TO-220-2L Package 650V SiC Schottky Diode EL-SAF01 665JA Datasheet - Package Size 15.6x9.99x4.5mm - Voltage 650V - Current 16A - Technical Documentation

1. Product Overview

EL-SAF01 665JA is a silicon carbide Schottky barrier diode specifically designed for high-efficiency, high-frequency power conversion applications. The device utilizes a standard TO-220-2L package and leverages the superior material properties of silicon carbide to achieve performance far exceeding that of traditional silicon-based diodes. Its core function is to provide unidirectional current conduction while featuring extremely low switching losses and reverse recovery charge, making it an ideal choice for modern power supplies and inverters with demanding requirements for efficiency and power density.

The primary target market for this component includes designers and engineers working on switched-mode power supplies, solar conversion systems, uninterruptible power supplies, motor drive controllers, and data center power infrastructure. Its main advantage lies in enabling higher-frequency system designs, which allows for a reduction in the size of passive components (such as inductors and capacitors), leading to savings in overall system cost and volume. Furthermore, its low thermal resistance reduces cooling requirements, facilitating simpler and more reliable thermal management solutions.

2. In-depth Technical Parameter Analysis

2.1 Electrical Characteristics

Vigezo vya umeme vinabainisha mipaka ya uendeshaji na utendaji wa diode chini ya hali maalum.

• Upeo wa juu wa kurudia wa voltage ya nyuma:650V. Hii ndio voltage ya juu zaidi ya papo hapo ambayo diode inaweza kustahimili katika mwelekeo wa upendeleo wa nyuma bila kuvunjika. Inabainisha viwango vya voltage kwa matumizi kama vile urekebishaji wa AC ya 400V au ngazi ya PFC ya kuongeza.
• Continuous Forward Current:16A. This is the maximum average forward current that the device can conduct continuously, typically specified at a case temperature of 25°C. Derating is required at higher ambient temperatures.
• Forward Voltage:At IF=16A, Tj=25°C, the typical value is 1.5V, with a maximum of 1.85V. This parameter is crucial for calculating conduction losses. The datasheet also specifies the VF value at the maximum junction temperature, which is typically higher and very important for worst-case loss calculations.
• Reverse Current:Extremely low leakage current, with a typical value of 2µA at VR=520V, Tj=25°C. Even at high temperatures, its leakage current remains at a manageable level. Low leakage current minimizes standby power consumption.
• Total Capacitance Charge:This is a key parameter for silicon carbide Schottky diodes, with a typical value of 22nC at VR=400V. Unlike conventional diodes, silicon carbide Schottky diodes have no minority carrier storage, so their switching losses are primarily capacitive. QC represents the charge that must be supplied/released per switching cycle, directly impacting switching losses. This low value enables high-frequency operation.

2.2 Thermal Characteristics

Thermal management is crucial for reliability and performance.

• Upinzani wa joto kutoka kwenye kiungo hadi kifuniko:Thamani ya kawaida ni 1.3°C/W. Thamani hii ndogo inaonyesha ufanisi wa juu wa uhamishaji wa joto kutoka kwenye kiungo cha semiconductor hadi kifuniko cha kifurushi. Inaruhusu kuondoa kwa ufanisi joto linalotokana na matumizi ya nguvu kupitia kipozajoto kilichounganishwa kwenye kifuniko.
• Joto la juu kabisa la kiungo:175°C. This is the absolute maximum temperature that a silicon carbide junction can reach. Operating near this limit reduces long-term reliability, so it is recommended to design with a margin.
• Total Power Dissipation:115W at Tc=25°C. This is the maximum power the device can dissipate under ideal cooling conditions. In practical applications, the allowable dissipation power is lower and depends on the heat sink's ability to keep the case temperature low.

2.3 Viwango Vya Juu na Uimara

These ratings define the absolute limits beyond which permanent damage may occur.

• Surge Non-Repetitive Forward Current:56A for a 10ms half-sine wave. This rating indicates the diode's ability to withstand short-circuit or surge current events and is a key factor for reliability under fault conditions.
• Storage Temperature Range:-55°C to +175°C. Defines the safe temperature range for the device when it is not powered.
• Torque ya Usakinishaji:Kwa skrubu za M3 au 6-32, ni 0.8 hadi 8.8 N·m. Torque inayofaa ni muhimu kwa kuwasiliana vizuri kwa joto kati ya jokofu ya kifuniko na jokofu ya joto.

3. Uchambuzi wa Mkunjo wa Utendaji

Mwongozo wa data unatoa uwakilishi wa picha wa tabia ya kifaa, ambao ni muhimu kwa muundo wa kina.

• Sifa za Voltage ya Mbele - Ya Sasa ya Mbele:Mchoro huu unaonyesha uhusiano kati ya voltage ya mbele na sasa ya mbele kwenye joto tofauti la kiungo. Inatumika kwa hesabu sahihi ya upotezaji wa uendeshaji katika sehemu mbalimbali za uendeshaji, sio tu sehemu moja ya data iliyotolewa kwenye jedwali. Curve kawaida huonyesha kwamba kwa sasa fulani, VF hupungua kidogo kadri joto linavyoongezeka, ambayo ni sifa ya diode ya Schottky.
• Reverse Voltage - Reverse Current Characteristic:The relationship between reverse leakage current and reverse voltage is plotted, typically at multiple temperatures. It helps designers understand off-state losses and ensures that the leakage current at the application's maximum voltage and temperature is acceptable.
• Reverse Voltage - Junction Capacitance Characteristic:Inaonyesha jinsi capacitance ya junction ya diode inavyobadilika kulingana na voltage ya kinyume. Capacitance hupungua kadri voltage ya kinyume inavyoongezeka. Mchoro huu ni muhimu sana kwa kuiga tabia ya kubadili yenye capacitance na kukokotoa QC katika voltage maalum ya uendeshaji.
• Tabia ya Upeo wa Sasa wa Mbele dhidi ya Joto la Kasha:Inaonyesha jinsi upeo wa sasa unaoruhusiwa wa mbele unaoendelea lazima upunguzwe kadri joto la kasha linavyopanda. Huu ndio mchoro mkuu wa usanidi wa joto, unaoamua utendakazi unaohitajika wa kipoezi joto.
• Uhusiano wa Matumizi ya Nguvu na Joto la Kasha:Kama ilivyo kwa kupunguza sasa, hii inaonyesha jinsi matumizi ya nguvu yanayoruhusiwa ya juu yanavyopungua kadiri joto la kifuniko linavyoongezeka.
• Tabia ya Msukumo wa Sasa - Upana wa Pigo:Inaelezea kwa kina uwezo wa msukumo wa sasa kwa upana wa pigo tofauti na ms 10 wa kawaida. Inaruhusu tathmini ya uwezo wa kustahimili chini ya hali mbalimbali za mabadiliko ya ghafla.
• Stored Capacitor Energy vs. Reverse Voltage Characteristic:The relationship between stored capacitor energy and reverse voltage is plotted. Switching loss energy can be derived from this.
• Transient Thermal Impedance vs. Pulse Width Characteristic:Ni muhimu kwa kutathmini kupanda kwa joto wakati wa msukumo mfupi wa nguvu. Upinzani wa joto wa msukumo mmoja mfupi ni chini ya upinzani wa joto wa kiunga cha kudumu kutoka kwa kiunga hadi kifuniko, kuruhusu nguvu ya papo hapo ya juu bila kuwasha kiunga kupita kiasi.

4. Taarifa za Mitambo na Ufungaji

4.1 Package Outline and Dimensions

Kifaa hiki kinatumia ufungaji wa kiwango cha tasnia TO-220-2L. Vipimo muhimu katika karatasi ya data ni pamoja na:

• Urefu wa jumla: 15.6 mm
• 总宽度：9.99 mm总高度：4.5 mm
• Umbali kati ya pini: 5.08 mm
• Umbali kati ya mashimo ya kufunga: 8.70 mm
• Inatoa vipimo vya heatsink na maelezo ya umbo la pini ili kurahisisha ujumuishaji wa kiufundi na muundo wa PCB pad.

4.2 Pin Configuration and Polarity

Pini definitions are clear:

• Pini 1:Kathodi.
• Pini 2:Anodi.
• Kifurushi:Kipande hiki cha chuma cha kutolea joto kimeunganishwa kwa umeme na kathodi. Muunganisho huu ni muhimu kwa usalama na muundo: kipande cha kutolea joto kitakuwa kwenye uwezo wa kathodi, kwa hivyo lazima kijitenge ikiwa sehemu nyingine katika mzunguko ziko kwenye uwezo tofauti. Inahitajika kutumia kifaa cha kujitenga kinachofaa.

4.3 Recommended PCB Pad Layout

A surface mount gull-wing lead pad layout is recommended for PCB design. This ensures good solder joint formation and mechanical stability when the device is mounted on the PCB, typically in conjunction with a heatsink.

5. Mwongozo wa Uchomeaji na Usanikishaji

Ingawa dondoo zilizotolewa hazina mkunjo wa kina wa uchomeaji wa reflow, mwongozo wa jumla unaofaa kwa vifaa vya nguvu vya kifurushi cha TO-220 ni kama ifuatavyo:

• Uendeshaji:Zingatia hatua za ulinzi dhidi ya umeme wa tuli, kwani vifaa vya silicon carbide vinaweza kuwa nyeti.
• Uchomaji wa umeme:Kwa usakinishaji wa pini kupitia tundu, unaweza kutumia mbinu za kawaida za kuchomelea wimbi au kuchomelea kwa mkono. Joto la kifurushi halipaswi kuzidi joto la juu la uhifadhi kwa muda mrefu. Kwa umbo la pini la usakinishaji wa uso, fuata mkunjo wa kawaida wa kurejesha mtiririko kwa vipengele visivyo na risasi.
• Usakinishaji wa kifaa cha kupoza joto:
  1. Hakikisha uso wa usanikishaji wa radiator na kibao cha joto cha diode ni safi, laini na bila makovu.
  2. Paka safu nyembamba na sawa ya nyenzo ya kiolesura cha joto ili kuboresha uhamishaji wa joto.
  3. Kama unahitaji kutenganishwa kwa umeme, tumia vifuniko vya kuzuia umeme na visokoto vilivyo na bega. Paka mafuta ya kupitishia joto pande zote mbili za kizuiwa umeme.
  4. Tumia momenti maalum ya kusakinisha kufunga diode kwa kutumia visokoto vya M3 au 6-32 na nati. Epuka kukaza kupita kiasi, ili kuepuka kuharibu kifuniko au kuteleza nyuzi.
• Uhifadhi:Store in a dry, anti-static environment within the specified temperature range.

6. Mapendekezo ya Utumiaji

6.1 Typical Application Circuit

• Power Factor Correction Boost Diode:In a continuous conduction mode boost PFC circuit, the diode's low QC and fast switching are crucial for achieving high efficiency at high switching frequencies. It withstands high voltage stress when the main switch is on.
• Solar Microinverter Output Stage:Used in high-frequency inverter bridges or as freewheeling diodes. Their high-temperature capability suits the demanding environmental conditions of solar applications.
• Uninterruptible Power Supply Inverter/Converter:Acts as freewheeling or clamping diodes in DC-AC inverter or DC-DC converter stages, improving overall system efficiency.
• Motor drive DC bus clamping/freewheeling diode:By clamping the inductive energy from the motor windings, it protects IGBTs or MOSFETs from voltage spikes.

6.2 Key Design Considerations

• Mzunguko wa kufanyia kazi kwa kuzuia mshtuko (Buffer circuit):Kwa sababu ya kasi kubwa ya kubadili na QC ya chini, inductance ya vimelea katika mzunguko inaweza kusababisha kupindukia kwa voltage kwa kiwango kikubwa. Ni muhimu sana kubuni mpangilio wa PCB kwa uangalifu ili kupunguza eneo la kitanzi iwezekanavyo. Inaweza kuhitajika kutumia mzunguko wa RC wa kufanyia kazi kwa kuzuia mshtuko kwenye diode ili kukandamiza milio.
• Ubunifu wa joto (Thermal design):Compute total power loss. Use maximum junction temperature, junction-to-case thermal resistance, and estimated heatsink thermal resistance to ensure junction temperature remains within safe margin.
• Parallel operation:The datasheet indicates that the device can be operated in parallel without thermal runaway. This is due to the positive temperature coefficient of forward voltage at high current, which promotes current sharing. However, for optimal current sharing, ensure symmetrical layout and use separate gate resistors when driving the associated switches.
• Voltage derating:To enhance long-term reliability, especially in high-temperature or high-reliability applications, derating of the operating reverse voltage should be considered.

7. Ulinganishi wa Teknolojia na Faida

Compared to standard silicon fast recovery diodes or even ultrafast recovery diodes, the EL-SAF01 665JA offers significant advantages:

• Malipo ya kurejesha kinyume yanayokaribia sifuri:Diodi za silikoni zina Qrr kubwa kutokana na uhifadhi wa wabebaji wachache, na kusababisha mwinuko mkubwa wa sasa na upotezaji wakati wa kuzima. Diodi za Schottky za Silikoni Kabati ni vifaa vya wabebaji wengi, kwa hivyo Qrr inaweza kupuuzwa. Upotezaji wa kubadili ni wa uwezo tu, na ni chini sana kuliko upotezaji unaotokana na Qrr.
• Joto la juu la uendeshaji:The wide bandgap of silicon carbide allows a maximum junction temperature of 175°C, compared to 150°C or 125°C for many silicon diodes, enabling operation in hotter environments or with smaller heat sinks.
• Higher Switching Frequency Capability:The combination of low QC and no Qrr makes efficient operation at frequencies well above 100 kHz possible, thereby allowing magnetic components to be significantly reduced in size.
• Chini ya voltage chanya kwa joto la juu:Ingawa VF kwenye joto la kawaida ya chumba inaweza kuwa sawa na diode ya Schottky ya silicon, diode ya Schottky ya silicon carbide ina ongezeko dogo la VF kwa kuongezeka kwa joto, na hivyo kuwa na utendaji bora wa uendeshaji kwa joto la juu.

8. Maswali Yanayoulizwa Mara kwa Mara

8.1 Kulingana na Vigezo vya Kiufundi

Swali: QC ni 22nC. Je, unaweza kuhesabu hasara ya kubadili-switchi vipi?
Jibu: Hasara ya nishati kwa kila mzunguko wa kubadili-switchi ni takriban E_sw ≈ 0.5 * QC * V, ambapo V ni voltage ya kinyume inayoshikiliwa wakati wa kuzima. Kwa mfano, kwa 400V, E_sw ≈ 0.5 * 22nC * 400V = 4.4µJ. Zidisha kwa mzunguko wa kubadili-switchi kupata hasara ya nguvu: P_sw = E_sw * f_sw. Kwa 100 kHz, P_sw ≈ 0.44W.

Swali: Kwa nini kifuniko kimeunganishwa na kathodi? Je, daima inahitaji kutengwa?
Jibu: Kwa sababu za joto na mitambo, chipu ya ndani imewekwa kwenye msingi ambao umewasilishwa kwa umeme na sahani ya joto ya kathodi. Ikiwa sahani ya joto ina tofauti ya uwezo wa umeme na kathodi kwenye mzunguko, basi kutengwa kunahitajika. Ikiwa kathodi imegundwa na sahani ya joto pia imegundwa, kutengwa kunaweza kusiwe lazima, lakini kwa kawaida hutumiwa kama desturi bora ya usalama.

Swali: Je, naweza kutumia diode hii kuchukua nafasi ya diode ya silicon moja kwa moja kwenye mzunguko uliopo?
Jibu: Haiwezi kubadilishwa moja kwa moja bila ukaguzi. Ingawa viwango vya voltage na sasa vinaweza kuendana, kasi ya haraka sana ya kubadili inaweza kusababisha kupindukia kwa voltage kali na usumbufu wa sumakuumeme kutokana na vigezo vya mzunguko vya vimelea, ambavyo sio shida kwa diodi za polepole za silikoni. Ni lazima kutathmini upya mpangilio wa PCB na muundo wa mzunguko wa kufunga.

9. Miundo Halisi na Mifano ya Matumizi

Utafiti wa Kesi: Kiwango cha PFC cha Chanzo cha Nguvu cha Seva cha 2kW chenye Uzito Mkubwa.Mhandisi alibadilisha diode ya silikoni ya haraka sana ya 600V/15A na EL-SAF01 katika PFC ya kuongeza ya 80kHz CCM. Mahesabu yalionyesha kuwa diode ya silikoni kaboni ilipunguza hasara za kubadili kwa takriban 60%, na kuboresha kidogo hasara za uendeshaji. Kuokoa hasara ya 0.86W kwa kila diode kuliruhusu kuongeza mzunguko wa kubadili hadi 140kHz, na hivyo kupunguza ukubwa wa inductor ya kuongeza kwa takriban 40%, kukidhi lengo la kuongeza msongamano wa nguvu. Kwa sababu jumla ya hasara ilipungua, kifaa cha kupoza joto kilichopo bado kinatosha.

Uchunguzi wa kesi: Daraja la H la kibadilishaji-jumla ndogo cha nishati ya jua.Katika kibadilishaji-jumla ndogo cha 300W, diode nne za EL-SAF01 zilitumika kama diode za mwendelezo wa mtiririko kwa MOSFET za daraja la H. Ukadiriaji wake wa joto la juu ulihakikisha uaminifu katika mazingira ya paa ambapo joto la kifaa linaweza kuzidi 70°C. QC ya chini ilipunguza hasara kwa kiwango cha juu cha kubadili, ikisaidia kufikia ufanisi wa juu wa ubadilishaji jumla, ambayo ni muhimu kwa ukusanyaji wa nishati ya jua.

10. Kanuni ya Uendeshaji

A Schottky diode is formed by a metal-semiconductor junction, which is different from a standard PN junction diode. The EL-SAF01 uses silicon carbide as the semiconductor. The Schottky barrier formed at the metal-SiC interface allows only majority carrier conduction. When forward-biased, electrons are injected from the semiconductor into the metal, allowing current to flow with a relatively low forward voltage drop. When reverse-biased, the Schottky barrier prevents current flow. The key difference from a PN diode is the absence of minority carrier injection and storage. This means there is no diffusion capacitance associated with stored charge in the drift region, resulting in the "zero reverse recovery" characteristic. The only capacitance is the junction depletion layer capacitance, which is voltage-dependent and gives rise to a measurable Qc. The wide bandgap of silicon carbide provides a high breakdown field strength, enabling a 650V rating in a relatively small chip size, and its high thermal conductivity aids in heat dissipation.

11. Mwelekeo wa Teknolojia

Vifaa vya nguvu vya Silicon Carbide, vinavyojumuisha diodes za Schottky na MOSFET, vinawakilisha mwelekeo muhimu wa elektroni ya nguvu kuelekea ufanisi wa juu, masafa, na msongamano wa nguvu. Soko linahama kutoka vifaa vya 600-650V hadi viwango vya voltage ya juu zaidi, wakati huo huo, kadiri ukubwa wa wafers unavyoongezeka na uzalishaji unavyoboresha mavuno, gharama kwa kila ampere inapungua ni mwelekeo mwingine. Ujumuishaji ni mwelekeo mwingine, na moduli zinazochanganya MOSFET za Silicon Carbide na diodes za Schottky zimeibuka. Zaidi ya hayo, utafiti unaendelea kuboresha kiolesura cha kizuizi cha Schottky, ili kupunguza zaidi kushuka kwa voltage ya mbele na kuboresha uaminifu. Kimataifa, viwango vya ufanisi wa nishati na umeme wa mifumo ya usafiri na nishati mbadala vinasukuma utumiaji wa Silicon Carbide.