LTL403FDBK Orange LED Datasheet - Through-Hole LED - 5mm Round - 2.4V - 20mA - Technical Documentation

1. Product Overview

LTL403FDBK is a through-hole mounted LED indicator designed for general-purpose indication applications. It utilizes AlInGaP (Aluminum Indium Gallium Phosphide) semiconductor material to produce an orange light output. The device is characterized by its solid-state reliability, long operational life, and compatibility with integrated circuit drive levels, making it suitable for use as a level indicator or status lamp in various electronic equipment.

This product is a lead-free (Pb) component, compliant with the RoHS (Restriction of Hazardous Substances) directive. Its primary package is the standard 5mm round, water-clear lens type, offering a wide viewing angle for clear visibility from multiple directions.

1.1 Core Advantages

• Environmental Compliance:Lead-free and RoHS-compliant construction.
• High Reliability:Solid-state design ensures long operating life and durability.
• Easy integration:Compatible with standard IC logic levels, simplifying circuit design.
• Optical performance:Water-clear lens provides good light output and a well-defined viewing angle.

2. Detailed Technical Parameters

2.1 Absolute Maximum Ratings

These ratings define the limits beyond which permanent damage to the device may occur. Operation under these conditions is not guaranteed.

• Power Dissipation (P_D):Maximum 72 mW. This is the total power the device can safely dissipate as heat.
• Peak Forward Current (I_FP):Maximum 60 mA, under pulse conditions (1/10 duty cycle, 0.1ms pulse width).
• DC Forward Current (I_F):Maximum 20 mA continuous current.
• Operating Temperature Range (T_A):-40°C to +85°C. This device is suitable for industrial temperature environments.
• Temperature range for storage (T_stg):-40°C to +100°C.
• Pin soldering temperature:260°C for 5 seconds, measured at a point 2.0 mm from the LED body.

2.2 Electrical and Optical Characteristics

Unless otherwise specified, these parameters are defined under the conditions of an ambient temperature (T_A) of 25°C and a forward current (I_F) of 10 mA.

• Luminous intensity (I_v):50 mcd (min), 140 mcd (typ), 240 mcd (max). This is the perceived brightness of the LED. Guaranteed values include a ±15% tolerance.
• Viewing angle (2θ_1/2):40 degrees (typ). This is the full angle at which the luminous intensity drops to half of its axial (on-axis) value.
• Peak emission wavelength (λ_p):611 nm (typ). This is the wavelength at which the spectral output is strongest.
• Dominant wavelength (λ_d):598.0 nm (min), 605.0 nm (typ), 613.5 nm (max). This is the single wavelength that defines the perceived color of the LED, derived from the CIE chromaticity diagram.
• Spectral line half-width (Δλ):17 nm (typical value). This indicates the spectral purity or bandwidth of the emitted light.
• Forward voltage (V_F):1.9 V (minimum), 2.4 V (typical value). The voltage drop across the LED when the specified forward current is applied.
• Reverse current (I_R):At a reverse voltage (V_R) of 5V, maximum 100 μA. The device is not designed for reverse operation; this parameter is for test purposes only.

3. Grading System Description

LEDs are binned according to key optical parameters to ensure consistency in applications. Binning tolerances apply to the limits of each bin.

3.1 Luminous Intensity Grading

Unit: mcd @ 10mA. Bin limit tolerance: ±15%.

• CD bin:Minimum 50 mcd, maximum 85 mcd.
• EF bin:Minimum 85 mcd, maximum 140 mcd.
• GH bin:Minimum 140 mcd, maximum 240 mcd.

3.2 Dominant Wavelength Grading

Unit: nm @ 10mA. Limit tolerance per grade: ±1 nm.

• H22 Grade:598.0 nm to 600.0 nm.
• H23 Grade:600.0 nm to 603.0 nm.
• H24 Grade:603.0 nm to 606.5 nm.
• H25 bin:606.5 nm to 610.0 nm.
• H26 bin:610.0 nm to 613.5 nm.

This binning allows designers to select LEDs with very specific chromaticity points, which is crucial for applications requiring color matching or specific aesthetic requirements.

4. Performance Curve Analysis

The datasheet references typical performance curves, which are essential for understanding the device's behavior under different conditions. Although the specific graphs are not reproduced in the text, their implications are analyzed as follows.

4.1 Forward Current vs. Forward Voltage (I-V Curve)

The I-V characteristic is nonlinear, which is typical for a diode. The forward voltage (V_F) of 2.4V specified at 10mA is a key design parameter. As the current increases, V_Fincreases slightly due to the series resistance of the semiconductor and leads. This curve is crucial for designing the current-limiting resistor in the drive circuit.

4.2 Luminous Intensity vs. Forward Current

Within a certain range, the luminous intensity is approximately proportional to the forward current. It is not recommended to operate beyond the absolute maximum DC current (20mA), as this may lead to accelerated aging, reduced lifespan, and potential catastrophic failure. At extremely high currents, the relationship may become sublinear due to thermal effects.

4.3 Spectral Distribution

The spectral output curve shows a peak near 611 nm (orange), with a typical half-width of 17 nm. The dominant wavelength used for binning is calculated from this spectrum to define the color point. The narrow bandwidth is characteristic of AlInGaP technology, providing good color saturation.

4.4 Temperature Dependence

LED performance is sensitive to temperature. Typically, the forward voltage (V_F) has a negative temperature coefficient (decreases with increasing temperature), while the luminous intensity decreases with increasing junction temperature. Operating within the specified temperature range is crucial for maintaining performance and reliability.

5. Mechanical and Packaging Information

5.1 Package Dimensions

The device is a standard 5mm round through-hole LED. Key dimensional descriptions include:

• All dimensions are in millimeters (inches are for reference only).
• Unless otherwise specified, the standard tolerance is ±0.25mm (±0.010").
• The maximum resin protrusion under the flange is 1.0mm (0.04").
• Pin pitch is measured at the point where the pin extends from the package body.

5.2 Polarity Identification

For through-hole LEDs, the cathode is typically identified by a flat spot on the lens edge or a shorter lead. Consult this model's datasheet for specific polarity markings. Correct polarity is crucial for operation.

6. Soldering and Assembly Guide

6.1 Siffata Ƙugiya

• Bending must be performed at a point at least 3mm away from the base of the LED lens.
• The base of the lead frame must not be used as a fulcrum during the bending process.
• Pin forming must be carried out at normal room temperature and在completed prior to the soldering process.
• During PCB assembly, use the minimum required pressing force to avoid applying excessive mechanical stress to the LED package.

6.2 Tsarin Walda

• A minimum gap of at least 2mm must be maintained between the lens base and the solder joint.
• Immersing the lens in solder must be avoided.
• When the LED is at a high temperature due to soldering, no external stress should be applied to the pins.

Recommended soldering conditions:

• Electric soldering iron:Maximum temperature 350°C, maximum duration 3 seconds (only once).
• Wave soldering:
  • Preheating: maximum 100°C, maximum 60 seconds.
  • Solder wave: maximum 260°C, maximum 5 seconds.

Important note:Infrared (IR) reflow soldering is not suitable for this type of through-hole LED lamp beads. Excessive temperature or time may cause lens deformation or device failure.

7. Bayanin Marufi da Oda

7.1 Ƙa'idodin Marufi

LEDs are packaged in multiple layers for bulk handling:

• Inner bag:1000, 500, 200, or 100 pieces per bag.
• Inner box:10 bags per inner box, totaling 10,000 pieces.
• Master carton:Kowane akwati na 8 akwati a ciki, jimlar kayan 80,000.

8. Application Recommendations

8.1 Intended Use and Limitations

Wannan LED ya dace da na'urorin lantarki na yau da kullun, ciki har da na'urorin ofis, na'urorin sadarwa, da na'urorin gida. Ba a tsara shi don aikace-aikacen da ke buƙatar ingantacciyar aminci ba, musamman inda gazawar za ta iya haifar da barazana ga rayuwa ko lafiya (misali, jiragen sama, tsarin kiwon lafiya, mahimman na'urorin tsaro). Irin waɗannan aikace-aikacen masu ingantaccen aminci suna buƙatar tuntubar mai siyarwa.

8.2 Drive Circuit Design

LED na'urar tuƙi ce ta halin yanzu. Don tabbatar da daidaiton haske lokacin haɗa LED da yawa a layi daya,Ana ba da shawara sosaiConnect an independent current-limiting resistor in series with each LED (Circuit Model A).

Avoid directly connecting LEDs in parallel without independent resistors (Circuit Model B). Slight differences in the forward voltage (V_F) characteristics among individual LEDs can lead to significant current imbalance, resulting in uneven brightness and potential overcurrent in some devices.

The series resistor value (R_s) can be calculated using Ohm's Law: R_s= (V_supply- V_F) / I_F, where V_Fis the LED forward voltage (use the typical or maximum value for design margin), I_FIt is the required forward current (e.g., 10mA).

8.3 Electrostatic Discharge (ESD) Protection

LEDs are susceptible to damage from electrostatic discharge. Recommended preventive measures include:

• Use conductive wrist straps or anti-static gloves during handling.
• Ensure all equipment, workstations, and storage racks are properly grounded.
• Use ionizers to neutralize static charges that may accumulate on plastic lenses.

9. Storage and Handling

• Storage Conditions:Should not exceed 30°C and 70% relative humidity.
• Shelf Life:LEDs removed from the original packaging should be used within three months.
• Long-Term Storage:For long-term storage outside the original packaging, store the devices in a sealed container with desiccant or in a nitrogen-purged desiccator.
• Cleaning:If necessary, clean only with alcohol-based solvents such as isopropanol.

10. Technical Comparison and Considerations

10.1 Material Technology: AlInGaP

Using aluminum indium gallium phosphide (AlInGaP) as the active semiconductor material brings advantages for orange, red, and yellow LEDs. Compared to older technologies, AlInGaP typically offers higher luminous efficiency, better temperature stability, and a longer operational lifetime. The peak wavelength of 611 nm and narrow spectral width are direct results of this material system.

10.2 Through-Hole vs. Surface Mount

This is a through-hole device, meaning it is designed to be inserted into metallized through-holes on a PCB and soldered on the opposite side. This technology offers high mechanical strength and is often favored for prototyping, educational kits, or applications where manual assembly or repair is anticipated. In high-volume automated manufacturing, it is increasingly being replaced by Surface Mount Device (SMD) packages, as SMDs are smaller and have a lower profile.

11. Frequently Asked Questions (Based on Technical Specifications)

Q1: Zan iya sarrafa wannan LED a ci gaba da 20mA?
A1: I, 20mA shine cikakkiyar ƙimar igiyar DC ta gaba. Don aiki mai dogon lokaci mai dogaro, al'ada ita ce rage amfani da wannan ƙimar. Yin aiki a cikin yanayin gwaji na yau da kullun na 10mA ko ɗan sama (misali 15-18mA) zai tsawaita rayuwa kuma ya inganta kwanciyar hankali.

Q2: Me yasa iyakokin rarrabuwar ƙarfin haske ke da ƙimar sallamar ±15%?
A2: Wannan don la'akari da sauye-sauyen tsarin ma'auni, kuma don tabbatar da cewa tsarin rarrabuwa yana yiwuwa a aikace. Wannan yana nufin cewa LED da aka yiwa alama "EF" (85-140 mcd), a ƙarƙashin iyakokin sallamar, ainihin ma'auni na iya zama ƙasa har zuwa 72.25 mcd ko sama har zuwa 161 mcd. Dole ne masu zane su yi la'akari da wannan rarrabuwa a cikin zanensu na gani.

Q3: Me zai faru idan na yi walda kusa da jikin LED?
A3: Yawan zafi da ake kaiwa ta hanyar fil ɗin na iya lalata igiyar haɗin ciki, lalata guntuwar semiconductor, ko narkewa/karkatar da ruwan tabarau na filastik. Wannan na iya haifar da gazawar nan take ko rage rayuwar LED sosai. A tabbatar da ajiya aƙalla 2mm.

Q4: Zan iya amfani da shi don na'urorin da ake cajin baturi?
A4: Ee, yana da ƙarancin ƙarfin gaba na 2.4V a 10mA, ya dace da aiki tare da batirin maballin 3V (kamar CR2032) ko batir AA/AAA guda biyu a jere (3V). Dole ne a haɗa resistor a jere don iyakance ƙarfin lantarki daga ƙarin ƙarfin batir.

12. Design Case Studies

Yanayi:Ƙirƙirar dashboard tare da fitilun nuna matsayi masu launin lemu guda huɗu don kayan amfani na mai amfani waɗanda ke samun wutar lantarki ta 5V DC.

Matakan Zane:

1. Zaɓin Ƙarfin Lantarki:Zaɓi ƙarfin gaba (I_F), to achieve a good balance between brightness and lifespan, far below the maximum of 20mA.
2. Voltage Reference:For conservative design, use the maximum forward voltage (V_F) from the datasheet. Although the typical value is 2.4V, using a value like 2.6V provides margin.
3. Resistor Calculation: R_s= (V_supply- V_F) / I_F= (5V - 2.6V) / 0.015A = 160 ohms. The nearest standard E24 values are 160Ω or 150Ω.
4. Resistor Rated Power: P_R= I_F²* R_s= (0.015)²* 160 = 0.036W. A standard 1/8W (0.125W) or 1/10W resistor is more than sufficient.
5. Circuit Layout:Use four independent circuits (LED + 160Ω resistor) connected in parallel to the 5V power rail. Do not connect the four LEDs to a single shared resistor.
6. PCB Layout:确保LED安装孔保持3mm的引脚弯曲距离，并且PCB上的焊盘位置距离LED本体轮廓>2mm。

13. Working Principle

The Light Emitting Diode (LED) is a semiconductor p-n junction device. When a forward voltage exceeding the junction's built-in potential is applied, electrons from the n-type region and holes from the p-type region are injected into the active region, where they recombine. In this specific AlInGaP LED, the energy released during this electron-hole recombination process exists primarily as photons (light), with an energy corresponding to the orange portion of the visible spectrum (approximately 611 nm wavelength). A water-clear epoxy resin lens is used to protect the semiconductor chip, shape the light output beam, and enhance the material's light extraction efficiency.

14. Technical Trends

The overall trend in LED packaging is towards smaller form factors and Surface-Mount Device (SMD) technology for automated assembly. However, through-hole LEDs like the 5mm round package remain relevant in the hobbyist market, for educational purposes, legacy product support, and applications requiring extremely high mechanical bond strength. Advancements in AlInGaP and related III-V semiconductor materials continue to push the limits of efficiency (lumens per watt) and reliability. Furthermore, phosphor conversion technology is under continuous development to achieve a broader color gamut from a single semiconductor material, but for monochromatic orange LEDs, directly-emitting AlInGaP remains the dominant and most efficient technology.