T-1 Through-Hole LED Lamp LTL-R1NHED9T Specification - AlInGaP Red - 2.5V - 54mW - English Technical Document

1. Product Overview

This document details the specifications for a T-1 diameter through-hole LED lamp. This component is designed for status indication and signaling applications across a broad range of electronic equipment. The device utilizes AlInGaP (Aluminum Indium Gallium Phosphide) technology to produce a red color output through a red transparent lens. Its through-hole design facilitates versatile mounting on printed circuit boards (PCBs) or panels, making it a common choice for engineers requiring reliable visual feedback.

1.1 Core Features and Advantages

The LED offers several key benefits for design integration:

• Low Power Consumption & High Efficiency: Optimized for energy-sensitive applications.
• High Luminous Intensity Output: Provides bright, clear visibility.
• RoHS Compliant: Manufactured as a lead (Pb)-free product, meeting environmental regulations.
• Popular T-1 Package: Standard 3mm diameter form factor ensures wide compatibility.
• IC Compatible / Low Current Requirement: Can be driven directly by low-power logic circuits.

1.2 Target Applications and Markets

This LED is suitable for status indication in numerous sectors:

• Communication Equipment: Network devices, routers, modems.
• Computer Systems: Desktops, servers, peripherals.
• Consumer Electronics: Audio/video equipment, home entertainment systems.
• Home Appliances: Microwaves, washing machines, coffee makers.
• Industrial Equipment: Control panels, instrumentation, machinery.

2. Technical Parameters: In-Depth Objective Analysis

All specifications are defined at an ambient temperature (TA) of 25°C unless otherwise stated. Understanding these parameters is critical for reliable circuit design and ensuring long-term performance.

2.1 Absolute Maximum Ratings

These ratings represent the stress limits beyond which permanent damage to the device may occur. Operation under or at these limits is not guaranteed.

• Power Dissipation (Pd): 54 mW. The maximum total power the device can dissipate.
• Peak Forward Current (IFP): 60 mA. Permissible under pulsed conditions (1/10 duty cycle, 0.1ms pulse width).
• DC Forward Current (IF): 20 mA. The maximum continuous forward current.
• Forward Current Derating: Linear derating of 0.34 mA/°C applies from 40°C upwards. This means the maximum allowable continuous current decreases as temperature increases.
• Operating Temperature Range (Topr): -30°C to +85°C. The ambient temperature range for normal operation.
• Storage Temperature Range (Tstg): -40°C to +100°C.
• Lead Soldering Temperature: 260°C for a maximum of 5 seconds, measured 2.0mm (0.079") from the LED body.

2.2 Electrical and Optical Characteristics

These are the typical performance parameters under specified test conditions.

• Luminous Intensity (Iv): 65 to 550 mcd (min to max) with a typical value of 240 mcd, measured at IF = 10mA. The actual value is binned (see Section 4). Measurement uses a sensor/filter approximating the CIE photopic eye-response curve. A ±15% testing tolerance is included in the guarantee.
• Viewing Angle (2θ1/2): 45 degrees. Defined as the full angle at which luminous intensity drops to half its axial (on-axis) value.
• Peak Emission Wavelength (λP): 630 nm. The wavelength at the highest point of the emission spectrum.
• Dominant Wavelength (λd): 617 to 633 nm (range), typically 625 nm at IF=10mA. This is the single wavelength perceived by the human eye to define the color, derived from the CIE chromaticity diagram.
• Spectral Line Half-Width (Δλ): 20 nm. The spectral bandwidth at half the maximum intensity.
• Forward Voltage (VF): 2.5V typical, with a maximum of 2.5V at IF = 10mA.
• Reverse Current (IR): 100 μA maximum at a Reverse Voltage (VR) of 5V. Critical Note: This device is not designed for reverse-bias operation; this test condition is for characterization only.

3. Binning System Specification

To ensure color and brightness consistency in production, LEDs are sorted into bins based on measured performance. Two key parameters are binned.

3.1 Luminous Intensity Binning

Binned at a test current of 10mA. Tolerance for each bin limit is ±15%.

• Bin DE: 65 – 110 mcd
• Bin FG: 110 – 180 mcd
• Bin HJ: 180 – 310 mcd
• Bin KL: 310 – 550 mcd

The Iv classification code is marked on each packing bag for traceability.

3.2 Dominant Wavelength Binning

Binned at a test current of 10mA. Tolerance for each bin limit is ±1 nm.

• Bin H28: 617.0 – 621.0 nm
• Bin H29: 621.0 – 625.0 nm
• Bin H30: 625.0 – 629.0 nm
• Bin H31: 629.0 – 633.0 nm

4. Performance Curve Analysis

While specific graphical data is referenced in the source document, typical curves for such a device would illustrate the following relationships, crucial for understanding performance under non-standard conditions:

• Relative Luminous Intensity vs. Forward Current: Shows how light output increases with current, typically in a sub-linear fashion, highlighting the importance of current regulation for consistent brightness.
• Relative Luminous Intensity vs. Ambient Temperature: Demonstrates the negative temperature coefficient of light output; intensity decreases as junction temperature rises.
• Forward Voltage vs. Forward Current: The diode's I-V characteristic curve, essential for calculating the required series resistor value.
• Spectral Distribution: A plot of relative intensity versus wavelength, showing the peak at ~630 nm and the spectral half-width.

5. Mechanical and Package Information

5.1 Outline Dimensions

The device conforms to the standard T-1 (3mm) radial leaded package. Key dimensional notes include:

• All dimensions are in millimeters (inches).
• Standard tolerance is ±0.25mm (0.010") unless otherwise specified.
• Maximum protrusion of resin under the flange is 0.7mm (0.028").
• Lead spacing is measured where the leads emerge from the package body.
• The cathode (negative lead) is typically identified by a flat spot on the lens rim or a shorter lead. Always verify polarity before installation.

6. Soldering and Assembly Guidelines

Proper handling is vital to prevent mechanical or thermal damage.

6.1 Lead Forming and PCB Assembly

• Bend leads at a point at least 3mm from the base of the LED lens.
• Do not use the base of the lead frame as a fulcrum during bending.
• All lead forming must be completed before soldering, at normal room temperature.
• During PCB insertion, use the minimum clinch force necessary to avoid imposing excessive mechanical stress on the component.

6.2 Soldering Process

Maintain a minimum clearance of 2mm from the base of the epoxy lens to the solder point. Never immerse the lens in solder.

• Soldering Iron: Maximum temperature 350°C. Maximum soldering time 3 seconds per lead (one time only).
• Wave Soldering: Maximum pre-heat temperature 120°C for up to 100 seconds. Maximum solder wave temperature 260°C for up to 5 seconds.

Warning: Excessive soldering temperature or time can cause lens deformation or catastrophic LED failure. Do not apply external stress to the leads while the LED is hot.

6.3 Storage and Cleaning

• Storage: Recommended storage conditions do not exceed 30°C and 70% relative humidity. LEDs removed from their original packaging should be used within three months. For longer storage, use a sealed container with desiccant or a nitrogen desiccator.
• Cleaning: If necessary, clean only with alcohol-based solvents like isopropyl alcohol.

7. Application Design and Circuit Considerations

7.1 Drive Method

LED ni daidai na'urori ne masu aiki da ƙarfi. Haske nasu yafi zama aiki na gaba gaba (IF).

• Recommended Circuit (Circuit A): Don yin da LED da yawa a layi daya don samun haske iri daya, dole ne a sanya resistor mai iyakancewar kwarara a jere da kowane LED na kansa. Wannan yana rama bambance-bambancen halayen ƙarfin lantarki na gaba (VF) na kayan aiki.
• Da'ira Ba a Ba da Shawara Ba (Da'ira B): Connecting multiple LEDs in parallel directly to a voltage source with a single shared resistor is discouraged. Small differences in VF will cause significant current imbalance, leading to uneven brightness and potential over-current in the LED with the lowest VF.

The series resistor value (R_S) can be calculated using Ohm's Law: R_S = (V_SUPPLY - V_F) / I_F, where V_F is the LED forward voltage at the desired current I_F.

7.2 Electrostatic Discharge (ESD) Protection

This LED is susceptible to damage from electrostatic discharge. Implement the following ESD control measures:

• Operators should wear a conductive wrist strap or anti-static gloves.
• All equipment, workbenches, and storage racks must be properly grounded.
• Use an ionizer to neutralize static charge that may accumulate on the plastic lens due to handling friction.
• Ci gaba da shirye-shiryen horarwa da takaddun shaida ga ma'aikatan da ke aiki a wuraren da aka kare su daga ESD.

8. Packaging and Ordering Information

8.1 Packing Specification

The LEDs are packed in anti-static bags with the following hierarchy:

• 1000, 500, 200, or 100 pieces per packing bag.
• 10 packing bags are placed into one inner carton (total: 10,000 pieces).
• 8 inner cartons are packed into one outer shipping carton (total: 80,000 pieces).

A cikin kowane fakitin jigilar kaya, kawai fakitin ƙarshe zai iya ƙunsar adadin da bai cika ba.

9. Technical Comparison and Design Notes

Idan aka kwatanta da tsofaffin fasahohi kamar GaAsP (Gallium Arsenide Phosphide), tsarin kayan AlInGaP da aka yi amfani da shi a cikin wannan LED yana ba da ingantaccen ingantaccen haske da ingantaccen kwanciyar hankali na zafin jiki, wanda ke haifar da fitar da ja mai haske da daidaito. Kunshin T-1 ya kasance ɗaya daga cikin mafi yawan nau'ikan LED ta hanyar rami, yana tabbatar da samuwa mai yawa da dacewa da tsararrun PCB da yankewar panel. Lokacin ƙira, koyaushe koma ga cikakkun ƙimar iyaka, musamman ma lankwasa rage ƙimar don gaba da halin yanzu sama da 40°C yanayi, don tabbatar da amincin a cikin yanayin aiki da aka yi niyya. Haƙuri na ±15% akan ƙarfin haske da tsarin binning suna da mahimmanci don aikace-aikacen da ke buƙatar daidaitawar haske mai ƙarfi a cikin alamomi da yawa.