EL851 Series 4-Pin DIP High Voltage Phototransistor Optocoupler Datasheet - Package 6.35x4.57x3.3mm - VCEO 350V - CTR 50-600% - Technical Documentation

1. Product Overview

Mfululizo wa EL851 unawakilisha aina ya vifaa vya kuunganisha mwanga vya fototransistor zenye voltage ya juu zilizoundwa kwa ajili ya kutenganisha umeme thabiti katika matumizi magumu. Vifaa hivi vinaunganisha diode inayotoa infrared ambayo imeunganishwa na kichunguzi cha fototransistor cha silikoni kwa njia ya mwanga, na zimefungwa kwenye kifurushi kidogo cha pini 4 cha DIP. Kazi yao kuu ni kuhamisha ishara za umeme kati ya saketi mbili zilizotengwa kwa kutumia mwanga, na hivyo kuzuia voltage ya juu au kelele kusambaa kutoka upande wa pato hadi upande wa ushiritishaji, na kinyume chake. Mfululizo huu unajulikana kwa viwango vya juu vya voltage ya kolekta-emiteri, na kufanya iwe inafaa kwa kuingiliana na saketi za usambazaji wa nguvu na mifumo mingine ya voltage ya juu.

1.1 Core Advantages and Target Market

Mfululizo wa EL851 unatoa faida muhimu kadhaa zinazothibitisha nafasi yake katika soko. Kipengele chake kinachojitokeza zaidi ni viwango vya juu vyaV_CEO350V, ambayo inaufanya uweze kustahimili tofauti kubwa ya voltage kati ya upande wa ushiritishaji na upande wa pato. Hii inasaidiwa zaidi naV_ISO5000 V_rmsThe high isolation voltage (rms) ensures a reliable safety barrier in industrial and telecommunications equipment. These devices comply with major international safety standards including UL, cUL, VDE, and various other regional certifications (SEMKO, NEMKO, DEMKO, FIMKO, CQC), facilitating their entry into the global market. Furthermore, the series is designed to be halogen-free (for copper lead frame versions) and complies with RoHS and EU REACH regulations, meeting modern environmental and regulatory requirements. Target applications include telephone line interfaces, power circuit interfaces, solid-state relays (SSR) and DC motor controllers, as well as programmable controllers where signal isolation and noise immunity are critical.

2. In-depth Technical Parameter Analysis

A thorough understanding of the device's electrical and optical characteristics is crucial for proper circuit design and reliable operation.

2.1 Absolute Maximum Ratings

Absolute Maximum Ratings define the stress limits that may cause permanent damage to the device. These values are not intended for normal operating conditions. Key ratings for the EL851 include:

• Input Forward Current (I_F)): 60 mA (continuous).
• Peak forward current (I_FM)): 1 A (for a 1µs pulse), suitable for brief surge conditions.
• Collector-emitter voltage (V_CEO)): 350 V, this is the maximum voltage that can be applied across the output transistor with the base open.
• Collector current (I_C)): 50 mA.
• Total power dissipation (P_TOT)): 200 mW, combining input and output power limitations.
• Isolation voltage (V_ISO)): 5000 V_rms(for 1 minute at 40-60% relative humidity). This test is conducted with pins 1 and 2 shorted, and pins 3 and 4 shorted.
• Operating temperature (T_OPR)): -55°C to +100°C.
• Soldering temperature (T_SOL)): 260°C kwa sekunde 10, inafaa kwa mchakato wa kuunganishwa kwa mawimbi au kwa kuyeyusha tena.

2.2 Electro-Optical Characteristics

Vigezo hivi kwa kawaida huainishwa kwa 25°C, vinataja utendaji wa kifaa chini ya hali za kawaida za uendeshaji.

2.2.1 Sifa za Ingizo (Upande wa LED)

• Voltage ya mbele (V_F)): Thamani ya kawaida 1.2V, kiwango cha juu cha 1.4V wakati I_F= 10 mA. Hii hutumiwa kuhesabu upinzani wa kudhibiti mkondo unaohitajika upande wa ingizo.
• Mkondo wa nyuma (I_R)): Wakati V_RMaximum 10 µA at = 5V, indicating very low leakage current when the LED is reverse biased.
• Input capacitance (C_in)): Typical 30 pF, maximum 250 pF. This may affect high-frequency switching performance on the input side.

2.2.2 Sifa za Pato (Upande wa Phototransistor)

• Collector-emitter dark current (I_CEO)): Wakati V_CEMaximum 100 nA at = 200V. This is the leakage current when the LED is off (no light), crucial for determining "off-state" signal integrity.
• Collector-emitter breakdown voltage (BV_CEO)): At I_C= 0.1mA, the minimum is 350V, confirming its high-voltage capability.
• Collector-emitter capacitance (C_CE)): Wakati V_CE= 0V, typical value is 10 pF.

2.2.3 Sifa za Usafirishaji

• Current Transfer Ratio (CTR)): At I_F= 5mA and V_CE= 5V, the range is from 50% to 600%. CTR is defined as (I_C/ I_F) * 100%. Higher CTR allows the use of lower input current to drive a given output current, thereby improving efficiency. A wide range indicates the existence of a binning system; designers must consider the minimum CTR in the circuit to ensure proper functionality.
• Collector-Emitter Saturation Voltage (V_CE(sat))): At I_F= 20mA and I_C= 1mA, maximum 0.4V. This low saturation voltage is very important when the phototransistor is used as a switch in the "on" state, minimizing voltage drop and power loss.
• Isolation Resistance (R_IO)): Wakati V¹¹= 500V DC, minimum 10_IOΩ, indicating excellent DC isolation between input and output.
• Input-output capacitance (C_IO)): Typical value 0.6 pF, very low, helps minimize capacitive coupling of high-frequency noise through the isolation barrier.
• Rise time (t_r) and fall time (t_f)): Typical values are 4 µs and 5 µs respectively, with a maximum of 18 µs each under test conditions (V_CE=2V, I_C=2mA, R_L=100Ω). These parameters define the switching speed of the optocoupler, which is crucial for digital signal transmission or PWM applications.

3. Uchambuzi wa Mkunjo wa Utendaji

Ingawa data halisi ya picha inarejelewa kwenye PDF (mstari wa kawaida wa sifa za kielektroniki, Mchoro 9), maelezo muhimu yanatokana na data ya jedwali na mzunguko wa majaribio uliotolewa.

Mzunguko wa kupima wakati wa kubadili unaonyesha usanidi wa kawaida, ambapo mkondo wa msukumo huendesha LED ya pembejeo, na majibu ya transistor ya kielektroniki ya pato hupimwa kwenye upinzani wa mzigo (R_L). Wakati wa kupanda (t_r) ni wakati unaohitajika kwa mkondo wa pato kupanda kutoka 10% hadi 90% ya thamani yake ya mwisho wakati LED inawashwa. Wakati wa kushuka (t_f) ni wakati unaohitajika kushuka kutoka 90% hadi 10% wakati LED inazimwa. Thamani za kawaida katika safu ya 4-5 µs zinaonyesha kifaa hiki kinafaa kwa matumizi ya kubadili ya kasi ya kati, kama vile kuendesha relay au kutengwa kwa mstari wa data wa masafa ya chini, lakini huenda kisifaa kwa mawasiliano ya dijiti ya kasi sana.

4. Taarifa za Mitambo na Ufungaji

4.1 Vipimo na Chaguo za Ufungaji

EL851 inatoa chaguo kuu tatu za aina ya pini, kila moja ikiwa na vipimo na matumizi maalum.

• Standard DIP Type: The default through-hole package.
• M Type Option: Features wide pin bends with a pin pitch of 0.4 inches (approximately 10.16mm), suitable for circuit boards requiring wider pin spacing.
• S1 Type Option: A low-profile surface-mount (SMD) pin form. This is the SMD variant of the device.

Although the PDF drawing provides precise numerical dimensions, the overall package size of the standard DIP type is approximately 6.35mm in length, 4.57mm in width, and 3.3mm in height, making it a compact component.

4.2 Utambuzi na Alama za Upeo

Usanidi wa Pini ni wa Kawaida:

1. Anodi (Ingizo la Upande Mzuri wa LED)
2. Kathodi (Ingizo la Upande Hasi wa LED)
3. Emeta (Emeta ya Fototransista, kawaida huunganishwa kwenye ardhi/ya pamoja ya upande wa pato)
4. Kolekta (Kolekta ya Fototransista, ncha ya pato)

Sehemu ya juu ya kifaa imewekwa alama "EL" (inayowakilisha mtengenezaji), "851" (nambari ya kifaa), ikifuatiwa na nambari ya mwaka (Y), nambari mbili za wiki (WW), na chaguo la "V" inayowakilisha toleo lililothibitishwa na VDE. Kutambua kwa usahihi pini 1 (kwa kawaida huonyeshwa kwenye kifuniko kupitia nukta, mfuo, au ukingo uliopindika) ni muhimu kwa mwelekeo sahihi wakati wa kusanyiko.

4.3 Mpangilio wa Bodi ya Chuma Unapendekezwa

Kwa chaguo la S1 (usakinishaji wa uso), mpangilio wa padi unaopendekezwa umetolewa. Vipimo vinavyopendekezwa ni kwa madhumuni ya kumbukumbu tu, na wabunifu wanashauriwa kuzirekebisha kulingana na mchakato maalum wa utengenezaji wa PCB, utumiaji wa wino wa kuuza, na mahitaji ya usimamizi wa joto ili kuhakikisha mwunganisho wa kuuza unaoaminika.

5. Soldering and Assembly Guide

Kifaa hiki kinaweza kustahimili joto la kuuza hadi 260°C kwa muda wa sekunde 10. Hii inalingana na mkunjo wa kawaida wa wimbi la kuuza kwa vifurushi vya shimo la kupita na mkunjo wa kujirudia bila risasi kwa chaguo la SMD. Kuzingatia kikamilifu kikomo hiki cha muda na joto ni muhimu ili kuzuia uharibifu wa chipu ya ndani, waya wa kuunganisha, au nyenzo za kifurushi cha plastiki. Tahadhari za kawaida za ESD (utokaji umeme tuli) zinapaswa kuzingatiwa wakati wa usindikaji na usakinishaji. Anuwai ya joto la uhifadhi ni -55°C hadi +125°C.

6. Packaging and Ordering Information

6.1 Model Numbering Rule

Nambari ya Sehemu inafuata muundo ufuatao:EL851X(Z)-V.

• X: Chaguo la Umbo la Pini.
  • Hakuna: DIP-4 ya kawaida (100/kijiti).
  • M: Pini pana iliyopindika, nafasi ya 0.4" (100/kijiti).
  • S1: Umbo la Pini la Kufungika kwenye Uso (Umbo la Chini).
• Z: Chaguo la Ufungaji wa Mkanda wa Kuviringisha (Inatumika kwa S1 pekee).
  • TA, TB, TU, TD: Different reel specifications affecting packaging quantity (1000 or 1500 pieces per reel).
• V: Optional suffix indicating VDE safety certification.

6.2 Tape and Reel Specification

Provides detailed reel dimensions (A, B, D0, D1, E, F, P0, P1, P2, t, W, K) for the S1 option. These dimensions are crucial for PCB assembly machines to correctly pick and place components from the reel. The reel width (W) is 16.0mm ±0.3mm, and the pocket pitch (P0) is 4.0mm ±0.1mm.

7. Application Notes and Design Considerations

7.1 Typical Application Circuit

The EL851 is very well-suited for the following key applications:

• Kiolesura cha mstari wa simu: Kutenganisha saketi za mantiki nyeti za modem au mfumo wa simu kutoka kwa ishara za juu za voltage za kengele na mawimbi yanayoweza kutokea kwenye mstari wa simu.
• Mzunguko wa maoni wa usambazaji wa nguvu: Kutoa maoni ya kutenganisha ya voltage ya pato katika usambazaji wa nguvu wa kubadili (SMPS), kufikia udhibiti wa voltage huku ukidumisha usalama wa kutenganisha kati ya upande wa msingi (voltage ya juu) na upande wa sekondari (voltage ya chini).
• Udhibiti wa SSR na motor ya DC: Kuendesha gate au pembejeo ya relay imara, au kutumika kama kiolesura cha kutenganisha kati ya microcontroller na daraja la H la kuendesha motor, kulinda kudhibiti mantiki kutoka kwa kelele na mwinuko wa voltage unaosababishwa na motor.
• Moduli ya I/O ya Programmable Logic Controller (PLC)Isolate digital input/output channels to protect the central processing unit from field wiring faults, noise, and different ground potentials.

7.2 Key Design Factors

1. CTR DegradationThe CTR of an optocoupler degrades over time, especially when operating at high temperatures and high LED currents. For long-term reliability, the circuit should be designed to function using the specified minimum CTR after accounting for an appropriate degradation margin (typically 50% over the product's lifetime).Minimumspecified CTR.
2. Input Current LimitationAn external resistor must always be used in series with the input LED to limit the forward current (I_F) is limited to a safe value, typically well below the absolute maximum of 60mA. The resistor value is calculated as R_limit= (V_supply- V_F) / I_F.
3. Output load resistor: The value of the load resistor (R_L) connected to the phototransistor collector affects the output voltage swing and switching speed. A smaller R_LInaruhusu kasi ya juu zaidi, lakini hupunguza faida ya voltage ya pato. R_LHali ya majaribio ya =100Ω inatoa kumbukumbu ya wakati maalum wa kubadili.
4. Uwezo wa kukabiliana na kelele: Ingawa kifaa hiki kinatoa utengano bora wa umeme, capacitance ya chini sana ya pembejeo-pato (0.6 pF) husaidia kupunguza uunganisho wa kelele wa masafa ya juu. Kwa mazingira yenye kelele kali, bado inaweza kuhitajika kuongeza uchujaji wa ziada kwenye ishara za pembejeo na pato.
5. Upunguzaji wa joto: Hakikisha matumizi ya jumla ya nguvu (P_TOT= V_F*I_F+ V_CE*I_C) Not exceeding 200 mW, while considering the maximum operating ambient temperature. Derating may be required at temperatures above 25°C.

8. Technical Comparison and Differentiation

Compared to standard low-voltage optocouplers (typically V_CEOrating of 30-70V), the 350V rating of the EL851 is its primary differentiating feature. This allows it to be used directly in offline power supply feedback circuits (where the rectified mains voltage can be around 300V+) or industrial control interfaces without requiring additional voltage clamping or step-down circuits on the output side. Its wide CTR range provides options for both sensitive and standard drive requirements. It is offered in both through-hole (DIP, wide bend) and surface-mount (S1) tape and reel packaging, making it suitable for prototyping as well as high-volume automated assembly, with broad applicability.

9. Maswali Yanayoulizwa Mara kwa Mara (Kulingana na Vigezo vya Kiufundi)

Q: What minimum CTR should I design for?

A: Always design for the minimum CTR you expect at your operating I_Fand V_CEDesign your circuit based on a minimum CTR of 50% under CE conditions. Also consider potential degradation over the product's lifetime.

Q: Can I use this optocoupler to directly switch a 120VAC load?

A: No. V_CEOrating is 350V DC. The peak voltage of 120VAC is approximately 170V, which is within the rating. However, the optocoupler's phototransistor is not designed to directly handle the high current of an AC load. It should be used to drive the control input of a separate high-power switch (such as a TRIAC, MOSFET, or SSR).

Q: V_CEOand V_ISO?

What is the difference?_CEOJibu: V_ISO(350V) ndio voltage ya juu zaidi ya DC inayoweza kutumiwa kati ya kolekta na emita ya transistor ya pato._{(5000 V}rms

) ni voltage ya AC inayojaribiwa kati ya pini za ingizo zilizofungwa (1,2) na pini za pato zilizofungwa (3,4), inayoonyesha nguvu ya kutengwa kwa kizuizi cha ndani cha plastiki.

Swali: Je, unachagua vipi kati ya kifuniko cha DIP na SMD?

J: Tumia kifuniko cha DIP cha kupenyeza shimo kwa ajili ya utengenezaji wa mfano, usanikishaji wa mikono, au programu ambazo hazihitaji nafasi kubwa kwenye bodi ya mzunguko na zinazotaka nguvu ya mitambo ya kuunganishia pini kupitia shimo. Chagua kifuniko cha SMD (S1) kwa ajili ya usanikishaji wa kiotomatiki, muundo wa PCB wenye msongamano mkubwa, na mahitaji ya kupunguza unene wa bodi.

10. Mfano wa Usanifu Unaotumika

Mazingira: Ingizo la Tarakimu Iliyotengwa kwa Sensor za Viwanda vya 24V.Lengo:

Unganisha sensor ya karibu ya 24V kwa kontrolla ndogo ya 3.3V, ukitoa utengano ili kulinda MCU kutokana na mabadiliko ya gharama kwenye mstari wa 24V.

1. Usanifu wa Saketi:Upande wa Ingizo:_{Pato la Sensor (aina ya mkondo wa kumwagika) limeunganishwa kati ya +24V na anode ya EL851 (pini 1). Upinzani wa kudhibiti mkondo (R}in_{) is placed between the cathode (pin 2) and ground. When the sensor is active, select R}in_Fto set I_Fto a nominal 5-10 mA. For example, assuming V_{~1.2V, then R}in
2. = (24V - 1.2V) / 0.005A ≈ 4.56kΩ (use 4.7kΩ standard value).Output side:_{The phototransistor collector (pin 4) is connected through a pull-up resistor (R}kuvuta juu_{). Emita (pini 3) imeunganishwa na ardhi ya MCU. Wakati sensor imeamilishwa, LED inawaka, fototransistor inajaa, na kuvuta chini kolekta (ishara ya pato) (takriban 0.4V). Wakati sensor imezimwa, fototransistor inazimwa, R}kuvuta juu_{inavuta pato juu hadi 3.3V. Chagua R}kuvuta juu
3. kulingana na kasi na matumizi ya nguvu yanayohitajika; 1kΩ hadi 10kΩ ni thamani za kawaida.Kutengwa:_{Ardhi ya sensor ya 24V na ardhi ya MCU ya 3.3V zimetenganishwa kabisa. Kizuizi cha kutengewa cha 5000V cha EL851}rms

Mzunguko huu rahisi hutoa usambazaji thabiti wa ishara ya dijiti iliyotengwa.

11. Kanuni ya Uendeshaji_FEEL851 inafanya kazi kulingana na kanuni ya ubadilishaji wa mwanga na utengano. Mkondo unaotumika kwenye upande wa pembejeo unapita kupitia diode inayotoa mwanga wa infrared (LED), na kuiwezesha kutokeza mwanga. Mwanga huu unapita kwenye pengo la uwazi la utengano ndani ya kifurushi cha plastiki na kufika kwenye eneo la msingi la transistor ya fotoni ya silikoni upande wa pato. Mwanga unaoingia unazalisha jozi za elektroni na mashimo katika eneo la msingi, na kufanya kazi kama mkondo wa msingi. Mkondo huu wa msingi unaozalishwa na mwanga unazidishwa na faida ya mkondo wa transistor (h_C), na kuzalisha mkondo mkubwa wa kolekta (I

). Uwiano huu wa mkondo wa kolekta wa pato kwa mkondo wa pembejeo wa LED ndio uwiano wa uhamishaji wa mkondo (CTR). Hakuna muunganisho wa umeme kati ya mzunguko wa pembejeo na pato; ni mwanga tu unaowaunganisha, na hivyo kutoa utengano wa umeme.

12. Mwelekeo wa Teknolojia