Table of Contents
- 1. Product Overview
- 1.1 Core Advantages and Target Market
- 2. In-depth Technical Parameter Analysis
- 2.1 Absolute Maximum Ratings
- 2.2 Electrical and Optical Characteristics
- 3. Mfumo wa Uainishaji Maelezo
- 4. Uchambuzi wa Mkunjo wa Utendaji
- 4.1 Spectral Distribution (Figure 1)
- 4.2 Forward Current vs. Ambient Temperature (Figure 2)
- 4.3 Forward Current vs. Forward Voltage (Figure 3)
- 4.4 Relative Radiant Intensity vs. Ambient Temperature (Figure 4)
- 4.5 Relative Radiant Intensity vs. Forward Current (Figure 5)
- 4.6 Radiation Pattern (Figure 6)
- 5. Mechanical and Packaging Information
- 5.1 Outline Dimensions
- 5.2 Polarity Identification
- 6. Welding and Assembly Guide
- 7. Mapendekezo ya Matumizi na Mazingatio ya Ubunifu
- 7.1 Matumizi ya Kawaida: Kigunduzi cha Moshi
- 7.2 Mazingatio ya Jumla ya Ubunifu
- 8. Ulinganisho wa Kiufundi na Tofauti
- 9. Maswali Yanayoulizwa Mara kwa Mara (Kulingana na Vigezo vya Kiufundi)
- 10. Uchunguzi wa Kesi Halisi za Usanifu
- 11. Kanuni ya Uendeshaji
- 12. Mwelekeo wa Teknolojia
1. Product Overview
LTE-4208M is a high-performance infrared emitting diode, specifically designed for applications requiring reliable and efficient non-visible light emission. Its core function is to convert electrical energy into infrared radiation with a peak wavelength of 940 nanometers (nm). This wavelength is ideal for applications that need to minimize visible light interference, as it is essentially invisible to the human eye while being efficiently detected by silicon-based photodetectors such as phototransistors and photodiodes.
The device employs a standard T-1 3/4 (approximately 5mm diameter) package with a clear lens. This miniature plastic package offers a cost-effective solution while providing mechanical robustness. A key design feature is its spectral and mechanical compatibility with corresponding phototransistor series (e.g., LTR-3208), which simplifies optical system design by ensuring optimal alignment and signal coupling between the emitter and detector pair.
1.1 Core Advantages and Target Market
Faida kuu za LTE-4208M ni pamoja na pato lake la juu la nguvu ya mnururisho, utendakazi thabiti unaohakikishwa kupitia mchakato mkali wa kugawa daraja, na umbo lake dogo na la gharama nafuu. Huchambuliwa mapema kwa masafa maalum ya nguvu ya mnururisho (daraja), jambo ambalo huwaruhusu wabunifu kuchagua vipengele vinavyokidhi kwa usahihi mahitaji ya unyeti wa mfumo wao, bila ya kuhitaji urekebishaji wa nje au saketi za urekebishaji mwembamba. Utabiri huu huongeza mavuno ya utengenezaji na uaminifu wa mfumo.
Soko lenga la kipengele hiki hasa ni bidhaa za viwanda na matumizi ya kawaida zinazohitaji kugundua karibu, kugundua vitu, au usimbaji wa mwanga. Utumiaji wake unaojulikana zaidi ni kigunduzi moshi, ambacho hutumia kupimia mtawanyiko au kupungua kwa mwanga kugundua chembe za moshi. Matumizi mengine yanayowezekana ni pamoja na swichi zisizo na mguso, uhamishaji data wa umbali mfupi (mfumo wa udhibiti wa mbali, kwa mfano), sensorer za otomatiki ya viwanda, na vichanganuzi vya vitu.
2. In-depth Technical Parameter Analysis
Kuelewa vigezo vya umeme na vya mwanga ni muhimu kwa muundo wa mzunguko unaoaminika na kuhakikisha LED inafanya kazi ndani ya eneo lake salama la uendeshaji (SOA).
2.1 Absolute Maximum Ratings
Viwango hivi vinabainisha mipaka ya mkazo ambayo inaweza kusababisha uharibifu wa kudumu wa kifaa. Haipendekezwi kufanya kazi kwa muda mrefu chini ya hali zinazokaribia au kufikia mipaka hii.
- Power Dissipation (Pd):100 mW. This is the maximum power the device can dissipate as heat when the ambient temperature (TA) is 25°C. Exceeding this limit risks thermal runaway and failure.
- Peak Forward Current (IFP):3 A. This is the maximum instantaneous current allowed under pulse conditions (300 pulses per second, 10μs pulse width). It is significantly higher than the continuous current rating, highlighting the device's ability to handle short-duration, high-intensity pulses.
- Continuous Forward Current (IF):50 mA. This is the maximum DC current that can be continuously applied without exceeding the power dissipation rating, assuming a typical forward voltage.
- Reverse Voltage (VR):5 V. The device has very low tolerance to reverse bias. Applying a reverse voltage exceeding 5V may cause immediate breakdown. The datasheet clearly states that the device is not designed for reverse operation.
- Operating and Storage Temperature:are -40°C to +85°C and -55°C to +100°C, respectively. These ranges define the environmental conditions for reliable operation and non-operational storage.
- Joto la kuchomea pini:Umbali wa 4.0mm kutoka kwa mwili wa kifurushi, 260°C kwa sekunde 5. Hii ni muhimu kwa mchakato wa kuchomea wimbi au kuchomea tena, ili kuzuia kuharibu chipu ya ndani ya semiconductor au kifurushi cha plastiki.
2.2 Electrical and Optical Characteristics
These parameters are measured under standard test conditions (TA=25°C, IF=20mA, unless otherwise specified), defining the typical performance of the device.
- Radiant Intensity (IE):This is the core optical output parameter, expressed in milliwatts per steradian (mW/sr). It indicates the optical power emitted per unit solid angle. The device is binned (Grades A through G) based on its measured output at the standard test current of 20mA, with minimum and typical values ranging from 3.6/13.2 mW/sr (Grade A) to 28.8 mW/sr (Grade G). This binning allows for selection based on the required signal strength.
- Peak Emission Wavelength (λPeak):940 nm. This is the wavelength at which the emitted optical power reaches its maximum value. It falls within the near-infrared spectral range.
- Spectral line half-width (Δλ):50 nm. Kigezo hiki pia huitwa upana wa nusu ya urefu (FWHM), na kinaelezea upana wa wigo. Upana wa 50 nm unamaanisha kuwa mwanga unaotolewa unashughulikia safu ya urefu wa mawazi ya takriban 915 nm hadi 965 nm kwenye nusu ya kiwango cha kilele cha nguvu.
- Voltage ya mbele (VF):1.2V (kiwango cha chini), 1.6V (kawaida). Hii ni kushuka kwa voltage kwenye diode wakati mkondo wa 20 mA unapita. Ni muhimu sana kwa kuhesabu thamani ya upinzani wa mfululizo katika mzunguko wa kuendesha: R = (Vsupply- VF) / IF.
- Reverse current (IR):At VR=5V, maximum 100 μA. This is the small leakage current that flows when the diode is reverse-biased at its maximum rated value.
- Angle of View (2θ1/2):20 degrees. This is the full angle at which the radiation intensity drops to half of its maximum value (on-axis). A 20° angle of view indicates a relatively narrow, focused beam, which is advantageous for directional sensing applications.
3. Mfumo wa Uainishaji Maelezo
LTE-4208M inatumia kigezo kimoja muhimu cha kugawanya: nguvu ya mionzi. Vifaa hupimwa na kugawanywa katika vikundi (kutoka A hadi G) kulingana na pato lililopimwa chini ya mkondo wa kawaida wa majaribio ya 20mA. Mfumo huu unatoa faida kadhaa:
- Uthabiti wa Muundo:Wahandisi wanaweza kuchagua viwango maalum vya kikundi, ili kuhakikisha viwango vya ishara za mwanga vinavyolingana katika vikundi vyote vya uzalishaji, na hivyo kuboresha usawa wa bidhaa.
- Ulinganishi wa Utendaji:Unapotumia pamoja na vichunguzi vya mwanga vinavyolingana, kuchagua viwango vya kikundi vya kituo cha utoaji kunaweza kudhibiti kwa usahihi zaidi unyeti na anuwai ya mienendo ya mfumo mzima wa sensorer ya mwanga.
- Uboreshaji wa Gharama:Matumizi ambayo hayahitaji usikivu mkubwa yanaweza kutumia vifaa vya kiwango cha chini (k.m. daraja A, B), ambavyo vinaweza kuwa na gharama nafuu zaidi.
Mwongozo huu haujaonyesha kuwa aina hii inagawanywa kulingana na voltage ya mbele au urefu wa wimbi, ikionyesha udhibiti mkali wa utengenezaji wa vigezo hivi, au kwamba vigezo hivi sio sababu muhimu ya utofautishaji katika matumizi yake yaliyokusudiwa.
4. Uchambuzi wa Mkunjo wa Utendaji
Typical characteristic curves visually demonstrate the behavior of the device under various conditions, which is crucial for robust system design beyond the nominal 25°C point.
4.1 Spectral Distribution (Figure 1)
Curve hii inaonyesha usambazaji wa kigausi unaozingatia 940nm na upana wa nusu ya kilele wa takriban 50nm. Hii inathibitisha umonokromia wa pato la LED, ambalo ni muhimu kwa kuchuja usumbufu wa mwanga wa mazingira katika matumizi ya kuhisi. Umbo la curve hili ni la kawaida kwa LED ya infrared yenye msingi wa AlGaAs.
4.2 Forward Current vs. Ambient Temperature (Figure 2)
Curve hii ya kupunguza mzigo ni muhimu sana kwa usimamizi wa joto. Inaonyesha upeo wa mnyororo wa mbele unaoruhusiwa unaoendelea kupungua kadiri joto la mazingira linavyoongezeka. Katika 85°C (joto la juu la uendeshaji), mnyororo unaoruhusiwa ni chini sana kuliko thamani ya kiwango cha 50mA kwenye 25°C. Wabunifu lazima watumie chati hii kuhakikisha kuwa mnyororo wa uendeshaji hauzidi thamani ya curve kwenye joto la juu la mazingira linalotarajiwa la mfumo.
4.3 Forward Current vs. Forward Voltage (Figure 3)
Hii ni mkunjo wa kawaida wa I-V wa diode. Unaonyesha uhusiano wa kielelezo kati ya mkondo na voltage. Mkunjo huu unawaruhusu wasanidi kukadiria V chini ya hali ya majaribio isiyo ya 20mA.F, ambayo ni muhimu kwa usanifu wa umeme na mahesabu ya ufanisi.
4.4 Relative Radiant Intensity vs. Ambient Temperature (Figure 4)
This graph illustrates the temperature dependence of the optical output. The relative radiant intensity decreases as the temperature increases. For example, at 85°C, the output may be only 60-70% of its value at 25°C. This negative temperature coefficient must be considered when designing systems intended to operate over a wide temperature range to avoid signal loss at high temperatures.
4.5 Relative Radiant Intensity vs. Forward Current (Figure 5)
The curve indicates that within the typical operating range (e.g., up to 50mA), the optical output is approximately proportional to the forward current. However, this relationship is not perfectly linear; at very high currents, the efficiency (radiant intensity per mA) may slightly decrease due to increased thermal effects and other non-idealities within the semiconductor.
4.6 Radiation Pattern (Figure 6)
Mchoro huu wa polar unaonyesha wazi upeo wa kuona. Ukubwa wa kawaida umepangwa dhidi ya pembe ya mhimili wa katikati (0°). Mchoro huu unathibitisha nusu-pembe ya 20°, ukionyesha kupungua kwa kasi kwa ukubwa baada ya kupotoka kwa takriban ±10° kutoka katikati. Muundo huu ni wa kipekee kwa LED lenye lenzi rahisi ya kuba, likitoa mwanga uliolengwa unaofaa kwa matumizi ya mwelekeo maalum.
5. Mechanical and Packaging Information
5.1 Outline Dimensions
Kifaa hiki kinakidhi vipimo vya kawaida vya ufungaji wa T-1 3/4 wenye shimo la kupita. Vipimo muhimu vinajumuisha kipenyo cha mwili cha takriban 5mm, umbali wa kawaida wa pini mahali pini zinapotoka kwenye ufungaji ni 2.54mm (0.1"), na urefu wa jumla. Kumbuka mwinuko wa juu wa hariri chini ya flange ni 1.0mm. Pini kwa kawaida hutengenezwa kwa aloi ya shaba iliyopakwa bati. Ufungaji hutumia lenzi ya epoksi wazi, isiyo na rangi.
5.2 Polarity Identification
Kwa vifurushi vya kupenya kama T-1 3/4, upande wa polariti kawaida huonyeshwa kwa urefu wa pini (pini ndefu kawaida ni anode au chanya) na/au alama ya gorofa kwenye flange ya plastiki karibu na pini ya cathode (hasi). Tafadhali angalia michoro ya vipimo kwa alama maalum zinazotumiwa na kipengele hiki.
6. Welding and Assembly Guide
Kufuata viwango vya kuunganisha ni muhimu ili kuzuia mshtuko wa joto na uwezekano wa kushindwa.
- Kuchomea kwa mkono:Tumia chuma cha kuchomea chenye udhibiti wa joto. Kipindi cha kuchomea kwa kila pini kikizingatiwe kuwa sekunde 3-5 tu, na halijoto isizidi 350°C. Joto liletwe kwenye pini, si kwenye kifuniko chenyewe.
- Kuchomea kwa wimbi la solder/Kuchomea kwa kurudisha:The specified condition is 260°C for 5 seconds at a distance of 4.0mm from the package body. This means the component can withstand typical infrared or convection reflow profiles, but the thermal capacity of the leads must be considered to ensure the package itself does not overheat.
- Cleaning:If cleaning is required after soldering, use solvents compatible with the epoxy molding compound. Avoid ultrasonic cleaning unless its safety for the component has been verified.
- Uhifadhi:Hifadhi katika anga kavu na linalozuia umeme ndani ya safu ya halijoto iliyowekwa (-55°C hadi +100°C). Vifaa vinavyohisi unyevunyevu vinapaswa kuhifadhiwa katika mfuko uliofungwa na dawa ya kukausha ikiwa havitakuwa vimeokwa kabla ya matumizi.
7. Mapendekezo ya Matumizi na Mazingatio ya Ubunifu
7.1 Matumizi ya Kawaida: Kigunduzi cha Moshi
Katika kigunduzi moshi cha optiki, LTE-4208M huwekwa ndani ya chumba, hivyo kwamba chini ya hali ya hewa safi, mwale wake hauangukii moja kwa moja kwenye fototransista iliyooanishwa. Wakati chembe za moshi zinapoingia kwenye chumba, zinatawanya mwanga wa infrared, na kusababisha sehemu ya mwanga kuelekezwa kwenye fototransista. Ongezeko la sasa la kigunduzi linalotokana husababisha kengele. Kwa matumizi haya:
- Chagua kiwango cha nguvu ya mionzi kinachotoa ishara ya kutosha kwa kugundua moshi kwa uhakika, wakati huo huo kupunguza kiwango cha juu cha matumizi ya nguvu.
- Tumia mkondo wa msukumo (mfano, msukumo mfupi wa juu, kama 100mA kwa 10μs) badala ya mkondo wa moja kwa moja kuendesha LED, ili kuongeza kilele cha ishara, kupata uwiano bora wa ishara kwa kelele, na kupunguza wastani wa matumizi ya nguvu, kupanua maisha ya betri.
- Fikiria kupunguzwa kwa joto kwa nguvu ya mionzi na mkondo wa juu zaidi, kwa sababu kigunduzi kinaweza kusanikishwa kwenye dari au mazingira mengine yenye mabadiliko makubwa ya joto.
7.2 Mazingatio ya Jumla ya Ubunifu
- Current Limiting:Always use a series resistor or constant current driver to limit the forward current. Never connect an LED directly to a voltage source.
- Reverse Voltage Protection:In circuits where reverse voltage transients may occur (e.g., inductive loads, hot-plugging), consider connecting a protection diode in parallel with the LED (cathode to anode) to clamp any reverse voltage below 0.7V.
- Heat Dissipation:Kwa uendeshaji endelevu karibu na kiwango cha juu cha sasa, zingatia mpangilio wa PCB. Kutoa eneo la kutosha la shaba karibu na pini husaidia katika upotezaji wa joto.
- Ubunifu wa Optics:Pembe nyemba ya mtazamo ya 20° hurahisisha ubunifu wa optics wa collimation, lakini inahitaji usawazishaji wa mitambo makini na kipokeaji. Kwa usambazaji mpana zaidi, diffuser au lenzi inaweza kuhitajika.
8. Ulinganisho wa Kiufundi na Tofauti
Ikilinganishwa na LED ya infrared ya jumla isiyo na kiwango, tofauti kuu ya LTE-4208M iko katika kiwango chake cha nguvu ya mionzi kilicho hakikishwa, kinachotoa utendakazi unaoweza kutabirika. Ikilinganishwa na kifaa cha LED ya infrared cha kukandamiza uso (SMD), ufungaji wa T-1 3/4 wenye shimo kupita, kwa sababu ya uwezo wake mkubwa wa kufyonza joto na pini ndefu zaidi, unaweza kutoa uwezo wa juu wa matumizi ya nguvu, na hivyo kuwezesha mkondo wa kuendesha unaoendelea au wa msukumo ulio juu zaidi. Ufungaji wake wa uwazi unafaa zaidi kuliko ufungaji wenye rangi au usambazaji wa mwanga wakati unahitaji pato la juu zaidi la mwanga wa mbele na ufafanuzi wa boriti, ingawa yenyewe haitoi kinga dhidi ya mwanga unaoonekana.
9. Maswali Yanayoulizwa Mara kwa Mara (Kulingana na Vigezo vya Kiufundi)
Swali: Kwa kuwa kiwango cha kilele ni 3A, naweza kutumia 3A kuendesha LED hii kwa mfululizo?
Jibu: Hapana. Kiwango cha 3A kinatumika kwa msukumo mfupi sana (10μs) chini ya uwiano maalum wa wajibu. Upeo wa sasa unaoendelea ni 50mA. Kuzidi hii kutaathiri kifaa haraka kwa sababu ya joto kupita kiasi.
Swali: Kwa nini kiwango cha voltage ya nyuma ni 5V tu?
A: Infrared LEDs are optimized for forward conduction. Their semiconductor structure is not designed to withstand high reverse bias. Ensure the circuit prevents the application of reverse voltage.
Q: How to select the correct bin (A to G)?
A: Select based on the signal strength required by your system at the receiver. If your detector circuit has high gain and you need to minimize power consumption, lower bins (A, B) may suffice. For longer distances, weaker detectors, or systems requiring high signal-to-noise ratio, choose higher bins (E, F, G). Testing with your specific optical path is recommended.
Q: The typical forward voltage is 1.6V. For a 20mA current, what size resistor should be used with a 5V power supply?
Jibu: R = (Vsupply- VF) / IF= (5V - 1.6V) / 0.020A = 170 ohms. Tumia thamani ya kawaida iliyo karibu zaidi (mfano, 180 ohms) na ukagua mkondo halisi: IF= (5V - 1.6V) / 180 = ~18.9mA, hii inakubalika.
10. Uchunguzi wa Kesi Halisi za Usanifu
Hali:Design a low-power, battery-powered object counter for an industrial conveyor belt. The system uses a through-beam sensor, where the LTE-4208M is placed opposite the LTR-3208 phototransistor across the conveyor belt.
Design Steps:
- Lengo:Kuongeza uimara wa betri huku ukihakikisha utambuzi thabiti wa vitu vyote.
- Njia ya kuendesha:Tumia operesheni ya msisimko. Udhibiti mdogo hutoa msisimko wa 100Hz, uwiano wa kazi ya 10% (kufungua kwa 1ms, kuzima kwa 9ms).
- Hesabu ya sasa:Ili kukaa ndani ya kikomo cha wastani cha nguvu, chagua sasa ya msisimko. Kulingana na Pd=100mW na VF~1.6V, wastani wa IFInafikia ~62.5mA. Kwa uwiano wa kazi wa 10%, msukumo wa IFInaweza kufikia hadi 625mA. Ili kupata ishara yenye nguvu, msukumo wa sasa wa 100mA ulichaguliwa kwa uangalifu.
- Uchaguzi wa vipengele:Chagua LTE-4208M ya daraja D au E ili kupata nguvu nzuri ya ishara. Chagua LTR-3208 phototransistor inayolingana.
- Saketi:Tumia pini ya GPIO ya microcontroller kuendesha transistor (k.m. NPN BJT au N-channel MOSFET), ambayo hubadilisha msukumo wa 100mA unaopita kwenye LED. Upinzani uliosanidiwa mfululizo huweka mkondo: R = (3.3VGPIO- VCE(sat)- VF) / IFThe phototransistor output is connected to a comparator or microcontroller ADC.
- Considerations:Ushawishi wa mwanga wa mazingira unazingatiwa kwa kusawazisha ugunduzi na mipigo ya LED (ugunduzi uliosawazishwa). Ushawishi wa joto kwenye nguvu ya pato unazingatiwa.
Mbinu hii inapunguza matumizi ya wastani ya umeme hadi takriban 10mA (100mA * 10%), badala ya 20-50mA ya kuendelea, na hivyo kuongeza kwa kiasi kikubwa maisha ya betri huku ikiendelea kudumisha mipigo ya mwanga yenye nguvu inayoweza kugundulika.
11. Kanuni ya Uendeshaji
LTE-4208M ni diodi ya p-n ya semiconductor inayotengenezwa kwa vifaa kama vile alumini-gali-arsenidi (AlGaAs). Wakati voltage chanya inayozidi nishati ya pengo la bendi ya nyenzo inatumika, elektroni kutoka eneo la n na mashimo kutoka eneo la p huingizwa kwenye eneo la makutano. Wakati vibebaji hivi vinarudiana, hutolea nishati. Katika diodi inayotoa mwanga (LED), nishati hii hutolewa hasa kwa njia ya fotoni (mwanga). Urefu wa wimbi (rangi) wa mwanga unaotolewa huamuliwa na nishati ya pengo la bendi ya nyenzo ya semiconductor. Kwa AlGaAs iliyosanidiwa hadi 940nm, nishati ya pengo la bendi ni takriban elektroni-volti 1.32 (eV). Ufungaji wa epoksi ulio wazi huchukua nafasi ya lenzi, kuunda muundo wa utoaji na kutoa ulinzi wa mazingira.
12. Mwelekeo wa Teknolojia
Teknolojia ya vitoa infrared inaendelea kukua. Mwelekeo unaohusishwa na vifaa kama vile LTE-4208M ni pamoja na:
- Uboreshaji wa ufanisi:Utafiti endelevu wa sayansi ya nyenzo unalenga kuboresha ufanisi wa umeme-wa-kuta (nguvu ya mwanga inayotolewa / nguvu ya umeme inayotumika) kwa LED za infrared, kupunguza joto na matumizi ya nguvu kwa mwanga sawa unaotolewa.
- Ubadilishaji wa kasi ya juu zaidi:Developing LEDs capable of faster switching for optical data communication (e.g., IrDA, Li-Fi) and high-speed sensing applications.
- Integration:Progressing towards integrated optoelectronic components that combine emitters, detectors, and sometimes driver circuits into a single module, simplifying design and improving alignment and performance consistency.
- Wavelength ya Mbadala:Kupanua kwa wavelengths zingine za karibu na infrared (k.m. 850nm, 880nm), kwa matumizi maalum kama ufuatiliaji wa macho (ambapo 940nm inapendelewa kwa sababu haiwezi kuonekana kwa urahisi) au kwa usawa na unyeti tofauti wa vichunguzi vya silikoni.
- Ufinyanzi wa Kifurushi:Ingawa vifurushi vya mashimo ya kupita bado vinavuma katika matumizi ya nguvu kubwa au uaminifu wa juu, mwelekeo wa kuelekea teknolojia ya kushikilia kwenye uso (SMD) ni mkali, ili kukidhi mahitaji ya usanikishaji wa otomatiki na muundo ulio na nafasi ndogo.
LTE-4208M, kwa vifurushi vyake vilivyokomaa vya T-1 3/4, pato la juu la mnururisho, na uainishaji mkali, inawakilisha suluhisho lililokomaa na la kuaminika, linalofaa kabisa kwa matumizi yake makuu, hasa katika hali ambapo usakinishaji wa mashimo ya kupita unapendelewa au unahitajika.
Maelezo ya kina ya istilahi za maelezo ya LED
Kamusi Kamili ya Istilahi za Teknolojia ya LED
I. Viashiria Muhimu vya Utendaji wa Kielektroniki na Mwanga
| Istilahi | Unit/Penunjukan | Penjelasan Populer | Kwa nini ni muhimu |
|---|---|---|---|
| Ufanisi wa Mwanga (Luminous Efficacy) | lm/W (lumens per watt) | The luminous flux emitted per watt of electrical power; the higher the value, the more energy-efficient. | Directly determines the energy efficiency rating and electricity cost of the luminaire. |
| Fluxi ya Mwanga (Luminous Flux) | lm (lumen) | Jumla ya kiasi cha mwanga kinachotolewa na chanzo cha mwanga, kinachojulikana kwa kawaida kama "mwangaza". | Huamua kama taa inatosha kuwa na mwangaza. |
| Pembe ya kuona (Viewing Angle) | ° (degree), e.g., 120° | The angle at which light intensity drops to half, determining the beam width. | Affects the illumination range and uniformity. |
| Joto la rangi (CCT) | K (Kelvin), k.m. 2700K/6500K | Joto la rangi ya mwanga, thamani ya chini huelekea manjano/joto, thamani ya juu huelekea nyeupe/baridi. | Huamua mazingira ya taa na matumizi yanayofaa. |
| Kielelezo cha Uonyeshaji Rangi (CRI / Ra) | Unitless, 0–100 | The ability of a light source to reproduce the true colors of objects, with Ra≥80 being good. | Inaathiri usahihi wa rangi, hutumiwa katika maeneo yenye mahitaji makubwa kama vile maduka makubwa, makumbusho ya sanaa. |
| Tofauti ya uvumilivu wa rangi (SDCM) | Idadi ya hatua za duaradufu ya MacAdam, kama vile "5-step" | A quantitative indicator of color consistency; a smaller step number indicates better color consistency. | Ensure no color variation among luminaires from the same batch. |
| Wavelengthu Kuu (Dominant Wavelength) | nm (nanomita), k.m. 620nm (nyekundu) | Thamani ya wavelength inayolingana na rangi ya LED ya rangi. | Determines the hue of monochromatic LEDs such as red, yellow, and green. |
| Spectral Distribution | Wavelength vs. Intensity Curve | Shows the intensity distribution of light emitted by the LED at various wavelengths. | Affects color rendering and color quality. |
Vigezo vya Umeme
| Istilahi | Ishara | Penjelasan Populer | Design Considerations |
|---|---|---|---|
| Forward Voltage | Vf | Voltage ya chini inayohitajika kuwasha LED, kama "kizingiti cha kuanzisha". | Voltage ya chanzo cha usukumaji lazima iwe ≥ Vf, voltage inajumlishwa wakati LED nyingi zimeunganishwa mfululizo. |
| Forward Current | If | The current value that enables the LED to emit light normally. | Inatumika kwa kawaida kuendesha kwa mkondo wa kudumu, mkondo huamua mwangaza na maisha ya huduma. |
| Maximum Pulse Current | Ifp | Peak current that can be sustained for a short period, used for dimming or flashing. | Pulse width and duty cycle must be strictly controlled, otherwise overheating damage will occur. |
| Reverse Voltage | Vr | Upeo wa juu wa voltage ya nyuma ambayo LED inaweza kustahimili, ukizidi huo unaweza kusababisha kuvunjika. | Mzunguko unahitaji kuzuia uunganishaji kinyume au mshtuko wa voltage. |
| Thermal Resistance | Rth (°C/W) | Upinzani wa joto kutoka kwenye chip hadi kwenye sehemu ya kuuza, thamani ya chini inaonyesha usambazaji bora wa joto. | Upinzani mkubwa wa joto unahitaji muundo wa upoaji joto wenye nguvu zaidi, vinginevyo joto la kiungo litaongezeka. |
| Uvumilivu wa kutokwa na umeme tuli (ESD Immunity) | V (HBM), kama vile 1000V | Uwezo wa kupiga umeme tuli, thamani ya juu haifai kuharibiwa na umeme tuli. | Hatua za kuzuia umeme tuli zinahitajika katika uzalishaji, hasa kwa LED zenye usikivu mkubwa. |
III. Usimamizi wa Joto na Uaminifu
| Istilahi | Viashiria Muhimu | Penjelasan Populer | Athari |
|---|---|---|---|
| Joto la Kiungo (Junction Temperature) | Tj (°C) | Halisi ya joto la kufanya kazi ndani ya chip ya LED. | Kupunguza kila 10°C kunaweza kuongeza maisha mara mbili; joto la juu sana husababisha kupungua kwa mwanga na kuteleza kwa rangi. |
| Kupungua kwa Mwanga (Lumen Depreciation) | L70 / L80 (saa) | Muda unaohitajika kwa mwangaza kushuka hadi 70% au 80% ya thamani ya awali. | Kufafanua moja kwa moja "maisha ya huduma" ya LED. |
| Kiwango cha Kudumisha Lumini (Lumen Maintenance) | % (kama 70%) | Asilimia ya mwangaza uliobaki baada ya kutumia kwa muda fulani. | Inaonyesha uwezo wa kudumisha mwangaza baada ya matumizi ya muda mrefu. |
| Mabadiliko ya Rangi (Color Shift) | Δu′v′ au Duaradufu ya MacAdam | Kiwango cha mabadiliko ya rangi wakati wa matumizi. | Inaathiri uthabiti wa rangi katika eneo la taa. |
| Thermal Aging | Kupungua kwa sifa za nyenzo. | Uharibifu wa nyenzo za ufungaji unaosababishwa na joto la juu kwa muda mrefu. | Inaweza kusababisha kupungua kwa mwangaza, mabadiliko ya rangi, au kushindwa kwa mzunguko wazi. |
Nne. Ufungaji na Nyenzo
| Istilahi | Aina za Kawaida | Penjelasan Populer | Sifa na Matumizi |
|---|---|---|---|
| Aina ya Ufungashaji | EMC, PPA, Ceramic | A housing material that protects the chip and provides optical and thermal interfaces. | EMC offers good heat resistance and low cost; ceramic provides superior heat dissipation and long lifespan. |
| Chip Architecture | Face-up, Flip Chip | Chip Electrode Layout. | Flip-chip offers better heat dissipation and higher luminous efficacy, suitable for high-power applications. |
| Phosphor coating | YAG, silicates, nitrides | Coated on the blue LED chip, partially converted to yellow/red light, mixed to form white light. | Different phosphors affect luminous efficacy, color temperature, and color rendering. |
| Lens / Usanifu wa Optics | Uso wa gorofa, microlens, kutafakari kwa ukamilifu | Optical structure on the encapsulation surface, controlling light distribution. | Determines the emission angle and light distribution curve. |
V. Quality Control and Binning
| Istilahi | Yaliyomo ya Uainishaji | Penjelasan Populer | Kusudi |
|---|---|---|---|
| Luminous Flux Binning | Codes such as 2G, 2H | Grouped by brightness level, each group has a minimum/maximum lumen value. | Ensure consistent brightness within the same batch of products. |
| Voltage binning | Codes such as 6W, 6X | Group by forward voltage range. | Facilitates driver power matching and improves system efficiency. |
| Kugawanya kwa makundi kulingana na rangi | 5-step MacAdam ellipse | Group by color coordinates to ensure colors fall within an extremely narrow range. | Ensure color consistency to avoid uneven colors within the same luminaire. |
| Color temperature binning | 2700K, 3000K, n.k. | Kugawanya kwa makundi kulingana na joto la rangi, kila kundi kina anuwai maalum ya kuratibu. | Inakidhi mahitaji ya joto la rangi katika mazingira tofauti. |
Sita, Uchunguzi na Uthibitishaji
| Istilahi | Kigezo/Uchunguzi | Penjelasan Populer | Significance |
|---|---|---|---|
| LM-80 | Lumen Maintenance Test | Long-term operation under constant temperature conditions, recording luminance attenuation data. | Used for estimating LED lifetime (combined with TM-21). |
| TM-21 | Lifetime projection standard | Kuhesabu maisha ya matumizi halisi kulingana na data ya LM-80. | Toa utabiri wa maisha wa kisayansi. |
| IESNA standard | Illuminating Engineering Society Standard | Covers optical, electrical, and thermal test methods. | Msingi unaokubalika kitaalamu wa upimaji. |
| RoHS / REACH | Uthibitisho wa usafi wa mazingira. | Hakikisha bidhaa hazina vitu hatari (kama risasi, zebaki). | Masharti ya kuingia kwenye soko la kimataifa. |
| ENERGY STAR / DLC | Energy Efficiency Certification | Energy efficiency and performance certification for lighting products. | Commonly used in government procurement and subsidy programs to enhance market competitiveness. |