SMD LED LTST-C950KGKT-5A Datasheet - Green AlInGaP - 5V Reverse Voltage - 75mW Power - Technical Documentation

1. Product Overview

This document details the specifications of a high-performance surface-mount LED designed for modern electronic applications. The device utilizes advanced AlInGaP semiconductor material to produce bright green light output. It is encapsulated in a compact, industry-standard package suitable for automated assembly processes including pick-and-place machines and infrared (IR) reflow soldering. This LED is classified as an environmentally friendly product and complies with relevant environmental directives.

1.1 Core Advantages and Target Market

The primary advantages of this LED lie in its ultra-high luminous intensity achieved through AlInGaP chip technology, and its robust structure suitable for high-volume manufacturing. Key features contributing to its reliability include compatibility with automatic placement equipment and infrared reflow soldering processes. This makes it an ideal component for consumer electronics, industrial indicator lights, automotive interior lighting, and general status indication or backlighting applications requiring stable, bright green indication.

2. In-depth Technical Parameter Analysis

Electrical and optical characteristics define the operating boundaries and performance of the LED. Understanding these parameters is crucial for proper circuit design and ensuring long-term reliability.

2.1 Absolute Maximum Ratings

These ratings specify the limiting conditions that may cause permanent damage to the device and are not intended for normal operating conditions.

• Power Dissipation (Pd):75 mW. This is the maximum heat power that the LED package can dissipate when the ambient temperature (Ta) is 25°C.
• Peak Forward Current (I_FP):80 mA. This current can be applied under pulse conditions (1/10 duty cycle, 0.1ms pulse width) but must not exceed this value.
• DC Forward Current (I_F):30 mA. This is the maximum continuous forward current recommended for reliable operation.
• Reverse Voltage (V_R):5 V. Applying a reverse voltage higher than this value may break down the PN junction of the LED.
• Operating Temperature Range:-30°C to +85°C. The device is guaranteed to operate normally within this ambient temperature range.
• Storage Temperature Range:-40°C to +85°C.

2.2 Electro-Optical Characteristics

These parameters are measured under standard test conditions (Ta=25°C, I_F=5mA) and represent typical performance.

• Luminous Intensity (I_V):112.0 - 450.0 mcd. The light output is binned, providing minimum and typical values. The actual value depends on the specific bin code.
• Perspective (2θ_1/2):25 degrees. This is the full angle at which the luminous intensity is half of the axial (0 degrees) measurement. A 25-degree angle indicates a relatively concentrated beam.
• Peak Emission Wavelength (λ_P):574.0 nm. This is the wavelength at which the spectral power distribution of the emitted light reaches its maximum value.
• Dominant Wavelength (λ_d):564.5 - 573.5 nm. This is the single wavelength perceived by the human eye that defines the LED's color (green), derived from the CIE chromaticity diagram.
• Spectral Line Half-Width (Δλ):15 nm. This parameter indicates the spectral purity of the light; a smaller value means the output light is closer to monochromatic.
• Forward Voltage (V_F):1.6 - 2.2 V. Voltage drop across the LED when a current of 5mA flows through it. This value is also binned.
• Reverse Current (I_R):10 μA (max). The small leakage current that flows when the maximum reverse voltage (5V) is applied.

3. Binning System Description

To ensure consistency in mass production, LEDs are sorted into different bins based on key parameters. This allows designers to select components that meet the color and electrical characteristic requirements of specific applications.

3.1 Forward Voltage Binning

Bins are defined from Code 1 to Code 6, each covering a 0.1V range between 1.60V and 2.20V at 5mA current. The tolerance within each bin is ±0.1V. Selecting LEDs from the same voltage bin helps maintain uniform brightness in parallel circuits or when using constant voltage drivers.

3.2 Luminous Intensity Binning

An raba ƙarfin zuwa nau'uka uku: R (112.0-180.0 mcd), S (180.0-280.0 mcd), da T (280.0-450.0 mcd). Kowane bincike yana da saɓo na ±15%. Wannan bincike yana da mahimmanci ga aikace-aikacen da ke buƙatar takamaiman matakin haske ko daidaito tsakanin LED-ori da yawa.

3.3 Dominant Wavelength Binning

Ana sarrafa launi (yanayin kore) ta hanyar rarraba babban tsawon zango zuwa iyakoki uku: B (564.5-567.5 nm), C (567.5-570.5 nm), da D (570.5-573.5 nm). Saɓo shine ±1 nm. Wannan yana tabbatar da daidaiton launin da ake gani, wanda ke da mahimmanci ga aikace-aikacen kayan kwalliya da sigina.

4. Performance Curve Analysis

Ko da yake an ambaci takamaiman zane-zane (misali Hoto 1, Hoto 5) a cikin takardar ƙayyadaddun bayanai, ma'anarsu ta daidaitacce ce. Lankwalin ƙarfin lantarki na gaba da ƙarfin lantarki na gaba (I-V) zai nuna alaƙar diode mai ma'ana ta al'ada. A cikin yankin aiki mai aminci, ƙarfin haskakawa yana daidai da ƙarfin lantarki na gaba. Zanen kusurwar gani (Hoto 5) yana kwatanta yanayin hasken haske na rabin kusurwar digiri 25. Zanen rarraba bakan (Hoto 1) zai nuna kololuwa a kusan 574nm, tare da rabin faɗin 15nm, yana tabbatar da halayen fitar da kore mai kunkuntar bakan na fasahar AlInGaP. Ayyuka za su ragu a cikin yanayin zafi mai tsanani; ƙarfin haskakawa yakan ragu yayin da zafin haɗin gwiwa ya ƙaru.

5. Mechanical and Packaging Information

Wannan LED ya dace da girman kunshewar EIA, cikakkun bayanai suna cikin zanen kunshewar da aka ambata. Na'urar tana amfani da ruwan tabarau mai siffar kumfa, wanda ke taimakawa wajen tsara fitowar haske da kuma ba da kariya ga guntu. Ana samar da samfurin a cikin tef ɗin 8mm, na'urar nadi mai diamita 7 inci, wannan shine ma'auni na layin haɗa SMD ta atomatik. Tef ɗin da na'urar nadi sun dace da ma'auni na ANSI/EIA 481. An ba da shirin shimfidar gindin zamewa don tabbatar da ingantaccen haɗin gwiwa da kwanciyar hankali na injiniya yayin aikin walda da bayansa.

6. Soldering and Assembly Guide

6.1 Reflow Soldering Profile

Wannan LED ya dace da tsarin walda ta hanyar infrared. An ba da shawarar lanƙwasa don guduro mara gubar. Mahimmancin sigogi sun haɗa da yankin dumama zuwa matsakaicin 150-200°C, matsakaicin zafi bai wuce 260°C ba, da kuma lokacin da ya wuce 260°C an iyakance shi zuwa mafi tsawon dakika 10. Ya kamata a daidaita lanƙwasa bisa ga ƙirar PCB, man walda, da kuma na'urar walda da ake amfani da ita. Takardun bayanan sun yi la'akari da lanƙwasa na JEDEC a matsayin ma'auni mai inganci.

6.2 Handling and Storage

LED yana da hankali ga zubar da wutar lantarki (ESD). Dole ne a ɗauki matakan kariya na ESD yayin aiki, kamar amfani da bel ɗin wuya mai ƙasa da teburin aiki. Lokacin ajiyewa, buhun da ba a buɗe ba ya kamata a ajiye shi a yanayin ≤30°C da ≤90% zafi na dangi, kuma yana da tsawon shekara guda. Bayan buɗewa, ya kamata a ajiye LED a yanayin ≤30°C da ≤60% zafi na dangi, kuma a yi amfani da shi cikin mako guda. Idan an ajiye shi daga fakitin asali na dogon lokaci, ana ba da shawarar gasa na 60°C na sa'o'i 20 kafin walda don kawar da ɗanɗano da aka sha, don hana faruwar "ɓarnar gasa" yayin walda.

6.3 Cleaning

If cleaning after soldering is required, only specified solvents should be used. Immersing the LED in ethanol or isopropyl alcohol at room temperature for no more than one minute is acceptable. The use of unspecified chemicals may damage the encapsulant or lens.

7. Packaging and Ordering Information

Standard packaging is 2000 pieces per 7-inch reel. For loose quantities, the minimum order quantity may be 500 pieces. The carrier tape is designed with cover tape sealing empty pockets; according to industry standards, the maximum number of consecutive missing components in the tape is two. The part number LTST-C950KGKT-5A encodes specific attributes, but the exact naming convention logic is proprietary.

8. Application Recommendations

8.1 Yanayin Aikace-aikace na Al'ada

This LED is suitable for general lighting and indication applications requiring high brightness and reliability. Common applications include status indicator lights on consumer electronics (routers, chargers, home appliances), backlighting for small displays or buttons, instrument panel lighting for automotive dashboards, and signage.

8.2 Abubuwan da Ya Kamata a Lura a Zaman Zane

• Current Limiting:Always use a series resistor or constant current driver to limit the forward current to 30mA DC or lower. Operating at or near the maximum ratings will shorten the service life.
• Thermal Management:Although the power consumption is low, ensuring sufficient PCB copper area or thermal vias helps manage the junction temperature, especially in high ambient temperature environments or when driven at higher currents.
• Reverse Voltage Protection:In circuits where reverse voltage transients may occur, consider connecting a protection diode in parallel with the LED (cathode to anode) to clamp the reverse voltage below 5V.
• Optical Design:The 25-degree viewing angle provides a focused beam. For wider illumination, secondary optics (diffusers, lenses) may be required.

9. Kwatancen Fasaha da Bambance-bambance

Compared to older GaP (Gallium Phosphide) green LEDs, AlInGaP technology offers significantly higher luminous efficacy and brightness. Compared to some InGaN (Indium Gallium Nitride)-based green LEDs, AlInGaP typically offers advantages in color purity (narrower spectral width) and stability with temperature and current variations. The water-clear lens (as opposed to a diffused lens) maximizes light output, making it ideal for applications requiring a sharp, well-defined beam or for use with external diffusers.

10. Tambayoyin da Ake Yawan Yi (FAQ)

Q: Can I drive this LED directly with a 5V power supply?
Amsa: A'a. A ƙarƙashin na'urar 5mA, matsakaicin ƙarfin lantarki na gaba yana kusan 2.0V. Haɗawa kai tsaye zuwa 5V zai haifar da wuce gona da iri na wutar lantarki, wanda zai lalata LED. Dole ne a yi amfani da resistor mai iyakancewa. Misali, ta amfani da wutar lantarki na 5V, manufar wutar lantarki na 5mA, ƙimar resistor ya kamata ta zama R = (5V - 2.0V) / 0.005A = 600Ω.

Tambaya: Menene bambanci tsakanin tsayin zango mafi girma da tsayin zango na farko?
Amsa: Tsayin zango mafi girma shine kololuwar jiki na bakan fitarwa. Tsayin zango na farko shine wurin launi da ake gani akan taswirar launi ta CIE. Ga tushen haske mai launi ɗaya kamar wannan LED kore, su biyun suna kusa amma ba daidai ba. Tsayin zango na farko ya fi dacewa don ƙayyadaddun launi.

Tambaya: Yaya ake fassara lambobin rarrabuwa yayin yin oda?
Amsa: Cikakken lambar sashi na iya ƙunshewa ko nuna takamaiman lambobin rarrabuwa na ƙarfin lantarki (1-6), ƙarfi (R, S, T), da tsayin zango (B, C, D). Don samun sakamako mai daidaito a cikin rukunin samarwa, ka saka lambobin rarrabuwa da ake buƙata ga mai rarrabawa ko masana'anta.

11. Ƙirar Aiki da Misalan Amfani

Yanayi: Ƙirƙirar panel nuna yanayi na LED da yawa.Designers need to use 10 green indicator lights with uniform brightness on the control panel. They should:
1. Specify LEDs from the same luminous intensity bin (e.g., all from T bin) and the same dominant wavelength bin (e.g., all from C bin) to ensure visual consistency.
2. Design the drive circuit. If using a constant 3.3V power rail, calculate the current-limiting resistor for each LED. Assuming V_Fis from Bin 4 (1.9V-2.0V), and the target I_Fis 10mA: R = (3.3V - 2.0V) / 0.01A = 130Ω. A 130Ω or 150Ω resistor is suitable.
3. Follow the recommended pad layout on the PCB to ensure soldering reliability.
4. Program the pick-and-place machine using the provided carrier tape and reel dimensions.
5. Validate the assembly process using the recommended infrared reflow profile, ensuring peak temperature and time limits are not exceeded.

12. Gabatarwa ga Ka'idodin Fasaha

This LED is based on AlInGaP semiconductor material grown on a substrate. When a forward voltage is applied, electrons and holes recombine in the active region of the PN junction, releasing energy in the form of photons (light). The specific composition of aluminum, indium, gallium, and phosphorus atoms determines the semiconductor's bandgap energy, which directly dictates the wavelength (color) of the emitted light. In this case, its composition is tuned to produce photons in the green region (approximately 570nm) of the visible spectrum. A dome-shaped epoxy lens is used to protect the delicate semiconductor chip, enhance the material's light extraction efficiency, and shape the radiation pattern.

13. Trends in Technology Development

The overall trend in LED technology is moving towards higher efficiency (more lumens per watt), higher power density, and better color rendering. For this type of indicator SMD LED, trends include further miniaturization (smaller package sizes), achieving higher brightness within the same footprint, and improving reliability under harsh conditions (higher temperature, humidity). Simultaneously, there is increasing emphasis on precise color binning and tighter tolerances to meet the demands of applications with extremely high requirements for color consistency, such as full-color displays and automotive lighting. The underlying AlInGaP material technology continues to be improved for greater efficiency and stability, although for pure green and blue, InGaN-based LEDs are also very common and compete in different performance segments.