LTE-3371T Infrared Emitter Datasheet - High Power 940nm - Forward Voltage 1.6V - 150mW - Transparent Package - Technical Documentation

1. Muhtasari wa Bidhaa

The LTE-3371T is a high-performance infrared emitter, specifically designed for applications requiring robust optical output and stable operation under demanding electrical conditions. Its core design philosophy is to deliver high radiant power while maintaining a low forward voltage, enabling efficient operation in both continuous and pulsed drive schemes. The device emits at a peak wavelength of 940 nm, which falls within the spectrum invisible to the human eye. This makes it ideally suited for applications such as night vision systems, remote controls, and optical sensors where detection by the human eye is undesirable.

Transmitter hii inatumia ufungashaji wa uwazi, unaoongeza ufanisi wa uchimbaji wa mwanga na kutoa mtazamo mpana, ukihakikisha muundo wa mionzi usio na mabadiliko. Bidhaa hii inafaa hasa kwa matumizi ya viwanda, magari na elektroniki za watumiaji, ambapo matumizi yanahitaji utendakazi thabiti katika anuwai pana ya halijoto na mabadiliko ya mkondo.

2. In-depth Technical Parameter Analysis

Sehemu hii inatoa maelezo ya kina na ya uwazi kuhusu vigezo muhimu vya umeme na mwanga vilivyofafanuliwa kwenye hati ya maelezo, na kuelezea umuhimu wake kwa wahandisi wa muundo.

2.1 Absolute Maximum Ratings

Viwango hivi vinafafanua mipaka ya mkazo ambayo inaweza kusababisha uharibifu wa kudumu wa kifaa, na haifai kwa hali za kawaida za uendeshaji.

• Matumizi ya Nguvu (150 mW):Hii ni kwenye joto la mazingira (T_A) ya 25°C, kifaa kinaweza kutawanya nguvu ya juu zaidi kwa namna ya joto. Kuzidi kikomo hiki kuna hatari ya kuharibika kwa makutano ya semiconductor kutokana na joto la kupita kiasi, na kusababisha kuzeeka kwa kasi au kushindwa kwa ghafla. Wabunifu lazima wahakikishe usimamizi wa joto wa PCB na mazingira yanayozunguka unaweza kudumisha joto la makutano ndani ya safu salama, hasa wakati wa kufanya kazi chini ya mkondo wa kuendelea wa juu.
• Kilele cha mkondo wa mbele (2 A @ 300pps, msukumo wa 10μs):Kifaa hiki kinaweza kustahimili mkondo wa papo hapo wa juu sana, lakini tu chini ya hali maalum za msukumo (msukumo 300 kwa sekunde, upana wa msukumo 10 microseconds). Ukadiriaji huu ni muhimu sana kwa matumizi kama vile mawasiliano ya infrared, ambayo hupitisha data kwa namna ya misukumo mifupi yenye nguvu ya juu. Mkondo wa wastani wakati wa uendeshaji wa msukumo bado unahitaji kudhibitiwa ndani ya mipaka ya mkondo unaoendelea na nguvu inayotumiwa.
• Mkondo wa mbele unaoendelea (100 mA):Mkondo wa juu zaidi wa DC ambao unaweza kupita kwenye kifaa kwa muda usio na kikomo chini ya hali maalum. Kufanya kazi karibu na kikomo hiki kunahitaji hatua bora za upoaji joto.
• Voltage ya nyuma (5 V):Voltage ya juu zaidi ambayo inaweza kutumika kwa mwelekeo wa upendeleo wa nyuma. Kuzidi thamani hii kunaweza kusababisha kuvunjika na kushindwa mara moja. Ulinzi wa sakiti kama vile upinzani wa mfululizo au diodi ya ulinzi sambamba kawaida huhitajika.
• Safu ya joto ya uendeshaji na uhifadhi:This device is rated for industrial-grade temperature range (Operating: -40°C to +85°C, Storage: -55°C to +100°C), indicating its suitability for harsh environments.
• Pin Soldering Temperature (260°C for 5 seconds):Provides guidance for wave soldering or hand soldering, specifying the maximum temperature and duration that pins can withstand at 1.6mm from the package body.

2.2 Electrical and Optical Characteristics

These parameters are measured under standard test conditions (T_A=25°C) and define the device's performance.

• Aperture Irradiance (E_e) and Radiant Intensity (I_E):Hii ndio parameta kuu ya pato la mwanga. E_eHupima msongamano wa nguvu (mW/cm²), wakati I_Ehupima nguvu inayotolewa kwa kila kitengo cha pembe tatu (mW/sr). Zote hujaribiwa chini ya mkondo wa mbele (I_F) wa 20mA. Thamani hupangwa katika viwango (tazama Sehemu ya 3), anuwai ya kawaida ni kutoka 0.64-1.20 mW/cm² (Kiwango B) hadi 4.0 mW/cm² (Kiwango G). Viwango vya juu zaidi vinatoa nguvu ya mwanga yenye nguvu zaidi.
• Urefu wa wimbi la upeo wa utoaji (λ_Upeo):Thamani ya kawaida ni 940 nm. Urefu huu wa wimbi unaweza kugunduliwa kwa ufanisi na photodiode ya silikoni, na kimsingi hauonekani, na kwa hivyo unafaa kabisa kwa taa za siri.
• Upana wa nusu ya mstari wa wigo (Δλ):Takriban 50 nm. Hii inabainisha upana wa bendi ya wigo; upana mwembamba unaonyesha chanzo cha mwanga chenye rangi moja zaidi, ambacho kinaweza kuwa muhimu kwa kuchuja mwanga wa mazingira katika matumizi ya kihisi.
• Voltage ya mbele (V_F):Paramu muhimu wa ufanisi wa umeme. V ya kawaida_FNi 1.6V kwenye 50mA, na 2.1V kwenye 250mA. V ya chini kiasi kwenye mkondo wa juu_F(Kiwango cha chini 1.65V, kiwango cha juu 2.1V @ 250mA) ni sifa muhimu, inayopunguza upotezaji wa nguvu na joto kwenye LED yenyewe.
• Mkondo wa kinyume (I_R):) kwenye voltage ya kinyume (V_R) ya 5V, upeo wa 100 μA. Mkondo wa uvujaji mdai ni bora.
• Pembe ya mtazamo (2θ_1/2):) digrii 40 (kiwango cha chini). Hii ni pembe kamia wakati nguvu ya mionzi inapungua hadi nusu ya thamani yake ya juu (axial). Pembe pana ya 40° hutoa mwanga mpana na sare, unaofaa kwa matumizi kama vile sensor ya karibu au taa ya eneo.

3. Grading System Description

LTE-3371T inatumia mfumo mkali wa kugawanya kwa pato lake la mionzi, kuanzia daraja B hadi G. Mfumo huu unahakikisha uthabiti ndani ya kundi la uzalishaji, na unaruhusu wabunifu kuchagua vifaa vinavyokidhi mahitaji yao maalum ya nguvu ya mwanga.

• Mgawanyo wa nguvu ya mwanga:Kigezo kikuu cha mgawanyo ni nguvu ya mionzi (I_E) na mwangaza wa mionzi kwenye tundu (E_e). Kwa mfano, vifaa vya daraja D vina safu ya kawaida ya I_Eya 8.42-16.84 mW/sr, wakati vifaa vya daraja G vina ukadiriaji wa 30 mW/sr (kiwango cha chini). Daraja G halijabainishwa kikomo cha juu, ikionyesha kwamba inawakilisha vitengo vilivyo na utendaji wa juu zaidi katika uzalishaji.
• Athari za Ubunifu:Wakati wa kubuni mfumo, kubainisha msimbo wa daraja ni muhimu ili kupata utendaji unaotabirika. Kutumia vifaa vya daraja la chini kunaweza kuhitaji mkondo wa kuendesha wa juu zaidi kufikia pato la mwanga sawa na daraja la juu, na hivyo kuathiri ufanisi wa mfumo na ubunifu wa joto. Kwa matumizi yanayohusiana na gharama, daraja la chini linaweza kutosha, wakati mifumo ya utendaji wa juu inahitaji daraja E, F, au G.
• Uthabiti wa urefu wa wimbi:Mwongozo wa vipimo unabainisha urefu wa wimbi la kilele kimoja (940nm) bila kugawanywa katika viwango, ikionyesha udhibiti mkali wa mchakato wa ukuaji wa epitaxial, na hivyo kuwa na sifa za wigo zinazofanana katika viwango vyote.

4. Uchambuzi wa Mkunjo wa Utendaji

Michoro iliyotolewa inatoa ufahamu muhimu kuhusu tabia ya kifaa chini ya hali zisizo za kawaida.

4.1 Mchoro wa Usambazaji wa Wigo (Mchoro 1)

Mkunjo huu unathibitisha utoaji wa kilele kwenye 940nm pamoja na upana wa nusu wa wigo wa takriban 50nm. Umbo lake ni la kawaida kwa emitari ya infrared yenye msingi wa AlGaAs. Mkunjo unaonyesha utoaji mdogo sana katika anuwai ya wigo unaoonekana, ukithibitisha sifa yake ya kujificha.

4.2 Mchoro wa Uhusiano wa Mkondo wa Mbele na Joto la Mazingira (Mchoro 2)

Mkunjo huu wa kupunguza nguvu ni muhimu sana kwa usimamizi wa joto. Unaonyesha mkondo wa juu unaoruhusiwa unaoendelea kuelekea mbele unapungua kadri halijoto ya mazingira inavyopanda. Katika 85°C, mkondo wa juu unaoruhusiwa ni chini sana kuliko thamani ya kawaida ya 100mA kwenye 25°C. Wabunifu lazima watumie mchoro huu kubaini mkondo wa usalama wa kufanya kazi kwa matumizi yao katika halijoto mbaya zaidi ya mazingira.

4.3 Mchoro wa Uhusiano wa Mkondo wa Mbele na Voltage ya Mbele (Mchoro 3)

Huu ni mkunjo wa kawaida wa I-V unaoonyesha uhusiano wa kielelezo. Mkunjo huu unawaruhusu wabunifu kukadiria kushuka kwa voltage na matumizi ya nguvu (V_F* I_F) kwa mkondo wowote uliopewa wa kufanya kazi, jambo ambalo ni muhimu sana kwa kuchagua upinzani unaolingana wa kudhibiti mkondo au saketi ya kuendesha.

4.4 Grafu ya Uhusiano wa Ukubwa wa Mionzi wa Jamaa na Joto la Mazingira (Mchoro 4) na Mkondo wa Mbele (Mchoro 5)

Mchoro 4 unaonyesha pato la macho linapungua kadri halijoto inavyopanda (kwa mgawo hasi wa halijoto), ambayo ni sifa ya kawaida ya LED. Mchoro 5 unaonyesha pato linakua kwa kasi zaidi kuliko mstari kuhusiana na mkondo. Ingawa pato linaongezeka kadri mkondo unavyoongezeka, katika mikondo ya juu sana, ufanisi kwa kawaida hupungua kwa sababu ya ongezeko la joto. Mikunjo hii husaidia katika usawazishaji kati ya nguvu ya pato, ufanisi na maisha ya kifaa.

4.5 Mchoro wa Mwelekeo wa Mionzi (Mchoro 6)

This polar plot visually represents the viewing angle. The concentric circles represent relative intensity (from 0 to 1.0). The plot confirms a broad, approximately Lambertian (cosine) emission pattern, with intensity dropping to half its peak value at approximately ±20° from the central axis (total 40°).

5. Taarifa za Mitambo na Ufungaji

The device uses a standard through-hole package with a transparent resin lens. Key dimensional specifications in the datasheet include:

• All dimensions are in millimeters. Unless otherwise specified, the standard tolerance is ±0.25mm.
• A maximum resin bulge of 1.5mm under the flange is permitted, which must be considered for PCB spacing and cleaning.
• Pin pitch is measured where the pins extend from the package body, which is critical for PCB pad design.
• The package includes a flange, which aids in mechanical stability during soldering and provides a visual and physical reference for orientation.

Polarity Identification:The datasheet implies standard LED polarity (typically, the longer pin is the anode). However, designers should always refer to the specific package drawing to confirm the anode/cathode marking, usually indicated by a flat or notch on the package flange.

6. Mwongozo wa Uchomaji na Usanikishaji

Adherence to these guidelines is critical for reliability.

• Soldering:Absolute maximum ratings specify a pin soldering temperature of 260°C for a maximum of 5 seconds, measured at a point 1.6mm from the package body. This is compatible with standard wave soldering or hand soldering processes. For reflow soldering, a temperature profile with a peak temperature below 260°C and limited time above the liquidus should be used to prevent thermal damage to the plastic package or internal die bonds.
• Operation:Standard ESD (Electrostatic Discharge) precautions should be observed as semiconductor junctions can be damaged by static electricity.
• Cleaning:The transparent resin package may be sensitive to certain strong solvents. If post-solder cleaning is required, compatibility should be checked.
• Storage:Devices should be stored in a low-humidity, non-corrosive environment within the specified temperature range (-55°C to +100°C). For moisture-sensitive devices, they should be kept in a sealed bag with desiccant if not baked before use.

7. Mapendekezo ya Matumizi

7.1 Mandhari ya Kawaida ya Matumizi

• CCTV/Night Vision Infrared Illumination:These emitter arrays can be used to provide covert illumination for security cameras equipped with infrared-sensitive sensors.
• Proximity and Presence Detection:Paired with a photodetector, this emitter can be used for non-contact switching, object detection, and liquid level sensing.
• Optical Data Transmission:Due to its high pulse current capability, it is suitable for short-range, low-data-rate infrared communication links (e.g., remote controls, industrial telemetry).
• Industrial Automation:Inatumika katika vihesabu vya mwanga, kuhesabu vitu kwenye mstari wa uzalishaji, na vihisi vya mwanga vinavyokatizwa.

7.2 Mazingatio ya Ubunifu

• Uendeshaji wa Umeme:LED ni kifaa kinachoendeshwa na umeme. Daima tumia chanzo cha umeme cha kudumu au upinzani unaopunguza mkondo uliosanidiwa mfululizo na chanzo cha voltage. Fomula ya kuhesabu thamani ya upinzani ni R = (V_{Chanzo cha Umeme}- V_F) / I_F. Tumia V_FThamani, ili kuhakikisha kwamba sasa haizidi thamani inayotarajiwa chini ya hali zote.
• Usimamizi wa joto:对于高电流（例如，>50mA）下的连续工作，需考虑功耗（P_D= V_F* I_F). Hakikisha PCB ina eneo la shaba la kutosha (pedi za kupoza joto) ili kuhamisha joto kutoka kwenye pini. Rejea mkunjo wa kupunguza mzigo (Mchoro 2).
• Usanifu wa optiki:Pembe ya mtazamo pana inaweza kuhitaji lenzi au kioakisi ili kusawazisha mwanga kwa matumizi ya umbali mrefu. Kwa taa iliyotawanyika, pembe ya mtazamo pana ni muhimu.
• Ulinzi wa umeme:Fikiria kuunganisha upinzani mdogo wa thamani katika mfululizo na LED ili kuzuia mkondo wa mawimbi, na ikiwa mzunguko wa kuendesha unaweza kuzalisha voltage ya kinyume, unganisha diode ya ulinzi ya upendeleo wa kinyume sambamba na LED.

8. Ulinganishi wa Kiufundi na Tofauti

Kulingana na vipimo vyake, LTE-3371T inaonyesha tofauti katika maeneo yafuatayo muhimu:

• Uwezo wa Mkondo Mkuu:Kwa vifaa vya mtindo huu wa kufunga, ukadiriaji wa mkondo wa kilele cha 2A ni wa juu sana, unaoweza kufanya mwale mkali, wa muda mfupi, unaofaa sana kwa hisia au mawasiliano ya umbali mrefu.
• Voltage ya Mbele ya Chini:Kwa kutolea nje ya infrared ya nguvu ya juu, V ya kawaida kwa 50mA_Fya 1.6V ni ya chini kiasi. Ikilinganishwa na wale walio na V ya juu_F.
• Compared to devices, this directly translates to higher electrical efficiency and less heat waste at a given optical output.Wide Viewing Angle with Transparent Encapsulation:
• This combination provides uniform, efficient light output without the diffusing effect of tinted encapsulation, maximizing total luminous flux.Industrial-Grade Temperature Rating:

Masafa ya uendeshaji ya -40°C hadi +85°C hufanya iwe inafaa kwa matumizi ya magari na nje ambapo vipengele vya kiwango cha kibiashara vinaweza kushindwa.

9. Maswali Yanayoulizwa Mara kwa Mara (Kulingana na Vigezo vya Kiufundi)

9.1 Can I drive this LED directly with a 5V microcontroller pin?Hapana, haiwezi kuendeshwa moja kwa moja._FPini za GPIO za microcontroller kwa kawaida hutoa mkondo mdogo (mfano, 20-40mA), na haziwezi kutoa voltage ya ziada inayohitajika. Lazima utumie saketi ya kuendesha. Njia rahisi zaidi ni kutumia resistor mfululizo: Kwa usambazaji wa 5V na lengo la I_Fya 50mA, tumia V ya juu²1.6V, R = (5V - 1.6V) / 0.05A = 68Ω. Nguvu ya kiwango cha resistor inapaswa kuwa P = I²² * R = (0.05)² * 68 = 0.17W, kwa hivyo resistor ya 1/4W inatosha.

9.2 Kuna tofauti gani kati ya nguvu ya mionzi (mW/sr) na mwangaza wa mionzi wa aperture (mW/cm²)?

Mnururisho (I_E)) ni kipimo cha nguvu ya mwanga inayotolewa na chanzo katika mwelekeo maalum (kwa kawaida axial)kwa kila kitengo cha pembe tatu. Inaelezea "mkazo" wa boriti ya mwanga.Aperture irradiance (E_e)) is the power density (power per unit area) measured at a specific distance, typically on the effective area of a detector placed perpendicular to the beam. For a given LED, they are related, but I_Eis more fundamental for characterizing the light source itself, while E_eis more practical for calculating the signal on a specific detector.

9.3 Kwa nini pato la macho hupungua kadri joto linavyoongezeka (Mchoro 4)?

This is due to several semiconductor physics phenomena. Primarily, increased temperature raises the probability of non-radiative recombination events within the LED's active region. The energy of recombining electron-hole pairs is converted into lattice vibrations (heat) instead of generating photons (light). This reduces the device's internal quantum efficiency. Additionally, the peak emission wavelength may shift slightly with temperature.

10. Uchunguzi wa Kesi Halisi ya Ubunifu

Scenario:Design a short-range (1-meter) infrared proximity sensor for detecting the presence of objects.

• Transmitter Drive:Use LTE-3371T (D grade for good output). Drive it via a MOSFET switch from a 5V supply with 100mA, 1ms pulses, once every 100ms (1% duty cycle). Average current is 1mA, well within limits. A series resistor is needed, with a value of (5V - 2.1V_Max)/0.1A ≈ 30Ω.
• Detector:Use a silicon phototransistor or photodiode with a spectral response peak near 940nm. Place it a few centimeters away from the transmitter to avoid direct coupling.
• Optics:LTE-3371T's 40° wide viewing angle is ideal for creating a diffuse "light curtain" in front of the sensor. For such short-range, diffuse applications, no additional lens is required.
• Signal Processing:The detector's output will show a baseline level (ambient light), with a spike appearing when the emitted pulse is reflected from a nearby object. Synchronous detection circuitry (which looks for the signal only during the 1ms pulse) can significantly improve immunity to ambient light noise.

11. Kanuni ya Uendeshaji

The LTE-3371T is a semiconductor light-emitting diode. Its operating principle is based on electroluminescence in a direct bandgap semiconductor material (likely aluminum gallium arsenide). When a forward voltage is applied, electrons are injected from the n-type region and holes from the p-type region into the active region (the p-n junction). These carriers recombine, releasing energy. In direct bandgap materials like AlGaAs, this energy is released primarily as photons (light). The specific wavelength of 940nm is determined by the bandgap energy of the semiconductor material used in the active layer, which is engineered during the material's epitaxial growth. The transparent epoxy package serves to protect the semiconductor chip, provide mechanical support for the leads, and act as a lens to shape the emitted light output.

12. Mwelekeo wa Teknolojia

Infrared emitter technology is evolving alongside broader optoelectronic trends. Key areas of development include:

• Uzito wa Nguvu na Ufanisi wa Juu Zaidi:Uboreshaji endelevu wa ukuaji wa epitaxial na usanifu wa chip unalenga kutoa nguvu zaidi ya mwanga kutoka kwa ukubwa fulani wa chip, wakati huo huo kupunguza kiwango cha chini cha voltage ya mbele, kuongeza moja kwa moja ufanisi wa lumens kwa watt (au nguvu ya umeme hadi nguvu ya mwanga).
• Ufungaji wa Hali ya Juu:Mienendo ni pamoja na vifaa vya ufungaji vya kifaa cha kushikilia uso (mfano, muundo wa chip kwenye bodi) vilivyo na sifa bora za joto, vinavyoruhusu mkondo wa juu zaidi wa uendeshaji endelevu na uaminifu bora. Pia kuna maendeleo ya ufungaji yenye lenzi au kifaa cha kueneza kilichojumuishwa kwa ajili ya hali maalum za boriti ya mwanga.
• Wavelength Nyingi na VCSEL:Kwa matumizi ya hisia kama vile wakati wa kukimbia na lidar, lasers za kutoa mwanga kutoka kwenye cavity wima (VCSEL) zinaongezeka kwa kasi, zikitoa upana mdogo wa wigo, kasi ya haraka ya udhibiti na pembe ndogo ya kutawanyika ikilinganishwa na vitoa mwanga vya kawaida vya LED (kama vile LTE-3371T). Hata hivyo, kwa matumizi mengi, LED bado zina gharama nafuu na uaminifu wa juu.
• Ujumuishaji na Viongozi:Kuna mwelekeo wa kuelekea vijenzi vyenye akili zaidi, ambapo baadhi ya vitoa mwanga vinajumuisha saketi rahisi za kuendesha au vipengele vya ulinzi (kama vile diode za ESD) ndani ya kifurushi.

LTE-3371T inalenga uwezo wa juu wa msukumo wa mkondo, chini ya V_Fna muundo thabiti, inawakilisha suluhisho lililokomaa na la kuaminika katika muundo huu wa maendeleo, hasa linatumika kwa matumizi yanayohitaji ufanisi wa gharama na taa ya juu ya infrared.