Infrared LED Device Datasheet - Peak Wavelength 940nm - Technical Documentation

1. Product Overview

Waraka huu unatoa maelezo ya kiufundi ya kifaa cha LED (Diodi Inayotoa Mwanga) cha Infrared (IR). Kifaa hiki kinatumika hasa katika mifumo inayohitaji chanzo kisichoonekana cha mwanga, kama vile kifaa cha kudhibiti kwa mbali, sensorer za ukaribu, na taa za usiku. Faida kuu ya kifaa hiki ni urefu wa wimbi lake maalum la kilele, ambalo limeboreshwa ili kuendana na vigunduzi vya mwanga vya msingi wa silikoni, na kuwa na mwangaza mdogo sana kwa macho ya binadamu. Soko lengwa linajumuisha elektroniki za watumiaji, otomatiki ya viwanda, mifumo ya usalama, na matumizi ya magari yanayohitaji usambazaji wa ishara ya IR au hisia ya kuaminika.

2. In-depth Technical Parameter Analysis

The provided data specifies a key photometric parameter for this infrared LED.

2.1 Photometric Characteristics

Kigezo muhimu zaidi kinachofafanuliwa ni urefu wa wimbi la kilele (λp).

• Urefu wa wimbi la kilele (λp):940 nanometers (nm). This value indicates the specific point in the electromagnetic spectrum where the LED emits its maximum optical power. The 940nm wavelength falls entirely within the near-infrared (NIR) range. This wavelength is particularly advantageous because it aligns well with the peak sensitivity of common silicon photodiodes and phototransistors, ensuring efficient signal transmission and reception. Furthermore, compared to shorter infrared wavelengths like 850nm, 940nm light has lower visibility as a faint red glow, making it more suitable for covert applications.

Other typical photometric parameters for the infrared LED, such as radiant intensity (unit: milliwatts per steradian, mW/sr), viewing angle (unit: degrees), and forward voltage at a specified current, are not explicitly provided in the excerpt but are crucial for a complete circuit design.

2.2 Electrical Parameters

Ingawa maadili maalum hayajatolewa katika maandishi yaliyotolewa, tabia ya umeme ya LED ya infrared inafafanuliwa na vigezo muhimu kadhaa ambavyo mbuni lazima azingatie.

• Voltage ya mbele (Vf):Kupungua kwa voltage kwenye ncha za LED inapopitishwa na mkondo. Kwa LED ya kawaida ya infrared yenye msingi wa Gallium Arsenide (GaAs), thamani hii kwa kawaida iko kati ya 1.2V hadi 1.6V kwenye mkondo wake wa kawaida wa mbele.
• Forward current (If):The recommended continuous operating current. Exceeding the maximum rated forward current may lead to rapid performance degradation or catastrophic failure.
• Reverse voltage (Vr):Upeo wa juu wa voltage ambayo LED inaweza kukabiliana nayo wakati imewekwa kinyume na mwelekeo wa upitishaji. LED za infrared kwa kawaida zina rating ya chini ya voltage ya nyuma (kawaida karibu 5V) na zinaweza kuharibika kwa urahisi kutokana na mishtuko ya voltage ya nyuma.
• Matumizi ya nguvu:Jumla ya nguvu ya umeme inayobadilishwa kuwa joto na mwanga (Vf * If). Usimamizi sahihi wa joto unahitajika ili kuzuia joto kupita kiasi.

2.3 Thermal Characteristics

Usimamizi wa joto ni muhimu kwa uimara na utendaji thabiti wa LED.

• Joto la Kiungo (Tj):Joto la eneo linalotumika la chipu ya semiconductor. Joto la juu kabisa linaloruhusiwa la kiungo ni kikomo muhimu.
• Upinzani wa joto (Rθj-a):Kigezo hiki kinaonyeshwa kwa digrii Celsius kwa watt (°C/W), na kinawakilisha ufanisi wa uhamisho wa joto kutoka kiungo cha LED hadi hewa ya mazingira. Thamani ya chini inaonyesha uwezo bora wa kutawanya joto. Muundo wa kifuniko una ushawishi mkubwa kwenye thamani hii.
• Mkunjo wa kupunguza nguvu:A graph showing how the maximum allowable forward current decreases as ambient or junction temperature increases. Operating within these limits is critical for reliability.

3. Mfumo wa Uainishaji Maelezo

High-volume LED manufacturing leads to variations in key parameters. Binning is the process of sorting components into different groups (bins) based on measured performance to ensure consistency for end users.

3.1 Uainishaji wa Wavelength

Kwa LED hii ya infrared ya 940nm, vipengele vitapimwa na kugawanywa katika viwango kulingana na urefu halisi wa wimbi la kilele. Kwa mfano, kiwango kinaweza kufafanuliwa kama 935-940nm, 940-945nm, n.k. Hii inaruhusu mbuni kuchagua LED yenye uvumilivu madhubuti zaidi wa urefu wa wimbi ikiwa matumizi yanahitaji ulinganifu sahihi wa wigo.

3.2 Radiant Intensity/Optical Power Binning

LEDs are also binned according to their radiant output. This is crucial for applications requiring uniform brightness or specific signal strength. Bins are defined by minimum and maximum radiant intensity values at a standardized test current (e.g., 20-25 mW/sr, 25-30 mW/sr).

3.3 Forward Voltage Binning

To simplify current-limiting circuit design and ensure consistent behavior in parallel arrays, LEDs are binned by forward voltage (Vf). Common bins may group LEDs with Vf in ranges such as 1.2V-1.3V, 1.3V-1.4V, etc.

4. Performance Curve Analysis

Graphical data is crucial for understanding the behavior of devices under various operating conditions.

4.1 Sifa za Utoaji wa Umeme-Mvuke (I-V)

This curve plots the relationship between forward current (If) and forward voltage (Vf). It shows the typical exponential relationship of a diode. The curve is used to determine the operating point and to design appropriate current-limiting resistors or drive circuits. The "knee" voltage, where the current begins to increase rapidly, is a key characteristic.

4.2 Utegemezi wa Joto

Mikunjo kadhaa inaonyesha athari za joto.

• Forward Voltage vs. Temperature:Typically shows that Vf decreases linearly with increasing junction temperature (approximately -2mV/°C for infrared LEDs). This is important for constant current drivers.
• Radiant Intensity vs. Temperature:Inaonyesha jinsi pato la mwanga linavyopungua kadri joto linavyoongezeka. Kupunguzwa huku ni muhimu kwa matumizi yanayofanya kazi katika mazingira ya joto la juu.
• Usambazaji wa wigo wa jamaa dhidi ya joto:Inaonyesha jinsi urefu wa wimbi wa kilele unavyobadilika kidogo kadri joto linavyoongezeka (kwa kawaida kuelekea urefu wa wimbi mrefu zaidi).

4.3 Usambazaji wa Wigo

The chart plots relative radiant power versus wavelength. It shows the peak at 940nm and the spectral bandwidth (typically full width at half maximum, or FWHM, which is usually around 40-50nm for infrared LEDs). A narrower bandwidth indicates light that is closer to being monochromatic.

5. Taarifa za Mitambo na Ufungaji

The provided excerpt contains specific packaging details.

5.1 Packaging Level

This component is protected by a multi-layer packaging system:

• Mfuko wa Kinga ya Utoaji Umeme wa Tuli (ESD):Chombo kikuu kinachotumika kuhifadhi kipengele kimoja cha LED au reel. Mfuko huu umetengenezwa kwa nyenzo zinazotumia umeme wa tuli, ili kuzuia uharibifu unaosababishwa na utoaji umeme wa tuli wakati wa usafirishaji na uhifadhi.
• Sanduku la ndani:A smaller box or tray used to hold multiple ESD bags or reels, providing physical structure and additional protection.
• Outer Box:The primary container used for shipping, containing multiple inner boxes. Designed to remain sturdy during transportation and storage.

5.2 Packaging Quantity

The document explicitly lists "Packaging Quantity" as a key parameter. This refers to the number of individual LED components contained in a standard shipping unit (e.g., quantity per reel, per tube, or per bag within an inner box). For surface-mount devices, common quantities are 1000, 2000, or 5000 pieces per reel.

5.3 Physical Dimensions and Polarity

Ingawa hakuna vipimo sahihi vilivyotolewa, ufungashaji wa kawaida wa LED ya infrared (kama vile LED ya shimo la 3mm au 5mm, au ufungashaji wa kusakinishwa kwenye uso kama 0805, 1206) huwa na michoro ya kina ya mitambo. Michoro hiyo inabainisha urefu, upana, urefu wa mwili, umbali wa pini, na vipimo vya pini. Muhimu zaidi, inajumuisha kitambulisho cha upeo, ambacho kwa kawaida huonyeshwa kupitia makali ya gorofa kwenye lenzi, pini fupi, nukta kwenye ufungashaji, au alama maalum kwenye pedi ili kuashiria cathode (terminali hasi).

6. Soldering and Assembly Guide

Usahihi wa kukusanywa ni muhimu kwa uaminifu.

6.1 Reflow Soldering Temperature Profile

Kwa LED za infrared zilizowekwa kwenye uso, ni lazima kufuata mfuatano wa joto ulipendekezwa wa reflow soldering. Hii inajumuisha:

• Preheat/Ramp-up Rate:Typically 1-3°C per second to avoid thermal shock.
• Soak Zone:Ku hay muddo hooseeya heerkulka dhexe ee biraha, si loo kiciyo dheefta lagu xiro oo loo simo heerkulka guddiga wareegga.
• Qaybta soo noqosho (dhexe):Heerkulka ugu sarreeya, waa inuu ku filan yahay sare si uu u dhalaaliyo biraha (tusaale, SAC305 waa 240-250°C), laakiin waa inuu hooseeyaa oo muddadiisu gaaban tahay si aan u dhaawicin LEDda (heerkulka ugu badan ee qalabku inta badan waa 260°C, 10 ilbiriqsi).
• Kasi ya kupoza:Mchakato wa kupoza unaodhibitiwa, ili kugandisha mwamba wa muunganisho kwa usahihi.

6.2 Key Considerations

• Ulinzi dhidi ya ESD:Daima shughulikia vipengele katika mazingira salama ya ESD kwa kutumia mkanda wa mkono uliowekwa ardhini na godoro linaloendesha umeme.
• Kipimo cha Unyeti wa Unyevu (MSL):Ikiwapo inatumika, ufungashaji utakuwa na kiwango cha MSL (mfano, MSL 3). Vipengee vilivyozidi maisha yao ya kiwandani lazima vikaushwe kabla ya kuyeyusha tena, ili kuzuia uharibifu wa athari ya "popcorn".
• Usafishaji:Tumia tu vimumunyisho vyenye usafishaji vinavyolingana, ili kuepuka kuharibu lenzi au epoksi ya LED.
• Mkazo wa Mitambo:Avoid applying direct pressure to the LED lens during placement or testing.

6.3 Masharti ya Uhifadhi

Components should be stored in their original unopened ESD bags in a controlled environment. Recommended conditions are typically a temperature between 5°C and 30°C with relative humidity below 60%. Avoid exposure to direct sunlight, corrosive gases, or excessive dust.

7. Ufungaji na Taarifa za Kuagiza

Data ya mzunguko wa maisha ya hati inaonyesha "Toleo: 5" na "Uhalali: Kudumu", ikionyesha kuwa hii ni hati thabiti, isiyodhibitiwa kusitishwa iliyotolewa tarehe 27 Mei 2013. Vipimo vya ufungaji vinafafanuliwa wazi katika Kifungu cha 5.1. Msimbo wa kuagiza au modeli kwa kawaida hufuata mkataba wa kutaja ambao huficha sifa muhimu, kama vile aina ya kifurushi, safu ya urefu wa wimbi, safu ya nguvu, na idadi ya ufungaji (mfano, "IR940-SMD1206-B2-2K" inaweza kumaanisha LED ya infrared ya 940nm yenye kifurushi cha 1206, safu ya nguvu B2, inayotolewa kwa namna ya reel ya vipande 2000).

8. Application Recommendations

8.1 Typical Application Scenarios

• Kifaa cha Udhibiti wa Miali ya Infrared:Used for televisions, audio systems, and set-top boxes. The 940nm wavelength is the industry standard.
• Proximity and Presence Sensors:Used in smartphones to disable the touchscreen during calls, automatic faucets, and security light switches.
• Hesabu na Ugunduzi wa Vitu:Inatumika kwenye Mashine za Kuuza Kiotomatiki, Mstari wa Usanikishaji wa Viwanda, na Vifaa vya Uchapishaji.
• Mwanga wa Kuona Usiku:Inayounganishwa na kamera nyeti kwa mionzi ya infrared, inatumika kwa usimamizi katika hali ya mwanga mdogo.
• Usafirishaji wa data kwa njia ya mwanga:Inatumika kwa mawasiliano ya mfululizo ya umbali mfupi na kasi ya chini (IrDA) au kiungo cha data cha viwanda.

8.2 Mazingatio ya Ubunifu

• Drive Circuit:Always use a series current-limiting resistor or a constant current driver. Never connect an LED directly to a voltage source.
• Heat Dissipation:Kwa uendeshaji wa mkondo mkubwa au joto la juu la mazingira, hakikisha eneo la kutosha la shaba la PCB au kifaa cha kupoeza cha nje, ili kudhibiti upinzani wa joto wa LED.
• Usanifu wa macho:Fikiria pembe ya mtazamo ya LED. Tumia lenzi au kifaa cha kutafakari kulingana na mahitaji ya matumizi ili kuunganisha au kutawanya mwale.
• Ulinganisho wa Kigunduzi cha Mwanga na Umeme:Hakikisha kigunduzi cha mwanga na umeme kilichochaguliwa (photodiode, phototransistor) kina usikivu mkubwa kwenye 940nm. Ikiwa usumbufu wa mwanga wa mazingira ni mkubwa, tumia kichujio cha infrared kuzuia mwanga unaoonekana.
• Uwezo wa Kupinga Kelele za Umeme:Katika matumizi ya sensor, mabadilisho ya ishara ya infrared (kwa mfano, kwa kutumia mabeba ya 38kHz) na mpokeaji ulio na mipangilio ya sauti hutumiwa kuzuia usumbufu wa mwanga wa mazingira kutoka kwa jua au taa za fluorescent.

9. Ulinganisho wa Teknolojia

Ikilinganishwa na vyanzo vingine vya mwanga wa infrared, LED hii ya 940nm ina faida maalum.

• Ikilinganishwa na LED ya infrared ya 850nm:Mwanga wa 940nm una mwonekano mdogo sana wa mwanga nyekundu dhaifu, na kufanya uwe bora zaidi kwa ufuatiliaji usioonekana. Hata hivyo, kiwango cha hisia cha kigunduzi cha mwanga cha silikoni kwenye 940nm ni kidogo chini kuliko 850nm, na unyonyaji wa anga pia ni wa juu kidogo.
• Ikilinganishwa na taa ya infrared ya incandescent:LED zina ufanisi mkubwa zaidi, muda wa kukabiliana wa haraka zaidi (inasaidia usimbaji wa kasi ya juu), nguvu ya mitambo ya juu zaidi, na maisha ya kazi ya muda mrefu zaidi (maelfu ya masaa).
• Ikilinganishwa na diodi ya laser:LED ina pato la wigo pana zaidi na eneo la utoaji kubwa zaidi, ikitoa mwanga unaotawanyika unaorahisishwa kwa matumizi ya taa ya jumla na kugundua. Pia ni nafuu zaidi, na haihitaji saketi ngumu za kuendesha na usalama kama diodi ya laser.

10. Maswali Yanayoulizwa Mara kwa Mara (FAQ)

Q1: Je, lengo la urefu wa wimbi la kilele cha 940nm ni nini?
A1: Urefu wa wimbi wa 940nm ndio bora zaidi kwa sababu unalingana vizuri na unyeti wa kigunduzi cha mwanga cha silikoni, wakati huo huo hauonekani kwa macho ya binadamu, na kufanya uwe chaguo bora kwa matumizi ya kugundua kwa siri na udhibiti wa mbali.

Q2: Je, unawezaje kuamua thamani sahihi ya upinzani wa kuzuia mkondo?
A2: Tumia sheria ya Ohm: R = (Voltage ya usambazaji - Vf) / If. Lazima ujue voltage ya usambazaji wako (Vsupply), voltage ya mbele ya LED (Vf) kutoka kwenye karatasi ya data au kikundi, na mkondo wa mbele unaohitajika (If). Hakikisha kila wakati nguvu ya kiwango cha upinzani (P = (Vsupply - Vf) * If) inatosha.

Q3: Je, naweza kutumia LED hii nje ya nyumba?
A3: Ndiyo, lakini kwa tahadhari. Lensi ya epoxy inaweza kuchakaa chini ya mionzi ya muda mrefu ya UV. Muhimu zaidi, mwanga mkali wa jua una sehemu nzito ya infrared ambayo inaweza kujaza kikamilifu kipokeaji. Kutumia kichujio cha macho na ishara iliyorekebishwa ni muhimu kwa uendeshaji thabiti nje ya nyumba.

Q4: Kwa nini ulinzi wa ESD ni muhimu sana kwa LED?
A4: Sehemu za semiconductor katika LED ni nyeti sana kwa kutokwa kwa umeme wa tuli wenye voltage kubwa. Tukio la ESD linaweza kupunguza pato la mwanga mara moja, kuongeza mkondo wa uvujaji, au kusababisha kushindwa kabisa, bila uharibifu wowote unaoonekana.

Q5: "Idadi ya ufungashaji" inamaanisha nini?
A5: Inabainisha idadi ya vipengele vya LED vinavyotolewa katika kitengo cha kawaida cha mauzo, kwa mfano kwenye reel, kwenye mrija, au ndani ya mfuko wa kuzuia umeme tuli. Hii ni muhimu kwa upangaji wa uzalishaji na usimamizi wa hesabu.

11. Matumizi Halisi

11.1 Sensor Rahisi ya Ufikiaji

Kunaweza kujenga sensor ya msingi ya kutafakari kwa kuweka LED ya infrared ya 940nm na transistor ya fotoelektrini kwa upande mmoja. LED inaendeshwa na mkondo wa mapigo. Wakati kitu kinakaribia, kinatafakari mwanga wa infrared kurudi kwenye transistor ya fotoelektrini, na kusababisha ongezeko la mkondo wa kolekta yake. Kisha, saketi ya kulinganisha inaweza kusababisha ishara ya pato la dijiti. Muundo huu hutumika katika kugundua karatasi kwenye printa na kuamilisha vikunja mikono kwa hewa.

11.2 Long-Range Infrared Illuminator for CCTV

Kwa kamera za usalama za kuona usiku, inahitajika kujenga safu ya LED nyingi zenye nguvu kubwa za 940nm. LED zinazimwa na kiendeshi cha mkondo wa mara kwa mara kinachoweza kutoa mamia ya miliampea. Lenzi ya Fresnel huwekwa mbele ya safu ili kuunganisha mwanga kuwa mwale, na kupanua upeo wa uangaziaji wenye ufanisi hadi mamia ya mita. Kwa muundo huu wenye nguvu kubwa, usimamizi wa joto kupitia vikunja joto vikubwa vya alumini ni muhimu sana.

12. Kanuni ya Uendeshaji

An infrared light-emitting diode (IR LED) is a semiconductor p-n junction device. When forward-biased (applying a positive voltage to the p-side relative to the n-side), electrons from the n-region are injected into the p-region, while holes from the p-region are injected into the n-region. These minority carriers recombine with majority carriers in the opposite regions. In direct bandgap semiconductors commonly used for IR LEDs, such as gallium arsenide (GaAs), this recombination event releases energy in the form of photons (light particles). The wavelength (color) of the emitted photon is determined by the bandgap energy (Eg) of the semiconductor material, according to the formula λ = hc/Eg, where h is Planck's constant and c is the speed of light. By adjusting the semiconductor alloy composition (e.g., using AlGaAs or InGaAs), the bandgap and thus the emission wavelength can be precisely controlled to produce the specified 940nm output here.

13. Mwelekeo wa Teknolojia

The infrared LED technology field continues to develop. Key trends include:

• Power and Efficiency Enhancement:Uboreshaji endelevu wa sayansi ya nyenzo na ufungaji unazalisha LED za infrared zenye mkondo mkubwa wa mnururisho na ufanisi bora wa ubadilishaji wa umeme-kwa-mwanga, na kufanya vifaa viwe vidogo zaidi au uwezekano wa kuangazia umbali mrefu zaidi kwa nguvu sawa ya pembejeo.
• Udogo:Mahitaji ya vifaa vidogo vya matumizi ya kaya yanachochea kuongezeka kwa LED za infrared katika vifurushi vidogo vya kusakinishwa kwenye uso (k.m. 0402, 0201) na vifurushi vya kiwango cha chip (CSP).
• Integrated Solutions:The trend is to integrate infrared LEDs, photodetectors, driver circuits, and signal processing (such as ambient light suppression) into a single module or System-in-Package (SiP), thereby simplifying the end-user's design.
• Expanding to New Wavelengths:Ingawa 850nm na 940nm zinatawala, kwa matumizi maalum kama vile 1050nm kwa LIDAR salama kwa macho ya binadamu au masafa maalum ya mwanga kwa kuchunguza gesi, hamu inaongezeka kwa urefu mwingine wa mawimbi ya infrared.
• Usimamizi bora wa joto:Miundo mpya ya ufungaji yenye upinzani mdogo wa joto na nyenzo zenye uendeshaji bora wa joto zinaongeza maisha ya LED na kusaidia mikondo ya juu ya kuendesha.