ITR20403 Photoelectric Interrupter Datasheet - Package 4.0x3.0x2.0mm - Forward Voltage 1.6V - Power Dissipation 75mW - Infrared 940nm - Technical Documentation

1. Product Overview

ITR20403 ni moduli kompaktii ya kukatiza mwanga, iliyoundwa kwa matumizi ya kuhisi bila kugusa. Inaunganisha diode inayotoa miali ya infrared (IRED) na transistor ya fotoelektriki ya silikoni ndani ya kifuniko kidogo cha plastiki nyeusi cha thermoplastiki. Kazi kuu ya kifaa hiki ni kugundua kukatizwa kwa boriti ya miali ya infrared kati ya kifaa chake cha kutolea na kipokezi.

1.1 Core Advantages and Target Market

Kifaa hiki kina faida muhimu kadhaa zinazomfanya kifae kwa matumizi ya usahihi. Wakati wake wa kujibu haraka na unyeti wa juu unaweza kugundua kwa uaminifu vitu vinavyosogea kwa kasi. Ufungashaji nyembamba na mdogo hurahisisha ujumuishaji katika miundo yenye nafasi ndogo, jambo la kawaida katika vifaa vya elektroniki vya watumiaji na otomatiki ya ofisi. Sifa muhimu ya kiufundi ni muundo wa kifuniko chake, ambao hufanya transistor ya mwanga kupokea mionzi hasa kutoka kwa LED ya infrared iliyojumuishwa, na hivyo kupunguza usumbufu na kelele kutoka kwa vyanzo vya mwanga vya mazingira. Soko kuu lengwa linajumuisha vifaa vya kuchora picha, mifumo ya usindikaji wa hati, na vifaa mbalimbali vya udhibiti otomatiki vinavyohitaji kugundulika kwa usahihi kwa msimamo au uwepo.

2. Uchambuzi wa kina wa Vigezo vya Teknolojia

Sehemu hii inatoa ufafanuzi wa kina na usio na upendeleo wa vipimo vya umeme, vya macho na vya joto vya kifaa vilivyobainishwa katika hati ya maelezo ya kiufundi.

2.1 Viwango vya Juu Kabisa

Absolute maximum ratings define the stress limits that may cause permanent damage to the device. These are not recommended operating conditions.

• Input (IRED) Power Dissipation (Pd):Thamani ya juu ni 75 mW wakati joto la hewa huria ni sawa au chini ya 25°C. Kuzidi kikomo hiki kunaweza kusababisha uharibifu wa joto wa chip ya LED.
• Voltage ya kinyume ya pembejeo (VR):Upeo wa 5 V. Kutumia voltage ya kinyume ya juu zaidi kunaweza kusababisha kuvunjika kwa kiungo.
• Mkondo endelevu wa mbele (IF):Maximum 50 mA. This is the highest DC current that the IRED can withstand.
• Output (Phototransistor) Power Dissipation (Pd):Maximum 75 mW at a free-air temperature equal to or below 25°C.
• Collector current (IC):Phototransistor output maximum 20 mA.
• Collector-emitter voltage (BV_CEO):Maximum 30 V. This is the breakdown voltage when the base is open.
• Operating temperature (T_opr):-25°C to +80°C. Ensures the device operates normally within this ambient temperature range.
• Storage temperature (T_stg):-40°C to +85°C.
• Pin soldering temperature (T_sol):Measured at 3mm from the package body, maximum 260°C for 5 seconds. This is crucial for assembly process control.

2.2 Electro-Optical Characteristics

Vigezo hivi vinapimwa chini ya hali za kawaida za majaribio (Ta=25°C), na vinawakilisha utendaji wa kawaida wa kifaa.

• Voltage ya mbele (V_F):Typical value 1.23V, maximum 1.6V at I_F=20mA. This parameter is crucial for designing the current-limiting drive circuit for the IRED.
• Peak wavelength (λ_P):940 nm. This is the nominal wavelength of the emitted infrared light, matching the peak sensitivity of the receiving phototransistor.
• Collector dark current (I_CEO):In V_CE=20V and without illumination, the maximum is 100 nA. This leakage current determines the noise floor of the sensor in the "off" state.
• Collector-emitter saturation voltage (V_CE(sat)):In I_C=2mA and irradiance (E_e) is 1 mW/cm², the maximum is 0.4V. For digital switching applications, a low saturation voltage is desirable.
• On-state collector current (I_C(on)):In V_CE=5V and I_FUnder test conditions of =5V and I=20mA, the range is from a minimum of 0.2 mA to a maximum of 5.0 mA. This wide range indicates variations in the Current Transfer Ratio (CTR) between devices, which must be considered in circuit design.
• Rise/Fall time (t_r, t_f):Under specified switching conditions, typically 15 μs each. This defines the maximum switching frequency achievable by the device.

3. Uchambuzi wa Mkunjo wa Utendaji

Mwongozo una maelezo ya tabia ya kawaida, yanayosaidia kuelewa tabia ya kifaa chini ya hali mbalimbali.

3.1 Uhusiano wa Mkondo wa Mbele na Joto la Mazingira

Mkunjo huu unaonyesha kupungua kwa sasa ya mbele ya IRED inayohitajika kadiri joto la mazingira linavyoongezeka. Ili kuzuia kuzidi joto la juu la kiungo na kuhakikisha uimara wa muda mrefu, ni lazima kupunguza sasa ya uendeshaji wakati kifaa kinatumika katika mazingira yenye joto la juu. Wabunifu lazima warejelee mchoro huu ili kubaini sasa salama ya uendeshaji kwenye joto la juu la mazingira la matumizi yao maalum.

3.2 Spectral Sensitivity

Miongo ya usikivu wa wigo ya kinzani cha infrared na fototransista imetolewa kwa mtiririko. Mkunjo wa IRED unaonyesha uhusiano kati ya nguvu ya mionzi ya jamaa na urefu wa wimbi, ukiwa na kilele cha 940 nm. Mkunjo wa fototransista unaonyesha msikivu wake wa jamaa kuhusiana na urefu wa wimbi wa mwanga unaoingia, na kilele chake kimeundwa kulingana na pato la kinzani. Usikivu huu mwembamba na unaolingana hupunguza kiwango cha juu cha usikivu kwa mwanga wa mazingira unaoonekana, ambayo ni sifa muhimu ya uendeshaji thabiti chini ya hali tofauti za mwanga.

3.3 Relationship Between Forward Current and Forward Voltage

This IV curve of the IRED shows the nonlinear relationship between forward voltage and current. This is crucial for selecting appropriate current limiting solutions (e.g., resistor, constant current source) to ensure stable infrared output across the operating temperature range and production variations.

4. Mechanical and Packaging Information

4.1 Package Dimensions

The device is packaged in a compact housing. Key dimensions include a body width of approximately 4.0 mm, a depth of 3.0 mm, and a height of 2.0 mm. The pin pitch is 2.54 mm (0.1 inch), which is the standard pitch for through-hole PCB mounting. Unless otherwise specified, all dimensional tolerances are ±0.25 mm. Pin dimensions are measured where they extend from the package body.

4.2 Polarity Identification and Mounting

Kipengele hiki kina pini nne. Kwa kawaida ya kawaida ya visambazaji vya mwanga kama hivi, pini mbili upande mmoja ni za mtoa miale ya infrared (anodi na katodi) na pini mbili upande mwingine ni za transistor ya mwanga (emita na kolekta). Mpangilio halisi wa pini lazima uthibitishwe kutoka kwenye mchoro wa kifurushi. Wakati wa usakinishaji, mashimo ya PCB lazima yalingane kwa usahihi na nafasi za pini, ili kuepuka kutumia mkazo wa mitambo kwenye mwili wa epoksi wakati wa kuingizwa, vinginevyo inaweza kusababisha udhibiti duni wa utendaji au kushindwa.

5. Welding and Assembly Guide

Usindikaji sahihi ni muhimu kwa kudumisha ukomo na utendaji wa kifaa.

5.1 Pin Forming

Ikiwa unahitaji kupinda pini, lazima ifanyikeKabla ya kuchomeleakufanywa. Sehemu ya kupindwa inapaswa kuwa zaidi ya 3 mm kutoka chini ya mfuko wa epoxy. Wakati wa kupinda, fremu ya waya lazima ishikiliwe kwa uthabiti ili kuzuia mkazo usifike kwenye ganda dhaifu la epoxy, vinginevyo inaweza kusababisha ufa au uharibifu wa ndani. Ukatishaji wa pini unapaswa kufanywa kwa joto la kawaida.

5.2 Soldering Process

A minimum distance of 3 mm must be maintained between the solder joint and the epoxy resin bubble shell. Recommended conditions are as follows:

• Manual Soldering:Upeo wa joto la chuma cha kulehemu ni 300°C (kwa chuma cha kulehemu cha 30W), muda wa juu wa kulehemu kila pini ni sekunde 3.
• Wave soldering/Dip soldering:Joto la juu la kukausha kabla ni 100°C, kwa muda wa sekunde 60. Joto la juu la bafu ya solder ni 260°C, muda wa juu wa kukaa ni sekunde 5.

Epuka kutumia mkazo wowote wa mitambo kwenye pini za kifaa wakati kipo katika joto la juu. Ulehemu wa kuchovya au wa mkono haupaswi kurudiwa. Baada ya kulehemu, kifaa kinapaswa kulindwa kutokana na mshtuko au mtikisiko wa mitambo hadi kirudi kwenye halijoto ya kawaida. Mchakato wa kupoa kwa kasi haupendekezwi.

5.3 Usafu na Uhifadhi

Matumizi ya usafishaji wa ultrasonic yamekatazwa.Kwa sababu mtetemeko wa masafa ya juu unaweza kuharibu vipengele vya ndani au muhuri wa epoxy. Kwa ajili ya uhifadhi, kifaa kinapaswa kuhifadhiwa katika hali ya 10-30°C na unyevu wa 70% au chini kwa muda wa miezi 3 baada ya usafirishaji. Kwa uhifadhi wa muda mrefu (hadi mwaka mmoja), chombo kilichotiwa muhuri chenye angahewa ya nitrojeni inapendekezwa, halijoto 10-25°C, unyevu 20-60%. Baada ya kufungua mfuko wa kuzuia unyevu, kifaa kinapaswa kutumiwa ndani ya masaa 24 au haraka iwezekanavyo, na vipengele vilivyobaki vinapaswa kutiwa muhuri upya kwa wakati.

6. Ufungaji na Taarifa za Kuagiza

Vipimo vya kawaida vya ufungaji ni vipande 120 kwa mrija, mrija 96 kwa sanduku, na sanduku 2 kwa kisanduku. Lebo ya ufungaji inajumuisha sehemu kama nambari ya sehemu ya mteja (CPN), nambari ya sehemu ya mtengenezaji (P/N), idadi ya ufungaji (QTY), nambari ya rejea (REF) na nambari ya kundi (LOT No.).

7. Application Recommendations

7.1 Typical Application Scenarios

• Uchunguzi wa Karatasi katika Printa/Kopio/Scanner:Kugundua ikiwa karatasi iko, imekwama, au mbele/nyuma ya hati.
• Ukaguzi wa nafasi ya kifuniko cha lenzi au kichujio katika kamera:Kuhisi ikiwa kifuniko cha lenzi kimefunikwa au gurudumu la kichujio liko katika nafasi sahihi.
• Non-contact limit sensing:Used in scanners, plotters, or automated platforms to detect the origin or limit positions without physical contact.
• Object counting or sorting:Kugundua vitu vinavyozuia mwale wa infrared kwenye ukanda wa usafirishaji.
• Uhisiaji wa diski ya msimbo wa mzunguko:Kusoma nyufa kwenye diski inayozunguka ili kupima kasi au nafasi (ingawa moduli maalum za msimbo kwa kawaida zinafaa zaidi kwa kazi zenye azimio la juu).

7.2 Mazingatio ya Ubunifu na Kiolesura cha Saketi

When designing with the ITR20403, the following factors must be considered:

1. Current Limiting for the IRED:It must be based on the power supply voltage (V_CC), the required forward current (I_F, typically 20mA to achieve the rated output) and the forward voltage drop (V_FCalculate the series resistance using ~1.23V. R = (V_CC- V_F) / I_F.
2. Output interface circuit:Phototransistors can be used in two common configurations:
   • Switching mode:Connect the collector to V via a pull-up resistor (e.g., 1kΩ to 10kΩ)_CC. The emitter is grounded. When the light beam is not blocked (transistor is on), the collector output is low (close to V_CE(sat)); when the beam is blocked (transistor cutoff), the output is high level (V_CC).
   • Analog mode:Phototransistors can be used in a common-emitter configuration with a collector resistor to generate a voltage proportional to light intensity. However, compared to photodiodes with op-amp circuits, their nonlinear response and temperature dependence make them less suitable for precise analog measurements.
3. Noise Immunity:Although resistant to ambient light, the circuit may still pick up electrical noise. It is recommended to use a bypass capacitor (0.1 μF) near the device's power supply pins and carefully design the PCB layout. For long cables or noisy environments, shielding or driving the output into a Schmitt trigger input can improve reliability.
4. Aperture and Slit Design:Objects blocking the beam should be opaque to infrared light. Detection resolution and repeatability depend on the ratio of the object's width to the slit width in the device housing. For edge detection, a blade or shutter with a sharp edge provides the most precise timing.

8. Ulinganisho wa Kiufundi na Tofauti

The ITR20403 differentiates itself primarily through its compact, low-profile form factor, which is advantageous in miniaturized consumer electronics. Its fast response time of 15 μs is suitable for detecting medium to high-speed events. The integrated housing with spectrally matched emitter and receiver provides inherent ambient light suppression, a feature that simplifies design compared to using discrete components. Compared to reflective object sensors, interrupters offer higher positional accuracy and are less sensitive to the color or reflectivity of the target object. Compared to slotted optical switches with wider gaps, this device's narrow gap allows for the detection of smaller objects or enables more precise edge detection.

9. Maswali Yanayoulizwa Mara kwa Mara (Kulingana na Vigezo vya Kiufundi)

9.1 Ni kiasi gani cha kawaida cha mkondo wa uendeshaji wa LED ya Infrared?

Sifa za optoelektroniki zimechunguzwa kwa I_F= 20 mA, ambayo ni sehemu ya kawaida na inayopendekezwa ya kufanya kazi ili kufikia mkondo maalum wa kolekta unaowashwa. Muundo wa saketi lazima uhakikishe kuwa hauzidi kiwango cha juu kabisa cha 50 mA.

9.2 Kwa nini safu ya mkondo wa kolekta inayowezeshwa (0.2mA hadi 5.0mA) ni pana sana?

Anuwai hii inawakilisha tofauti katika uwiano wa uhamishaji wa mkondo (CTR) kati ya vifaa, yaani, mkondo wa pato la fototransista (I_C) to the input current (I_F) of the IRED. This variation is inherent to the manufacturing process of photocouplers and interrupters. The circuit must be designed to operate correctly at the specified minimum I_C(on)(0.2mA) to ensure the reliability of all production units.

9.3 Kichaguzi hiki kinaweza kutumika nje?

Although the housing provides good ambient light suppression, direct sunlight contains a large amount of infrared radiation that may saturate the sensor. For outdoor use, additional optical filtering, shielding, or pulsed operation with synchronous detection is required to achieve reliable performance. The operating temperature range (-25°C to +80°C) also limits its application in extreme environments.

9.4 How close must an object be to block the beam?

Kifaa hiki kina pengo nyembamba na lenye mwelekeo. Kitu kinahitaji kupita kimwili kupitia mwanya kati ya kizindua na kigunduzi. Hakina uwezo wa kugundua "karibu"; mwale unapaswa kuzuiwa kabisa ili hali ya pato ibadilike kwa uhakika.

10. Design Use Case Study

Mazingira: Kigunduzi cha Ukosefu wa Karatasi kwenye Kichapishi cha Meza.

Mpango wa Utekelezaji:ITR20403 imesakinishwa kwenye njia ya kuingiza karatasi ya kichapishi. Leva au kibao kilichounganishwa kwenye spring kinakaa kwenye mwanya wa kichocheo wakati hakuna karatasi. Karatasi inapoingizwa, inasukuma kibao nje ya mwanya, kuruhusu mwale wa infrared kupita na kuwasha phototransistor.

Circuit Design:The IRED is driven at 20mA by the printer's 5V logic supply through a current-limiting resistor. The phototransistor collector is connected to the 3.3V microcontroller input pin via a 4.7kΩ pull-up resistor. The emitter is grounded.

Software Logic:The microcontroller pin is configured as a digital input. A low-level reading indicates the light beam is not blocked (flag is out, paper present). A high-level reading indicates the light beam is blocked (flag is in the slot, no paper), thereby triggering a "paper out" alarm to the user. Debounce logic (e.g., in software) is added to ignore mechanical vibrations of the flag.

Key considerations for this case:The flag mechanism must be designed to reliably and fully enter the sensor slit. The spring must provide sufficient force for proper positioning but not be excessive to avoid damaging the paper or causing sensor wear. The sensor's position must be securely fixed to maintain alignment.

11. Working Principle

ITR20403 inafanya kazi kulingana na kanuni ya usafirishaji na ugunduzi wa mwanga uliobadilishwa. Diodi inayotoa mwanga wa infrared (IRED) inawekezwa kwa mkondo wa mbele wa kudumu, na kufanya itoe fotoni kwenye urefu wa wimbi la kilele cha 940 nm. Ndani ya kifurushi kimoja, kinyume chake kuna fototransista ya silikoni ya aina NPN. Wakati boriti ya infrared inapita bila kizuizi kupitia pengo, inang'aa eneo la msingi la fototransista. Fotonili zilizovutiwa huzalisha jozi za elektroni na shimo, ambazo hufanya kama mkondo wa msingi, na kuifanya transista iweze kuwasha, na kuruhusu mkondo wa kolekta (I_C) kutiririka, ambao unalingana na nguvu ya mwanga. Wakati kitu kisicho na uwazi kinapoingia kwenye pengo, kinazuia boriti ya mwanga, mkondo wa msingi unaotokana na mwanga unakoma, na transista huzimwa. Saketi ya pato hubadilisha mabadiliko haya ya hali ya kuwasha/kuzimwa kuwa ishara ya umeme inayoweza kutumiwa. Kifurushi cha plastiki nyeusi cha thermoplastiki kinatumika kushikilia njia ya mwanga, kuzuia misukosuko ya macho, na kuzuia mwanga mwingi wa mazingira unaoonekana, ambao fotonili zake kwa kawaida hazina nguvu ya kutosha kuvutiwa na pengo la bendi la fototransista ya silikoni, na hivyo kutoa uchujaji wa asili wa macho.

12. Technology Trends

Vipofyushi kama ITR20403 inawakilisha teknolojia imara na ya kuaminika. Mwelekeo wa sasa katika uwanja huu unazingatia mambo kadhaa: kuimarisha ukubwa mdogo zaidi ili kuunganishwa katika vifaa vidogo vya kubebea na vinavyovaliwa; kuendeleza toleo la kifaa cha kusakinishwa kwenye uso (SMD) chenye uendeshaji bora wa kufunga kwa joto, ili kukabiliana na usanikishaji wa kiotomatiki; kuongeza kasi ya kubadili ili kusaidia viwango vya juu vya data katika matumizi ya encoder au mashine za kasi zaidi; na kuimarisha uwezo wa kukabiliana na mambo ya mazingira kama vile joto la juu, unyevu na uchafuzi. Pia kuna mwelekeo wa kuunganisha vipengele vya ziada, kama vile kichocheo cha Schmitt kilichojengwa ndani ya pato kwa ajili ya kuchelewesha, hata kiolesura cha dijiti (I2C, SPI) kwa ajili ya moduli ya hisia yenye akili zaidi na anwani. Hata hivyo, muundo wa msingi wa vipengele tofauti vilivyo na mashimo kama inavyoonyeshwa na ITR20403, bado una gharama nafuu na hutumiwa sana katika matumizi ambayo utendaji na ukubwa wake unatosha.