HIR16-213C/L423/TR8 Mini-Top Infrared LED Datasheet - SMD Package - 850nm Peak Wavelength - 145° View Angle - English Technical Document

1. Product Overview

The HIR16-213C/L423/TR8 is a high-reliability, miniature surface-mount device (SMD) infrared (IR) emitting diode. It is designed for applications requiring a compact, efficient infrared source compatible with modern automated assembly processes. The device is molded in water-clear epoxy, providing a robust package while allowing optimal transmission of the infrared light.

Core Advantages: The primary advantages of this component include its small double-ended package footprint, high reliability, and full compliance with environmental regulations such as RoHS, EU REACH, and halogen-free requirements (Br <900 ppm, Cl <900 ppm, Br+Cl < 1500 ppm). It is specifically spectrally matched with silicon photodiodes and phototransistors, making it ideal for sensing systems.

Target Market & Applications: This IR LED is targeted at designers and manufacturers of electronic systems requiring infrared functionality. Key application areas include PCB-mounted infrared sensors for proximity or object detection, infrared remote control units where higher radiant intensity is needed, various types of optical scanners, and other infrared-applied systems.

2. Technical Specifications Deep Dive

2.1 Absolute Maximum Ratings

These ratings define the limits beyond which permanent damage to the device may occur. Operation outside these limits is not advised.

• Continuous Forward Current (I_F): 50 mA. This is the maximum DC current that can be continuously applied.
• Reverse Voltage (V_R): 5 V. Exceeding this voltage in reverse bias can break down the diode junction.
• Operating & Storage Temperature (T_opr, T_stg): -40°C to +100°C. This wide range ensures suitability for industrial and automotive environments.
• Soldering Temperature (T_sol): 260°C for a maximum of 5 seconds, compatible with lead-free reflow profiles.
• Power Dissipation (P_c): 100 mW at or below 25°C ambient temperature. Derating is necessary at higher temperatures.

2.2 Electro-Optical Characteristics

These parameters are measured at a standard test condition of 25°C ambient temperature and a forward current of 20 mA, unless otherwise specified.

• Radiant Intensity (I_E): Typical value is 1.50 mW/sr, with a minimum of 0.50 mW/sr. This measures the optical power emitted per unit solid angle.
• Peak Wavelength (λ_p): 850 nm (typical), ranging from 840 nm to 870 nm. This wavelength is near-optimal for silicon-based detectors.
• Spectral Bandwidth (Δλ): Typically 30 nm. This defines the spectral width at half the maximum intensity.
• Forward Voltage (V_F): Typically 1.45V, with a maximum of 1.65V at I_F=20mA. At a pulsed current of 100mA (pulse width ≤100μs, duty ≤1%), V_F max rises to 2.00V.
• Reverse Current (I_R): Maximum 10 μA at V_R=5V, indicating good junction quality.
• View Angle (2θ_1/2): 145 degrees (typical). This very wide viewing angle is characteristic of the lens design, providing broad emission.

3. Binning System Explanation

The device is available in different performance ranks, primarily based on radiant intensity. This allows designers to select a grade appropriate for their specific sensitivity or range requirements.

• Rank F: Radiant Intensity between 0.50 and 1.50 mW/sr at I_F=20mA.
• Rank G: Radiant Intensity between 1.00 and 2.50 mW/sr.
• Rank H: Radiant Intensity between 2.00 and 3.50 mW/sr.
• Rank J: Radiant Intensity between 3.00 and 4.50 mW/sr.

There is no indicated binning for forward voltage or peak wavelength in the standard offering, though these parameters have specified min/typ/max values.

4. Performance Curve Analysis

4.1 Radiant Intensity vs. Forward Current

The provided graph shows a non-linear relationship. Radiant intensity increases with forward current but will eventually saturate due to thermal and efficiency limits. The curve is essential for determining the operating current needed to achieve a desired optical output.

4.2 Forward Current vs. Forward Voltage

This IV curve exhibits the standard exponential characteristic of a diode. The typical V_F of 1.45V at 20mA is a key parameter for driving circuit design (e.g., series resistor calculation).

4.3 Forward Current vs. Ambient Temperature

The derating curve shows that the maximum allowable continuous forward current decreases as ambient temperature increases. This is critical for ensuring long-term reliability, especially in high-temperature applications. The device cannot be operated at its full 50mA rating across the entire temperature range.

4.4 Spectral Distribution

The spectral output is centered at 850nm with a typical bandwidth of 30nm. This matches the peak responsivity region of common silicon photodetectors, maximizing system signal-to-noise ratio.

4.5 Relative Radiant Intensity vs. Angular Displacement

The polar plot confirms the 145° viewing angle, where the intensity drops to half its peak value at ±72.5° from the central axis. The emission pattern appears close to Lambertian, suitable for broad-area illumination.

5. Mechanical and Package Information

The device uses a compact "Mini-Top" SMD package. Key dimensional notes from the datasheet include:

• All dimensions are in millimeters.
• Standard tolerance for unspecified dimensions is ±0.1mm.
• The package features a double-ended design for mechanical stability during soldering.
• The water-clear epoxy lens is integral to the package body.

Polarity Identification: The cathode is typically marked on the package, often with a green dot, a notch, or a shorter lead. The datasheet diagram must be consulted for the exact marking scheme.

6. Soldering and Assembly Guidelines

6.1 Storage and Moisture Sensitivity

The device is moisture-sensitive (MSL). Precautions are critical:

• Do not open the moisture-proof bag until ready for use.
• Pre-opening storage: ≤30°C / ≤90% RH. Use within 1 year.
• Post-opening storage: ≤30°C / ≤60% RH. Use within 168 hours (7 days).
• If the storage time is exceeded or the desiccant indicates moisture, a bake at 60±5°C for minimum 24 hours is required before reflow.

6.2 Reflow Soldering

The component is compatible with infrared and vapor phase reflow processes.

• A lead-free temperature profile with a peak of 260°C is specified.
• Reflow should not be performed more than two times.
• Avoid mechanical stress on the package during heating and cooling.
• Do not warp the PCB after soldering.

6.3 Hand Soldering and Rework

If hand soldering is necessary:

• Use a soldering iron with a tip temperature <350°C.
• Limit contact time to ≤3 seconds per terminal.
• Use an iron with power ≤25W.
• Allow a cooling interval of >2 seconds between terminals.
• For rework, a dual-head soldering iron is recommended to simultaneously heat both terminals and avoid damaging the package. Always verify device functionality after any rework.

6.4 Circuit Protection

Critical: An external current-limiting resistor MUST be used in series with the LED. The forward voltage has a negative temperature coefficient, meaning current can increase runaway if not properly controlled. A slight increase in voltage can cause a large current change, leading to immediate burnout.

7. Packaging and Ordering Information

7.1 Tape and Reel Specifications

The device is supplied in 8mm carrier tape on 7-inch diameter reels. Each reel contains 3000 pieces. The carrier tape dimensions ensure compatibility with standard SMD pick-and-place equipment.

7.2 Packing Procedure and Labels

Reels are packed in aluminum moisture-proof bags with desiccant. Labels on the bag include critical information for traceability and correct application:

• CPN (Customer's Part Number)
• P/N (Production Part Number: HIR16-213C/L423/TR8)
• QTY (Quantity)
• CAT (Rank/Bin Code, e.g., F, G, H, J)
• HUE (Peak Wavelength)
• LOT No. (Manufacturing Lot Number)
• Production Origin

7.3 Device Selection Guide

The model number HIR16-213C/L423/TR8 decodes as follows: The chip material is AlGaAs (Aluminum Gallium Arsenide), and the lens color is Water Clear. The "TR8" suffix indicates the 8mm tape and reel packaging.

8. Application Design Suggestions

8.1 Typical Application Circuits

In a typical driving circuit, the LED is connected in series with a current-limiting resistor to a voltage supply (V_CC). The resistor value is calculated using Ohm's Law: R = (V_CC - V_F) / I_F. For example, with V_CC=5V, V_F=1.45V, and I_F=20mA, R = (5 - 1.45) / 0.02 = 177.5 Ω. A standard 180 Ω resistor would be suitable. For pulsed operation at higher currents (e.g., 100mA), ensure the driver (often a transistor) can handle the peak current and that the duty cycle is kept very low (≤1%) to avoid overheating.

8.2 Optical Design Considerations

The 145° wide viewing angle makes this LED excellent for applications requiring broad, diffuse illumination, such as proximity sensors that need to cover a wide area. For longer-range or more directed applications, secondary optics (lenses) may be required to collimate the beam. The water-clear lens is optimal for near-infrared transmission with minimal absorption.

8.3 Thermal Management

While the package is small, power dissipation must be considered, especially at higher currents or in high ambient temperatures. Ensure the PCB pad layout provides adequate thermal relief and that the maximum junction temperature is not exceeded. The derating curve for forward current vs. temperature is the primary guide.

9. Technical Comparison and Differentiation

Compared to standard 5mm or 3mm through-hole IR LEDs, this SMD device offers significant advantages:

• Size & Automation: The miniature SMD package enables smaller PCB designs and is fully compatible with high-speed automated pick-and-place and reflow soldering, reducing assembly costs.
• Viewing Angle: The 145° viewing angle is exceptionally wide for an SMD IR LED, providing more uniform coverage than many competitors with narrower beams.
• Compliance: Full compliance with RoHS, REACH, and halogen-free standards is a key differentiator for products targeting global markets with strict environmental regulations.
• Spectral Matching: The 850nm peak is intentionally matched to silicon detectors, a feature that may not be optimized in all generic IR LEDs.

10. Frequently Asked Questions (Based on Technical Parameters)

10.1 What is the difference between Radiant Intensity (mW/sr) and Radiant Power (mW)?

Radiant Intensity is the optical power emitted per unit solid angle (steradian). Radiant Power is the total optical power emitted in all directions. For a LED with a known intensity and viewing angle pattern, the total power can be calculated by integrating the intensity over the full emission sphere. The datasheet provides intensity, which is more useful for calculating irradiance on a detector at a specific distance and angle.

10.2 Can I drive this LED at 50mA continuously?

You can only drive it at 50mA DC if the ambient temperature is at or below 25°C and you have adequate thermal management. The derating curve shows the maximum allowable continuous current decreases as temperature rises. For reliable operation across the full temperature range, a lower current or pulsed operation is recommended.

10.3 Why is a current-limiting resistor absolutely necessary?

LEDs are current-driven devices, not voltage-driven. Their V-I curve is very steep. A small increase in forward voltage (due to temperature or supply variation) can cause a very large, potentially destructive increase in current. The series resistor provides negative feedback, stabilizing the operating point.

10.4 How do I interpret the "Rank" (F, G, H, J)?

The rank is a binning code for radiant intensity. It allows you to select a device with a guaranteed minimum optical output for your application. For example, if your sensor needs at least 2.0 mW/sr, you should specify Rank H or J. Using a lower rank (F or G) could result in a device that does not meet your system's sensitivity requirements.

11. Practical Application Example

Design Case: Simple Proximity Sensor

Objective: Detect when an object comes within 10cm of the sensor.

Design: Place the HIR16-213C/L423/TR8 IR LED and a matching silicon phototransistor side-by-side on a PCB, facing the same direction. Drive the LED with a 20mA constant current (using the calculated series resistor). When no object is present, the IR light beams away and the phototransistor sees very little reflected light. When an object enters the detection zone, some IR light reflects back onto the phototransistor, causing its collector current to increase. This current change can be amplified and converted to a digital signal by a comparator.

Component Selection Rationale: The wide 145° viewing angle of the LED ensures a broad detection field. The 850nm wavelength ensures maximum responsivity from the phototransistor. Selecting a Rank H or J LED provides higher radiant intensity, increasing the amount of reflected light and potentially the detection range or reliability.

Key Calculations: The driving resistor value (as calculated in section 8.1). The expected signal level at the phototransistor would depend on the object's reflectivity and would need to be characterized empirically to set the comparator's threshold correctly.

12. Operating Principle

An Infrared Light Emitting Diode (IR LED) is a semiconductor p-n junction diode. When a forward voltage is applied, electrons from the n-type semiconductor and holes from the p-type semiconductor are injected across the junction. When these charge carriers recombine in the active region (the AlGaAs chip in this case), energy is released in the form of photons (light). The specific material composition (AlGaAs) determines the bandgap energy, which directly defines the wavelength of the emitted photons—in this case, in the near-infrared spectrum around 850 nanometers. The water-clear epoxy package encapsulates the chip, provides mechanical protection, and acts as a primary lens to shape the emitted light's angular distribution.

13. Technology Trends

Infrared LED technology continues to evolve alongside broader optoelectronics trends. Key directions include:

• Increased Efficiency: Development of new semiconductor materials and epitaxial structures aims to produce more optical power (higher radiant intensity) for the same electrical input, reducing system power consumption and heat generation.
• Miniaturization: The drive for smaller consumer electronics and IoT devices pushes for even smaller package footprints while maintaining or improving optical performance.
• Integrated Solutions: There is a trend towards combining the IR emitter, detector, and sometimes control logic into a single module or package, simplifying design and improving performance for specific applications like gesture sensing or active 3D imaging.
• Wavelength Diversification: While 850nm and 940nm are common, other wavelengths are being developed for specialized applications, such as spectroscopy or eye-safe systems.
• Enhanced Reliability & Compliance: As regulations tighten and product lifetimes extend, focus on robust packaging, improved moisture resistance, and guaranteed compliance with global environmental and safety standards remains paramount.

Disclaimer Notice: The information presented here is derived from and represents the technical content of the provided datasheet. Typical values are not guaranteed. Designers must consult the official datasheet for absolute maximum ratings and application instructions. The manufacturer assumes no responsibility for damage resulting from use outside specified conditions. All specifications are subject to change by the manufacturer.