa. 5.2 Abubuwan Tunani na Zane Daidaitawa: Zanen gefe da juna, madaidaicin axis yana nufin yankin gano mai hankali yana cikin tazarar tsakanin mai fitarwa da mai gano. Daidaitaccen daidaitawar injiniya na hanyar abu yana da mahimmanci don aiki mai aminci. Kariya daga Hasken Muhalli: Duk da yake tace 940nm a cikin ginin yana taimakawa, ƙaƙƙarfan tushen IR na muhalli (hasken rana, ƙwan fitila) na iya cika phototransistor. Yin amfani da siginar IR da aka daidaita da gano aiki tare zai iya inganta kariya sosai. Tukin Igiyar: Yi aiki da IR LED a ko ƙasa da shawarar IF (misali, 20mA) don dogon lokaci aminci. Bugun LED a babban igiyar (a cikin iyakokin IFP) zai iya ƙara kewayon gano ko ƙarfin siginar. Mahaɗin Fitarwa: Ana iya ciyar da fitarwar phototransistor kai tsaye cikin shigarwar dijital na microcontroller (tare da ja-da-gora da ya dace) ko cikin kwatancen don ingantaccen gano bakin kofa a aikace-aikacen analog.
• 6. Bayanin Kunshin da Oda 6.1 Ƙayyadaddun Lakabi Lakabin samfurin yana ƙunshe da lambobi da yawa: CPN: Lambar Sashen Abokin Ciniki. P/N: Lambar Samfurin Masana'anta (ITR20002). QTY: Adadin a cikin kunshin. CAT / HUE / REF: Waɗannan suna iya nufin lambobin binning na ciki don ma'auni kamar ƙarfin haske (CAT), tsawon tsawon rinjaye (HUE), da ƙarfin lantarki na gaba (REF). LOT No: Lambar lot na gano asali. 6.2 Ƙayyadaddun Tattarawa Daidaitaccen tattarawa shine guda 150 a kowace jaka, jakuna 5 a kowace akwati, da akwatuna 10 a kowace akwati. Wannan bayanin yana da mahimmanci don tsarin kayan aiki da ciyar da layin samarwa.7. Kwatancen Fasaha da Matsayi ITR20002 tana wakiltar ingantaccen mafita, mai tsada don gano abu. Babban abin da ya bambanta shi ne takamaiman siffar injiniya ta kallon gefe da madaidaicin axis na gani, waɗanda aka tsara don gano abubuwan da ke wucewa ta wani rami ko tazara. Idan aka kwatanta da na'urori masu nunawa, tana ba da ingantaccen aminci da daidaito saboda ba ta dogara da yawan hasken abin da ake nufi ba. Idan aka kwatanta da na'urori masu watsawa tare da masu fitarwa da masu gano da aka yi adawa da su, tana ba da damar ƙirar injiniya mafi ƙanƙanta inda abu ya karya katako a cikin na'ura guda ɗaya. Tsawon tsawon 940nm ƙa'ida ce ta gama gari, tana ba da daidaitaccen ma'auni tsakanin samun abubuwan, farashi, da kin hasken muhalli.
• 8. Tambayoyin da ake yawan yi (FAQ) 8.1 Menene matsakaicin nisa ko tazarar gano? Takardar bayanan ta ƙayyade yanayin gwajin IC(ON) a matsayin "tare da mai nunawa a nesa 5mm." Wannan yana nuna cewa an inganta na'urar don gano ɗan gajeren zango, mai yiwuwa a cikin kewayon ƴan milimita. Ainihin tazarar da ake iya amfani da ita ya dogara da igiyar tuka zuwa IR LED, hankalin da'irar mai karɓa, da gefen siginar da ake buƙata. 8.2 Ta yaya zan kare na'urar daga sauye-sauyen lantarki? Ga IR LED, resistor na jerin guda ɗaya yawanci ya isa. Ga phototransistor da ke aiki a cikin yanayi mai hayaniya, yi la'akari da ƙara ƙaramin capacitor (misali, 1-10nF) a kan taro da mai fitarwa don tace hayaniyar mitar girma, tare da tunanin wannan zai rage saurin amsa. Don ƙaƙƙarfan yanayin masana'antu, ana iya buƙatar ƙarin diodes na damfara na waje ko diodes na TVS akan layukan shigarwa/fitarwa. 8.3 Shin zan iya amfani da wannan don gano saurin juyawa akan faifan rami mai juyawa? Ee, wannan aikace-aikace ne na gama gari. Matsakaicin mitar sauyawa zai iyakance ta lokutan tashi/faɗuwa (yawanci ~20-25μs), wanda a ka'idar yana ba da damar mitoci har zuwa kusan 20 kHz. A aikace, mitar zai zama ƙasa saboda ƙuntatawar da'ira da aikin aiki. Tabbatar cewa ramuka da tazara akan faifan sun isa don ba da damar phototransistor ya kunna da kashewa gaba ɗaya.9. Ka'idar Aiki ITR20002 tana aiki bisa ka'idar katse hasken da aka watsa. Diode mai fitar da infrared na ciki (IRED) yana da fifikon gaba, yana sa shi ya fitar da haske a matsakaicin tsawon tsawon 940nm. NPN silicon phototransistor, wanda aka sanya shi akan madaidaicin axis, yawanci yana karɓar wannan radiation lokacin da babu wani abu da ke toshe hanya. Photons masu isasshen ƙarfi suna buga yankin tushe na phototransistor, suna haifar da nau'ikan electron-ramu. Wannan igiyar hoto tana aiki azaman igiyar tushe, wanda aka ƙara haɓaka shi ta hanyar ribar igiyar transistor (beta), yana haifar da babban igiyar taro. Lokacin da aka sanya wani abu mara kyau a cikin tazarar tsakanin mai fitarwa da mai gano, an katse hanyar haske. Igiyar hoto ta daina, kuma transistor ya kashe, yana sa igiyar taro ta faɗi zuwa ƙima mai ƙasa sosai (igiyar duhu). Wannan canjin kunna/kashe a cikin igiyar taro yana ba da siginar dijital da ke nuna kasancewar ko rashin wani abu.

10. Bayanin Keɓewa da Bayanan Amincewa Bayanin da aka bayar a cikin wannan takardar fasaha ya dogara ne akan ainihin takardar bayanan. Manyan bayanan keɓewa da bayanai daga masana'anta sun haɗa da: Ƙayyadaddun bayanai da kayan suna iya canzawa. Samfurin ya cika ƙayyadaddun bayanai da aka buga na watanni 12 daga ranar jigilar kaya. Zane-zane da ƙimomi na yau da kullun don tunani ne kawai kuma ba a ba da garantin ba. Aiki a waje da Matsakaicin Matsakaicin Ma'auni na iya haifar da lalacewa ta dindindin. Ba a nufin samfurin don aikace-aikacen aminci mai mahimmanci, soja, jirgin sama, mota, likita, ko tallafin rai ba tare da izini bayyananne ba. Alhakin mai zane ne ya tabbatar da dacewar na'urar da aikin ta a cikin aikace-aikacen su na musamman.

The module is designed for a variety of optoelectronic sensing tasks, including:

• Mouse and copier mechanisms for detecting movement or paper presence.
• Floppy disk drives for sensing disk insertion or track position.
• General-purpose non-contact switching.
• Direct mounting on printed circuit boards (PCBs).

. Technical Parameter Deep-Dive

This section provides a detailed, objective interpretation of the key electrical and optical parameters specified in the datasheet.

.1 Absolute Maximum Ratings

These ratings define the limits beyond which permanent damage to the device may occur. Operation under these conditions is not guaranteed.

• Input (IR LED):
  • Power Dissipation (Pd): mW at 25°C. Derating is necessary at higher ambient temperatures.
  • Reverse Voltage (VR): V. Exceeding this can break down the LED junction.
  • Forward Current (IF): mA continuous.
  • Peak Forward Current (IFP): A for pulses ≤100μs at a 1% duty cycle. This allows for brief, high-intensity pulses.
• Output (Phototransistor):
  • Collector Power Dissipation (Pc): mW. This limits the combination of collector current and voltage.
  • Collector Current (IC): mA maximum continuous current.
  • Collector-Emitter Voltage (BV_CEO): V. The maximum voltage that can be applied across the transistor when the base is open.
  • Emitter-Collector Voltage (BV_ECO): V. The maximum reverse voltage across the emitter and collector.
• Thermal Ratings:
  • Operating Temperature (T_opr):-25°C to +85°C.
  • Storage Temperature (T_stg):-40°C to +85°C.
  • Lead Soldering Temperature (T_sol):°C for 5 seconds at 1/16 inch (1.6mm) from the package body.

.2 Electro-Optical Characteristics (Ta=25°C)

These are the typical operating parameters under specified test conditions.

• Input Characteristics (IR LED):
  • Forward Voltage (V_F):Typically 1.2V to 1.5V at I_F=20mA. This is important for designing the current-limiting driver circuit.
  • Peak Wavelength (λ_P):nm. This is the wavelength at which the IR LED emits the most optical power.
• Output Characteristics (Phototransistor):
  • Dark Current (I_CEO):Maximum 100 nA at V_CE=20V with no illumination (E_e=0). This is the leakage current that defines the "off" state noise floor.
  • Collector-Emitter Saturation Voltage (V_CE(sat)):Maximum 0.4V at I_C=0.04mA and I_F=40mA. A low V_CE(sat)is desirable when the transistor is used as a switch.
  • Collector Current (I_C(ON)):Ranges from 0.04mA to 0.9mA at V_CE=5V and I_F=20mA. This parameter, the transfer characteristic, defines the sensitivity of the coupler. The wide range indicates it is a critical parameter that may be binned.
  • Rise/Fall Time (t_r/t_f):Typical 20μs and 25μs respectively, under specific test conditions (V_CE=2V, I_C=100μA, R_L=100Ω). These values determine the maximum switching frequency of the device.

. Performance Curve Analysis

The datasheet references typical characteristic curves for both the IR emitter and the phototransistor. While the exact graphs are not reproduced here, their significance is explained.

.1 IR Emitter Curves

These curves typically illustrate the relationship between forward current (I_F) and forward voltage (V_F) at different temperatures, showing the negative temperature coefficient of V_F. They may also show relative radiant intensity vs. forward current and the angular radiation pattern, which is crucial for understanding the beam spread in the side-looking package.

.2 Phototransistor Curves

These curves are essential for circuit design. They typically include:

• Collector Current vs. Collector-Emitter Voltage (I_C-V_CE):Family of curves for different levels of irradiance (or different IR LED currents). This shows the transistor's output characteristics and helps determine the load line.
• Collector Current vs. Irradiance (or I_F):This transfer curve quantifies the sensitivity, showing how much output current is generated for a given input light level.
• Dark Current vs. Temperature:Shows how the leakage current increases with temperature, which can affect the signal-to-noise ratio in high-temperature environments.

. Mechanical and Package Information

.1 Package Dimensions

The ITR20002 comes in a standard side-looking, through-hole package. The dimensional drawing in the datasheet provides critical measurements for PCB layout and mechanical integration. Key features include the lead spacing, package body dimensions, and the location of the optical aperture. The note specifies that tolerances are ±0.25mm unless otherwise stated on the dimensioned drawing.

.2 Polarity Identification

For through-hole packages, polarity is typically indicated by the physical shape of the package (a flat or notch) or by the length of the leads. The datasheet drawing should clearly mark the anode and cathode of the IR LED and the collector and emitter of the phototransistor. Correct polarity is essential for device operation and to prevent damage.

. Application and Design Guidelines

.1 Typical Application Circuit

A basic application involves driving the IR LED with a current-limiting resistor connected to a voltage source. The phototransistor is typically connected in a common-emitter configuration: the collector is pulled up to a supply voltage through a load resistor (R_L), and the emitter is grounded. The output signal is taken from the collector. The value of R_Laffects the output voltage swing, speed, and current consumption. A smaller R_Lprovides faster switching but a smaller voltage swing; a larger R_Lgives a larger swing but slower response.

.2 Design Considerations

• Alignment:The side-by-side, converging axis design means the sensitive detection area is in the gap between the emitter and detector. Precise mechanical alignment of the object path is necessary for reliable operation.
• Ambient Light Immunity:While the 940nm filter in the housing helps, strong ambient IR sources (sunlight, incandescent bulbs) can saturate the phototransistor. Using a modulated IR signal and synchronous detection can greatly improve immunity.
• Current Drive:Operate the IR LED at or below the recommended I_F(e.g., 20mA) for long-term reliability. Pulsing the LED at a higher current (within I_FPlimits) can increase the sensing range or signal strength.
• Output Interface:The phototransistor output can be fed directly into a digital input of a microcontroller (with appropriate pull-up) or into a comparator for precise threshold detection in analog applications.

. Packaging and Ordering Information

.1 Label Specification

The product label contains several codes:

• CPN:Customer's Part Number.
• P/N:Manufacturer's Product Number (ITR20002).
• QTY:Quantity in the package.
• CAT / HUE / REF:These likely refer to internal binning codes for parameters like luminous intensity (CAT), dominant wavelength (HUE), and forward voltage (REF).
• LOT No:Traceability lot number.

.2 Packing Specification

The standard packing is 150 pieces per bag, 5 bags per box, and 10 boxes per carton. This information is vital for inventory planning and production line feeding.

. Technical Comparison and Positioning

The ITR20002 represents a classic, cost-effective solution for object detection. Its key differentiators are its specific side-looking mechanical form factor and converging optical axis, which are designed for detecting objects passing through a specific slot or gap. Compared to reflective sensors, it offers higher reliability and consistency as it is less dependent on the reflectivity of the target object. Compared to transmissive sensors with opposed emitters and detectors, it allows for a more compact mechanical design where the object breaks the beam within a single module. The 940nm wavelength is a common standard, offering a good balance between component availability, cost, and ambient light rejection.

. Frequently Asked Questions (FAQ)

.1 What is the typical sensing distance or gap?

The datasheet specifies the I_C(ON)test condition as "with reflector in 5mm away." This suggests the device is optimized for very short-range detection, likely in the range of a few millimeters. The actual usable gap depends on the drive current to the IR LED, the sensitivity of the receiver circuit, and the required signal margin.

.2 How do I protect the device from electrical transients?

For the IR LED, a simple series resistor is usually sufficient. For the phototransistor operating in noisy environments, consider adding a small capacitor (e.g., 1-10nF) across the collector and emitter to filter high-frequency noise, keeping in mind this will slow the response time. For harsh industrial environments, additional external clamping diodes or TVS diodes may be required on the input/output lines.

.3 Can I use this for speed sensing on a rotating slotted disk?

Yes, this is a common application. The maximum switching frequency will be limited by the rise/fall times (typically ~20-25μs), which theoretically allows frequencies up to roughly 20 kHz. In practice, the frequency will be lower due to circuit and duty cycle constraints. Ensure the slots and gaps on the disk are wide enough to allow the phototransistor to fully switch on and off.

. Operational Principle

The ITR20002 operates on the principle of transmitted light interruption. The internal infrared emitting diode (IRED) is forward-biased, causing it to emit light at a peak wavelength of 940nm. The NPN silicon phototransistor, positioned on a converging axis, normally receives this radiation when nothing obstructs the path. Photons with sufficient energy strike the base region of the phototransistor, generating electron-hole pairs. This photocurrent acts as a base current, which is then amplified by the transistor's current gain (beta), resulting in a much larger collector current. When an opaque object is placed in the gap between the emitter and detector, the light path is interrupted. The photocurrent ceases, and the transistor turns off, causing the collector current to drop to a very low value (the dark current). This on/off change in collector current provides a digital signal indicating the presence or absence of an object.

. Disclaimer and Reliability Notes

The information provided in this technical document is based on the original datasheet. Key disclaimers and notes from the manufacturer include:

• Specifications and materials are subject to change.
• The product meets published specifications for 12 months from the date of shipment.
• Graphs and typical values are for reference only and are not guaranteed.
• Operation outside the Absolute Maximum Ratings can cause permanent damage.
• The product is not intended for safety-critical, military, aviation, automotive, medical, or life-support applications without explicit authorization.

It is the responsibility of the designer to validate the device's suitability and performance in their specific application.