5mm Infrared LED HIR333C/H0 Datasheet - 5.0mm Package - 850nm Wavelength - 1.65V Forward Voltage - English Technical Document

1. Product Overview

This document details the specifications for a 5.0mm (T-1 3/4) through-hole infrared (IR) emitting diode. The device is designed to emit light at a peak wavelength of 850nm, making it suitable for various infrared sensing and transmission applications. It is housed in a water-clear plastic package, which allows for high radiant output.

1.1 Core Advantages

The primary advantages of this component include its high reliability and high radiant intensity. It features a low forward voltage, which contributes to energy efficiency in circuit designs. The device is constructed using lead-free materials and complies with major environmental and safety regulations, including RoHS, EU REACH, and halogen-free standards (Br < 900ppm, Cl < 900ppm, Br+Cl < 1500ppm).

1.2 Target Market and Applications

This infrared LED is spectrally matched with common silicon phototransistors, photodiodes, and infrared receiver modules. Its typical applications include:

• Free-air transmission systems for data communication.
• Infrared remote control units requiring higher power output.
• Smoke detection systems.
• General infrared applied systems for sensing and detection.

2. In-Depth Technical Parameter Analysis

The following sections provide a detailed breakdown of the device's electrical, optical, and thermal characteristics.

2.1 Absolute Maximum Ratings

These ratings define the limits beyond which permanent damage to the device may occur. They are not intended for continuous operation.

• Continuous Forward Current (IF): 100 mA
• Peak Forward Current (IFP): 1.0 A (Pulse Width ≤100μs, Duty Cycle ≤1%)
• Reverse Voltage (VR): 5 V
• Operating Temperature (Topr): -40°C to +85°C
• Storage Temperature (Tstg): -40°C to +85°C
• Soldering Temperature (Tsol): 260°C for ≤5 seconds
• Power Dissipation (Pd) at 25°C: 150 mW

2.2 Electro-Optical Characteristics

These parameters are measured at an ambient temperature (Ta) of 25°C and define the device's typical performance under specified conditions.

• Radiant Intensity (Ie): The minimum typical value is 7.8 mW/sr at a forward current (IF) of 20mA. Under pulsed conditions (IF=100mA, Pulse Width ≤100μs, Duty ≤1%), the typical radiant intensity is 80 mW/sr. At the peak current of 1A under the same pulsed conditions, it reaches 800 mW/sr.
• Peak Wavelength (λp): 850 nm (typical) at IF=20mA.
• Spectral Bandwidth (Δλ): 45 nm (typical) at IF=20mA, indicating the spectral width at half the maximum intensity.
• Forward Voltage (VF): Ranges from 1.45V (typical) to a maximum of 1.65V at IF=20mA. It increases with higher current, reaching a maximum of 2.40V at 100mA and 5.25V at 1A under pulsed operation.
• Reverse Current (IR): Maximum of 10 μA at VR=5V.
• View Angle (2θ1/2): 30 degrees (typical) at IF=20mA, defining the angular spread where the radiant intensity is at least half of its peak value.

2.3 Thermal Characteristics

The device's performance is temperature-dependent. The maximum power dissipation is rated at 150 mW in free air at 25°C. Designers must consider derating this value when operating at higher ambient temperatures to ensure long-term reliability and prevent thermal runaway.

3. Binning System Explanation

The product is available in different performance grades, or "bins," based on radiant intensity measured at IF=20mA. This allows designers to select a component that precisely matches their application's sensitivity requirements.

The binning structure for radiant intensity is as follows:

• Bin M: 7.8 - 12.5 mW/sr
• Bin N: 11.0 - 17.6 mW/sr
• Bin P: 15.0 - 24.0 mW/sr
• Bin Q: 21.0 - 34.0 mW/sr
• Bin R: 30.0 - 48.0 mW/sr

The datasheet also indicates that the device is available with ranks for Dominant Wavelength (HUE) and Forward Voltage (REF), though specific bin codes for these parameters are not detailed in the provided excerpt.

4. Performance Curve Analysis

Graphical data provides deeper insight into the device's behavior under varying conditions.

4.1 Forward Current vs. Ambient Temperature

This curve shows the derating of the maximum allowable forward current as the ambient temperature increases above 25°C. To maintain reliability, the operating current must be reduced at higher temperatures.

4.2 Spectral Distribution

The graph illustrates the relative radiant power output across the wavelength spectrum, centered around the 850nm peak. The 45nm bandwidth indicates the range of wavelengths emitted.

4.3 Peak Emission Wavelength vs. Ambient Temperature

This relationship shows how the peak wavelength (λp) shifts with changes in the junction temperature. Typically, the wavelength increases slightly with rising temperature, which is a critical factor in applications requiring precise spectral matching with a detector.

4.4 Forward Current vs. Forward Voltage (IV Curve)

This fundamental curve depicts the exponential relationship between the voltage applied across the diode and the resulting current flow. It is essential for designing the current-limiting circuitry (e.g., selecting a series resistor).

4.5 Radiant Intensity vs. Forward Current

This plot demonstrates that radiant intensity increases super-linearly with forward current. However, operating at very high currents (especially DC) leads to increased heat generation and potential efficiency loss, making pulsed operation preferable for high-intensity requirements.

4.6 Relative Radiant Intensity vs. Angular Displacement

This polar plot visually represents the view angle (2θ1/2 = 30°). It shows how the intensity diminishes as the observation angle moves away from the central axis (0°), which is crucial for designing optical systems and aligning emitters with detectors.

5. Mechanical and Package Information

5.1 Package Dimensions

The device conforms to the standard T-1 3/4 (5mm) radial leaded package. Key dimensions include the overall diameter of approximately 5.0mm and a standard lead spacing of 2.54mm (0.1 inches), compatible with standard perforated boards. The dimensional drawing specifies tolerances of ±0.25mm unless otherwise noted. The exact shape of the lens dome and the lead length are defined in the detailed package drawing.

5.2 Polarity Identification

The cathode is typically identified by a flat spot on the plastic lens rim or by the shorter lead. Correct polarity must be observed during circuit assembly to prevent reverse bias damage.

6. Soldering and Assembly Guidelines

Proper handling is critical to prevent mechanical and thermal damage.

6.1 Lead Forming

• Bending must occur at least 3mm from the base of the epoxy bulb.
• Form leads before soldering.
• Avoid applying stress to the package during bending.
• Cut leads at room temperature.
• Ensure PCB holes align perfectly with LED leads to avoid mounting stress.

6.2 Storage Conditions

• Store at ≤30°C and ≤70% Relative Humidity (RH).
• Maximum storage life in original packaging is 3 months.
• For longer storage (up to 1 year), use a sealed container with a nitrogen atmosphere and desiccant.
• Avoid rapid temperature changes in humid environments to prevent condensation.

6.3 Soldering Parameters

Hand Soldering: Iron tip temperature ≤300°C (for a 30W max iron), soldering time ≤3 seconds per lead. Maintain a minimum distance of 3mm from the solder joint to the epoxy bulb.
Wave/Dip Soldering: Preheat temperature ≤100°C for ≤60 seconds. Solder bath temperature ≤260°C for ≤5 seconds. Maintain the 3mm distance rule.
General Rules: Do not apply stress to leads at high temperature. Avoid soldering the same device more than once. Protect the device from shock/vibration while cooling to room temperature. Do not use rapid cooling processes. Follow the recommended soldering profile for wave soldering.

6.4 Cleaning

The datasheet mentions that cleaning should be performed only when necessary, though specific cleaning agent recommendations or ultrasonic cleaning parameters are not detailed in the provided excerpt. Standard practice is to use mild, non-aggressive cleaners compatible with epoxy resin.

7. Packaging and Ordering Information

7.1 Packaging Specification

The device is packed in anti-static bags for ESD protection. The standard packing flow is:
1. 500 pieces per anti-static bag.
2. 5 bags (2,500 pieces) per inner carton.
3. 10 inner cartons (25,000 pieces) per master outside carton.

7.2 Label Form Specification

Product labels include key information for traceability and identification:
- CPN (Customer's Part Number)
- P/N (Manufacturer's Part Number: HIR333C/H0)
- QTY (Packing Quantity)
- CAT (Luminous/Radient Intensity Rank, e.g., M, N, P, Q, R)
- HUE (Dominant Wavelength Rank)
- REF (Forward Voltage Rank)
- LOT No. (Lot Number for traceability)
- Date Code

8. Application Design Considerations

8.1 Typical Application Circuits

The most common drive circuit is a simple series resistor to limit the forward current. The resistor value (R) is calculated using Ohm's Law: R = (Vcc - Vf) / If, where Vcc is the supply voltage, Vf is the LED's forward voltage (use max value for reliability), and If is the desired forward current. For pulsed operation (e.g., in remote controls), a transistor switch is typically used to deliver high peak currents (up to 1A) while maintaining a low duty cycle to keep average power within limits.

8.2 Optical Design Notes

The 30-degree view angle provides a good balance between beam concentration and coverage. For longer range or narrower beam applications, secondary optics (lenses) may be required. The water-clear lens is optimal for 850nm transmission. Ensure the receiver (phototransistor, photodiode, or IC) is spectrally sensitive in the 850nm region for maximum system efficiency.

8.3 Thermal Management

Although the package can dissipate 150mW at 25°C, effective heat sinking through the leads or careful board layout is necessary for continuous operation at high currents or elevated ambient temperatures. Using pulsed drive mode significantly reduces average power dissipation and thermal stress.

9. Technical Comparison and Differentiation

Compared to standard visible LEDs or other IR LEDs, this device's key differentiators are its combination of high radiant intensity (up to 48 mW/sr in Bin R), low forward voltage (typically 1.45V), and comprehensive environmental compliance (RoHS, REACH, Halogen-Free). The use of GaAlAs chip material is standard for high-efficiency 850nm emission. The 5mm package offers a robust through-hole form factor suitable for a wide range of industrial and consumer applications where surface-mount devices may not be ideal.

10. Frequently Asked Questions (FAQ)

Q: Can I drive this LED continuously at 100mA?
A: The Absolute Maximum Rating for continuous forward current is 100mA. However, continuous operation at this maximum current will generate significant heat (Pd ≈ Vf * If). For reliable long-term operation, it is advisable to derate the current, especially if the ambient temperature is above 25°C, or to use a heat sink.

Q: What is the difference between the bins (M, N, P, Q, R)?
A: The bins categorize the minimum and maximum radiant intensity of the LED when driven at 20mA. Bin M has the lowest output (7.8-12.5 mW/sr), and Bin R has the highest (30.0-48.0 mW/sr). Select a bin based on the required signal strength and sensitivity of your receiver circuit.

Q: Why is the forward voltage higher at 1A than at 20mA?
A> This is due to the internal series resistance of the semiconductor die and the bond wires. As current increases, the voltage drop across this resistance (V = I*R) increases, leading to a higher total forward voltage.

Q: How do I achieve the 800 mW/sr radiant intensity?
A: This intensity is specified under pulsed conditions: a forward current of 1A, with a pulse width of 100 microseconds or less, and a duty cycle of 1% or less. This minimizes heating while allowing very high instantaneous optical output.

11. Design and Usage Case Studies

Case Study 1: Long-Range Infrared Remote Control
A designer needs a remote control with a range of over 30 meters. They select the HIR333C/H0 in Bin R for maximum output. The circuit uses a microcontroller to generate modulated data pulses. The LED is driven with 1A pulses (100μs width, 1% duty cycle) via an NPN transistor switch. The high peak intensity ensures a strong signal reaches the distant receiver, while the low duty cycle keeps battery consumption and device heating minimal.

Case Study 2: Proximity Sensor in an Industrial Environment
An automated machine requires a robust proximity sensor. An IR LED and a phototransistor are placed opposite each other across a conveyor path. The LED is driven with a constant 50mA current (derated from the 100mA max for reliability). The 850nm wavelength is less susceptible to interference from ambient visible light than visible red LEDs. The 30-degree beam provides sufficient coverage without excessive spreading. The sensor detects when an object breaks the beam.

12. Operating Principle

An Infrared Light Emitting Diode (IR LED) is a semiconductor p-n junction diode. When a forward voltage is applied, electrons from the n-region recombine with holes from the p-region within the active region of the chip. This recombination process releases energy in the form of photons (light). The specific material used in the chip's active region (in this case, Gallium Aluminum Arsenide - GaAlAs) determines the wavelength of the emitted photons. For GaAlAs, this results in infrared light with a peak wavelength around 850nm, which is invisible to the human eye but easily detectable by silicon-based photodetectors.

13. Technology Trends

The trend in infrared LEDs continues toward higher efficiency (more radiant output per electrical watt input), which allows for either lower power consumption or higher output from the same package. There is also a drive toward higher-speed modulation capabilities for data communication applications like IrDA and optical wireless networks. Packaging is evolving to include surface-mount devices (SMDs) with improved thermal performance for high-power applications, though through-hole packages like the 5mm remain popular for their mechanical robustness and ease of prototyping. Integration with driver circuitry and photodetectors into single modules is another common trend for simplified system design.