ELD3H7 ELQ3H7 Optocoupler Datasheet - 8-Pin/16-Pin SSOP Package - Isolation Voltage 3750Vrms - Current Transfer Ratio 50-600% - Technical Documentation

1. Product Overview

ELD3H7 and ELQ3H7 are phototransistor-based optocouplers designed for electrical signal isolation. They consist of an infrared light-emitting diode optically coupled to a silicon phototransistor, all housed in a compact surface-mount package. Their primary function is to transfer electrical signals between two circuits while maintaining high electrical isolation, preventing the propagation of noise, ground loops, and voltage spikes.

The ELD3H7 integrates 2 independent isolation channels in an 8-pin SSOP (Shrink Small Outline Package). The ELQ3H7 integrates 4 independent channels in a 16-pin SSOP. Both models feature an ultra-thin profile of 2.0 mm, making them ideal for space-constrained applications. The devices use halogen-free, green molding compound and comply with lead-free and RoHS directives.

2. Key Features and Core Advantages

• Voltage ya Utofautishaji wa Juu:Rated value is 3750 V_rms(for 1 minute), ensuring reliable protection and safety in high-voltage environments.
• Wide current transfer ratio:At I_F= 5mA, V_CEUnder 5V conditions, the range from 50% to 600% provides design flexibility for different signal amplification requirements.
• Compact Form Factor:The SSOP package with a profile height of 2.0 mm is an ideal choice for high-density PCB design.
• Comprehensive Safety Certifications:Imepata uthibitisho wa UL (E214129), VDE (40028116), SEMKO, NEMKO, DEMKO, FIMKO na CQC, inarahisisha matumizi katika vifaa vinavyodhibitiwa ulimwenguni.
• Sifa za Kubadilisha Haraka:Chini ya masharti maalum ya majaribio, wakati wa kupanda kwa kawaida (t_r) ni 5 µs, wakati wa kushuka (t_f) ni 3 µs, inafaa kwa usambazaji wa ishara ya dijiti.

3. Soko Lengwa na Matumizi

Vichanganyaji vya mwanga hivi vimeundwa kwa matumizi yanayohitaji kutengwa kwa ishara kwa uaminifu na upinzani dhidi ya usumbufu wa kelele.

• DC-DC Converter:Inatoa utengano wa kitanzi cha maoni katika vifaa vya usambazaji wa umeme vya kubadili-badili.
• Programmable Logic Controllers na Uotomatiki wa Viwanda:Isolate digital I/O signals between the controller and field devices.
• Telecommunications Equipment:Isolate signal lines in modems, interfaces, and network hardware.
• Ujumla wa Mzunguko wa Kutengwa:Kusafirisha ishara kati ya nyaya zenye viwango tofauti vya uwezo wa ardhi au upinzani.

4. Uchambuzi wa kina wa Vigezo vya Kiufundi

4.1 Absolute Maximum Ratings

These are stress limits that must not be exceeded under any conditions to prevent permanent damage to the device.

• Input (LED side):Forward current (I_F) 60 mA; Peak forward current (I_FP) 1 A (pulse ya 1 µs); voltage ya nyuma (V_R) 6 V; nguvu inayotumika (P_D) 70 mW.
• Pato (upande wa transistor):Collector current (I_C) 50 mA; Collector-emitter voltage (V_CEO) 80 V; Emitter-collector voltage (V_ECO) 7 V; Power Consumption (P_C) 150 mW.
• Overall Device:Total power consumption (P_TOT) 200 mW; Isolation voltage (V_ISO)3750 V_rms.
• Joto:Operating range -55°C to +110°C; storage range -55°C to +125°C; soldering temperature 260°C (for 10 seconds).

4.2 Electrical and Optical Characteristics

Typical performance parameters measured at 25°C.

4.2.1 Input (Infrared LED) Characteristics

• Voltage ya Mwelekeo Sahihi (V_F):Thamani ya kawaida 1.2V, kwa I_FMaximum 1.4V at =20mA. This parameter is crucial for designing LED drive circuits.
• Reverse current (I_R):At V_RMaximum 10 µA at =4V, indicating the diode has good reverse blocking characteristics.
• Input capacitance (C_in):Typical value 30 pF, affecting high-frequency switching performance.

4.2.2 Sifa za Pato (Transista ya Fotoelektriki)

• Dark current (I_CEO):At V_CE=20V, I_FMaximum 100 nA at =0mA. This is the leakage current when the LED is off, affecting signal integrity in the off state.
• Breakdown voltage: BV_CEO≥ 80V, BV_ECO≥ 7V, defines the maximum allowable voltage across the transistor.
• Collector-emitter saturation voltage (V_CE(sat)):Typical value 0.1V, at I_F=10mA, I_C=1mA maximum 0.2V. For logic level output, lower V_CE(sat)Ni bora.

4.2.3 Sifa za Usafirishaji

• Uwiano wa Usafirishaji wa Umeme:Defined as (I_C/ I_F) * 100%. At I_F=5mA, V_CEUnder the condition of =5V, the specified range is from 50% to 600%. This broad grading allows for selection based on the required gain.
• Isolation resistance (R_IO):Minimum of 5×10 at 500V DC¹⁰Ω, ensuring excellent DC isolation.
• Isolation capacitance (C_IO):Typical 0.3 pF, maximum 1.0 pF. Low capacitance minimizes capacitive coupling of high-frequency noise across the isolation barrier.
• Switching time:Under test conditions (V_r=2V, I_f=2mA, R_CE=100Ω), rise time (t_C) typical value 5 µs, fall time (t_L) typical value 3 µs. These values determine the maximum usable data rate.

5. Mechanical and Packaging Information

5.1 Package Dimensions and Outline Drawing

The device adopts an SSOP package. The ELD3H7 (2-channel) uses an 8-pin SSOP, while the ELQ3H7 (4-channel) uses a 16-pin SSOP. Both share a common low-profile height of 2.0 mm. The datasheet provides a detailed dimension drawing containing all key dimensions (body size, lead pitch, standoff height) for PCB pad design.

5.2 Pin Configuration and Polarity

For ELD3H7 (8-pin):

• Pins 1, 3: Anodes for Channel 1 and Channel 2 LEDs, respectively.
• Pini 2, 4: Ni cathode za LED za Channel 1 na Channel 2 kwa mtiririko huo.
• Pini 5, 7: Ni emitter za phototransistor za Channel 1 na Channel 2 kwa mtiririko huo.
• Pini 6, 8: Ni collector za phototransistor za Channel 1 na Channel 2 kwa mtiririko huo.

Kwa ELQ3H7 (pini 16):

• Pini 1, 3, 5, 7: Anodi za LED za kituo 1 hadi 4.
• Pini 2, 4, 6, 8: Kathodi ya LED za Kituo 1 hadi 4.
• Pini 9, 11, 13, 15: Emita ya Transista ya Mwanga ya Kituo 1 hadi 4.
• Pini 10, 12, 14, 16: Kolekta ya Transista ya Mwanga ya Kituo 1 hadi 4.

5.3 Recommended PCB Land Pattern

Karatasi ya Data ina muundo ulipendekezwa wa picha ya pad kwa ufungaji wa SSOP wenye pini 8 na 16. Kufuata mapendekezo haya kuhakikisha muundo thabiti wa mnyororo wakati wa upakiaji tena na utulivu unaofaa wa mitambo.

5.4 Device Marking

The device is marked on the top side. The marking includes:

• "EL": Manufacturer identifier.
• "D3H7" or "Q3H7": Model numbers for 2-channel or 4-channel devices.
• "Y": A single-digit year code.
• "WW": A two-digit week code.
• "V": Alama ya hiari, inayoashiria uthibitisho wa VDE.

6. Soldering and Assembly Guide

Vifaa hivi vinatumika kwa usakinishaji wa kusakinishwa kwenye uso kwa kutumia mbinu ya kuunganisha kwa kuyeyusha tena.

• Kuunganisha kwa kuyeyusha tena:Joto la juu linaruhusiwa la kuunganisha kwenye kiwiko cha kifurushi ni 260°C, kwa muda usiozidi sekunde 10. Mkunjo wa kawaida wa kuunganisha kwa kuyeyusha tena bila risasi (IPC/JEDEC J-STD-020) unatumika.
• Operation:Standard ESD (Electrostatic Discharge) precautions should be followed as the device contains static-sensitive semiconductors.
• Cleaning:Fuata taratibu za kawaida za usafishaji wa PCB zinazolingana na misombo ya kijani ya epoksi ya umbo.
• Uhifadhi:Hifadhi katika mazingira yaliyokauka yenye halijoto kati ya -55°C hadi +125°C. Shauri litumike ndani ya miezi 12 baada ya tarehe ya msimbo kwa ununuzi bora.

7. Ufungaji na Taarifa za Kuagiza

7.1 Kanuni za Uteuzi wa Majina ya Aina

The part number follows the format:EL[D3H7/Q3H7](Z)-V

• EL:Series prefix.
• D3H7 / Q3H7:Indicates a 2-channel or 4-channel device.
• (Z):Tape and reel packaging option. "TA" indicates tape and reel packaging; absence of this marking indicates tube packaging.
• V:Optional suffix, indicating VDE certification.

7.2 Vipimo vya Ufungaji

• ELD3H7 (Tube):80 pieces per tube.
• ELD3H7 (Tape and Reel):1000 per reel.
• ELQ3H7 (Tube):40 per tube.
• ELQ3H7 (Tape & Reel):1000 per reel.

Tape and reel specifications, including carrier tape width, pocket size, and reel diameter, are detailed to facilitate automatic placement machine setup.

8. Uzingatiaji wa Ubunifu wa Matumizi

8.1 Saketi ya Kawaida ya Matumizi

The most common application is digital signal isolation. A current-limiting resistor must be connected in series with the LED anode to set the required forward current (I_F). Its resistance is calculated by the formula: R_limit= (V_{CC_input}- V_F) / I_F. On the output side, a pull-up resistor (R_L) is connected between the collector and the output side power supply voltage (V_{CC_output}) kati, hutumika kufafanua viwango vya mantiki ya pato na kupunguza mkondo wa kolekta ya fototransista.

8.2 Design Essentials and Best Practices

• Uchaguzi wa Uwiano wa Uhamishaji wa Mkondo:Chagua kiwango cha uwiano wa uhamishaji wa umeme kulingana na umeme unaoendesha na umeme unaohitajika kutoka. Uwiano wa juu wa uhamishaji wa umeme huruhusu kutumia I ya chini kwa pato sawa._F, hivyo kupunguza matumizi ya nguvu ya pembejeo.
• Usawa kati ya kasi na umeme:Kasi ya kubadili (t_r, t_f) kawaida huongezeka kwa kuongezeka kwa I_Fna kupungua kwa R_L, lakini hii itaongeza matumizi ya nguvu. Mzunguko wa majaribio (I_Fmsukumo, V_CE=2V, I_C=2mA, R_L=100Ω) inatoa marejeleo ya utendaji unaotarajiwa.
• Ukinzani wa kelele:High isolation resistance (R_IO) and low isolation capacitance (C_IO) are key to suppressing common-mode noise. Ensure proper PCB layout to avoid creepage and clearance issues that could affect the rated isolation voltage.
• Thermal considerations:Haipaswi kuzidi matumizi ya jumla ya nguvu ya kifaa (P_TOT= 200 mW). Matumizi ya jumla ya nguvu ni matumizi ya nguvu ya LED ya kuingiza (I_F*V_F) pamoja na matumizi ya nguvu ya transistor ya kutolea (I_C*V_CE) sum.

9. Technical Comparison and Differentiation

Compared to standard DIP-4 or DIP-6 optocouplers, the ELD3H7/ELQ3H7 series offers significant advantages:

• Kupunguza ukubwa:Kwa vifaa vya njia 2, kifurushi cha SSOP kinachukua eneo la bodi ya mzunguko chini ya 25% ya kifurushi cha kawaida cha DIP-8, na kufikia ukubwa mdogo.
• Ujumuishaji wa njia nyingi:Inapendekeza chaguzi za njia 2 na njia 4 kwenye kifurushi kimoja, hupunguza idadi ya vipengele na nafasi inayochukuliwa na bodi ya mzunguko katika matumizi mengi ya kutengwa.
• Urefu wa Umbo:Urefu wa milimita 2.0 ni muhimu kwa muundo ulio nyembamba sana.
• Utendaji:Licha ya ukubwa mdogo, bado inaweza kudumisha voltage ya kutengwa ya juu na uwango mpana wa uwiano wa uhamishaji wa mkondo, ambayo ni tofauti muhimu ikilinganishwa na njia mbadala nyingi za kufanya vidogo.

10. Maswali Yanayoulizwa Mara kwa Mara

10.1 Kasi ya juu ya data inayoweza kutekelezwa na vifungu hivi vya mwanga ni nini?

Kulingana na nyakati za kawaida za kupanda/kushuka za 5 µs na 3 µs, kwa ishara safi ya dijiti, kiwango cha juu cha vitendo cha data ni takriban 1/(t_r+t_f) ≈ 125 kHz. Kwa uendeshaji thabiti, lengo la muundo la kihafidhina la 50-100 kHz linapendekezwa.

10.2 How do I select the correct Current Transfer Ratio grade for my application?

If your design requires a guaranteed minimum output current (I_C) at a specific input current (I_F), calculate the required minimum current transfer ratio: CTR_{min_req}= (I_C/ I_F) * 100%. Chagua kifaa ambacho uwiano wa chini wa uhakika wa uhamishaji wa mkondo (kwa mfano 50%) unafikia au kuzidi thamani hii. Kutumia kiwango cha juu cha uwiano wa uhamishaji wa mkondo kunatoa ukingo mkubwa wa muundo.

10.3 Can these devices be used to isolate analog signals?

Although primarily designed for digital isolation, they can also be used for low-frequency, low-precision analog applications (e.g., feedback in isolated power supplies). However, the current transfer ratio has a strong temperature dependence and a nonlinear relationship with I_F, making them unsuitable for precision analog signal transmission without extensive calibration or compensation circuitry. Dedicated linear optocouplers are more suitable for analog isolation.

10.4 What is the purpose of the isolation voltage rating, and how is it tested?

3750 V_rmsThe rating (for 1 minute) is a safety specification indicating the dielectric strength of the insulation between the input and output sides. During testing, all pins on the LED side are shorted together, and all pins on the transistor side are also shorted together. A high AC voltage is applied between these two groups. This rating ensures protection against high-voltage transients that may occur in industrial or mains-connected equipment.

11. Practical Design Example

Scene:Isolate the 3.3V digital signal of the microcontroller to a 5V system.

• Input side: V_{CC_input}= 3.3V. Target I_F= 5 mA, to achieve good speed and current transfer ratio. Assuming V_F≈ 1.2V, then R_limit= (3.3V - 1.2V) / 0.005A = 420Ω. Tumia upinzani wa kawaida wa 430Ω.
• Upande wa pato: V_{CC_output}= 5V. Chagua R_LKwa kuzuia I_Cna kuweka viwango vya mantiki. Kwa I_F=5mA wakati uwiano wa uhamishaji wa sasa ni 100%, I_C≈ 5mA. Wakati transistor inawasha (kujaa), V_CE≈ 0.1V, kwa hivyo pato ni la chini (takriban 0.1V). Wakati imezimwa, pato linainuliwa hadi kiwango cha juu cha 5V. Wakati inawasha, R_LThe power consumption on it is (5V - 0.1V) * 5mA ≈ 24.5 mW, which is completely within the rated range. A standard 1 kΩ resistor will give I_C≈ (5V - 0.1V)/1kΩ = 4.9mA, which is also acceptable.
• Layout:Place the device close to the isolation barrier on the PCB. Maintain the recommended creepage and clearance distances (refer to safety standards such as IEC 60950-1) between the input and output copper traces, especially for high isolation voltage ratings.

12. Working Principle

Optocoupler hufanya kazi kwa kubadilisha ishara ya umeme kuwa mwanga, kuipitisha kwenye pengo la kutengeneza umeme, na kisha kubadilisha mwanga huo tena kuwa ishara ya umeme. Katika ELD3H7/ELQ3H7:

1. Mkondo (I_F) unapita kwenye LED ya infrared, na kuisababisha kutolea fotoni.
2. Photoni hizi hupita kwenye kati ya insulator ya uwazi (mchanganyiko wa umbo), na kugonga eneo la msingi la transistor ya fotoni ya silikoni.
3. Nishati ya fotoni huzalisha jozi za elektroni-na-shimo katika eneo la msingi, kwa ufanisi kuzalisha mkondo wa msingi, na kuifanya transistor iweze kufanya kazi.
4. Transistor inaongoza mkondo wa kolekta (I_C), ambayo ni sawia na ukubwa wa mwanga uliopokelewa, na hivyo pia na pembejeo I_Fni sawia. Uwiano wa mara kwa mara ni uwiano wa uhamishaji wa mkondo.

Ufunguo ni kwamba muunganisho pekee kati ya pembejeo na pato ni wa kioo, na hivyo hutoa utengano wa umeme.

13. Mienendo na Maendeleo ya Sekta

Mwenendo wa teknolojia ya optocoupler inaendeshwa na mahitaji ya kasi ya juu zaidi, ukubwa mdogo, matumizi ya nguvu ya chini, na ujumuishaji wa kazi zaidi. Ingawa optocoupler za jadi za phototransistor kama ELD3H7/ELQ3H7 zinaonyesha ufanisi wa gharama, uthabiti, na voltage ya juu ya kutengwa, teknolojia mpya zinaendelea kutokea:

• Optocoupler za dijiti za kasi ya juu:Kwa kutumia teknolojia ya CMOS na LED zilizojumuishwa, kufikia viwango vya data vya mamia ya Mbps, vinavyozidi vifaa vya msingi wa phototransistor.
• Ujumuishaji wa kazi ya kutengwa:Vifaa vinavyounganisha kutengwa na kazi kama vile madereva ya lango ya kutengwa, ADC za kutengwa, au vyanzo vya nguvu vilivyotengwa.
• Usalimu na Uthabiti Ulioimarishwa:Mwelekeo endelevu wa maendeleo unalenga kuboresha uimara wa nyenzo za kutengwa, uwezo wa kukabiliana na mawimbi ya ghafla, na kufikia viwango vya juu vya voltage vya uendeshaji ndani ya kifurushi kidogo, ili kukidhi viwango vya kimataifa vya usalimu vinavyokua.

Phototransistor couplers remain a fundamental and widely used solution for cost-sensitive, general-purpose isolation applications where moderate speed and high reliability are crucial.