Solid State Relay 8-Pin DIP Dual-Channel Datasheet - 8-Pin DIP Package - 400V/600V Breakdown Voltage - 120mA/50mA Load - Technical Documentation

1. Product Overview

The EL840A and EL860A are general-purpose dual-channel Solid-State Relays (SSRs) housed in a compact 8-pin DIP package. These devices utilize an optocoupler mechanism, featuring an AlGaAs infrared LED on the input side, which is optically isolated from the high-voltage output detection circuit on the output side. The output detector consists of a photovoltaic diode array that drives the MOSFET switches. This configuration provides electrical functionality equivalent to two independent Form A (normally open) electromechanical relays, offering higher reliability, longer lifespan, and faster switching speeds compared to mechanical relays.

1.1 Core Advantages and Target Market

Faida kuu ya mfululizo huu wa SSR inatokana na muundo wake wa hali ngumu. Faida muhimu ni pamoja na kutokuwa na sehemu zinazosonga kabisa, na hivyo kuondoa mtikisiko wa mawasiliano, umeme wa ardhini na mmomonyoko wa mitambo, na kufikia maisha marefu ya uendeshaji na uaminifu wa juu. Utofautishaji wa mwanga kati ya ingizo na pato hutoa voltage ya utofautishaji hadi Vrms 5000, na kuimarisha usalama wa mfumo na uwezo wa kukabiliana na kelele. Vifaa hivi vimeundwa kudhibiti ishara za analogi za kiwango cha chini kwa unyeti wa juu na kasi. Ufungaji wake mwembamba wa pini 8 DIP hufanya iweze kutumika katika mpangilio wa PCB wenye msongamano mkubwa. Matumizi yanayolengwa ni pamoja na otomatiki ya viwanda, vifaa vya mawasiliano, vifaa vya ziada vya kompyuta na mashine za kugundua kwa kasi, ambapo kunahitajiwa kubadilisha ishara au mzigo wa nguvu ya chini kwa uaminifu, haraka na kwa kutengwa.

2. In-depth Technical Parameter Analysis

Utendaji wa EL840A na EL860A umefafanuliwa na seti kamili ya vigezo vya umeme, vya mwanga na vya joto. Kuelewa vipimo hivi ni muhimu kwa muundo sahihi wa sakiti na uendeshaji wa kuaminika.

2.1 Absolute Maximum Ratings

Viwango hivi vinafafanua mipaka ya mkazo ambayo inaweza kusababisha uharibifu wa kudumu wa kifaa. Hakuna uhakikisho wa uendeshaji chini ya hali hizi.

• Ingizo (upande wa LED):Mfuatano mkubwa wa mkondo wa mbele (I_F) ni 50 mA. Voltage ya nyuma (V_R) hadi 5V inaweza kutumika. Chini ya hali ya msukumo (100Hz, 0.1% ya wakati wa kazi), mkondo wa kilele wa mbele (I_FP). Input power (P_in) haipaswi kuzidi 75 mW.
• Pato (upande wa MOSFET):Tofauti kuu kati ya EL840A na EL860A iko katika viwango vya voltage ya pato na sasa. Voltage ya kuvunja (V_L) ya EL840A ni 400V, na sasa ya mzigo endelevu (I_L) The rating is 120 mA. The EL860A has a higher rated breakdown voltage of 600V, but a lower continuous current of 50 mA. Designers must select the model based on their specific voltage and current requirements. For a pulsed load current (I_LPeak), the EL840A is 300 mA, and the EL860A is 150 mA. The output power dissipation (P_out) imewekwa kikomo hadi 800 mW.
• Utofautishaji na Tabia za Joto:Voltage ya utofautishaji kati ya pembejeo na pato (V_iso) is 5000 Vrms (test for 1 minute). The device can operate within an ambient temperature range of -40°C to +85°C and can be stored at temperatures from -40°C to +125°C. During the reflow soldering process, the soldering temperature must not exceed 260°C for more than 10 seconds.

2.2 Electro-Optical Characteristics

Vigezo hivi kawaida huainishwa kwa joto la 25°C, na hufafanua tabia ya uendeshaji wa SSR.

• Tabia za Ingizo:Voltage ya mbele ya LED ya ingizo (V_F) The typical value is 1.18V at a drive current of 10mA, with a maximum of 1.5V. Reverse leakage current (I_R) is a maximum of 1 µA at a reverse bias of 5V.
• Output characteristics:Off-state leakage current (I_uvujio) ni ndogo sana, na thamani ya juu ni 1 µA wakati LED ya pembejeo imezimwa na pato liko kwenye voltage yake ya juu ya kiwango. Upinzani wa kuwasha (R_d(ON)) is a key parameter affecting voltage drop and power loss. When driven with a 10mA input current at maximum load, the typical R_d(ON)is 20Ω (max 30Ω) for the EL840A, while the typical value for the EL860A is 40Ω (max 70Ω).
• Transfer Characteristics:This defines the relationship between input and output. The LED conduction current (I_F(on)) For both models, the maximum is 5mA (typical 3mA). LED off current (I_F(off)The minimum is 0.4mA; a value below this ensures the output is off. This defines the hysteresis of the input current.
• Switching speed:Turn-on time (T_on) is the delay from applying the input current until the output reaches 90% of its on-state value. For the EL840A, the typical value is 0.4ms (max 3ms); for the EL860A, the typical value is 1.4ms (max 3ms). Turn-off time (T_off) is typically 0.05ms (max 0.5ms) for both models. This is relatively fast for an SSR and suitable for many signal switching applications.
• Isolation parameters:Isolation resistance (R_I-OMinimum 5 x 10 at 500V DC¹⁰Ω. Isolation capacitance (C_I-O) maximum 1.5 pF, which is important for high-frequency noise coupling considerations.

3. Uchambuzi wa Mkunjo wa Utendaji

Ingawa mwongozo wa data unarejelea data maalum ya michoro (mikunjo ya kawaida ya sifa za optoelektroniki, michoro ya wakati wa kuwasha/kuzima), data ya maandishi huruhusu uchambuzi wa mwelekeo muhimu. Uhusiano kati ya mkondo wa mbele wa LED na voltage ya mbele utafuata mkunjo wa kawaida wa kielelezo cha diode. Upinzani wa kuwasha umebainishwa chini ya hali maalum; ina mgawo chanya wa joto, ambayo inamaanisha kuwa huongezeka kadri joto la kiungo cha MOSFET la pato linapoinuka. Wakati wa kubadili unahusiana na mzigo; wakati uliobainishwa unatumika kwa mzigo wa upinzani (R_L= 200Ω). Mizigo ya uwezo au ya kihisia inaweza kuathiri nyakati hizi, na inaweza kuhitaji mtandao wa kufyonza kwa ulinzi na uthabiti wa ratiba.

4. Taarifa za Mitambo na Ufungaji

4.1 Pin Configuration and Schematic

The device employs a standard 8-pin DIP pin arrangement. Pins 1 and 3 are the anodes for the two independent input LEDs. Pins 2 and 4 are the corresponding cathodes. The output side consists of two independent MOSFET switches. For each channel, the drain and source terminals are connected to pins 5, 6, 7, and 8 according to the internal schematic, allowing flexible connection as an SPST switch.

4.2 Package Dimensions and Options

This product is offered in two main package styles: one with through-hole pinsStandard DIP type, pamoja naChaguo la Aina ya S1(Umbo la pini ya kusakinishwa kwenye uso, nyembamba). Zote mbili zinatoa mchoro wa kina wa vipimo, ukijumuisha urefu wa mwili, upana, urefu, nafasi ya pini (kiwango cha DIP ni 2.54mm) na vipimo vya pini. Kwa chaguo la SMD, pia hutolea mpangilio ulipendekezwa wa pedi ya kuuza ili kuhakikisha muundo thabiti na nguvu ya mitambo.

4.3 Polarity and Device Marking

The device is marked on the top side. The marking format is: "EL" (manufacturer identifier), followed by the part number (e.g., 860A), a one-digit year code (Y), a two-digit week code (WW), and an optional "V" indicating the VDE certification version. Correct identification of pin 1 (typically marked by a dot or notch on the package body) is crucial for proper orientation.

5. Mwongozo wa Uchomeleaji na Usanikishaji

5.1 Mkunjo wa Joto wa Reflow Soldering

For surface mount assembly, a specific reflow soldering temperature profile must be followed to prevent damage. This profile complies with the IPC/JEDEC J-STD-020D standard. Key parameters include: a preheat stage from 150°C to 200°C within 60-120 seconds, a maximum ramp-up rate of 3°C per second, a time above liquidus (217°C) of 60-100 seconds, and a peak package body temperature of 260°C for a maximum of 30 seconds. These conditions ensure the formation of good solder joints without subjecting the internal semiconductor junctions to excessive thermal stress.

5.2 Usage Precautions

Inasisitiza mambo kadhaa muhimu ya kuzingatia katika usanifu. Usizidishe viwango kamili vya juu zaidi vya voltage, sasa na nguvu. MOSFET ya pato yenyewe haina ulinzi dhidi ya mabadiliko ya ghafla ya voltage au msukumo wa inductive; katika mazingira magumu ya umeme, vifaa vya ziada vya ulinzi kama vile snubbers au TVS diodes vinaweza kuhitajika. Uwezo mdogo wa joto wa kifurushi kunamaanisha lazima uangaliwe matumizi ya nguvu na eneo la kutosha la shaba kwenye PCB kwa ajili ya upoaji joto, hasa wakati wa kufanya kazi karibu na mzigo wa juu zaidi wa sasa au kwenye hali ya joto ya juu ya mazingira.

6. Packaging and Ordering Information

6.1 Model Naming Rules

Nambari ya sehemu inafuata muundo ufuatao: EL8XXA(Y)(Z)-V.

• XX:Indicates part number, 40 (EL840A) or 60 (EL860A), which defines the voltage/current rating.
• Y:Lead form option. "S1" indicates surface mount lead form. Omission indicates standard through-hole DIP.
• Z:Chaguo za mkanda wa mkusanyiko wa kiotomatiki (TA, TB, TU, TD). Kuacha kunamaanisha ufungaji wa mabomba.
• V:Kiambishi, kinachoonyesha chaguo la uthibitisho wa usalama VDE.

6.2 Vipimo vya Ufungashaji

The standard DIP version is supplied in tubes of 45 units each. The surface-mount option (Type S1 with TA or TB tape) is supplied in reels of 1000 units each. Detailed tape dimensions are provided, including pocket size (A, B), pocket depth (D0, D1), feed hole pitch (P0), and tape width (W), which are critical for compatibility with automated placement equipment.

7. Maelezo ya Matumizi na Mazingatio ya Ubunifu

7.1 Typical Application Circuit

This SSR can be used in two main configurations: as two independent single-pole, single-throw (SPST) switches, or, by appropriately connecting the outputs, as a single Form A transfer switch or other configurations. The input LEDs are typically driven by digital logic gates or transistors, with the current-limiting resistor calculated based on the supply voltage and the desired LED current (e.g., 10-20 mA for full output activation). The outputs can switch DC or AC loads within their voltage and current ratings. For AC loads, the MOSFET body diode will conduct during one half-cycle, making the device inherently a bidirectional switch.

7.2 Design Considerations

• Thermal Management:The calculated power consumption is P_diss= I_L²* R_d(ON). Ensure it does not exceed the total power consumption (P_T= 850mW maximum). Use sufficient PCB copper area as a heat sink.
• Load compatibility:This SSR is ideal for resistive loads. For capacitive loads, the inrush current may exceed I_LPeak. For inductive loads, use a snubber network (an RC across the load or a transient voltage suppressor) to clamp the voltage spike generated during turn-off.
• Input-driven:Ensure the input current exceeds I_F(on)to achieve reliable turn-on, and remains below I_F(off)to achieve reliable turn-off. Avoid using slow input signal edges near the threshold current.
• Utoaji wa Kujitenga:Kuweka umbali wa kutambaa na pengo la umeme linalofaa kati ya saketi za ingizo na pato kwenye PCB ili kudumisha kiwango cha juu cha kujitenga.

8. Technology Comparison and Selection Guide

Tofauti kuu katika mfululizo huu iko katika usawazishaji kati ya uwezo wa voltage na sasa.EL840AImeboreshwa kwa matumizi yanayohitaji sasa endelevu ya juu (hadi 120mA) lakini voltage ya chini (400V). Ina upinzani wa chini wa kuwasha, na hivyo kusababisha kushuka kwa voltage ndogo na upotezaji wa nguvu mdogo.EL860AIliyoundaliwa kwa matumizi yanayohitaji voltage ya kuzuia ya juu zaidi (600V) lakini mkondo endelevu wa chini (50mA). Upinzani wake wa kuwasha ni mkubwa zaidi. Uchaguzi unapaswa kutegemea voltage ya kilele na mkondo thabiti wa mzigo. Kwa mizigo yenye mkondo wa mshtuko mkubwa (kama balbu au capacitor), ukadiriaji wa juu wa mkondo wa mshtuko wa EL840A (300mA dhidi ya 150mA) pia unaweza kuwa kipengele cha uamuzi.

9. Maswali Yanayoulizwa Mara kwa Mara (Kulingana na Vigezo vya Kiufundi)

9.1 Je, SSR hii inaweza kubadili mzigo wa AC?

Yes. The output MOSFET structure and its inherent body diode allow bidirectional current flow. Therefore, it can switch AC voltages within its breakdown voltage (V_L) rating. The current rating applies to the peak value for both DC and AC.

9.2 What is the function of the photovoltaic diode array in the output detector?

Photovoltaic array inakotoa voltage wakati inapowashwa na LED ya infrared upande wa pembejeo. Voltage hii inatumika kuendesha lango la MOSFET ya pato, na kuifanya iweze kufanya kazi. Njia hii inatoa utengano kamili wa umeme kwa sababu hakuna uhusiano wa umeme unaohitajika kwa kusawazisha lango la MOSFET.

9.3 How to interface with a 5V microcontroller?

Tumia resistor rahisi iliyounganishwa mfululizo. Kwa mfano, kwa pini ya GPIO ya microcontroller ya 5V, LED V_FTakriban 1.2V, I inayotarajiwa_Fni 10mA, basi thamani ya upinzani R = (5V - 1.2V) / 0.01A = 380Ω. Upinzani wa kawaida wa 390Ω unafaa. Hakikisha udhibiti mdogo unaweza kutoa mkondo unaohitajika.

9.4 Why is the turn-on time of EL860A longer than that of EL840A?

Wakati wa kuwasha wa kawaida mrefu zaidi (1.4ms vs. 0.4ms) unaweza kuhusiana na muundo wa ndani wa MOSFET ya voltage ya juu katika EL860A, ambayo inaweza kuwa na capacitance tofauti ya lango, au sifa za mzunguko wa kuendesha kwa nishati ya jua zimeboreshwa kwa mchakato wa 600V.

10. Kanuni za Uendeshaji

Kifaa hiki kinategemea kanuni za kutengwa kwa mwanga na kuendeshwa kwa photovoltaic. Wakati mkondo wa mbele unatumika kwa LED ya infrared ya AlGaAs ya pembejeo, hutoa mwanga. Mwanga huu hupita kwenye pengo la kutengwa na kufikia safu ya diode ya photovoltaic upande wa pato. Safu hiyo hubadilisha nishati ya mwanga kuwa umeme, ikizalisha voltage inayotosha kuwasha lango la MOSFET ya N-channel. Hii inaunda njia ya upinzani mdogo kati ya terminali za mtiririko na chanzo, ikifunga "mawasiliano" ya relay. Wakati mkondo wa pembejeo unapoondolewa, utoaji wa mwanga unaacha, voltage ya photovoltaic hupungua, lango la MOSFET linatoka, kifaa hukatwa, na mzunguko unakatika. Mchakato mzima hauhusishi mguso wa kimwili au kuunganishwa kwa sumaku, na kuhakikisha maisha marefu na uwezo wa juu wa kukabiliana na kelele.

11. Uchambuzi wa Kesi Halisi za Ubunifu

Mazingira:Kutenganisha ishara ya sensorer ya 24V DC, 80mA na pembejeo ya analog ya mfumo wa ukusanyaji data.

Implementation Plan:EL840A was selected for its 120mA current rating (providing margin) and 400V voltage rating (far exceeding 24V). The sensor output drives the SSR input via a 330Ω resistor from the 5V supply rail, supplying approximately 11mA to the LED, well above the maximum I_F(on). The SSR output is connected between the 24V sensor signal and the data acquisition input. A 10kΩ pull-down resistor is placed at the acquisition input to define a logic low when the SSR is off. The low leakage current (max 1µA) ensures minimal error voltage across the pull-down resistor when the SSR is off. Fast switching speed (typically 0.4ms) allows for rapid sampling when needed. The 5000Vrms isolation protects the sensitive acquisition circuitry from ground loops or transients in the sensor environment.

12. Mwelekeo wa Teknolojia na Mazingira

Reli ya Imara inawakilisha teknolojia iliyokomaa lakini inayoendelea kukua. Mwenendo mkuu ni ujumuishaji wa juu zaidi, ufungaji mdogo zaidi na viashiria bora vya utendaji. Ingawa kifaa hiki hutumia kiongozi cha MOSFET ya fotovoltiki, pia kuna teknolojia nyingine, kwa mfano kutumia kiongozi cha triac ya optocoupler kwa kubadili AC, au muundo wa kisasa zaidi unaotumia IC wenye vipengele vya ulinzi vilivyojumuishwa (kupita mkondo, kupita joto). Mabadiliko ya kutumia ufungaji wa kushikilia uso (kama chaguo la S1) yanalingana na mwenendo wa sekta nzima ya usanikishaji otomatiki na kupunguza nafasi ya bodi. Voltage ya juu ya kutengwa na uthibitisho mwingi wa usalama wa kimataifa (UL, VDE, n.k.) huonyesha umuhimu unaoongezeka wa usalama na uaminifu wa mfumo katika soko la kimataifa, hasa katika vifaa vya viwanda na vya matibabu. Maendeleo ya baadaye yanaweza kulenga kupunguza zaidi upinzani wa kuwasha, kuboresha kasi ya kubadili kwa matumizi ya masafa ya juu, na kujumuisha udhibiti na ufuatiliaji mzuri zaidi ndani ya ufungaji mmoja wa kutengwa.