LTST-C193TBKT-2A Blue LED Datasheet - Dimensions 1.6x0.8x0.35mm - Voltage 2.55-2.95V - Power 76mW - Technical Documentation

1. Product Overview

Waraka huu unatoa maelezo kamili ya kiufundi ya LTST-C193TBKT-2A, ambayo ni kipengele cha LED (Light Emitting Diode) cha aina ya SMD (Surface Mount Device). Kipengele hiki kiko katika kategoria ya vifaa vidogo vya optoelektroniki, vilivyoundwa mahsusi kwa usanikishaji wa kisasa wa elektroniki wenye nafasi mdogo. Kazi yake kuu ni kutoa chanzo cha mwanga cha bluu kinachoweza kutegemewa na chenye ufanisi kwa matumizi ya kiashiria cha hali, taa za nyuma na taa za mapambo.

Upeo wa msingi wa LED hii ni urefu wake mdogo sana wa wasifu na pato la mwangaza wa juu. Urefu wake ni milimita 0.35 tu, na imeainishwa kama LED ya chipi nyembamba sana, na kuiwezesha kutumika katika vifaa vya kutumia vinavyonyonya, vifaa vya kuvalia, na matumizi mengine ambapo nafasi ya wima ni ya thamani sana. Kifaa hiki hutumia chipi ya semiconductor ya InGaN (Indium Gallium Nitride), ambayo ni teknolojia ya kiwango cha tasnia kwa uzalishaji wa LED zenye ufanisi za bluu na kijani. Teknolojia hii ya chipi inajulikana kwa uthabiti na utendaji wake.

Soko lengwa la kipengele hiki ni pana, na kinajumuisha wazalishaji wa vifaa vya otomatiki ya ofisi, vifaa vya mawasiliano, vifaa vya nyumbani, na aina mbalimbali za vifaa vya kutumia. Uwiano wake na vifaa vya kukandamiza otomatiki na mchakato wa kiwango wa IR (infrared) reflow soldering, hufanya iweze kutumika katika mstari wa uzalishaji wa otomatiki wa kiasi kikubwa, na kuhakikisha ubora unaolingana na kupunguza gharama za usanikishaji.

2. In-depth Technical Parameter Analysis

2.1 Absolute Maximum Ratings

Absolute Maximum Ratings define the stress limits that may cause permanent damage to the device. These are not operating conditions. For the LTST-C193TBKT-2A, the key limits are as follows:

• Power Dissipation (Pd):76 mW. This is the maximum power that the LED package can dissipate in the form of heat without affecting its performance or lifespan. Exceeding this limit (typically by driving the LED with excessive current) will lead to an uncontrolled rise in junction temperature.
• DC Forward Current (I_F):20 mA. Hii ndiyo mkondo wa mwendelezo wa mbele unaopendekezwa kwa uendeshaji wa kuaminika kwa muda mrefu. Mkondo wa kawaida wa kufanya kazi wa kupima vigezo vya macho ni mdogo zaidi, yaani 2 mA.
• Kilele cha mkondo wa mbele:100 mA, lakini inatumika tu chini ya hali ya mapigo yenye mzunguko wa kazi 1/10 na upana wa mapigo 0.1 ms. Ukadiriaji huu ni muhimu sana kwa matumizi yanayohitaji mwanga mkali wa muda mfupi.
• Safu ya joto:The device can operate in an ambient temperature range of -20°C to +80°C and can be stored at temperatures from -30°C to +100°C.
• Infrared Soldering Conditions:The package can withstand a peak reflow temperature of up to 260°C for a maximum of 10 seconds, which complies with Pb-free soldering process standards.

2.2 Electrical and Optical Characteristics

These parameters are measured at a standard ambient temperature of 25°C and define the device's performance under normal operating conditions.

• Luminous Intensity (I_V):When the forward current (I_F) is 2 mA, the range is from a minimum of 4.50 millicandelas (mcd) to a maximum of 18.0 mcd. Intensity measurements are performed using a sensor filtered to match the photopic response of the human eye (CIE curve).
• Viewing angle (2θ_1/2):Digrii 130. Mtazamo huu mpana ni sifa ya lenzi uwazi (bila kichocheo cha mtawanyiko), ikimaanisha kuwa miale ya mwanga inasambazwa katika eneo pana, inafaa kwa matumizi yanayohitaji taa ya eneo kubwa badala ya boriti iliyolengwa.
• Upeo wa urefu wa wimbi la utoaji (λ_P):Nanomita 468 (nm). Hii ndio urefu maalum wa wimbi wenye pato la juu zaidi la nguvu ya wigo.
• Urefu wa wimbi kuu (λ_d):Katika I_FKwa sasa ya =2mA, anuwai ni 465.0 nm hadi 480.0 nm. Hii ni urefu wa wimbi moja unaotambuliwa na jicho la binadamu na unaofafanua rangi ya mwanga, unaotokana na chati ya rangi ya CIE.
• Upana wa nusu ya mstari wa wigo (Δλ):25 nm. Hii inawakilisha usafi wa wigo; thamani ndogo inamaanisha mwanga uko karibu zaidi na mwanga wa rangi moja.
• Voltage ya mbele (V_F):Katika I_FThe range is 2.55V to 2.95V at =2mA. This is the voltage drop across the LED when it is conducting current. It is a key parameter for designing the current-limiting circuit.
• Reverse Current (I_R):When a reverse voltage (V_R) of 5V is applied, it is a maximum of 10 microamperes (μA).Important Note:LED hii haikusudiwa kufanya kazi kwa upande wa nyuma; jaribio hili linatumika tu kuonyesha sifa za umwagikaji wa umeme.

3. Bin System Description

Ili kuhakikisha uthabiti katika uzalishaji wa wingi, LED hutengwa kulingana na utendaji. LTST-C193TBKT-2A inatumia mfumo wa kugawanya wa pande tatu.

3.1 Forward Voltage Binning

Kipimo ni volti (V), na mkondo wa majaribio ni 2 mA. Kutengeneza makundi kunahakikisha LED katika mzunguko zina kushuka kwa voltage sawa, na hivyo kuleta mwangaza sawa zinapounganishwa sambamba.

• Gear A: 2.55V (min) to 2.65V (max)
• Gear 1: 2.65V to 2.75V
• Gear 2: 2.75V to 2.85V
• Gear 3: 2.85V to 2.95V

Tolerance within each gear is ±0.1V.

3.2 Luminous Intensity Binning

The unit is millicandela (mcd), measured at I_F=2mA. This allows for the selection of LEDs for applications requiring specific brightness levels.

• Grade J: 4.50 mcd to 7.10 mcd
• Gear K: 7.10 mcd to 11.20 mcd
• Gear L: 11.20 mcd to 18.0 mcd

Toleransi ndani ya kila kiwango ni ±15%.

3.3 Sorting by Dominant Wavelength

Kitengo ni nanometer (nm), katika I_FImepimwa chini ya =2mA. Hii inadhibiti uhalisi wa rangi ya bluu.

• Kipimo AC: 465.0 nm hadi 470.0 nm (bluu zaidi, urefu wa mawimbi mfupi)
• Kipimo AD: 470.0 nm hadi 475.0 nm
• AE Band: 475.0 nm to 480.0 nm (slightly greenish, longer wavelength)

The tolerance within each band is ±1 nm.

4. Performance Curve Analysis

Ingawa hati ya maelezo inarejelea michoro maalum (mfano, Mchoro 1 ni usambazaji wa wigo, Mchoro 6 ni pembe ya mtazamo), tabia ya kawaida ya LED za InGaN za aina hii inaweza kuelezewa kama ifuatavyo:

• Mkunjo wa Sasa dhidi ya Voltage (I-V):Voltage ya mbele (V_F) has a positive temperature coefficient; for a given current, it decreases slightly as the junction temperature increases. The curve exhibits an exponential relationship near the turn-on voltage (approximately 2.5V) and becomes more linear at higher currents.
• Luminous intensity vs. current (L-I curve):Within the normal operating range (e.g., up to 20mA), the light output is roughly proportional to the forward current. However, efficiency (lumens per watt) typically peaks at a certain current below the maximum rating and then decreases due to thermal effects and efficiency droop.
• Sifa za Joto:Kwa kawaida, ukali wa mwanga wa InGaN LED ya bluu hupungua kadri joto la makutano linavyoongezeka. Urefu wa wimbi kuu pia hubadilika kidogo kadri joto linavyoongezeka (kwa kawaida huelekea urefu wa wimbi mrefu zaidi).
• Usambazaji wa Wigo:Wigo ni safu ya Gaussian iliyozingatia urefu wa wimbi wa kilele cha 468 nm, na upana wa nusu ya 25 nm.

5. Taarifa za Mitambo na Ufungashaji

5.1 Package Size

LED hii inakidhi vipimo vya kifurushi vya kawaida vya EIA. Vipimo muhimu (kwa milimita) ni pamoja na urefu wa 1.6mm, upana wa 0.8mm na urefu wa kipekee wa nyembamba sana wa 0.35mm. Michoro ya kiufundi inabainisha eneo la pedi, muonekano wa kipengele na uvumilivu (kawaida ±0.10mm).

5.2 Polarity Identification

Cathode kwa kawaida huwa na alama, kama vile mchoro, alama ya kijani kwenye mkanda au kona iliyopigwa kwenye kifaa yenyewe. Lazima kuzingatia upeo sahihi wakati wa kukusanyisha ili kuzuia uharibifu kutokana na voltage ya nyuma.

5.3 Recommended Pad Design

Pad geometry recommendations are provided to ensure reliable solder joint formation and proper alignment during reflow soldering. The recommended maximum stencil thickness for solder paste is 0.10mm to prevent bridging between closely spaced pads.

6. Soldering and Assembly Guide

6.1 Mkunjo wa Joto wa Reflow Soldering

Inatoa mkunjo wa joto wa reflow soldering wa infrared (IR) unaopendekezwa kwa mchakato usio na risasi, unaolingana na viwango vya JEDEC. Vigezo muhimu vinajumuisha:

• Upashaji joto kabla:150°C hadi 200°C.
• Muda wa upashaji joto kabla:Kwa upeo wa sekunde 120, ili kuwezesha kazi ya flux na kupunguza mshtuko wa joto.
• Kiwango cha juu cha joto:Kwa upeo wa 260°C.
• Muda wa juu ya mstari wa kioevu:Mfano wa mkunjo kwenye ukurasa wa 3 unaonyesha muda muhimu wakati solder iko katika hali ya kuyeyuka, ambayo lazima idhibitiwe ili kuhakikisha muundo sahihi wa mwamba.
• Jumla ya muda wa kulehemu kwenye kiwango cha juu cha joto:Muda wa kiwango cha juu ni sekunde 10. Mchakato huu usirudiwe zaidi ya mara mbili.

Kwa sababu muundo wa bodi ya mzunguko, mchanga wa kuuzingia na sifa za tanuri ya reflow ni tofauti, mkunjo huu ni lengo la jumla na lazima uthibitishwe kwa usanidi maalum wa uzalishaji.

6.2 Manual Welding

Ikiwa unahitaji kuchomea kwa mkono, tumia chuma cha kuchomea chenye joto lisiozidi 300°C, na kikomo cha muda wa mguso kwa operesho moja ni sekunde 3 kwa upeo. Joto la kupita kiasi linaweza kuharibu kifurushi cha plastiki na chip ya semiconductor.

6.3 Cleaning

Usitumie vimumunyisho vya kemikali visivyobainishwa. Ikiwa unahitaji kusafisha baada ya kuchomea, weka LED kwenye ethanol au isopropanol kwa joto la kawaida kwa muda usiozidi dakika moja. Vimumunyisho vikali vinaweza kuharibu lenzi ya epoxy na kifurushi.

6.4 Uhifadhi na Uendeshaji

• Tahadhari za ESD:LED zinaweza kuharibika kwa kutokana na umeme wa tuli (ESD). Tafadhali tumia mkanda wa kuzuia umeme wa tuli, mkeka wa kuzuia umeme wa tuli na vifaa vilivyowekwa ardhini ipasavyo wakati wa kufanya kazi.
• Uwezo wa kuvumilia unyevu:Ndani ya mfuko wa asili ulio na dawa ya kukaushia na kuzuia unyevu, kipindi cha maisha cha kifaa ni mwaka mmoja wakati hali ya joto ya uhifadhi ≤30°C na unyevunyevu wa jamaa ≤90%. Mara tu mfuko unapofunguliwa, LED zinapaswa kuhifadhiwa katika mazingira yenye ≤30°C na unyevunyevu wa jamaa ≤60%.
• Maisha ya kiwandani:Components exposed to ambient air should undergo infrared reflow soldering within 672 hours (28 days). For longer exposure, they should be stored in a sealed container with desiccant or in a nitrogen dryer. If exposure exceeds 672 hours, baking at approximately 60°C for at least 20 hours before soldering is recommended to remove absorbed moisture and prevent the "popcorn" phenomenon during reflow.

7. Ufungaji na Taarifa za Kuagiza

7.1 Vipimo vya Ukanda na Reel

LEDs are supplied in industry-standard embossed carrier tape and sealed with cover tape.

• Reel dimensions:Kipenyo cha inchi 7.
• Idadi kwa kila rolli:Vipande 5000.
• Idadi ya chini ya ufungashaji:Remaining quantity starts from 500 pieces.
• Missing Parts:A maximum of two consecutive empty positions are allowed in the reel.
• Standard:The packaging complies with ANSI/EIA-481-1-A-1994 specification.

8. Mapendekezo ya Utumiaji

8.1 Mandhari ya Kawaida ya Utumiaji

• Onyesho la Hali:Viashiria vya kuwasha umeme, kuchaji betri, shughuli za mtandao na hali katika simu mahiri, kompyuta kibao, kompyuta ya mkononi na vifaa vya IoT.
• Backlighting:For membrane switches, small LCD displays, or decorative panels in consumer electronics and appliances.
• Decorative Lighting:Mwangaza wa Mazingira katika Mapambo ya Ndani ya Magari, Vifaa vya Mchezo, na Vifaa vya Umeme vya Nyumbani.

8.2 Design Considerations

• Kizuizi cha Mto:Hakikisha unatumia upinzani wa mfululizo au kichocheo cha mkondo wa mara kwa mara ili kuzuia mkondo wa mbele kwa kiwango kinachohitajika (mfano, mwangaza wa kawaida ni 2mA, na upeo wa mwangaza ni 20mA). Usiunganishe moja kwa moja kwenye chanzo cha voltage.
• Usimamizi wa joto:Ingawa matumizi ya nguvu ni ya chini, ikiwa unafanya kazi katika hali ya joto ya juu ya mazingira au karibu na mkondo wa juu zaidi, hakikisha eneo la kutosha la shaba la PCB au mashimo ya upanuzi wa joto chini ya pedi, ili kusaidia kupunguza joto na kudumisha uhai wa LED na uthabiti wa rangi.
• Ubunifu wa macho:Transparent lenses produce a Lambertian emission pattern (wide viewing angle). If a more focused beam is required, external secondary optics (lenses or light guides) are necessary.
• Application Scope:This component is suitable for standard commercial and industrial applications. For applications requiring extremely high reliability where failure could compromise safety (e.g., aviation, medical life support), the component manufacturer must be consulted for suitability assessment.

9. Technical Comparison and Differentiation

The primary differentiating factor of the LTST-C193TBKT-2A is its0.35mm heightIkilinganisha na LED za kawaida za 0603 au 0402 zenye urefu wa 0.6-0.8mm, urefu wake wa sehemu ya juu umepungua kwa asilimia 40-50. Hii ni faida muhimu katika mwelekeo endelevu wa kupunguza ukubwa wa vifaa, hasa kwa simu janja, kompyuta nyembamba sana na teknolojia za kuvae ambapo nafasi ya ndani ni ndogo sana.

Zaidi ya hayo, mchanganyiko wa umbo lake nyembamba sana na nguvu ya mwanga inayolinganishwa (hadi 18.0 mcd kwa 2mA tu) ni muhimu. LED nyingine zenye unene sawa zinaweza kupunguza mwangaza. Matumizi ya chip ya InGaN iliyothibitishwa yanahakikisha usawa mzuri wa rangi na uaminifu ndani ya safu zake maalum.

10. Maswali Yanayoulizwa Mara kwa Mara (Kulingana na Vigezo vya Kiufundi)

10.1 What value of resistor should be selected when using a 5V power supply?

Tumia sheria ya Ohm (R = (V_{Chanzo cha umeme}- V_F) / I_F), and assuming a typical V_Fis 2.8V, the required I_Fis 10mA: R = (5V - 2.8V) / 0.010A = 220 ohms. For a conservative design to ensure the current does not exceed the limit, the maximum V from the datasheet should be used._F(2.95V) Calculation: R_{Minimum value}= (5V - 2.95V) / 0.010A = 205 ohms (use standard values of 220Ω or 240Ω).

10.2 Can I operate this LED continuously at its maximum current of 20mA?

Ndiyo, lakini kuna mambo muhimu ya kuzingatia. Kwa 20mA, matumizi ya nguvu ni takriban 2.8V * 0.020A = 56mW, chini ya kiwango cha juu kabisa cha 76mW. Hata hivyo, kufanya kazi kwenye viwango vya juu kabisa vya kipimo hutoa joto zaidi, ambalo linaweza kufupisha maisha ya LED, na kusababisha mabadiliko madogo ya rangi na kupungua kwa ufanisi wa mwanga baada ya muda. Kwa maisha bora na uthabiti, ikiwa mwangaza unatosha, inashauriwa kufanya kazi kwa sasa ya chini (kwa mfano 5-10mA).

10.3 Why is the viewing angle so wide (130°)?

Lens epoksi ya uwazi (isiyoenea) imeumbwa kwa umbo la nusu tufe inayofunika chip ndogo ya LED. Umbo hili linafanya kazi kama lenzi, linaitikisa miale ya mwanga kutoka kwenye chanzo kidogo cha mwanga na kueneza kwa pembe pana sana. Hii inafaa kwa matumizi ambayo yanahitaji LED ionekane kutoka maeneo mengi tofauti ya mtazamo, sio tu mbele moja kwa moja.

10.4 What is the difference between peak wavelength and dominant wavelength?

Urefu wa wimbi la kilele (λ_P):Wavelength ya kipeo ambayo LED hutoa nguvu kubwa zaidi ya mwanga. Ni sifa ya nyenzo za semiconductor.Urefu wa wimbi kuu (λ_d):Wavelength inayohisiwa. Ni wavelength ya mwanga wa monokromati ambao mwangalizi wa kawaida wa binadamu huona kuwa na rangi sawa na mwanga wa LED. Thamani hizi mbili ni tofauti kwa sababu ya umbo la pembe ya usikivu wa jicho la binadamu na upana wa wigo wa LED. Wavelength kuu inahusiana zaidi na vipimo vya rangi katika usanifu.

11. Practical Design and Use Cases

Mandhari: Kusanifu mstari wa viashiria vya hali vya LED nyingi kwa spika ya bluetooth ya kubebeka.The design requires 5 blue LEDs to indicate battery level. Space behind the thin plastic diffuser panel is extremely limited.

Component Selection:The LTST-C193TBKT-2A was selected for its 0.35mm height, allowing it to be mounted within the slim housing. Its 130° wide viewing angle ensures the indicator strip is visible from various angles.

Circuit Design:The LED will be driven by the 3.3V regulator on the motherboard. The target brightness is the middle value of the K grade (approximately 9 mcd), and a forward current of 5mA is selected for good visibility and power efficiency. For conservative design, the maximum V_F2.95V is used for calculation: R = (3.3V - 2.95V) / 0.005A = 70 ohms. A standard 68Ω resistor is selected, resulting in a slightly higher current of approximately 5.1mA.

PCB Layout:Use the pad layout recommended in the specification. Connect a small amount of copper to the cathode pad (typically thermally connected to the LED substrate) to aid heat dissipation, especially since the five LEDs will be closely spaced.

Assembly:Use automated equipment to place LEDs from 8mm tape. The assembly line uses a proven, lead-free reflow temperature profile compliant with JEDEC recommendations in the specification, with careful monitoring of peak temperature and time above liquidus to prevent thermal damage to the ultra-thin package.

12. Introduction to Technical Principles

LTST-C193TBKT-2A is based on an InGaN (Indium Gallium Nitride) semiconductor chip. The light emission principle is electroluminescence. When a forward voltage is applied across the semiconductor p-n junction, electrons from the n-type region and holes from the p-type region are injected into the active region. There, they recombine, releasing energy in the form of photons (light). The specific wavelength (color) of the emitted light is determined by the bandgap energy of the semiconductor material. By adjusting the ratio of indium to gallium in the InGaN compound, the bandgap can be tuned to produce light in the blue, green, and near-ultraviolet spectral ranges. The chip is then encapsulated in transparent epoxy resin, forming a lens that protects the delicate semiconductor structure from mechanical and environmental damage and helps extract light efficiently from the chip.

13. Industry Trends and Development

Maendeleo ya LED kama LTST-C193TBKT-2A yanachochewa na mwenendo kadhaa muhimu katika sekta ya elektroniki:

• Kupunguzwa kwa Ukubwa:Uendelevu wa kutafuta vifaa vya matumizi nyembamba na vidogo zaidi unahitaji vipengele vyenye eneo la kukaa na urefu unaopungua. Urefu wa sehemu ya 0.35mm unawakilisha kiwango cha kumbukumbu cha LED za chip katika matumizi mengi ya sasa.
• Uboreshaji wa ufanisi:Uboreshaji endelevu wa ukuaji wa InGaN epitaxial na muundo wa chip unaendelea kuongeza ufanisi wa mwanga wa LED ya bluu (lumeni kwa kila watt), kuruhusu pato lenye mwangaza zaidi kwa sasa ya chini, na hivyo kupunguza matumizi ya nguvu na joto.
• Ufungashaji wa hali ya juu:Packaging technology is crucial for ultra-thin devices. The development of mold compounds, die attach materials, and Wafer Level Packaging (WLP) technology has made micro-components more robust and reliable.
• Automation and Standardization:Compatibility with tape-and-reel packaging, automated placement, and standard reflow profiles is essential for integration into the global automated manufacturing ecosystem, thereby maintaining low assembly costs and high quality.

Maendeleo ya baadaye yanaweza kujumuisha ufungaji nyembamba zaidi, ujumuishaji wa saketi ya kuendesha ndani ya ufungaji wa LED (LED zenye akili), na uboreshaji zaidi katika uthabiti wa rangi na utendaji wa joto.