SMD LED LTSA-E67RVEWTU Datasheet - Diffused Red AlInGaP - 70mA - 185.5mW - English Technical Document

1. Product Overview

This document provides the complete technical specifications for a surface-mount device (SMD) Light Emitting Diode (LED). The component is designed for automated printed circuit board (PCB) assembly and is suitable for space-constrained applications. Its primary characteristics include a diffused lens and a red light source based on Aluminum Indium Gallium Phosphide (AlInGaP) semiconductor technology.

1.1 Core Features and Target Market

The LED is engineered with several key features that enhance its reliability and ease of integration. It is compliant with the Restriction of Hazardous Substances (RoHS) directive. The component is supplied in industry-standard packaging: on 8mm tape wound onto 7-inch diameter reels, facilitating high-speed automated pick-and-place assembly. It has undergone preconditioning to JEDEC Moisture Sensitivity Level 2a, ensuring robustness against moisture-induced damage during reflow soldering. Furthermore, the product is qualified according to the AEC-Q101 Rev. D standard, a critical benchmark for components used in automotive electronics. Its design is compatible with infrared (IR) reflow soldering processes. The primary target application is automotive accessory systems, where reliability and performance under varying environmental conditions are paramount.

2. Technical Parameters: In-Depth Objective Interpretation

Sehemu hii inaelezea kwa kina mipaka kamili na sifa za uendeshaji za LED. Kuelewa vigezo hivi ni muhimu kwa usanidi wa mzunguko unaoaminika na kuhakikisha sehemu hiyo inafanya kazi ndani ya eneo lake salama la uendeshaji (SOA).

2.1 Absolute Maximum Ratings

The absolute maximum ratings define the stress limits beyond which permanent damage to the device may occur. These ratings are specified at an ambient temperature (Ta) of 25°C. The maximum continuous DC forward current (IF) is 70 mA. Under pulsed conditions with a 1/10 duty cycle and a 0.1ms pulse width, the device can handle a peak forward current of 100 mA. The maximum power dissipation (Pd) is 185.5 mW. The device is rated for an operating and storage temperature range of -40°C to +100°C. For lead-free soldering processes, it can withstand an infrared reflow profile with a peak temperature of 260°C for a maximum of 10 seconds.

2.2 Thermal Characteristics

Gudanar da zafi yana da mahimmanci ga aikin LED da tsawon rayuwa. Juriyar zafi daga haɗin semiconductor zuwa iskar yanayi (RθJA) yawanci 280 °C/W ne, ana auna shi akan daidaitaccen PCB na FR4 tare da kauri na 1.6mm da yanki na tagulla na 16mm². Juriyar zafi daga haɗin zuwa wurin solder (RθJS) yawanci 130 °C/W ne, yana ba da hanya madaidaiciya don hura zafi. Matsakaicin yanayin zafi na haɗin da aka yarda (Tj) shine 125°C. Wuce wannan zafin zai hanzarta raguwar lumen kuma zai iya haifar da gazawa mai tsanani.

2.3 Electro-Optical Characteristics

Ana halayyakar na lantarki-optical ana auna su a Ta=25°C da kuma gwajin kwarara (IF) na 50 mA, wanda shine madaidaicin wurin aiki da ya zama gama-gari a ƙarƙashin iyakar iyaka. Ƙarfin haske (Iv) ya bambanta daga mafi ƙanƙanta na 1800 millicandelas (mcd) zuwa mafi girma na 3550 mcd. Kusurwar kallo (2θ½), wadda aka ayyana a matsayin cikakkiyar kusurwar da ƙarfin haske ya ragu zuwa rabin ƙimar sa na axial, shine digiri 120, yana nuna faɗaɗa, yaduwar tsarin fitarwa. Tsayin tsayin fitarwa mafi girma (λP) shine 632 nm. Tsayin tsayin rinjaye (λd), wanda ke ayyana launin da ake gani, yana da ƙayyadadden kewayon daga 618 nm zuwa 630 nm. Faɗin bandwidth na bakan (Δλ) ya kusan 20 nm. Ƙarfin lantarki na gaba (VF) a 50 mA ya bambanta daga 1.9V zuwa 2.65V. Kwararar baya (IR) an iyakance shi zuwa matsakaicin 10 μA lokacin da aka yi amfani da ƙarfin lantarki na baya (VR) na 12V; yana da mahimmanci a lura cewa ba a ƙera na'urar don aiki a cikin karkatar da baya ba.

3. Bin Ranking System Explanation

To ensure consistency in color and brightness for production applications, LEDs are sorted into performance bins. The batch is labeled with a code representing its forward voltage (Vf), luminous intensity (Iv), and dominant wavelength (Wd) ranks.

3.1 Forward Voltage (Vf) Binning

Forward voltage is binned in steps of approximately 0.15V. Bin codes range from C (1.90V - 2.05V) to G (2.50V - 2.65V). A tolerance of ±0.1V is applied to each bin. Selecting LEDs from the same Vf bin helps maintain uniform current distribution when multiple devices are connected in parallel.

3.2 Luminous Intensity (Iv) Binning

Luminous intensity is categorized into three bins: X1 (1800-2240 mcd), X2 (2240-2800 mcd), and Y1 (2800-3550 mcd). A tolerance of ±11% applies to each bin. This allows designers to select the appropriate brightness level for their application.

3.3 Dominant Wavelength (Wd) Binning

Dominant wavelength, wanda ke ƙayyade ainihin inuwar ja, ana rarrabe shi cikin matakai na 3nm. Lambobin kwandon su ne 5 (618-621 nm), 6 (621-624 nm), 7 (624-627 nm), da 8 (627-630 nm). Ƙarfin jurewa ga kowane kwandon shine ±1 nm. Wannan tsauraran sarrafawa yana da mahimmanci ga aikace-aikacen da ke buƙatar takamaiman ma'anoni na launi.

4. Performance Curve Analysis

Graphical data provides insight into how the LED behaves under varying conditions, which is critical for robust system design.

4.1 Current vs. Voltage (I-V) Characteristic

The forward voltage exhibits a logarithmic relationship with forward current. At low currents, the voltage is close to the diode's built-in potential. As current increases, the voltage rises due to the series resistance of the semiconductor material and contacts. Designers must use this curve to select appropriate current-limiting resistors or driver circuits to ensure the LED operates at the desired brightness without exceeding its maximum ratings.

4.2 Luminous Intensity vs. Forward Current

The luminous intensity is generally proportional to the forward current in the normal operating range. However, efficiency may drop at very high currents due to increased heat generation and other non-radiative recombination processes. Operating the LED significantly above its recommended current will reduce its lifespan.

4.3 Temperature Dependence

The performance of an LED is highly temperature-dependent. As the junction temperature increases, the forward voltage typically decreases slightly for a given current. More significantly, the luminous output decreases. The dominant wavelength may also shift slightly with temperature. Effective heat sinking is therefore essential to maintain consistent optical performance, especially in high-power or high-ambient-temperature applications like automotive environments.

5. Mechanical and Packaging Information

5.1 Physical Dimensions and Polarity Identification

The LED conforms to a standard EIA package outline. All critical dimensions are provided in millimeters, with a general tolerance of ±0.2 mm unless otherwise specified. A key design note is that the anode lead frame also serves as the primary heat sink for the LED. Proper identification of the anode and cathode is crucial during PCB layout and assembly to ensure correct polarity connection.

5.2 Recommended PCB Pad Layout

An bayar da shawararriyar tsarin ƙasa (sawun ƙafa) don PCB don tabbatar da ingantaccen haɗaƙƙiyar gyaɗa da mafi kyawun aikin zafi. An ƙera wannan tsarin don dacewa da hanyoyin haɗaƙƙiyar gyaɗa ta infrared reflow. Bin wannan shawararriyar tsarin yana taimakawa wajen samun daidaitattun filaye na gyaɗa, yana tabbatar da kwanciyar hankali na injiniya, da kuma haɓaka mafi girman canja wurin zafi daga kafafen zafi na LED (anode) zuwa PCB.

6. Soldering and Assembly Guidelines

6.1 Reflow Soldering Profile

A detailed infrared reflow soldering profile is specified for lead-free processes, in accordance with the J-STD-020 standard. The profile includes pre-heat, thermal soak, reflow, and cooling stages. The critical parameter is a peak package body temperature not exceeding 260°C, sustained for a maximum of 10 seconds. Following this profile is essential to prevent thermal damage to the LED's epoxy lens and internal semiconductor structure.

6.2 Storage and Handling Precautions

The product is classified as Moisture Sensitivity Level (MSL) 2a per JEDEC J-STD-020. While in its original, sealed moisture-barrier bag with desiccant, it should be stored at ≤30°C and ≤70% RH and used within one year. Once the bag is opened, the components should be stored at ≤30°C and ≤60% RH. It is recommended to complete the IR reflow process within 4 weeks of opening the bag. For storage beyond 4 weeks outside the original packaging, components should be stored in a sealed container with desiccant or baked at approximately 60°C for at least 48 hours prior to soldering to remove absorbed moisture and prevent "popcorning" during reflow.

6.3 Cleaning

If cleaning after soldering is necessary, only specified solvents should be used. Immersing the LED in ethyl alcohol or isopropyl alcohol at room temperature for less than one minute is acceptable. The use of unspecified or aggressive chemical cleaners can damage the LED's plastic package and optical lens.

7. Packaging and Ordering Information

7.1 Tape and Reel Specifications

Ana LEDs ana ake a kan embossed carrier tape mai fadin 8mm. Ana nade tape din a kan daidaitaccen reel mai diamita 7-inch (178mm). Kowace reel tana dauke da guda 2000. Ana yi marufi daidai da ƙa'idodin ANSI/EIA-481. Ana bayar da cikakkun ma'auni na aljihun tef, tefin murfi, da reel don tabbatar da dacewa da kayan aikin haɗawa ta atomatik.

8. Application Notes and Design Considerations

8.1 Typical Application Scenarios

The primary intended application is for automotive accessory functions. This can include interior ambient lighting, dashboard indicator lights, center console illumination, or external marker lights where a diffuse, wide-angle red emission is required. Its AEC-Q101 qualification makes it suitable for the harsh environmental conditions (temperature, humidity, vibration) found in vehicles.

8.2 Critical Design Considerations

Current Limiting: LED ni kifaa kinachotumia mkondo. Upinzani wa mfululizo au mzunguko wa kiendeshi cha mkondo thabiti ni lazima ili kuzuia mkondo wa mbele kufikia thamani salama, kwa kawaida kwenye au chini ya safu ya 50-70 mA inayopendekezwa, kwa kuzingatia tofauti za usambazaji wa nguvu.
Usimamizi wa Joto: Kiwango cha juu cha joto cha makutano hakipaswi kuzidi. Unda mpangilio wa PCB ili kutoa njia ya joto inayotosha kutoka kwa pedi ya anode. Kwa matumizi ya mkondo mkubwa au joto la mazingira ya juu, fikiria kutumia eneo kubwa la shaba kwenye PCB au vias za ziada za joto ili kupunguza joto.
Ulinzi wa ESD: While not explicitly stated for this device, AlInGaP LEDs can be sensitive to electrostatic discharge (ESD). Implementing standard ESD handling precautions during assembly is recommended.
Optical Design: The 120° viewing angle and diffused lens provide a soft, wide beam. For applications requiring a more focused beam, secondary optics (e.g., lenses, light guides) would be necessary.

9. Technical Comparison and Differentiation

Wannan AlInGaP-based red LED yana ba da fa'idodi na musamman. Idan aka kwatanta da tsofaffin fasahohi kamar Gallium Arsenide Phosphide (GaAsP), AlInGaP yana samar da ingantaccen haske mai haske, wanda ke haifar da haske mafi girma don wannan shigarwar na yanzu. Ruwan tabarau mai yaduwa yana haifar da tsari mai daidaito, faɗi mai faɗi wanda ya dace da hasken yanki maimakon hasken tabo mai mai da hankali. AEC-Q101 qualification da MSL 2a rating sune manyan bambance-bambance don motoci da sauran aikace-aikace masu wahala, suna nuna ingantaccen gwajin dogaro da juriyar danshi idan aka kwatanta da LED na kasuwanci na yau da kullun.

10. Frequently Asked Questions (Based on Technical Parameters)

Q: Can I drive this LED directly from a 5V or 12V supply?
A: No. You must use a current-limiting mechanism. For a 5V supply, a series resistor is commonly used (R = (Vsupply - Vf) / If). For a 12V supply, a resistor would dissipate excessive heat; a constant-current driver or a switching regulator is recommended.

Q: What is the difference between peak wavelength and dominant wavelength?
A: Tsayin raƙuman kololuwa (λP) shine tsayin raƙuman da rarraba ƙarfin bakan ya fi girma (632 nm). Tsayin raƙuman rinjaye (λd) shine tsayin raƙuman guda ɗaya na hasken monochromatic wanda zai dace da launin da ake gani na LED (618-630 nm). λd ya fi dacewa don ƙayyadaddun launi.

Q: Me ya sa juriyar zafi ta zama muhimmi?
A: Tana ƙididdige yadda zafi zai iya fita daga haɗin LED yadda ya kamata. Ƙaramin juriyar zafi yana nufin mafi kyawun kawar da zafi, wanda zai ba ka damar tuƙi LED a cikin mafi girman igiyoyin ruwa ko a cikin yanayi mai zafi yayin kiyaye zafin haɗin cikin iyakoki masu aminci, don haka tabbatar da dogon lokaci aminci da kwanciyar hankali fitar da haske.

Q: The datasheet mentions a reverse voltage test. Can I use this LED in an AC circuit or with reverse polarity protection?
A: The 12V reverse voltage rating is for test purposes only. The device is not designed for continuous reverse bias operation. In an AC circuit or for polarity protection, an external series diode must be used to block reverse voltage across the LED.

11. Practical Design and Usage Example

Scenario: Designing a red status indicator for an automotive control module. The module operates from the vehicle's 12V battery system (nominal 14V when running). The indicator needs to be clearly visible in daylight.
Design Steps:
1. Current Selection: Choose an operating point of 50 mA for a good balance of brightness and longevity.
2. Driver Selection: Due to the high supply voltage, a simple resistor would waste over 0.5W of power. A better solution is a low-dropout (LDO) constant-current LED driver IC set to 50 mA.
3. Thermal Design: Module din za a iya kasancewa a cikin injin. Yi kiyasin matsakaicin zafin yanayi (misali, 85°C). Lissafta hawan zafin junction da ake tsammani: ΔTj = Pd * RθJA = (VF * IF) * RθJA. Ta amfani da VF=2.2V na yau da kullun da RθJA=280°C/W, Pd=0.11W, don haka ΔTj ≈ 31°C. Tj = Ta + ΔTj = 85°C + 31°C = 116°C, wanda ke ƙasa da matsakaicin 125°C. Wannan yana karɓuwa amma a gefe. Don inganta amincin, ƙara yankin jan ƙarfe akan kushin PCB da aka haɗa zuwa anode don rage tasirin RθJA.
4. Bin Selection: For consistent appearance across multiple units in a dashboard, specify tight bins for dominant wavelength (e.g., Bin 7) and luminous intensity (e.g., Bin X2 or Y1).

12. Operating Principle Introduction

Light Emitting Diodes are semiconductor p-n junction devices. When a forward voltage is applied, electrons from the n-type region and holes from the p-type region are injected across the junction. These charge carriers recombine in the active region of the semiconductor. In a direct bandgap semiconductor like AlInGaP, a significant portion of this recombination event releases energy in the form of photons (light). The specific wavelength (color) of the emitted light is determined by the bandgap energy of the semiconductor material. AlInGaP alloys are engineered to produce light in the red, orange, and yellow parts of the visible spectrum. The diffused lens is made of an epoxy or silicone material that contains scattering particles. These particles randomly redirect the light emitted from the semiconductor chip, broadening the beam angle and creating a more uniform, softer appearance by eliminating the bright central "hot spot" typical of a clear-lens LED.

13. Technology Trends and Developments

The field of LED technology is continuously evolving. For indicator and signaling applications like this component, trends focus on several key areas. Increased Efficiency: Ongoing material science research aims to improve the internal quantum efficiency (IQE) of AlInGaP and other semiconductor materials, yielding higher luminous output per unit of electrical input power (lm/W). Enhanced Reliability: Demands from automotive and industrial markets drive improvements in package materials (e.g., high-temperature silicones) and die-attach technologies to withstand higher junction temperatures and more extreme thermal cycling. Miniaturization: There is a constant push for smaller package footprints while maintaining or increasing optical power, enabling denser integration in modern electronic devices. Color Consistency and Binning: Urekebishaji wa epitaxial na udhibiti wa mchakato wa utengenezaji unaruhusu usambazaji mkali zaidi wa urefu wa mawimbi na nguvu ya mwanga, na hivyo kupunguza hitaji la kugawanya kwa makundi mengi na kurahisisha usimamizi wa hisa kwa wazalishaji. Suluhisho Zilizounganishwa: Mwelekeo unaokua ni kuunganishwa kwa LED die na viendeshaji vya IC, vipengele vya ulinzi (kama vile diodes za ESD), na hata mantiki ya udhibiti katika moduli moja ya mfuko mzima wenye akili.