PD204-6B/L3 Phototransistor Datasheet - 3mm Package - Peak Sensitivity 940nm - Technical Documentation

1. Product Overview

PD204-6B/L3 ni photodiode ya silikoni ya PIN yenye kasi ya juu na usikivu mkali, iliyotengenezwa kwa kifuniko cha plastiki cha kawaida cha 3mm. Kipengele hiki kina sifa za wigo zinazolingana na diodi za mionzi ya mwanga unaoonekana na infrared, na usikivu wake wa kilele umeboreshwa kwa urefu wa wimbi wa 940nm, unafaa kwa matumizi mbalimbali ya hisia yanayohitaji majibu ya haraka na utendakazi thabiti.

Faida kuu za kipengele hiki ni pamoja na wakati wake wa majibu ya haraka, usikivu mkali wa mwanga, na uwezo mdogo wa makutano, sifa hizi pamoja huhakikisha ugunduzi bora wa ishara. Bidhaa hii inalingana na kanuni za RoHS na REACH za Umoja wa Ulaya, na imetengenezwa kwa mchakato usio na risasi (Pb-free).

2. Detailed Technical Parameters

2.1 Absolute Maximum Ratings

This device is designed to operate reliably within specified environmental and electrical limits. Exceeding these ratings may cause permanent damage.

• Reverse Voltage (VR):32 V - The maximum reverse bias voltage that can be applied across the photodiode.
• Operating Temperature (Topr):-25°C to +85°C - The ambient temperature range within which the device operates normally.
• Storage Temperature (Tstg):-40°C to +100°C - The safe temperature range for storing the device when it is not powered.
• Soldering Temperature (Tsol):According to the standard reflow soldering profile, the peak temperature is 260°C, with a duration not exceeding 5 seconds.
• Power Consumption (Pc):150 mW at a free-air temperature of 25°C or below.

2.2 Electro-Optical Characteristics

Vigezo hivi vinafafanua utendakazi mkuu wa transistor ya mwanga chini ya hali za kawaida za majaribio (Ta=25°C).

• Upana wa wigo (λ0.5):760 nm to 1100 nm. This defines the wavelength range over which the device maintains at least half of its peak sensitivity.
• Peak Sensitivity Wavelength (λP):940 nm (typical). The device is most sensitive to this infrared wavelength.
• Open-circuit voltage (VOC):Under the conditions of 940nm wavelength and an irradiance (Ee) of 1 mW/cm², the typical value is 0.42 V.
• Short-circuit current (ISC):Under the same test conditions (Ee=1mW/cm², λp=940nm), the typical value is 4.3 μA.
• Reverse photocurrent (IL):Under the conditions of VR=5V, Ee=1mW/cm², λp=940nm, the minimum value is 3.9 μA, and the typical value is 6 μA. This is the photocurrent generated when the diode is reverse-biased and illuminated.
• Reverse dark current (ID):The maximum value is 10 nA under the conditions of VR=10V and complete darkness (Ee=0mW/cm²). This is a tiny leakage current that flows even when there is no light.
• Reverse Breakdown Voltage (VBR):The minimum value measured is 32 V when the reverse current (IR) is 100μA in darkness.
• Total Capacitance (Ct):Under the conditions of VR=5V and frequency of 1MHz, the typical value is 10 pF. Lower capacitance enables faster switching speed.
• Rise/Fall Time (tr/tf):Under conditions of VR=10V and a load resistance (RL) of 100Ω, the typical value is 10 ns / 10 ns, indicating an extremely fast response speed, making it suitable for pulsed light detection.
• Viewing Angle (2θ1/2):45° (typical). This defines the angular field of view within which the device maintains sensitivity.

In related applications, the luminous intensity tolerance is ±10%, the dominant wavelength tolerance is ±1nm, and the forward voltage tolerance is ±0.1V.

3. Performance Curve Analysis

Mwongozo wa maelezo hutoa mikunjo mingi ya sifa, ili kuelezea tabia ya kifaa chini ya hali tofauti. Mikunjo hii ni muhimu sana kwa wahandisi wa kubuni kutabiri utendaji katika hali halisi za matumizi.

3.1 Uhusiano wa Matumizi ya Nguvu na Joto la Mazingira

Mkunjo huu unaonyesha kuwa, joto la mazingira linapozidi 25°C, kiwango cha juu cha matumizi ya nguvu kinaruhusiwa hupungua. Wabunifu wanapaswa kupunguza uwezo wa usindikaji ipasavyo, ili kuhakikisha uimara wa muda mrefu.

3.2 Uwezo wa Kugundua Mwanga

The spectral response curve confirms the device's peak sensitivity at 940nm and its effective range from approximately 760nm to 1100nm. It highlights the device's suitability for applications utilizing common infrared LEDs.

3.3 Relationship Between Reverse Dark Current and Ambient Temperature

Dark current increases exponentially with temperature. For applications operating in high-temperature environments, this curve is crucial because higher dark current increases noise and may affect the signal-to-noise ratio under low-light conditions.

3.4 Relationship Between Reverse Photocurrent and Irradiance (Ee)

This graph illustrates the linear relationship between the generated photocurrent (IL) and the incident light intensity (irradiance) within the specified range. It confirms the predictable and linear photometric response of the device.

3.5 Uhusiano wa Uwezo wa Mwisho na Voltage ya Kinyume

Uwezo wa kiungo (Ct) hupungua kadri voltage ya upendeleo wa kinyume inavyoongezeka. Kwa matumizi ya kasi ya juu, uwezo mdogo ni bora, na mkunjo huu husaidia kuchagua sehemu bora ya kufanya kazi ya upendeleo.

3.6 Uhusiano wa Muda wa Kujibu na Upinzani wa Mzigo

Mkunjo huu unaonyesha jinsi muda wa kupanda na kushuka (tr/tf) unavyoathiriwa na thamani ya upinzani wa mzigo wa nje (RL). Kutumia upinzani mdogo wa mzigo kunawezesha kujibu kwa haraka, lakini hii hupunguza ukubwa wa ishara.

4. Taarifa za Mitambo na Ufungaji

4.1 Package Dimensions

The device uses a standard 3mm radial lead package. The dimension drawing specifies the body diameter, lead spacing, and lead dimensions. All unspecified tolerances are ±0.25mm. The lens color is black.

4.2 Polarity Identification

Kathodi (terminali hasi) kwa kawaida hutambuliwa kupwa uso wa gorofa au pini ndefu kwenye kifuniko. Lazima kuzingatia usahihi wa upeo wakati wa kukusanya saketi, ili kuhakikisha kufanya kazi kwa usawa wa kinyume.

5. Welding and Assembly Guide

Kipengele hiki kinatumika kwa mchakato wa kawaida wa usanikishaji wa PCB.

• Uchomeaji wa reflow:Kiwango cha juu cha joto cha kuchomelea ni 260°C, wakati katika joto hili au zaidi haupaswi kuzidi sekunde 5, ili kuzuia uharibifu wa joto kwa kifuniko cha plastiki na chip ya semiconductor.
• Kuchomelea kwa mkono:Ikiwa kuchomelea kwa mkono kunahitajika, chuma cha kuchomelea chenye udhibiti wa joto kinapaswa kutumiwa, na wakati wa mgusano upunguzwe iwezekanavyo (kawaida chini ya sekunde 3 kwa kila pini).
• Kusafisha:Tumia kioevu cha kusafisha kinacholingana na nyenzo za kufunga plastiki.
• Kuhifadhi:Hifadhi katika mazingira yaliyokauka na yanayozuia umeme, ndani ya safu ya halijoto maalum ya kuhifadhi (-40°C hadi +100°C).

6. Ufungaji na Taarifa za Kuagiza

6.1 Vipimo vya Idadi ya Ufungaji

Standard packaging is as follows: 200-1000 pieces per bag, 4 bags per box, 10 boxes per carton. This provides flexibility for prototype development and mass production.

6.2 Label Format Specifications

The product label contains key information for traceability and identification:

• CPN:Customer Product Number
• P/N:Product Number (e.g., PD204-6B/L3)
• QTY:Idadi ya Ufungaji
• CAT, HUE, REF:Grading levels for luminous intensity, dominant wavelength, and forward voltage (if applicable).
• LOT No:Production lot number, used for traceability.
• X:Mwezi wa uzalishaji.

7. Application Recommendations

7.1 Mandhari ya Kawaida ya Utumizi

The PD204-6B/L3 is highly suitable for various photoelectric sensing applications, including:

• Automatic Door Sensors:Detecting interruptions in the infrared beam to trigger the door's open/close mechanism.
• Kopieringsmaskiner och skrivare:För pappersdetektering, kantdetektering eller övervakning av tonerhalt.
• Spelkonsoler/arkadsystem:Kwa kugundua vitu, udhibiti wa mwingiliano au hisia ya eneo.
• Kugundua kwa infrared ya jumla:Kipokezi cha kudhibiti kwa mbali, sensor ya ukaribu na nyanja za otomatiki za viwanda zinazohitaji kugundua haraka na kwa uaminifu mwanga wa infrared wa 940nm.

7.2 Design Considerations

• Bias Circuit:Operate the photodiode in reverse bias (photoconductive mode) for optimal speed and linearity. As indicated in the specifications, a typical reverse voltage is 5V to 10V.
• Load Resistor (RL):RL is selected based on the trade-off between response speed (bandwidth) and output voltage swing. It is recommended to use a Transimpedance Amplifier (TIA) circuit to convert the weak photocurrent into a usable voltage while maintaining high speed and low noise.
• Optical Considerations:Ensure proper alignment with the light source (typically a 940nm infrared LED). The field of view with a 45° viewing angle should be considered. Using an optical filter helps block unwanted ambient light, especially visible light.
• Kupunguza KeleleKwa matumizi nyeti, kifaa na saketi yake zinapaswa kuzuiwa na usumbufu wa kelele za umeme. Weka njia fupi, tumia capacitor za bypass, na zingatia athari za mkondo wa giza kwenye joto la juu.

8. Technical Comparison and Differentiation

Ikilinganisha na photodiode au phototransistor za kawaida zenye muda wa kukawia polepole, PD204-6B/L3 ina faida kubwa:

• Kasi ya juu:Muda wa kupanda/kushuka ni 10ns, haraka zaidi kuliko phototransistor nyingi za jumla, na unaweza kugundua ishara zilizobadilishwa haraka.
• Muundo wa PIN:The PIN photodiode structure provides a wider depletion region compared to standard PN photodiodes, resulting in lower junction capacitance (10pF) and higher speed.
• Optimized Spectrum:The peak sensitivity at 940nm precisely matches the output of common, low-cost infrared LEDs, maximizing system efficiency.
• Standard Package:The 3mm radial package is a common industry form factor, easy to integrate into existing designs and compatible with standard PCB footprints.

9. Maswali Yanayoulizwa Mara kwa Mara (Kulingana na Vigezo vya Kiufundi)

9.1 Kuna tofauti gani kati ya kufanya kazi katika hali ya photovoltaic (bias ya sifuri) na hali ya photoconductive (bias ya kinyume)?

In photovoltaic mode (V_R=0V), the photodiode generates a voltage (V_OC). This mode has zero dark current but slower response and poorer linearity. The PD204-6B/L3 specification lists VOC=0.42V. In photoconductive mode (with reverse bias applied, e.g., V_R=5V), an external voltage is applied. This reduces junction capacitance (enabling faster response, as indicated by the 10ns tr/tf), improves linearity, and allows for a larger active area, but introduces dark current (I_D). For the high-speed applications intended for this device, photoconductive mode is recommended.

9.2 How can the photocurrent (I_L) be converted into a measurable voltage?

The simplest method is to connect a load resistor (R_L) in series. The output voltage is V_out = I_L * R_L. However, as R_L increases, the RC time constant (related to the diode capacitance) increases, thereby slowing down the response speed (as shown in the response time vs. load resistance curve). For optimal performance, especially when the current is small and speed is required, a transimpedance amplifier (TIA) is the preferred circuit. It provides a stable, low-impedance output voltage (V_out = -I_L * R_f) while keeping the photodiode at virtual ground, minimizing the effects of capacitance.

9.3 Kwa nini mkondo wa giza ni muhimu, na jinsi gani joto huathiri?

Dark current (I_D) is the noise current that flows in the absence of light. It sets the lower limit of detectable light. The datasheet specifies a maximum of 10nA at 25°C. This current approximately doubles for every 10°C increase in temperature. Therefore, in high-temperature environments or for extremely low-light detection, dark current can become a significant noise source and must be considered in circuit design (e.g., through temperature compensation or synchronous detection techniques).

9.4 Je, sensor hii inaweza kutumika kwa vyanzo vya mwanga vyenye urefu wa wimbi tofauti na 940nm?

Yes, but sensitivity will be reduced. The spectral response curve shows significant sensitivity in the range of 760nm to 1100nm. For example, it will respond to an 850nm LED, but the generated photocurrent under the same light intensity will be lower than when using a 940nm light source. For precise design, always refer to the relative spectral sensitivity curve (if the full version is provided), or calculate the responsivity at the desired wavelength.

10. Uchambuzi wa Kesi ya Usanifu Vitendo

Kesi ya Muundo: Sensor ya Kukata Mwamba wa Infrared kwa Mlango wa Usalama.

Lengo:Unda sensorer ya kuaminika na ya haraka inayogundua wakati kitu kinavunja mwale usioonekana wa infrared, na hivyo kusababisha kengele ya usalama.

Mpango wa Utekelezaji:

1. Transmitter:A 940nm infrared LED is driven by a pulsed current (e.g., 20mA pulses at 38kHz) to provide immunity against ambient light interference and reduce average power consumption.
2. Receiver:PD204-6B/L3 is placed opposite the transmitter, aligned within its 45° field of view. It is reverse biased at 5V through a load resistor.
3. Signal Conditioning:The small AC photocurrent signal from the photodiode (superimposed on the DC dark current) is fed into a high-gain bandpass amplifier tuned to 38kHz. This filters out DC ambient light and low-frequency noise.
4. Kugundua:Kisha, ishara iliyozidishwa inarekebishwa na kulinganishwa na kizingiti. Wakati mwale haujazuiwa, kuna ishara yenye nguvu ya 38kHz, na pato la kulinganishaji liko kwenye hali ya juu. Wakati kitu kinazuia mwale, ishara hupotea, na kusababisha kulinganishaji kubadilika hadi hali ya chini na kuamilisha kengele.

Kwa nini PD204-6B/L3 Inafaa:Wakati wake wa kukabiliana wa haraka wa 10ns unashughulikia kwa urahisi ishara ya usimbishaji ya 38kHz. Uthabiti wake wa juu kwenye 940nm unahakikisha uwiano mzuri wa ishara-kwa-kelele kutoka kwa LED ya infrared inayolingana. Uwezo mdogo wa umeme hufanya mzunguko kuwa na uwezo wa kudumisha kukabiliana kwa haraka hata kwa vipengele vya kuchuja muhimu.

11. Kanuni ya Uendeshaji

Diodi za mwanga za PIN kama PD204-6B/L3 hufanya kazi kulingana na kanuni ya athari ya mwanga ya ndani. Muundo wa kifaa unaundwa na eneo pana la semiconductor ya asili (I) iliyochanganywa kidogo, iliyowekwa kati ya maeneo ya aina ya P na aina ya N. Wakati fotoni zenye nishati kubwa kuliko pengo la bendi ya semiconductor (k.m., mwanga wa infrared wa 940nm kwenye silikoni) zinapogonga eneo la asili, zinazalisha jozi za elektroni-na-shimo. Diodi inapopigwa kinyume, uga wa umeme uliojengwa ndani katika eneo la kukauka (linaloenea kwenye tabaka la asili) huwafukuza wabebaji wa malipo hayo kuelekea vituo vyao husika, na kuzalisha mkondo wa mwanga (I_L) sawia na nguvu ya mwanga unaoingia. Eneo pana la asili hupunguza uwezo wa umeme na huruhusu ukusanyaji mzuri wa wabebaji waliozalishwa ndani ya kiasi kikubwa, hivyo kuchangia kasi na uthabiti.

12. Mwelekeo wa Sekta na Mazingira

Vichunguzi vya mwanga kama PD204-6B/L3 ni vipengele vya msingi katika uwanja unaokua wa optoelektroniki na kuvizia. Mienendo ya sasa inayochochea mahitaji ya vifaa kama hivi ni pamoja na:

• Otomatiki na Viwanda 4.0:Katika tasnia ya utengenezaji, sensorer zisizo za kugusa zinatumiwa kwa kiasi kikubwa zaidi kwa ajili ya udhibiti wa msimamo, uwepo na ubora.
• Elektroniki za watumiaji:Zimejumuishwa kwenye vifaa kwa ajili ya kugundua ukaribu (mfano, kuzima skrini ya simu mahiri wakati wa mazungumzo), kugundua mwanga wa mazingira ili kudhibiti mwangaza wa onyesho, na utambuzi wa ishara za mikono.
• Wavuti ya Vitu (IoT):Vifaa vya chini vya nguvu, vinavyotegemewa kwa vifaa vya nyumba zenye akili, mifumo ya usalama, na ufuatiliaji wa mazingira.
• Maendeleo ya Teknolojia:Mwelekeo wa jumla ni ushirikiano wa juu zaidi (mfano, photodiode zilizo na kivutio cha kwenye chip), ufungaji mdogo zaidi (vifaa vya kushikilia uso), matumizi ya nguvu ya chini, na utendaji bora katika urefu fulani wa mawimbi (kama LiDAR, kugundua kibaolojia, na matumizi ya mawasiliano ya mwanga). Vifaa kama PD204-6B/L3 vinawakilisha suluhisho zilizokomaa, zinazotegemewa, na zenye gharama nafuu zinazokidhi mahitaji ya kimsingi ya kugundua infrared.

13. Disclaimer and Usage Instructions

Key usage guidelines derived from the datasheet disclaimer include:

1. Specifications are subject to change without notice. Always refer to the latest official datasheet for design.
2. Under normal storage conditions, the product conforms to its published specifications for 12 months from the date of shipment.
3. The characteristic curves show typical performance, not guaranteed minimum or maximum values. Appropriate design margins should be allowed.
4. Strictly adhere to the Absolute Maximum Ratings. Operation beyond these limits may cause immediate or latent damage. The manufacturer assumes no responsibility for damage resulting from misuse.
5. Habari hii ni mali ya siri. Inakatazwa kunakili bila idhini.
6. Sehemu hiiSioSi imetengenezwa au kuthibitishwa kwa matumizi muhimu ya usalama kama vile usaidizi wa maisha ya matibabu, udhibiti wa magari, anga au mifumo ya kijeshi. Kwa matumizi kama hayo, tafadhali wasiliana na mtengenezaji kwa bidhaa zilizothibitishwa maalum.