HIR7393C 5mm Infrared LED Datasheet - 5.0mm Diameter - 1.45V Forward Voltage - 850nm Wavelength - 150mW Power Dissipation - Technical Documentation

1. Product Overview

This device is a high-intensity infrared emitting diode (IRED) housed in a standard T-1 3/4 (5.0mm) package with a transparent plastic lens. It is designed to emit light with a peak wavelength of 850nm, matching its spectral output to common silicon phototransistors, photodiodes, and infrared receiver modules, thereby ensuring reliable operation in sensing and communication systems.

1.1 Key Features and Core Advantages

• Mwangaza wa Juu:Chini ya mkondo wa mbele wa 20mA, mwangaza wa kawaida unaweza kufikia 15 mW/sr, ukifanikisha usafirishaji wa ishara yenye nguvu.
• Voltage ya Chini ya Mbele:Katika mkondo wa 20mA, voltage ya kawaida ya mbele (V_F) ni 1.45V, inasaidia kupunguza matumizi ya nguvu ya saketi.
• Uthabiti wa juu:Imetengenezwa kwa kutumia nyenzo na mchakato thabiti, inafaa kwa matumizi ya viwanda.
• Haina risasi na inalingana na viwango vya RoHS:Mchakato wa utengenezaji unalingana na mahitaji ya sheria za mazingira.
• Umbali wa kawaida wa pini:2.54mm (0.1 inch) pin pitch, compatible with standard breadboards and PCBs.

1.2 Soko Lengwa na Matumizi

This infrared LED primarily targets electronic system designers and engineers who require invisible light sources. Its main application areas areInfrared Application System, widely including:

• Object Detection and Proximity Sensing
• Infrared data transmission (e.g., remote controls, short-range communication)
• Optical encoders and position sensing
• Barrier systems and security sensors
• Industrial Automation and Machine Vision Lighting

2. Uchambuzi wa kina wa Vigezo vya Kiufundi

2.1 Absolute Maximum Ratings

These ratings define the limits beyond which permanent damage to the device may occur. Operation under these conditions is not guaranteed.

• Continuous Forward Current (I_F):100 mA
• Peak Forward Current (I_FP):1.0 A (pulse width ≤100μs, duty cycle ≤1%)
• Reverse Voltage (V_R):5 V
• Operating Temperature (T_opr):-40°C to +85°C
• Storage temperature (T_stg):-40°C to +100°C
• Power Consumption (P_d):150 mW (at 25°C or below free-air temperature)
• Soldering Temperature (T_sol):260°C, muda ≤5 sekunde

2.2 Photoelectric Characteristics (Ta=25°C)

Hizi ni vigezo vya kawaida vya utendaji chini ya hali maalum za majaribio.

• Nguvu ya mionzi (I_e):Thamani ya chini 7.8, thamani ya kawaida 15 mW/sr @ I_F=20mA. Chini ya hali ya msukumo, @ I_F=100mA inaweza kufikia takriban 50 mW/sr.
• Peak wavelength (λ_p):850 nm (typical) @ I_F=20mA. This wavelength is close to the peak sensitivity of silicon detectors.
• Spectral bandwidth (Δλ):45 nm (typical) @ I_F=20mA. Defined as the spectral width at half maximum intensity.
• Forward voltage (V_F):Typical 1.45V, maximum 1.65V @ I_F=20mA. Typical 1.80V, maximum 2.40V @ I_F=100mA (pulse).
• Reverse current (I_R):Maximum 10 μA @ V_R=5V.
• Viewing angle (2θ_1/2):45 degrees (typical) @ I_F=20mA. This is the half-intensity full angle.

2.3 Thermal Characteristics

Ukadiriaji wa matumizi ya nguvu ya 150mW umebainishwa kwa joto la mazingira la 25°C au chini. Kadiri joto la mazingira linavyoongezeka, kiwango cha juu cha matumizi ya nguvu kinaruhusiwa hupungua. Wabunifu lazima watazamie mkunjo wa kupunguza thamani (ulio katika maelezo ya uainishaji) ili kuhakikisha joto la kiungo halizidi kikomo salama, jambo muhimu kwa uthabiti wa muda mrefu. Masafa ya joto ya uendeshaji ya -40°C hadi +85°C hufanya iwe inafaa kwa mazingira magumu.

3. Grading System Description

HIR7393C inatoa viwango tofauti vya utendaji au "binning" kulingana na kiwango cha mnururisho kilichopimwa kwa I_F= 20mA. Hii inaruhusu uteuzi wa kifaa kinachokidhi mahitaji maalum ya mwangaza.

Binning ya kiwango cha mnururisho (Vipimo: mW/sr):

• M-gear:Minimum 7.8, maximum 12.5
• N-gear:Thamani ya chini 11.0, thamani ya juu 17.6
• Kiwango cha P:Thamani ya chini 15.0, thamani ya juu 24.0
• Kiwango cha Q:Minimum value 21.0, maximum value 34.0

Selecting a higher gear (e.g., Q gear) ensures a higher minimum radiant intensity, which is crucial for maximizing the signal-to-noise ratio in sensing applications or increasing infrared transmission distance.

4. Performance Curve Analysis

4.1 Relationship Between Forward Current and Ambient Temperature

Mkunjo wa kupunguza mzigo unaonyesha uhusiano kati ya mkondo wa juu unaoruhusiwa unaoendelea wa mbele na joto la mazingira. Kadiri joto linavyoongezeka, ni lazima kupunguza mkondo wa juu ili kuzuia joto kupita kiasi, na kuhakikisha joto la kiungo linabaki ndani ya mipaka salama. Mkunjo huu ni muhimu sana kwa kubuni sakiti zinazotegemewa, hasa katika mazingira yenye joto la juu.

4.2 Spectral Distribution

The spectral distribution curve plots the relationship between relative radiant intensity and wavelength. It confirms the peak emission at 850nm and a spectral bandwidth of approximately 45nm. The curve is relatively symmetrical and centered at 850nm, making it well-suited for matching with silicon-based detectors whose peak sensitivity is around 800-900nm.

4.3 Relationship Between Radiant Intensity and Forward Current

Mkunjo huu unaonyesha kuwa nguvu ya mionzi huongezeka kadri mkondo wa mwelekeo unavyoongezeka, lakini uhusiano huo sio wa mstari kabisa, haswa katika mikondo ya juu, kutokana na joto na kushuka kwa ufanisi. Kufanya kazi katika hali ya msukumo (kama ilivyobainishwa katika mtihani wa 100mA) huruhusu nguvu ya kilele ya juu zaidi, bila kuzalisha mkusanyiko wa joto unaohusishwa na uendeshaji endelevu.

4.4 Uhusiano wa Nguvu ya Mionzi ya Jamaa na Uhamisho wa Pembe

Grafu hii ya polar inaonyesha muundo wa utoaji wa anga wa LED. Pembe ya maono ya digrii 45 (upana wa nusu ya kilele) inaonyesha upana wa boriti ulio wa wastani. Ukubwa uko juu zaidi kwenye digrii 0 (kwenye mhimili) na hupungua kwa utaratibu kuelekea ukingo. Muundo huu ni muhimu kwa kubuni mfumo wa optiki ili kuhakikisha usambazaji wa kutosha au kuzingatia.

5. Taarifa za Mitambo na Ufungaji

5.1 Package Dimensions

The device is housed in a standard T-1 3/4 (5.0mm diameter) round package. Key dimensions include:

• Overall Diameter: 5.0mm.
• Pin pitch: 2.54mm (standard).
• Pin diameter: typically 0.45mm.
• Package height: approximately 8.6mm from the mounting plane to the top of the dome.
• Tolerance: ±0.25mm unless otherwise specified in the detailed dimension drawing.

For critical layout and pad design on the PCB, refer to the precise mechanical drawing.

5.2 Polarity Identification

Ukingo wa lenzi ya plastiki ya LED kwa kawaida huwa na uso wa gorofa au mfinyo ambao unaonyesha upande wa cathode (hasipo). Pini ya cathode kwa kawaida pia ni pini fupi, ingawa inaweza kukatwa wakati wa usakinishaji. Hakikisha kuthibitisha uchanganuzi wa upeo kabla ya kuchomelea ili kuzuia uharibifu kutokana na mkazo wa nyuma.

6. Welding and Assembly Guide

6.1 Uundaji wa Pini

• Pindua pini umbali wa angalau 3mm kutoka kwenye mzizi wa taa ya epoxy.
• Pini inapaswa kuundwa kabla yakuchomelea soldering.
• kufanywa. Epuka kutumia mkazo kwenye kifurushi cha LED wakati wa kupinda.
• Kata pini kwenye joto la kawaida.
• Hakikisha mashimo ya PCB yanalingana kikamilifu na pini za LED ili kuepuka mkazo wa usakinishaji.

6.2 Uhifadhi

• Recommended storage conditions: ≤30°C and relative humidity (RH) ≤70%.
• Shelf life under these conditions: 3 months from the date of shipment.
• For longer storage (up to 1 year): use a sealed container with a nitrogen atmosphere and a desiccant.
• Avoid sudden temperature changes in humid environments to prevent condensation.

6.3 Welding Process

General Rules:Maintain a minimum distance of 3mm from the solder joint to the epoxy resin LED.

Manual Soldering:

• Soldering Iron Tip Temperature: Maximum 300°C (suitable for irons up to 30W).
• Muda wa kulehemu kwa kila pini: kwa upeo sekunde 3.

Kulehemu kwa kuzamisha/Kulehemu kwa wimbi:

• Joto la kukausha: Hadi 100°C (kwa muda wa sekunde 60 kwa upeo).
• Joto la chombo cha solder: Hadi 260°C.
• Muda wa kukaa kwenye solder: Hadi sekunde 5.

Uangalizi muhimu:

• Epuka kutumia mkazo kwenye pini wakati wa hatua ya joto la juu.
• Usifanye uuzaji wa kuzamishwa/wa mkono zaidi ya mara moja.
• Baada ya kuuza, linda LED kutokana na mshtuko/uteteko wa mitambo kabla ya kupoa hadi joto la kawaida.
• Epuka mchakato wa kupoa haraka.
• Tumia joto la chini iwezekanavyo linaloweza kufanya mwamba wa kuunganishwa kuwa thabiti.

6.4 Usafishaji

• Ikiwa ni lazima, tumia isopropanoli kwa kusafisha tu kwa joto la kawaida, muda ≤ dakika 1.
• Kausha kwa joto la kawaida kabla ya matumizi.
• Epuka usafishaji wa mawimbi ya sauti, isipokuwa ikiwa ni muhimu kabisa na imethibitishwa mapema, kwa sababu inaweza kusababisha uharibifu wa mitambo.

6.5 Udhibiti wa Joto

Thermal management must be considered during the circuit design stage. Current must be appropriately derated according to the ambient temperature, as shown in the derating curve. Sufficient PCB copper area (thermal pad) around the LED pins helps with heat dissipation. For high-current or high-duty-cycle pulsed operation, additional cooling measures may be required.

7. Ufungaji na Taarifa za Kuagiza

7.1 Vipimo vya Ufungaji

• Inner Packaging:500 pieces per anti-static bag.
• Inner Box:5 bags per inner box (2500 tablets in total).
• Outer Carton/Master Carton:10 inner boxes per outer carton (25,000 tablets in total).

7.2 Label Information

Lebo ya bidhaa ina viashiria muhimu kadhaa:

• CPN:Nambari ya Bidhaa ya Mteja.
• P/N:Nambari ya Bidhaa ya Mtengenezaji (mfano, HIR7393C).
• QTQ:Idadi ya vifurushi ndani ya mfuko.
• CAT:Luminous Intensity Grade (Bin Code, e.g., M, N, P, Q).
• HUE:Dominant Wavelength Grade.
• REF:Forward voltage rating.
• LOT No:Production lot number, used for traceability.

8. Mapendekezo ya Utumizi na Mazingatio ya Ubunifu

8.1 Saketi ya Kawaida ya Utumizi

Saketi inayotumika sana ni kwa kuunganishwa mfululizo na kipingamanishaji cha kikomo cha mkondo. Thamani ya kipingamanishaji inakokotolewa kwa kutumia Kanuni ya Ohm: R = (V_{Power supply}- V_F) / I_F. For example, using a 5V power supply, V_F=1.45V, expected I_F=20mA: R = (5 - 1.45) / 0.02 = 177.5Ω. A standard 180Ω resistor will be suitable. For pulse operation requiring higher intensity, a transistor or MOSFET switch controlled by a microcontroller is typically used.

8.2 Design Considerations

• Current Drive:Always drive LEDs using a constant current source or a voltage-limited source to prevent thermal runaway.
• Reverse Voltage Protection:The maximum reverse voltage is only 5V. In circuits where reverse bias may occur (e.g., AC coupling, inductive loads), a protection diode should be connected in parallel across the LED (cathode to anode).
• Optical Design:When designing lenses, reflectors, or apertures for the system, consider a 45-degree field of view. Transparent lenses are suitable for use with external optical components.
• Detector Matching:Hakikisha vichunguzi vilivyooanishwa (transista nyeti kwa mwanga, diodi ya mwanga, IC ya kupokea) vinavyohisi katika eneo la 850nm kwa utendaji bora zaidi.

9. Technical Comparison and Differentiation

Ikilinganishwa na LED ya kawaida inayoonekana au LED nyingine ya infrared, HIR7393C ina faida maalum:

• Ikilinganisha na LED ya mwanga unaoonekana:Inatoa wigo wa karibu na infrared, usioonekana kwa jicho la binadamu, na kufanya iwe chaguo bora kwa hisia na mawasiliano ya siri.
• Ikilinganisha na LED ya infrared ya 940nm:Mwanga wa 850nm unagunduliwa kwa urahisi zaidi na kigunduzi cha kawaida cha silikoni (ambacho kina usikivu zaidi karibu na 800-900nm), na unaonekana kupitia kamera za dijiti fulani kama mwanga mwekundu dhaifu, hivyo kusaidia katika usawazishaji wakati wa ubunifu wa mfano.
• Ikilinganishwa na LED ya chini ya nguvu ya infrared:Kipimo chake cha juu cha nguvu ya mionzi (P, Q) hutoa pato lenye nguvu zaidi, likifanikisha umbali mrefu au uadilifu bora wa ishara katika mazingira yenye kelele.
• Ikilinganishwa na ufungashaji usio wa kawaida:Ufungaji wa T-1 3/4 upo kila mahali, unanunulika kwa urahisi, unaweza kutengenezwa kwa mfano na kubadilishwa kwa urahisi.

10. Maswali Yanayoulizwa Mara kwa Mara (FAQ)

Q1: Naweza kuiendesha LED hii moja kwa moja kwa kutumia pini ya microcontroller?
A: Inategemea uwezo wa pato la sasa wa pini ya microcontroller. Pini nyingi za MCU zinaweza kutoa 20mA, lakini hii kwa kawaida iko kwenye kikomo cha juu. Kwa ujumla ni salama zaidi na kupendekezwa kutumia transistor rahisi (kwa mfano, NPN kama 2N3904) kama swichi kuendesha LED, ikidhibitiwa na pini ya MCU.

Q2: Kwa nini sasa ya juu ya msukumo (1A) ni kubwa zaidi kuliko sasa ya kuendelea (100mA)?
A: Joto linalozalishwa linalingana moja kwa moja na mraba wa sasa (I²R). A very short pulse (≤100μs) combined with a low duty cycle (≤1%) does not allow sufficient time for the LED chip to accumulate significant heat, thereby preventing thermal damage. Continuous operation at high currents leads to overheating.

Q3: What does "spectral matching" mean?
A: This means the LED's peak emission wavelength (850nm) is well-matched to the peak spectral sensitivity of common silicon-based photodetectors. This match maximizes the electrical signal generated by the detector for a given amount of infrared light, thereby improving system efficiency and signal-to-noise ratio.

Q4: How to select the correct bin (M, N, P, Q)?
A: Select based on your system's sensitivity requirements. If you require consistently high output (e.g., for longer distances or penetrating attenuating materials), specify the P or Q bin. For cost-sensitive applications where the minimum brightness requirement is not high, the M or N bin may be sufficient. Please refer to the binning table for exact minimum/maximum values.

11. Practical Design and Usage Examples

11.1 Simple Object Proximity Sensor

A classic application is a reflective object sensor. Place the HIR7393C adjacent to a phototransistor. The LED illuminates the area in front of the sensor. When an object approaches, it reflects the infrared light back to the phototransistor, causing its collector current to increase. This change can be detected by a comparator or microcontroller ADC, thereby triggering an action. The LED's 45-degree beam provides a good balance between spot size and intensity for this type of sensing.

11.2 Infrared Data Link

For simple serial data transmission (e.g., TV remote control), an LED can be driven with high current (e.g., 100mA pulses) according to the modulated digital signal (e.g., 38kHz carrier). The high radiant intensity in pulse mode allows for a reasonable transmission range. The receiver side will use a matching infrared receiving module (with built-in demodulator) tuned to the same frequency.

12. Working Principle

An infrared emitting diode (IRED) is a semiconductor p-n junction diode. When forward biased, electrons from the n-region and holes from the p-region are injected into the active region. When these charge carriers recombine, they release energy. In an IRED made from gallium aluminum arsenide (GaAlAs), this energy is released primarily as photons in the infrared spectrum (approx. 850nm in this case). The transparent epoxy package acts as a lens, shaping the emitted light into a characteristic beam pattern. The efficiency of this electroluminescent process determines the radiant intensity for a given drive current.

13. Mwelekeo wa Teknolojia

Ingawa msingi wa kifuniko cha T-1 3/4 na teknolojia ya 850nm tayari imekomaa, mwelekeo wa LED za infrared unajumuisha:

• Ufanisi wa Juu Zaidi:Uboreshaji endelevu wa sayansi ya nyenzo unalenga kutoa nguvu zaidi ya mwanga (nguvu ya mionzi) kwa kila kitengo cha nguvu ya umeme inayotumiwa, na hivyo kupunguza joto na matumizi ya nishati.
• Wigo Nyembamba Zaidi:Baadhi ya programu, kama vile kugundua gesi au mawasiliano ya kasi ya juu, hufaidika kutokana na LED zenye urefu maalum na nyembamba wa mionzi.
• Vifaa vilivyounganishwa:Mwelekeo ni pamoja na kuunganisha LED za infrared na vigunduzi vya mwanga kwenye kifuniko kimoja (mtindo wa kuunganisha mwanga) au kuunganisha na saketi za kuendesha, ili kurahisisha ushirikiano wa mfumo.
• Kupunguzwa kwa ukubwa:Ingawa kifurushi cha 5mm bado kinavuma, vifurushi vya vifaa vinavyowekwa kwenye uso (SMD) vinazidi kuwa maarufu katika usanikishaji wa otomatiki na muundo mzito.
• Usalama wa macho:HIR7393C inawakilisha kipengele cha kuaminika na rahisi kueleweka, kinachoendelea kutumika kama moduli ya msingi ya ujenzi katika mifumo mingi ya kihisia na udhibiti wa umeme.

HIR7393C inawakilisha kijenzi cha kuaminika na kinachoeleweka vizuri ambacho kinaendelea kutumika kama kipengele cha msingi katika mfumo mbalimbali wa elektroniki za kugundua na kudhibiti.