LTR-209 Phototransistor Datasheet - Clear Package - Vce 30V - Power 100mW - Chinese Technical Documentation

1. Product Overview

LTR-209 is a silicon NPN phototransistor specifically designed for infrared detection applications. It features a transparent plastic package and offers high sensitivity to incident light, particularly within the infrared spectrum. Characterized by a wide operating range, high reliability, and cost-effectiveness, this device is suitable for various sensing and detection systems.

1.1 Core Advantages

• Wide Collector Current Range:This device supports a wide range of collector current levels, providing flexibility for circuit design and sensitivity adjustment.
• High Sensitivity Lens:Lens integration enhances the device's sensitivity to incident infrared radiation and improves the signal-to-noise ratio.
• Low-cost plastic packaging:The use of economical plastic packaging reduces the overall system cost.
• Transparent packaging:The transparent housing maximizes the amount of light reaching the active semiconductor area, optimizing performance.

2. In-depth Technical Parameter Analysis

The following section provides a detailed and objective interpretation of the key electrical and optical parameters of the LTR-209 phototransistor.

2.1 Absolute Maximum Ratings

Viwango hivi vinabainisha mipaka ambayo inaweza kusababisha uharibifu wa kudumu wa kifaa. Hakuna uhakikisho wa uendeshaji chini ya hali hizi au kuzizidi.

• Power dissipation (P_D):100 mW. This is the maximum power the device can dissipate as heat when the ambient temperature (T_A) is 25°C. Exceeding this limit risks thermal runaway and failure.
• Collector-emitter voltage (V_{Mkurugenzi Mtendaji Mkuu}):30 V. Voltage ya juu inayoweza kutumiwa kati ya vituo vya kolekta na emita wakati msingi umewazi (mwangaza tu).
• Voltage ya Emita-Kolekta (V_ECO):5 V. Upeo wa voltage ya nyuma inayoweza kutumiwa kati ya emitter na collector.
• Safu ya joto ya uendeshaji:-40°C hadi +85°C. Kifaa kimeundwa kufanya kazi kwa kawaida ndani ya safu hii ya joto la mazingira.
• Mbalimbali ya joto la uhifadhi:-55°C hadi +100°C. Mbalimbali ya joto la uhifadhi katika hali isiyo ya kufanya kazi na ambayo haisababishi kupungua kwa utendaji.
• Joto la kuunganisha pini:5 sekunde kwenye 260°C kwa umbali wa 1.6mm kutoka kwa mwili wa kifuniko. Hii inafafanua mkunjo wa joto unaokubalika kwa utaratibu wa kuuza kwa mkono au mawimbi.

2.2 Electrical and Optical Characteristics

Vigezo hivi vilipimwa chini ya hali maalum za majaribio ya T_A=25°C, na vinafafanua utendaji wa kawaida wa kifaa.

• Collector-emitter breakdown voltage (V_(BR)CEO):30 V (min). At zero irradiance (E_C= 0 mW/cm²) and I_eMeasured under the condition of = 1mA. This confirms the absolute maximum ratings.
• Emitter-collector breakdown voltage (V_(BR)ECO):5 V (minimum). At zero irradiance and I_EMeasured under the condition of = 100µA.
• Collector-Emitter Saturation Voltage (V_CE(SAT)):0.4 V (max). The voltage drop across the device when it is fully "on" (conducting), at I_C= 100µA na E_e= 1 mW/cm² hali ya kupima. V ya chini_CE(SAT)Inafaa kupunguza hasara ya nguvu.
• Wakati wa kupanda (T_r) na wakati wa kushuka (T_f):ni 10 µs (kawaida) na 15 µs (kawaida) mtawalia. Vigezo hivi vinabainisha kasi ya kubadili kwa transistor ya fotoelektrini. Katika V_CC=5V, I_C=1mA, R_L=1kΩ conditions. This asymmetry is common in phototransistors.
• Collector dark current (I_{Mkurugenzi Mtendaji Mkuu}):100 nA (max). This is when the device is in complete darkness (E_e= 0 mW/cm²) and V_CEWhen = 10V, the leakage current flowing from the collector to the emitter. Low dark current is crucial for high-sensitivity applications to minimize noise.

3. Mfumo wa Uainishaji Maelezo

LTR-209 employs a binning system for its key parameter—On-state collector current (I_C(ON))—Binning is a quality control process that categorizes components into specific groups or "bins" based on measured performance. This allows designers to select devices with guaranteed performance ranges suitable for their applications.

3.1 Uainishaji wa Mkondo wa Collector ya Kuwasha

I_C(ON)Measured under standardized conditions: V_CE= 5V, E_e= 1 mW/cm², wavelength (λ) of infrared light source is 940nm. Based on the measured current, the device is categorized into the following bins:

• BIN C:0.8 mA (minimum) to 2.4 mA (maximum)
• BIN D:1.6 mA (minimum) to 4.8 mA (maximum)
• BIN E:3.2 mA (minimum) to 9.6 mA (maximum)
• BIN F:6.4 mA (minimum) — No upper limit specified in this datasheet excerpt.

Design Impact:Saketi iliyoundwa kwa kifaa cha BIN C (mkondo wa chini), ikitumia kifaa cha BIN F (mkondo wa juu) bila upimaji upya, inaweza kushindwa kufanya kazi ipasavyo, na kinyume chake pia ni kweli. Kubainisha msimbo wa kiwango ni muhimu ili kuhakikisha uthabiti wa utendakazi wa mfumo.

4. Performance Curve Analysis

Waraka wa data hutoa mikunjo kadhaa ya sifa, inayoonyesha jinsi vigezo muhimu vinavyobadilika kulingana na hali ya uendeshaji. Hii ni muhimu kwa kuelewa tabia halisi zaidi ya vipimo vya sehemu moja.

4.1 Relationship Between Collector Dark Current and Ambient Temperature (Figure 1)

Mchoro unaonyesha I_{Mkurugenzi Mtendaji Mkuu}(Dark current) inaongezeka kwa kasi kwa kielelezo kadiri joto la mazingira (T_A) linavyoongezeka. Kwa mfano, kwenye 100°C, mkondo wa giza unaweza kuwa wa viwango kadhaa vya juu zaidi kuliko kwenye 25°C. Hii ni kutokana na tabia ya msingi ya semiconductor inayosababishwa na ongezeko la vibeba malipo vinavyotokana na joto.Mambo ya Kuzingatia Katika Ubunifu:Katika matumizi ya joto la juu, ongezeko la mkondo wa giza linaweza kuwa chanzo kikubwa cha kelele, kinachoweza kuficha ishara dhaifu za mwanga. Inaweza kuhitajika usimamizi wa joto au utengenezaji wa ishara.

4.2 Uhusiano wa Matumizi ya Nguvu ya Collector na Joto la Mazingira (Mchoro 2)

Mkunjo huu wa kupunguza nguvu unaonyesha uhusiano wa kazi kati ya matumizi ya nguvu yanayoruhusiwa kwa kiwango cha juu (P_C) na T_A. Thamani kamili ya juu ya 100 mW ni halali tu kwa 25°C au chini. Kadiri T_AKwa kuongezeka kwa joto, uwezo wa kutoa joto wa kifaa hupungua, kwa hivyo nguvu ya juu inayoruhusiwa lazima ipunguzwe kwa mstari. Katika 85°C (joto la juu la uendeshaji), matumizi ya nguvu yanayoruhusiwa hupungua kwa kiasi kikubwa.Mambo ya Kuzingatia Katika Ubunifu:Usanifu wa saketi lazima uhakikishe kwamba matumizi halisi ya nguvu (V_CE* I_C) hayazidi thamani ya kupunguzwa kwa nguvu kwenye joto la juu la uendeshaji linalotarajiwa.

4.3 Uhusiano wa Muda wa Kupanda/Kushuka na Upinzani wa Mzigo (Mchoro 3)

Mkunjo huu unaonyesha usawazishaji kati ya kasi ya kubadili na ukubwa wa ishara. Muda wa kupanda (T_r) na muda wa kushuka (T_f) zote huongezeka kadri upinzani wa mzigo (R_L) unavyoongezeka. R kubwa_LInatoa mwingilio mkubwa wa voltage (ΔV = I_C* R_L), lakini hupunguza kasi ya mzunguko kwa sababu capacitance ya transistor inahitaji muda mrefu zaidi kupitia upinzani mkubwa kushtakiwa/kutolewa.Mambo ya Kuzingatia Katika Ubunifu:R_LThamani ya R lazima ichaguliwe kulingana na kama matumizi yanapendelea kasi ya juu (R ya chini_L) au faida kubwa ya voltage (R ya juu)._L) kuchagua.

4.4 Uhusiano wa Sasa ya Kukusanya ya Relatifi na Mwangaza (Mchoro 4)

Mchoro huu unaonyesha uhusiano kati ya sasa ya mkusanyiko iliyosanifiwa na msongamano wa nguvu ya mwanga unaoingia (mwangaza, E_e). Katika safu iliyochorwa (0 hadi takriban 5 mW/cm²) uhusiano huo ni wa mstari. Uwiano huu wa mstari ni sifa muhimu ya fototransistor inayotumika katika matumizi ya kugundua, kwani sasa ya pato inalingana moja kwa moja na nguvu ya mwanga wa pembejeo. Mkunjo huu ulipatikana kwa V_CEDrawn under the condition of = 5V.

4.5 Mchoro wa Uthibitishaji (Kielelezo 5)

Although the axes are abbreviated, the "Sensitivity Diagram" typically illustrates the spectral response of the detector. Silicon phototransistors like the LTR-209 are most sensitive to light in the near-infrared region, with a peak around 800-950 nm. This makes them well-suited for use with common infrared emitters (such as LEDs with λ=940nm, as described in the binning test conditions) and for filtering out visible light interference.

5. Taarifa za Mitambo na Ufungaji

5.1 Package Dimensions

This device uses a standard through-hole plastic package. Key dimensional specifications in the datasheet include:

• Vipimo vyote vimepewa kwa milimita (inchi ziko kwenye mabano).
• Isipokuwa imebainishwa vinginevyo, inatumika uvumilivu wa kawaida wa ±0.25mm (±.010").
• Upeo wa juu wa mfinyano wa hariri chini ya flange ni 1.5mm (.059").
• Umbali wa pini hupimwa mahali ambapo pini inatoka kwenye mwili wa kifurushi, jambo muhimu kwa muundo wa pedi za PCB.

Utambuzi wa polarity:Pini ndefu kwa kawaida ni kolekta, pini fupi ni emita. Upande wa gorofa kwenye ukingo wa kifuniko pia unaweza kuonyesha upande wa emita. Hakikisha kurejelea mchoro wa kifuniko kwa uthibitisho.

6. Mwongozo wa Uchomeaji na Usanikishaji

Mwongozo mkuu unaotolewa unatumika kwa kuunganisha kwa mkono au mawimbi: pini zinaweza kustahimili joto la 260°C kwa muda wa sekunde 5, kipimo kinachukuliwa umbali wa 1.6mm (.063") kutoka kwa mwili wa kifuniko. Hii inazuia uharibifu wa joto kwa chipu ya ndani ya semiconductor na kifuniko cha plastiki.

Kwa ufungaji wa reflow:Ingawa haijaainishwa wazi katika hati hii ya data, kifurushi sawa cha plastiki kwa kawaida kinahitaji kufuata mkunjo wa kiwango cha JEDEC (k.m. J-STD-020), na kiwango cha juu cha joto kwa kawaida hakizidi 260°C. Kiwango maalum cha unyevu nyeti (MSL) na mahitaji ya kukaanga hayajatolewa hapa, na yanapaswa kuthibitishwa na mtengenezaji.

Masharti ya uhifadhi:Vifaa vinapaswa kuhifadhiwa katika anga kavu, isiyo na kutu, ndani ya safu ya joto maalum ya -55°C hadi +100°C. Kwa uhifadhi wa muda mrefu, hatua za kuzuia umeme zipendekezwa.

7. Mapendekezo ya Matumizi

7.1 Mandhari ya Kawaida ya Utumiaji

• Object Detection and Proximity Sensing:Used in conjunction with infrared LEDs to detect the presence, absence, or proximity of objects (e.g., in vending machines, printers, industrial automation).
• Slot-Type Sensors and Encoders:Detects the interruption of infrared beams to count objects or measure rotational speed.
• Remote control receiver:Although slower than dedicated photodiodes, they can be used in simple, low-cost infrared receiving circuits.
• Grating na Mfumo wa Usalama:Unda miale isiyoonekana kwa ajili ya kugundua uvamizi.

7.2 Kuzingatia Katika Ubunifu na Usanidi wa Sakiti

The most common circuit configuration isCommon emittermode. The collector of the phototransistor is connected through a load resistor (R_CC) Inaunganishwa kwa chanzo cha umeme chanya (V_L), emitter imegunduliwa chini. Mwangaza unaoingia husababisha mkondo wa mwanga (I_C) kutiririka, na kutoa voltage ya pato (V_OUT): V_OUT= V_CC- (I_C* R_L). When there is no light, V_OUTis at a high level (~V_CC). When there is light, V_OUT drops.

Key design steps:

1. Chagua R_L:Kulingana na anuwai ya pato inayohitajika (V_CC/I_C(ON)) na kasi inayotarajiwa (tazama Mchoro 3). Thamani kati ya 1kΩ hadi 10kΩ ni za kawaida.
2. Consider bandwidth:R_LThe value, combined with the junction capacitance of the device, forms a low-pass filter. For pulse operation, ensure the circuit's RC time constant is much smaller than the pulse width.
3. Manage ambient light:Tumia kichujio cha mwanga (kifuniko cha rangi nyeusi au kinachoruhusu mionzi ya infrared kwenye sensor) ili kuzuia mwanga unaotaka kuzuiwa na kupunguza kelele.
4. Urekebishaji wa joto:Kwa kuhisi sahihi ya analog, fikiria utegemezi wa mkondo wa giza kwenye joto (Mchoro 1). Mbinu ni pamoja na kutumia sensor ya kumbukumbu ya giza inayolingana katika usanidi wa tofauti au kutekeleza urekebishaji wa programu.

8. Technical Comparison and Differentiation

Ikilinganishwa na vichunguzi vingine vya mwanga:

• Ikilinganishwa na diodi ya picha:Phototransistors offer inherent current gain (β or h_FE), resulting in higher output current at the same light level. This simplifies circuit design as less subsequent amplification is required. However, phototransistors are typically slower than photodiodes (longer rise/fall times) and have a more limited linear range.
• Compared to photodarlingtons:Phototransistor ya Darlington hutoa faida kubwa zaidi kuliko phototransistor ya kawaida, lakini wakati wa kukabiliana ni polepole zaidi, na voltage ya kujaa (V_CE(SAT)) pia ni ya juu zaidi. LTR-209 hutoa usawa mzuri kati ya faida, kasi na kushuka kwa voltage.
• Sifa tofauti za LTR-209:其Ufungaji wa uwazi和Lensi iliyojumuishwaNi sababu muhimu ya kutofautisha. Phototransistors nyingi za ushindani hutumia ufungaji wa epoxy nyeusi unaopunguza mwanga. Ufungaji wa uwazi wa LTR-209 unakuza upeo wa hisia, wakati lenzi husaidia kuzingatia mwanga unaoingia kwenye eneo linalofanya kazi, na kuimarisha mwelekeo na nguvu ya ishara.

9. Maswali Yanayoulizwa Mara kwa Mara (Kulingana na Vigezo vya Kiufundi)

9.1 "BIN" code inamaanisha nini? Kwa nini ni muhimu?

BIN code (C, D, E, F) kulingana na I_C(ON)) Classify the devices. It is crucial as it ensures a specific performance range. Using a device with the wrong grade may cause insufficient or excessive circuit sensitivity, leading to malfunctions. Be sure to specify the required grade when ordering.

9.2 Je, naweza kutumia sensor hii pamoja na chanzo cha mwanga kinachoonekana?

Although silicon material does respond to visible light, its peak sensitivity lies in the near-infrared region (refer to the implied Figure 5). For optimal performance and to avoid interference from ambient visible light, it is strongly recommended to pair it with an infrared emitter (typically 850nm, 880nm, or 940nm) and use an infrared pass filter on the detector.

9.3 Je, pato linabadilishwaje kuwa ishara ya dijiti?

The simplest method is to connect the output (collector node) to the input of a Schmitt-trigger inverter or a comparator with hysteresis. This converts the analog voltage swing into a clean digital signal, unaffected by noise. The comparator's threshold should be set between the "bright" and "dark" output voltage levels.

9.4 Why is my output unstable in bright, high-temperature environments?

Hii inawezekana kuwa ni kwa sababu ya ushawishi wa pamoja wa mkondo mkubwa wa giza (unaoongezeka kwa joto kulingana na Mchoro 1) na majibu ya mwanga wa mazingira. Suluhisho ni pamoja na: 1) Kuongeza kinga ya kimwili au mfereji ili kupunguza uwanja wa mtazamo, 2) Kutumia chanzo cha mwanga cha infrared kilichorekebishwa na utambuzi wa ulinganifu, 3) Kutekeleza mzunguko wa upendeleo au fidia ulio na utulivu wa joto.

10. Uchunguzi wa Kesi Halisi za Ubunifu

Scene:Design a paper detection sensor for the printer.

Implementation:Place the infrared LED and LTR-209 on opposite sides of the paper path, aligned to form a light beam. When paper is present, it blocks the beam. The phototransistor is configured in common-emitter mode, with R_L= 4.7kΩ and V_CC= 5V.

Component Selection and Calculation:Chagua kifaa kutoka kwenye BIN D (I_C(ON)= 1.6-4.8mA). Wakati hakuna karatasi (mwanga umekamilika), chukulia I_C= 3mA (kiwango cha kawaida). V_OUT= 5V - (3mA * 4.7kΩ) = 5V - 14.1V = -9.1V. Hii haiwezekani, inamaanisha transistor imejaa. Wakati imejaa, V_OUT≈ V_CE(SAT)≈ 0.4V (low-level signal). When the paper blocks the light beam, I_C≈ I_{Mkurugenzi Mtendaji Mkuu}(very small, ~nA), therefore V_OUT≈ 5V (high-level signal). The GPIO pin of the microcontroller can directly read this high/low-level signal to detect paper presence. It is recommended to add a decoupling capacitor (e.g., 100nF) between the sensor's power supply pins to filter out noise.

11. Kanuni ya Uendeshaji

Transista ya fotoelektriki ni aina ya transista ya makutano ya bipolar (BJT) ambayo eneo la msingi wake limefunuliwa kwenye mwanga. Fotonimu za mwanga zinazoingia zenye nishati ya kutosha huzalisha jozi za elektroni na shimo kwenye makutano ya msingi-kolekta. Mabebaji haya wa mwanga husafirishwa nje na uga wa umeme wa ndani, kwa ufanisi kuchukua nafasi ya mkondo wa msingi. Kisha, huu "mkondo wa msingi wa optiki" unazidishwa na faida ya mkondo wa transista (h_FE), na kuzalisha mkondo mkubwa zaidi wa kolekta. Ukubwa wa mkondo huu wa kolekta ni sawia na ukubwa wa mwanga unaoingia, na hivyo kutoa utendaji wa kuhisi. Ufungaji wa uwazi na lenzi ya LTR-209 huongeza kiwango cha juu cha idadi ya fotonimu zinazofika kwenye makutano nyeti ya semikondukta.

12. Mwelekeo wa Teknolojia

Phototransistors like the LTR-209 represent a mature and cost-effective technology. Current trends in optoelectronics include:

• Integration:Mwelekeo wa ufumbuzi uliojumuishwa, unaounganisha kigunduzi cha mwanga, kikuza sauti, na mantiki ya dijiti (kwa mfano, kizuizi cha mwanga chenye matokeo ya mantiki yaliyojengwa ndani) kwenye chipi moja, hupunguza idadi ya vipengele vya nje na kuboresha ukinzani wa kelele.
• Kifaa Kilichopachikwa kwenye Uso (SMD):Ingawa ufungaji wa tundu la kupita bado una umaarufu katika utengenezaji wa mfano na matumizi fulani, tasnia inaelekea kwa nguvu kwenye ufungaji mdogo wa SMD (kwa mfano SMT-3), ili kufaa kwenye usanidi wa otomatiki na muundo wenye nafasi ndogo.
• Uboreshaji wa Utendaji:Kukuza vifaa vyenye muda wa kujibu wa haraka zaidi, mkondo wa giza uliopunguzwa, na uthabiti wa juu wa joto, ili kukidhi mahitaji magumu zaidi ya matumizi katika sekta ya magari, viwanda, na vifaa vya matumizi ya kawaida.
• Uboreshaji Maalum wa Matumizi:Sensors are being customized for specific wavelengths (e.g., for heart rate monitoring at specific infrared wavelengths) or with built-in daylight filters.

The fundamental operating principle of phototransistors remains valid, and devices like the LTR-209 continue to be a reliable choice for a range of sensing needs, from basic to intermediate, due to their simplicity, robustness, and low cost.